| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFK36N60P | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 650W Case: TO264 On-state resistance: 0.19Ω Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXFP36N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns |
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IXFT36N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 650W Case: TO268 On-state resistance: 0.19Ω Mounting: SMD Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
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IXGH36N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 45ns Turn-off time: 350ns |
на замовлення 292 шт: термін постачання 21-30 дні (днів) |
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IXGH36N60B3C1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 47ns Turn-off time: 350ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXDD604SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
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IXDD609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
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IXDF602SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
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IXDF604SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Turn-on time: 81ns Turn-off time: 79ns |
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IXDI602SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting Turn-on time: 93ns Turn-off time: 93ns |
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IXDI604SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting Turn-on time: 81ns Turn-off time: 79ns |
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IXDI609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
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IXFA26N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO263 On-state resistance: 0.25Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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IXFH26N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.23Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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IXFH26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXFJ26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 78A Power dissipation: 180W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 0.295Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXFP26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO220AB On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
на замовлення 271 шт: термін постачання 21-30 дні (днів) |
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IXFQ26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO3P On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
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IXTQ26N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 400W Case: TO3P On-state resistance: 0.23Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 300ns |
на замовлення 301 шт: термін постачання 21-30 дні (днів) |
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IXTT26N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 400W Case: TO268 On-state resistance: 0.23Ω Mounting: SMD Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 300ns |
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| MCD132-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Threshold on-voltage: 0.8V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Max. off-state voltage: 1.2kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 130A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 4.75kA |
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| MCD132-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Threshold on-voltage: 0.8V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Max. off-state voltage: 1.4kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 130A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 4.75kA |
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MCD132-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Threshold on-voltage: 0.8V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Max. off-state voltage: 1.6kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 130A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 4.75kA |
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| MCD132-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Threshold on-voltage: 0.8V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Max. off-state voltage: 1.8kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 130A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 4.75kA |
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LCA182 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| LCA182STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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IXTA6N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns Mounting: SMD Case: TO263 Kind of package: tube Kind of channel: depleted Reverse recovery time: 64ns Drain-source voltage: 500V Drain current: 6A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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IXTA1N170DHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 1A Power dissipation: 290W Case: TO263HV On-state resistance: 16Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 30ns |
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IXTA6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: TO263 On-state resistance: 2.2Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 41ns |
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IXTT2N170D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO268; 80ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 2A Power dissipation: 568W Case: TO268 On-state resistance: 6.5Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 80ns |
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MCC44-12io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 49A; TO240AA; Ufmax: 1.75V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 49A Case: TO240AA Max. forward voltage: 1.75V Max. forward impulse current: 1.23kA Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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MCC44-12io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 49A; TO240AA; Ufmax: 1.8V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 49A Case: TO240AA Max. forward voltage: 1.8V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| DLA40IM800PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 40A; D2PAK; Ufmax: 1.26V; Ifsm: 300A Power dissipation: 185W Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Case: D2PAK Max. off-state voltage: 0.8kV Max. forward voltage: 1.26V Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 300A |
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DSI30-08AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Max. off-state voltage: 0.8kV Load current: 30A Max. forward impulse current: 255A Case: D2PAK Kind of package: tube Max. forward voltage: 1.25V Mounting: SMD Semiconductor structure: single diode Power dissipation: 160W Type of diode: rectifying |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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DSI30-12AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: D2PAK Kind of package: tube Max. forward impulse current: 255A Max. forward voltage: 1.25V |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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DSI30-16AS | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 255A Max. forward voltage: 1.25V |
на замовлення 428 шт: термін постачання 21-30 дні (днів) |
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DSI30-16AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: D2PAK Kind of package: tube Max. forward impulse current: 255A Max. forward voltage: 1.25V |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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| MG06100S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: package S |
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| MG06150S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: package S |
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| MG06300D-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw |
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| MG06400D-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 400A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Mechanical mounting: screw |
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| MG0675S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 75A Case: package S Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Mechanical mounting: screw |
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LOC211P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16 Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Type of optocoupler: optocoupler Case: SO16 |
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| LOC211PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A Mounting: SMD Number of channels: 2 Insulation voltage: 3.75kV Trigger current: 1A Type of optocoupler: optocoupler Case: SO16 |
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IXFB82N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™ Drain-source voltage: 600V Drain current: 82A Case: PLUS264™ Polarisation: unipolar On-state resistance: 75mΩ Power dissipation: 1.25kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET |
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IXFH42N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.185Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
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IXFL82N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™ Drain-source voltage: 600V Drain current: 55A Case: ISOPLUS264™ Polarisation: unipolar On-state resistance: 80mΩ Power dissipation: 625W Kind of channel: enhanced Gate charge: 240nC Kind of package: tube Mounting: THT Type of transistor: N-MOSFET |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFN82N60P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 72A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 75mΩ Pulsed drain current: 200A Power dissipation: 1.04kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±40V Mechanical mounting: screw |
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| CPC1972GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6 Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
товар відсутній |
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MCC95-12io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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MCMA50P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: TO240AA Max. off-state voltage: 1.2kV Max. forward voltage: 1.48V Load current: 50A Semiconductor structure: double series Gate current: 78/200mA |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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MCMA50P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.48V Load current: 50A Semiconductor structure: double series Gate current: 78/200mA |
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MDMA50P1200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V Max. forward impulse current: 850A Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: TO240AA Max. off-state voltage: 1.2kV Max. forward voltage: 1.09V Load current: 50A Semiconductor structure: double series |
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MDMA50P1600TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V Max. forward impulse current: 850A Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.09V Load current: 50A Semiconductor structure: double series |
товар відсутній |
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IXFK520N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264 Type of transistor: N-MOSFET Mounting: THT Case: TO264 On-state resistance: 2.2mΩ Kind of package: tube Power dissipation: 1.25kW Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 520A |
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IXFX520N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Mounting: THT Case: PLUS247™ On-state resistance: 2.2mΩ Kind of package: tube Power dissipation: 1.25kW Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 520A |
товар відсутній |
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IXFN50N120SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC Semiconductor structure: single transistor Reverse recovery time: 54ns Drain-source voltage: 1.2kV Drain current: 48A On-state resistance: 50mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Features of semiconductor devices: Kelvin terminal Gate charge: 115nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Case: SOT227B |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXGH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 250A Turn-on time: 55ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Gate charge: 196nC Technology: GenX3™; PT Kind of package: tube Mounting: THT Case: TO247-3 |
товар відсутній |
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IXGK50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Gate charge: 196nC Technology: GenX3™; PT Kind of package: tube Mounting: THT Case: TO264 |
товар відсутній |
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IXYH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 96ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 750W Gate charge: 142nC Technology: GenX3™; Planar; XPT™ Kind of package: tube Mounting: THT Case: TO247-3 |
товар відсутній |
| IXFK36N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 787.27 грн |
| 2+ | 582.94 грн |
| 4+ | 551 грн |
| IXFP36N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
| IXFT36N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXGH36N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
на замовлення 292 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 369.79 грн |
| 3+ | 309.26 грн |
| 4+ | 246.82 грн |
| 10+ | 233.03 грн |
| IXGH36N60B3C1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3127.17 грн |
| IXDD604SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
| IXDD609SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
| IXDF602SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDF604SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
| IXDI602SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDI604SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
| IXDI609SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
| IXFA26N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 359.62 грн |
| 3+ | 295.46 грн |
| 4+ | 267.88 грн |
| 9+ | 252.63 грн |
| 50+ | 246.82 грн |
| IXFH26N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 491.75 грн |
| 3+ | 342.65 грн |
| 7+ | 323.77 грн |
| IXFH26N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 486.28 грн |
| 3+ | 354.26 грн |
| 7+ | 334.66 грн |
| 120+ | 330.31 грн |
| IXFJ26N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 180W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 180W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXFP26N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 271 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 535.53 грн |
| 3+ | 370.96 грн |
| 7+ | 350.63 грн |
| IXFQ26N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTQ26N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 301 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 433.9 грн |
| 3+ | 325.23 грн |
| 8+ | 307.08 грн |
| 30+ | 298.37 грн |
| IXTT26N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
товар відсутній
| MCD132-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.2kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.2kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
товар відсутній
| MCD132-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.4kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.4kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
товар відсутній
| MCD132-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.6kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.6kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
товар відсутній
| MCD132-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.8kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
товар відсутній
| LCA182 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.72 грн |
| 8+ | 114.7 грн |
| 20+ | 108.17 грн |
| LCA182STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| IXTA6N50D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Mounting: SMD
Case: TO263
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
Drain-source voltage: 500V
Drain current: 6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Mounting: SMD
Case: TO263
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
Drain-source voltage: 500V
Drain current: 6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
на замовлення 290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 642.63 грн |
| 2+ | 429.04 грн |
| 6+ | 405.81 грн |
| IXTA1N170DHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO263HV
On-state resistance: 16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO263HV
On-state resistance: 16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
товар відсутній
| IXTA6N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
товар відсутній
| IXTT2N170D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO268; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO268
On-state resistance: 6.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO268; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO268
On-state resistance: 6.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
товар відсутній
| MCC44-12io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 49A; TO240AA; Ufmax: 1.75V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.75V
Max. forward impulse current: 1.23kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 49A; TO240AA; Ufmax: 1.75V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.75V
Max. forward impulse current: 1.23kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1733.24 грн |
| 2+ | 1521.59 грн |
| MCC44-12io8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| DLA40IM800PC-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 40A; D2PAK; Ufmax: 1.26V; Ifsm: 300A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.26V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 300A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 40A; D2PAK; Ufmax: 1.26V; Ifsm: 300A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.26V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 300A
товар відсутній
| DSI30-08AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Max. off-state voltage: 0.8kV
Load current: 30A
Max. forward impulse current: 255A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.25V
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 160W
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Max. off-state voltage: 0.8kV
Load current: 30A
Max. forward impulse current: 255A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.25V
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 160W
Type of diode: rectifying
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.82 грн |
| DSI30-12AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151 грн |
| 8+ | 119.78 грн |
| 20+ | 112.52 грн |
| DSI30-16AS |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
на замовлення 428 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.34 грн |
| 3+ | 181.49 грн |
| 6+ | 150.27 грн |
| 16+ | 142.29 грн |
| 250+ | 137.2 грн |
| DSI30-16AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.35 грн |
| 7+ | 123.41 грн |
| MG06100S-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
товар відсутній
| MG06150S-BN4MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
товар відсутній
| MG06300D-BN4MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
товар відсутній
| MG06400D-BN4MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 400A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 400A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mechanical mounting: screw
товар відсутній
| MG0675S-BN4MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 75A
Case: package S
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 75A
Case: package S
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
товар відсутній
| LOC211P |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Case: SO16
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Case: SO16
товар відсутній
| LOC211PTR |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
Trigger current: 1A
Type of optocoupler: optocoupler
Case: SO16
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
Trigger current: 1A
Type of optocoupler: optocoupler
Case: SO16
товар відсутній
| IXFB82N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
товар відсутній
| IXFH42N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFL82N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Drain-source voltage: 600V
Drain current: 55A
Case: ISOPLUS264™
Polarisation: unipolar
On-state resistance: 80mΩ
Power dissipation: 625W
Kind of channel: enhanced
Gate charge: 240nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Drain-source voltage: 600V
Drain current: 55A
Case: ISOPLUS264™
Polarisation: unipolar
On-state resistance: 80mΩ
Power dissipation: 625W
Kind of channel: enhanced
Gate charge: 240nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1825.49 грн |
| 2+ | 1602.9 грн |
| IXFN82N60P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 200A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 200A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
| CPC1972GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товар відсутній
| MCC95-12io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2347.73 грн |
| 2+ | 2060.98 грн |
| MCMA50P1200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1793.43 грн |
| 2+ | 1574.59 грн |
| 10+ | 1565.88 грн |
| MCMA50P1600TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
товар відсутній
| MDMA50P1200TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
товар відсутній
| MDMA50P1600TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
товар відсутній
| IXFK520N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
товар відсутній
| IXFX520N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Case: PLUS247™
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Case: PLUS247™
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
товар відсутній
| IXFN50N120SK |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Semiconductor structure: single transistor
Reverse recovery time: 54ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Semiconductor structure: single transistor
Reverse recovery time: 54ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Case: SOT227B
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4889.34 грн |
| IXGH50N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 55ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Turn-on time: 55ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO247-3
товар відсутній
| IXGK50N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO264
товар відсутній
| IXYH50N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 750W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 750W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
товар відсутній