| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFK220N17T2 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 220A Power dissipation: 1.25kW Case: TO264 On-state resistance: 6.3mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXFN220N20X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A Case: SOT227B On-state resistance: 6.2mΩ Power dissipation: 390W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 500A Semiconductor structure: single transistor Reverse recovery time: 128ns Drain-source voltage: 200V Drain current: 160A |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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LAA100 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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LAA100L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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LAA100LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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| LAA100LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LAA100S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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| LAA100STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LAA108 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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LAA108P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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| LAA108PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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LAA108S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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| LAA108STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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LAA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 252 шт: термін постачання 21-30 дні (днів) |
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| LAA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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LAA120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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LAA120L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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LAA120LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LAA120LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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LAA120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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| LAA120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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DPF60C200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3 Kind of package: tube Max. forward impulse current: 0.4kA Max. off-state voltage: 200V Max. forward voltage: 0.91V Load current: 30A x2 Semiconductor structure: common cathode; double Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO247-3 |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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DPF60C200HJ | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™ Kind of package: tube Max. forward impulse current: 560A Max. off-state voltage: 200V Max. forward voltage: 0.88V Load current: 30A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: ISOPLUS247™ |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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DPF80C200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W Type of diode: rectifying Max. off-state voltage: 200V Max. forward voltage: 1.22V Load current: 40A x2 Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Features of semiconductor devices: fast switching Max. forward impulse current: 560A Kind of package: tube Reverse recovery time: 55ns Power dissipation: 215W Technology: HiPerFRED™ 2nd Gen |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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| MIXG490PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SimBus F Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV |
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| MIXG490PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SimBus F Type of module: IGBT Technology: X2PT Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV |
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| VHF15-08io5 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 21A; Ifsm: 170A Type of bridge rectifier: half-controlled Max. off-state voltage: 0.8kV Load current: 21A Max. forward impulse current: 170A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: FO-F-A Leads: connectors 6,3x0,8mm Gate current: 50/80mA Features of semiconductor devices: freewheelling diode |
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| VHF15-12io5 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.2kV Load current: 21A Max. forward impulse current: 170A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: FO-F-A Leads: connectors 6,3x0,8mm Gate current: 50/80mA Features of semiconductor devices: freewheelling diode |
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VHF25-08IO7 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A Type of bridge rectifier: half-controlled Max. off-state voltage: 0.8kV Load current: 32A Max. forward impulse current: 180A Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Leads: wire Ø 0.75mm Gate current: 25/50mA Features of semiconductor devices: freewheelling diode |
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VHF25-12IO7 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT Type of bridge rectifier: half-controlled Max. off-state voltage: 1.2kV Load current: 32A Max. forward impulse current: 180A Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Leads: wire Ø 0.75mm Gate current: 25/50mA Features of semiconductor devices: freewheelling diode |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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VHF36-12io5 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.2kV Load current: 40A Max. forward impulse current: 280A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: FO-F-A Leads: connectors 6,3x0,8mm Gate current: 50/80mA Features of semiconductor devices: freewheelling diode |
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| VHFD16-12IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.2kV Load current: 21A Max. forward impulse current: 130A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors 2,0x0,5mm Gate current: 50/80mA Features of semiconductor devices: field diodes; freewheelling diode |
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| VHFD16-16IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 21A Max. forward impulse current: 130A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors 2,0x0,5mm Gate current: 65mA Features of semiconductor devices: field diodes; freewheelling diode |
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| VHFD29-16IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 32A Max. forward impulse current: 440A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors 2,0x0,5mm Gate current: 65mA Features of semiconductor devices: field diodes; freewheelling diode |
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| MDI75-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 60A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 370W Technology: NPT Mechanical mounting: screw |
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| MII75-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Power dissipation: 370W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 100A |
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| MDI100-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 90A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 90A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 560W Technology: NPT Mechanical mounting: screw |
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| MDI145-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 110A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 700W Technology: NPT Mechanical mounting: screw |
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| VUB116-16NOXT | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 84A Case: E2-Pack Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 225A Power dissipation: 390W Mechanical mounting: screw |
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IXTX8N150L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us Drain-source voltage: 1.5kV Drain current: 8A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 700W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: linear power mosfet Gate charge: 250nC Kind of channel: enhanced Mounting: THT Case: PLUS247™ Reverse recovery time: 1.7µs |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IXTK20N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us Drain-source voltage: 1.5kV Drain current: 20A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 215nC Kind of channel: enhanced Mounting: THT Case: TO264 Reverse recovery time: 1.1µs |
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IXTX20N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us Drain-source voltage: 1.5kV Drain current: 20A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 215nC Kind of channel: enhanced Mounting: THT Case: PLUS247™ Reverse recovery time: 1.1µs |
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| MEE300-06DA | IXYS |
Category: Diode modules Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Case: Y4-M6 Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. off-state voltage: 0.6kV Max. forward voltage: 1.19V Load current: 304A Semiconductor structure: double series Max. forward impulse current: 2.4kA |
товар відсутній |
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DSEE30-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Technology: HiPerFRED™ Max. forward voltage: 2.5V Load current: 30A Semiconductor structure: double series Reverse recovery time: 30ns Max. forward impulse current: 200A Power dissipation: 165W Type of diode: rectifying |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IXTA140P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
товар відсутній |
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IXTP140P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
товар відсутній |
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IXTP2N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 4.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 137ns |
товар відсутній |
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IXTY2N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 4.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 137ns |
товар відсутній |
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DH2x61-18A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw Max. off-state voltage: 1.8kV Max. forward voltage: 2.71V Load current: 60A x2 Semiconductor structure: double independent Max. forward impulse current: 700A Electrical mounting: screw Mechanical mounting: screw Type of module: diode Technology: Sonic FRD™ Case: SOT227B |
товар відсутній |
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IXTP24N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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| IXFA36N60X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns |
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IXFH36N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 650W Case: TO247-3 On-state resistance: 0.19Ω Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| IXFH36N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns |
товар відсутній |
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IXFK36N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 650W Case: TO264 On-state resistance: 0.19Ω Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXFP36N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns |
товар відсутній |
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IXFT36N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 650W Case: TO268 On-state resistance: 0.19Ω Mounting: SMD Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IXGH36N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 45ns Turn-off time: 350ns |
на замовлення 299 шт: термін постачання 21-30 дні (днів) |
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IXGH36N60B3C1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 47ns Turn-off time: 350ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXDD604SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
товар відсутній |
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IXDD609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
товар відсутній |
| IXFK220N17T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFN220N20X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
On-state resistance: 6.2mΩ
Power dissipation: 390W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 500A
Semiconductor structure: single transistor
Reverse recovery time: 128ns
Drain-source voltage: 200V
Drain current: 160A
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
On-state resistance: 6.2mΩ
Power dissipation: 390W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 500A
Semiconductor structure: single transistor
Reverse recovery time: 128ns
Drain-source voltage: 200V
Drain current: 160A
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2047.46 грн |
| 2+ | 1797.64 грн |
| LAA100 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 496.59 грн |
| 4+ | 221.34 грн |
| 11+ | 208.57 грн |
| LAA100L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 502.7 грн |
| 4+ | 224.17 грн |
| 11+ | 211.4 грн |
| LAA100LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 502.7 грн |
| 4+ | 224.17 грн |
| 11+ | 211.4 грн |
| LAA100LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LAA100S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 496.59 грн |
| 4+ | 221.34 грн |
| 11+ | 208.57 грн |
| LAA100STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LAA108 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.04 грн |
| 8+ | 116.34 грн |
| 20+ | 109.96 грн |
| LAA108P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.04 грн |
| 8+ | 116.34 грн |
| 20+ | 109.96 грн |
| LAA108PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LAA108S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LAA108STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LAA110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 252 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 473.67 грн |
| 5+ | 207.86 грн |
| 12+ | 196.51 грн |
| LAA110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LAA120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 456.86 грн |
| 5+ | 203.6 грн |
| 12+ | 192.25 грн |
| LAA120L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 496.59 грн |
| 4+ | 221.34 грн |
| 11+ | 208.57 грн |
| LAA120LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 496.59 грн |
| 4+ | 221.34 грн |
| 11+ | 208.57 грн |
| LAA120LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LAA120S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 456.86 грн |
| 5+ | 203.6 грн |
| 12+ | 192.25 грн |
| LAA120STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| DPF60C200HB |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-3
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 401.09 грн |
| DPF60C200HJ |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 560A
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: ISOPLUS247™
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 560A
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: ISOPLUS247™
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 288.78 грн |
| 3+ | 241.2 грн |
| 5+ | 190.12 грн |
| 12+ | 180.19 грн |
| DPF80C200HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward voltage: 1.22V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Features of semiconductor devices: fast switching
Max. forward impulse current: 560A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 215W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward voltage: 1.22V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Features of semiconductor devices: fast switching
Max. forward impulse current: 560A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 215W
Technology: HiPerFRED™ 2nd Gen
на замовлення 71 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.63 грн |
| 3+ | 222.04 грн |
| 10+ | 207.86 грн |
| 30+ | 202.89 грн |
| MIXG490PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
товар відсутній
| MIXG490PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
товар відсутній
| VHF15-08io5 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 21A; Ifsm: 170A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 21A
Max. forward impulse current: 170A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 21A; Ifsm: 170A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 21A
Max. forward impulse current: 170A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
| VHF15-12io5 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 170A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 170A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
| VHF25-08IO7 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 25/50mA
Features of semiconductor devices: freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 25/50mA
Features of semiconductor devices: freewheelling diode
товар відсутній
| VHF25-12IO7 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 25/50mA
Features of semiconductor devices: freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 25/50mA
Features of semiconductor devices: freewheelling diode
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1110.06 грн |
| 2+ | 822.2 грн |
| 3+ | 776.8 грн |
| VHF36-12io5 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
| VHFD16-12IO1 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
| VHFD16-16IO1 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
| VHFD29-16IO1 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 440A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 440A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
| MDI75-12A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 370W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 370W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MII75-12A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 370W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 370W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 100A
товар відсутній
| MDI100-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 90A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 90A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MDI145-12A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| VUB116-16NOXT |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
товар відсутній
| IXTX8N150L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.7µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.7µs
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2284.3 грн |
| IXTK20N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Reverse recovery time: 1.1µs
товар відсутній
| IXTX20N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.1µs
товар відсутній
| MEE300-06DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
товар відсутній
| DSEE30-12A |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Technology: HiPerFRED™
Max. forward voltage: 2.5V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Technology: HiPerFRED™
Max. forward voltage: 2.5V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Type of diode: rectifying
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1233.83 грн |
| 2+ | 1083.27 грн |
| IXTA140P05T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
товар відсутній
| IXTP140P05T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
товар відсутній
| IXTP2N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
товар відсутній
| IXTY2N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
товар відсутній
| DH2x61-18A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.71V
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: Sonic FRD™
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.71V
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: Sonic FRD™
Case: SOT227B
товар відсутній
| IXTP24N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.99 грн |
| 3+ | 216.37 грн |
| 5+ | 176.64 грн |
| 13+ | 166.71 грн |
| IXFA36N60X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
| IXFH36N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH36N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
| IXFK36N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 809.82 грн |
| 2+ | 571.07 грн |
| 4+ | 539.86 грн |
| IXFP36N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
| IXFT36N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXGH36N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
на замовлення 299 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 380.46 грн |
| 3+ | 317.82 грн |
| 4+ | 241.91 грн |
| 10+ | 228.43 грн |
| IXGH36N60B3C1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3043.69 грн |
| IXDD604SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
| IXDD609SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній