Продукція > IXYS > MIXA80W1200TED

MIXA80W1200TED IXYS

Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Power dissipation: 390W
кількість в упаковці: 1 шт

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Технічний опис MIXA80W1200TED IXYS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: motors; photovoltaics, Case: E2-Pack, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Sonic FRD™; XPT™, Topology: IGBT three-phase bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 84A, Pulsed collector current: 225A, Power dissipation: 390W, кількість в упаковці: 1 шт.

Інші пропозиції MIXA80W1200TED

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MIXA80W1200TED	Виробник : IXYS	Description: IGBT MODULE 1200V 120A 390W E2	товар відсутній
MIXA80W1200TED	Виробник : IXYS	IGBT Modules Six-Pack XPT IGBT	товар відсутній
MIXA80W1200TED	Виробник : IXYS	Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Case: E2-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 84A Pulsed collector current: 225A Power dissipation: 390W	товар відсутній