Технічний опис MIXA81H1200EH IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W, Topology: H-bridge, Technology: Sonic FRD™; XPT™, Case: E3-Pack, Application: motors; photovoltaics, Power dissipation: 390W, Collector current: 84A, Type of module: IGBT, Max. off-state voltage: 1.2kV, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Pulsed collector current: 225A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції MIXA81H1200EH
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MIXA81H1200EH | Виробник : IXYS |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Topology: H-bridge Technology: Sonic FRD™; XPT™ Case: E3-Pack Application: motors; photovoltaics Power dissipation: 390W Collector current: 84A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 225A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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MIXA81H1200EH | Виробник : IXYS |
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товар відсутній |
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MIXA81H1200EH | Виробник : IXYS |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Topology: H-bridge Technology: Sonic FRD™; XPT™ Case: E3-Pack Application: motors; photovoltaics Power dissipation: 390W Collector current: 84A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 225A Electrical mounting: Press-in PCB Mechanical mounting: screw |
товар відсутній |