| Фото | Назва | Виробник | Інформація |
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IXTH90P10P | IXYS |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -90A Power dissipation: 462W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 144ns кількість в упаковці: 1 шт |
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IXTH96N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO247-3 Mounting: THT Power dissipation: 600W Gate charge: 145nC Polarisation: unipolar Technology: PolarHT™ Drain current: 96A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 24mΩ Reverse recovery time: 160ns кількість в упаковці: 1 шт |
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IXTH96N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Power dissipation: 625W Case: TO247-3 On-state resistance: 29mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 158ns кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXTH96P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 55ns кількість в упаковці: 1 шт |
на замовлення 249 шт: термін постачання 14-21 дні (днів) |
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IXTJ4N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns Drain-source voltage: 1.5kV Drain current: 2.5A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 110W Polarisation: unipolar Kind of package: tube Gate charge: 44.5nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: ISO247™ Reverse recovery time: 900ns кількість в упаковці: 1 шт |
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IXTJ6N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us Drain-source voltage: 1.5kV Drain current: 3A On-state resistance: 3.85Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: ISO247™ Reverse recovery time: 1.5µs кількість в упаковці: 1 шт |
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IXTK100N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 600W Case: TO264 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
на замовлення 229 шт: термін постачання 14-21 дні (днів) |
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IXTK102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264 Case: TO264 Mounting: THT Kind of package: tube Drain current: 102A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 700W Polarisation: unipolar Gate charge: 224nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 250ns Drain-source voltage: 300V кількість в упаковці: 1 шт |
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IXTK102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 102A On-state resistance: 30mΩ кількість в упаковці: 1 шт |
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IXTK110N20L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns кількість в упаковці: 1 шт |
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IXTK120N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Power dissipation: 714W Case: TO264 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns кількість в упаковці: 1 шт |
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IXTK120N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 700W Case: TO264 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
на замовлення 189 шт: термін постачання 14-21 дні (днів) |
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IXTK120N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 505ns кількість в упаковці: 1 шт |
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IXTK120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -120A Power dissipation: 1.04kW Case: PLUS264™ Gate-source voltage: ±15V On-state resistance: 30mΩ Mounting: THT Gate charge: 740nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
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IXTK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 800W Case: TO264 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns кількість в упаковці: 1 шт |
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IXTK140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 140A Power dissipation: 1.04kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 14-21 дні (днів) |
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IXTK170N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO264 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
на замовлення 126 шт: термін постачання 14-21 дні (днів) |
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IXTK170P10P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -170A Power dissipation: 890W Case: TO264 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 176ns кількість в упаковці: 1 шт |
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IXTK17N120L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 700W Case: TO264 On-state resistance: 0.9Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.83µs кількість в упаковці: 1 шт |
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IXTK180N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 180A Power dissipation: 800W Case: TO264 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns кількість в упаковці: 1 шт |
на замовлення 254 шт: термін постачання 14-21 дні (днів) |
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IXTK200N10L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W Type of transistor: N-MOSFET Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 1.04kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 540nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 245ns кількість в упаковці: 1 шт |
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IXTK200N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 800W Case: TO264 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 100ns кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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IXTK20N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us Case: TO264 Mounting: THT Kind of package: tube Reverse recovery time: 1.1µs Drain-source voltage: 1.5kV Drain current: 20A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXTK210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Technology: TrenchP™ Mounting: THT Reverse recovery time: 200ns Case: TO264 Kind of package: tube Power dissipation: 1.04kW Drain-source voltage: -100V Drain current: -210A On-state resistance: 7.5mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 740nC Kind of channel: enhanced Gate-source voltage: ±15V кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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IXTK22N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: TO264 On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs кількість в упаковці: 1 шт |
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IXTK240N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 240A Power dissipation: 960W Case: TO264 On-state resistance: 7mΩ Mounting: THT Gate charge: 546nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 206ns кількість в упаковці: 1 шт |
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IXTK32P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264 Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Type of transistor: P-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Gate charge: 196nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO264 кількість в упаковці: 1 шт |
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IXTK3N250L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 3A Power dissipation: 417W Case: TO264 On-state resistance: 10Ω Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 370ns кількість в упаковці: 1 шт |
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IXTK40P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; TO264 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -40A Power dissipation: 890W Case: TO264 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 477ns кількість в упаковці: 1 шт |
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IXTK46N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Power dissipation: 700W Case: TO264 On-state resistance: 0.16Ω Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.6µs кількість в упаковці: 1 шт |
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IXTK550N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Power dissipation: 1.25kW Case: TO264 On-state resistance: 1.6mΩ Mounting: THT Gate charge: 595nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns кількість в упаковці: 1 шт |
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IXTK600N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO264 Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Features of semiconductor devices: thrench gate power mosfet Gate charge: 590nC Kind of channel: enhanced Reverse recovery time: 100ns кількість в упаковці: 1 шт |
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IXTK60N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO264 Drain-source voltage: 500V Drain current: 60A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 960W Features of semiconductor devices: linear power mosfet Gate charge: 610nC Kind of channel: enhanced Reverse recovery time: 980ns кількість в упаковці: 1 шт |
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IXTK82N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264 Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 142nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 82A On-state resistance: 38mΩ кількість в упаковці: 1 шт |
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IXTK8N150L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; TO264; 1.7us Drain-source voltage: 1.5kV Drain current: 8A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 700W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: linear power mosfet Gate charge: 250nC Kind of channel: enhanced Mounting: THT Case: TO264 Reverse recovery time: 1.7µs кількість в упаковці: 1 шт |
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IXTK90N25L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 90A Power dissipation: 960W Case: TO264 On-state resistance: 36mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 266ns кількість в упаковці: 1 шт |
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IXTK90P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Power dissipation: 890W Case: TO264 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 315ns кількість в упаковці: 1 шт |
на замовлення 44 шт: термін постачання 14-21 дні (днів) |
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| IXTL2N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™ Case: ISOPLUS i5-pac™ Mounting: THT Kind of package: tube Drain current: 2A Power dissipation: 220W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Gate charge: 180nC Reverse recovery time: 1.75µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 20Ω кількість в упаковці: 1 шт |
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| IXTL2N470 | IXYS |
IXTL2N470 THT N channel transistors |
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IXTN102N65X2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A Case: SOT227B Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 152nC Technology: X2-Class Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 204A Semiconductor structure: single transistor Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 76A On-state resistance: 30mΩ кількість в упаковці: 1 шт |
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IXTN110N20L2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 275A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 24mΩ Gate charge: 500nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 420ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN120P20T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -106A Pulsed drain current: -400A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±15V On-state resistance: 30mΩ Gate charge: 740nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN170P10P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A Type of module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Gate charge: 240nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -510A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 176ns Drain-source voltage: -100V Drain current: -170A On-state resistance: 14mΩ Power dissipation: 890W Polarisation: unipolar кількість в упаковці: 300 шт |
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IXTN17N120L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A Technology: Linear™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 34A Power dissipation: 540W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.9Ω Gate charge: 155nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 1.83µs Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN200N10L2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 178A Pulsed drain current: 500A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 11mΩ Gate charge: 540nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 245ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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IXTN200N10T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 500A Power dissipation: 550W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 5.5mΩ Gate charge: 152nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 76ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN210P10T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A Technology: TrenchP™ Reverse recovery time: 200ns Semiconductor structure: single transistor Case: SOT227B Power dissipation: 830W Drain-source voltage: -100V Drain current: -210A On-state resistance: 7.5mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 740nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: -800A кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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IXTN22N100L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 22A On-state resistance: 0.6Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 0.27µC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 50A Case: SOT227B Semiconductor structure: single transistor кількість в упаковці: 1 шт |
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IXTN240N075L2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 225A Pulsed drain current: 720A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 7mΩ Gate charge: 546nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 206ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN30N100L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Gate charge: 545nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 70A Semiconductor structure: single transistor Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Power dissipation: 800W Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN32P60P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A Semiconductor structure: single transistor Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Power dissipation: 890W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 196nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -96A Case: SOT227B кількість в упаковці: 1 шт |
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IXTN40P50P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -40A Pulsed drain current: -120A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.23Ω Gate charge: 205nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 477ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN46N50L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 100A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.16Ω Gate charge: 260nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 0.6µs Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN550N055T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 1.65kA Power dissipation: 940W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 1.3mΩ Gate charge: 595nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 100ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN600N04T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.3mΩ Power dissipation: 940W Type of module: MOSFET transistor Gate charge: 590nC Technology: GigaMOS™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1.8kA Semiconductor structure: single transistor Reverse recovery time: 100ns кількість в упаковці: 1 шт |
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IXTN60N50L2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Drain-source voltage: 500V Drain current: 53A On-state resistance: 0.1Ω Power dissipation: 735W Type of module: MOSFET transistor Gate charge: 610nC Technology: Linear L2™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 150A Semiconductor structure: single transistor Reverse recovery time: 980ns кількість в упаковці: 1 шт |
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IXTN62N50L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Technology: Linear™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 62A Pulsed drain current: 150A Power dissipation: 800W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.1Ω Gate charge: 550nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 0.5µs Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXTN660N04T4 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA Technology: TrenchT4™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 660A Pulsed drain current: 1.8kA Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±15V On-state resistance: 0.85mΩ Gate charge: 0.86µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 60ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| IXTN80N30L2 | IXYS | IXTN80N30L2 Transistor modules MOSFET |
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IXTN8N150L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A Drain-source voltage: 1.5kV Drain current: 7.5A On-state resistance: 3.6Ω Power dissipation: 545W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 250nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 20A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 1.7µs кількість в упаковці: 1 шт |
товар відсутній |
| IXTH90P10P |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH96N20P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO247-3
Mounting: THT
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 24mΩ
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO247-3
Mounting: THT
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 24mΩ
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH96N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 158ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 158ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 568.52 грн |
| 3+ | 391.71 грн |
| 8+ | 357.17 грн |
| IXTH96P085T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
кількість в упаковці: 1 шт
на замовлення 249 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 643.57 грн |
| 3+ | 445.09 грн |
| 7+ | 405.08 грн |
| IXTJ4N150 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: ISO247™
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: ISO247™
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
| IXTJ6N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 3.85Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: ISO247™
Reverse recovery time: 1.5µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 3.85Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: ISO247™
Reverse recovery time: 1.5µs
кількість в упаковці: 1 шт
товар відсутній
| IXTK100N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 229 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1087.32 грн |
| 2+ | 748.14 грн |
| 3+ | 719.56 грн |
| 4+ | 680.36 грн |
| IXTK102N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain current: 102A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Gate charge: 224nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain current: 102A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Gate charge: 224nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
кількість в упаковці: 1 шт
товар відсутній
| IXTK102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
товар відсутній
| IXTK110N20L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK120N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK120N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 189 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1443.82 грн |
| 2+ | 1008.68 грн |
| 3+ | 919.05 грн |
| IXTK120N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 505ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 505ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK120P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK140N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1577.97 грн |
| 2+ | 1439.29 грн |
| 10+ | 1331.98 грн |
| IXTK170N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
на замовлення 126 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 998.19 грн |
| 2+ | 693.86 грн |
| 3+ | 667.29 грн |
| 5+ | 630.71 грн |
| IXTK170P10P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -170A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 176ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -170A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 176ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK17N120L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
кількість в упаковці: 1 шт
товар відсутній
| IXTK180N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 254 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1416.61 грн |
| 2+ | 931.79 грн |
| 3+ | 896.4 грн |
| 4+ | 847.62 грн |
| IXTK200N10L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 245ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 245ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK200N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1184.89 грн |
| 2+ | 911.88 грн |
| 4+ | 830.2 грн |
| IXTK20N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXTK210P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: TO264
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: TO264
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1980.44 грн |
| 2+ | 1805.67 грн |
| IXTK22N100L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
| IXTK240N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK32P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
| IXTK3N250L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 3A
Power dissipation: 417W
Case: TO264
On-state resistance: 10Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 370ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 3A
Power dissipation: 417W
Case: TO264
On-state resistance: 10Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 370ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK40P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK46N50L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
кількість в упаковці: 1 шт
товар відсутній
| IXTK550N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK600N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhanced
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhanced
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK60N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Drain-source voltage: 500V
Drain current: 60A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Kind of channel: enhanced
Reverse recovery time: 980ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Drain-source voltage: 500V
Drain current: 60A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Kind of channel: enhanced
Reverse recovery time: 980ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK82N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 142nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 82A
On-state resistance: 38mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 142nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 82A
On-state resistance: 38mΩ
кількість в упаковці: 1 шт
товар відсутній
| IXTK8N150L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; TO264; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; TO264; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
товар відсутній
| IXTK90N25L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
кількість в упаковці: 1 шт
товар відсутній
| IXTK90P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 315ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 315ns
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1405.35 грн |
| 3+ | 1281.88 грн |
| 25+ | 1191.72 грн |
| IXTL2N450 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Case: ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Drain current: 2A
Power dissipation: 220W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Gate charge: 180nC
Reverse recovery time: 1.75µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 20Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Case: ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Drain current: 2A
Power dissipation: 220W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Gate charge: 180nC
Reverse recovery time: 1.75µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 20Ω
кількість в упаковці: 1 шт
товар відсутній
| IXTN102N65X2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Technology: X2-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 204A
Semiconductor structure: single transistor
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 76A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Technology: X2-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 204A
Semiconductor structure: single transistor
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 76A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
товар відсутній
| IXTN110N20L2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN120P20T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -106A
Pulsed drain current: -400A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -106A
Pulsed drain current: -400A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN170P10P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -510A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 300 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -510A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 300 шт
товар відсутній
| IXTN17N120L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN200N10L2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 178A
Pulsed drain current: 500A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Gate charge: 540nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 245ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 178A
Pulsed drain current: 500A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Gate charge: 540nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 245ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3424.26 грн |
| IXTN200N10T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 550W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.5mΩ
Gate charge: 152nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 76ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 550W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.5mΩ
Gate charge: 152nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 76ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN210P10T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Case: SOT227B
Power dissipation: 830W
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: -800A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Case: SOT227B
Power dissipation: 830W
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: -800A
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3555.6 грн |
| IXTN22N100L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.6Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 50A
Case: SOT227B
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.6Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 50A
Case: SOT227B
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN240N075L2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 225A
Pulsed drain current: 720A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7mΩ
Gate charge: 546nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 206ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 225A
Pulsed drain current: 720A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7mΩ
Gate charge: 546nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 206ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN30N100L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Gate charge: 545nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 70A
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Power dissipation: 800W
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Gate charge: 545nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 70A
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Power dissipation: 800W
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN32P60P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -96A
Case: SOT227B
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -96A
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
| IXTN40P50P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Pulsed drain current: -120A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 477ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Pulsed drain current: -120A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 477ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN46N50L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN550N055T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 1.65kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 595nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 1.65kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 595nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN600N04T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Type of module: MOSFET transistor
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Type of module: MOSFET transistor
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
| IXTN60N50L2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 500V
Drain current: 53A
On-state resistance: 0.1Ω
Power dissipation: 735W
Type of module: MOSFET transistor
Gate charge: 610nC
Technology: Linear L2™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 150A
Semiconductor structure: single transistor
Reverse recovery time: 980ns
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 500V
Drain current: 53A
On-state resistance: 0.1Ω
Power dissipation: 735W
Type of module: MOSFET transistor
Gate charge: 610nC
Technology: Linear L2™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 150A
Semiconductor structure: single transistor
Reverse recovery time: 980ns
кількість в упаковці: 1 шт
товар відсутній
| IXTN62N50L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Pulsed drain current: 150A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 550nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Pulsed drain current: 150A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 550nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN660N04T4 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA
Technology: TrenchT4™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 660A
Pulsed drain current: 1.8kA
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 0.85mΩ
Gate charge: 0.86µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 60ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA
Technology: TrenchT4™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 660A
Pulsed drain current: 1.8kA
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 0.85mΩ
Gate charge: 0.86µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 60ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXTN8N150L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Drain-source voltage: 1.5kV
Drain current: 7.5A
On-state resistance: 3.6Ω
Power dissipation: 545W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 250nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 20A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Drain-source voltage: 1.5kV
Drain current: 7.5A
On-state resistance: 3.6Ω
Power dissipation: 545W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 250nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 20A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
товар відсутній