Технічний опис IXTK240N075L2 Littelfuse
Description: MOSFET N-CH 75V 240A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: TO-264, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V.
Інші пропозиції IXTK240N075L2
| Фото | Назва | Виробник | Інформація |
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IXTK240N075L2 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 240A Power dissipation: 960W Case: TO264 On-state resistance: 7mΩ Mounting: THT Gate charge: 546nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 206ns кількість в упаковці: 1 шт |
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IXTK240N075L2 | Виробник : IXYS |
Description: MOSFET N-CH 75V 240A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-264 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
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IXTK240N075L2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 240A Power dissipation: 960W Case: TO264 On-state resistance: 7mΩ Mounting: THT Gate charge: 546nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 206ns |
товар відсутній |