Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTT8P50 | IXYS |
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на замовлення 48 шт: термін постачання 14-21 дні (днів) |
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IXTT90P10P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -90A Power dissipation: 462W Case: TO268 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 144ns кількість в упаковці: 1 шт |
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IXTT96N15P | IXYS |
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IXTU01N100 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251 Mounting: THT Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO251 On-state resistance: 80Ω кількість в упаковці: 1 шт |
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IXTU4N70X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 11.8nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 68 шт: термін постачання 14-21 дні (днів) |
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IXTU8N70X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 8A; Idm: 16A; 150W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Pulsed drain current: 16A Power dissipation: 150W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 66 шт: термін постачання 14-21 дні (днів) |
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IXTX102N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns Case: PLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 102A On-state resistance: 30mΩ кількість в упаковці: 1 шт |
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IXTX110N20L2 | IXYS |
![]() Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns Type of transistor: N-MOSFET Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 420ns кількість в упаковці: 1 шт |
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IXTX120N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns Mounting: THT Drain current: 120A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 230nC Kind of channel: enhanced Case: PLUS247™ Reverse recovery time: 505ns Drain-source voltage: 650V кількість в упаковці: 1 шт |
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IXTX120P20T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Mounting: THT Drain current: -120A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 740nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Case: PLUS247™ Reverse recovery time: 300ns Drain-source voltage: -200V кількість в упаковці: 1 шт |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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IXTX170P10P | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns Kind of package: tube Gate charge: 240nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: PLUS247™ Reverse recovery time: 176ns Drain-source voltage: -100V Drain current: -170A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 890W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 48 шт: термін постачання 14-21 дні (днів) |
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IXTX17N120L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 700W Case: PLUS247™ On-state resistance: 0.9Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.83µs кількість в упаковці: 1 шт |
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IXTX1R4N450HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 5A Power dissipation: 960W Case: TO247PLUS-HV Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns кількість в упаковці: 1 шт |
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IXTX200N10L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 11mΩ Mounting: THT Gate charge: 540nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 245ns кількість в упаковці: 1 шт |
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IXTX20N150 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us Case: PLUS247™ Mounting: THT Kind of package: tube Reverse recovery time: 1.1µs Drain-source voltage: 1.5kV Drain current: 20A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 300 шт |
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IXTX210P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -210A Power dissipation: 1.04kW Case: PLUS247™ Gate-source voltage: ±15V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 740nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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IXTX22N100L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: PLUS247™ On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs кількість в упаковці: 1 шт |
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IXTX240N075L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns Mounting: THT Case: PLUS247™ Kind of package: tube Features of semiconductor devices: linear power mosfet Gate charge: 546nC Kind of channel: enhanced Reverse recovery time: 206ns Drain-source voltage: 75V Drain current: 240A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar кількість в упаковці: 1 шт |
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IXTX24N100 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.4Ω Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns кількість в упаковці: 1 шт |
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IXTX32P60P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Type of transistor: P-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Gate charge: 196nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: PLUS247™ кількість в упаковці: 1 шт |
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IXTX3N250L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns Case: PLUS247™ Mounting: THT Kind of package: tube Drain-source voltage: 2.5kV Type of transistor: N-MOSFET On-state resistance: 10Ω Reverse recovery time: 370ns Power dissipation: 417W Gate charge: 230nC Polarisation: unipolar Features of semiconductor devices: linear power mosfet Drain current: 3A Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXTX40P50P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; 477ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -40A Power dissipation: 890W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 477ns кількість в упаковці: 1 шт |
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IXTX46N50L | IXYS |
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IXTX4N300P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns Reverse recovery time: 420ns Drain-source voltage: 3kV Drain current: 4A Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 139nC Technology: Polar3™ Kind of channel: enhanced Mounting: THT Case: TO247PLUS-HV кількість в упаковці: 1 шт |
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IXTX550N055T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 1.6mΩ Mounting: THT Gate charge: 595nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns кількість в упаковці: 1 шт |
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IXTX600N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 1.5mΩ Features of semiconductor devices: thrench gate power mosfet Gate charge: 590nC Drain current: 600A Kind of channel: enhanced Drain-source voltage: 40V Mounting: THT Reverse recovery time: 100ns Case: PLUS247™ Polarisation: unipolar Power dissipation: 1.25kW кількість в упаковці: 1 шт |
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IXTX60N50L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 0.1Ω Features of semiconductor devices: linear power mosfet Gate charge: 610nC Drain current: 60A Kind of channel: enhanced Drain-source voltage: 500V Mounting: THT Reverse recovery time: 980ns Case: PLUS247™ Polarisation: unipolar Power dissipation: 960W кількість в упаковці: 1 шт |
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IXTX6N200P3HV | IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2kV Drain current: 6A Power dissipation: 960W Case: TO247PLUS-HV On-state resistance: 4Ω Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 520ns кількість в упаковці: 1 шт |
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IXTX8N150L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us Drain-source voltage: 1.5kV Drain current: 8A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 700W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: linear power mosfet Gate charge: 250nC Kind of channel: enhanced Mounting: THT Case: PLUS247™ Reverse recovery time: 1.7µs кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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IXTX90N25L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 90A Power dissipation: 960W Case: PLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 266ns кількість в упаковці: 1 шт |
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IXTX90P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Power dissipation: 890W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 315ns кількість в упаковці: 1 шт |
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IXTY01N100 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Mounting: SMD Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω кількість в упаковці: 1 шт |
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IXTY01N100D | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns Mounting: SMD Power dissipation: 25W Gate charge: 0.1µC Polarisation: unipolar Drain current: 0.1A Kind of channel: depleted Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω Reverse recovery time: 2ns кількість в упаковці: 1 шт |
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IXTY02N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.2A Power dissipation: 33W Case: TO252 On-state resistance: 75Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs кількість в упаковці: 1 шт |
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IXTY02N50D | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 25W Case: TO252 Gate-source voltage: ±20V On-state resistance: 30Ω Mounting: SMD Kind of channel: depleted Reverse recovery time: 1µs кількість в упаковці: 1 шт |
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IXTY08N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO252 On-state resistance: 21Ω Mounting: SMD Gate charge: 325nC Kind of package: tube Kind of channel: depleted кількість в упаковці: 1 шт |
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IXTY08N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns Mounting: SMD Case: TO252 Kind of package: tube Power dissipation: 42W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 0.8A On-state resistance: 20Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXTY08N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO252 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns кількість в упаковці: 1 шт |
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IXTY10P15T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -10A Power dissipation: 83W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
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IXTY14N60X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 18A Power dissipation: 180W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 16.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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IXTY15P15T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -15A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 116ns кількість в упаковці: 1 шт |
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IXTY18P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Power dissipation: 83W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 62ns кількість в упаковці: 1 шт |
на замовлення 113 шт: термін постачання 14-21 дні (днів) |
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IXTY1N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1A Power dissipation: 50W Case: TO252 On-state resistance: 15Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns кількість в упаковці: 1 шт |
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IXTY1N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Power dissipation: 63W Case: TO252 On-state resistance: 20Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns кількість в упаковці: 1 шт |
на замовлення 128 шт: термін постачання 14-21 дні (днів) |
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IXTY1N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 42W Case: TO252 On-state resistance: 14Ω Mounting: SMD Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 700ns кількість в упаковці: 1 шт |
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IXTY1R4N100P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 63W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.8Ω Mounting: SMD Gate charge: 17.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns кількість в упаковці: 1 шт |
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IXTY1R4N120P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 13Ω Mounting: SMD Gate charge: 24.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns кількість в упаковці: 1 шт |
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IXTY1R4N120PHV | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Case: TO252HV Polarisation: unipolar On-state resistance: 13Ω Type of transistor: N-MOSFET Power dissipation: 86W Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 24.8nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3A Mounting: SMD Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1.4A кількість в упаковці: 1 шт |
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IXTY1R6N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 645nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTY1R6N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns Mounting: SMD Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO252 Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
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IXTY26P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns кількість в упаковці: 1 шт |
на замовлення 70 шт: термін постачання 14-21 дні (днів) |
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IXTY2N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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IXTY2N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 4.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 137ns кількість в упаковці: 1 шт |
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IXTY2P50PA | IXYS |
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товар відсутній |
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IXTY32P05T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -32A Power dissipation: 83W Case: TO252 Gate-source voltage: ±15V On-state resistance: 39mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 26ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTY3N50P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 9.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns кількість в упаковці: 1 шт |
на замовлення 104 шт: термін постачання 14-21 дні (днів) |
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IXTY44N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 130W Case: TO252 On-state resistance: 30mΩ Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns кількість в упаковці: 1 шт |
на замовлення 350 шт: термін постачання 14-21 дні (днів) |
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IXTY48P05T | IXYS |
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товар відсутній |
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IXTY4N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 160ns кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
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IXTY8N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
на замовлення 63 шт: термін постачання 14-21 дні (днів) |
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IXTT8P50 |
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Виробник: IXYS
IXTT8P50 SMD P channel transistors
IXTT8P50 SMD P channel transistors
на замовлення 48 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 744.89 грн |
2+ | 523.56 грн |
6+ | 494.81 грн |
IXTT90P10P |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
кількість в упаковці: 1 шт
товар відсутній
IXTU01N100 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251
Mounting: THT
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO251
On-state resistance: 80Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251
Mounting: THT
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO251
On-state resistance: 80Ω
кількість в упаковці: 1 шт
товар відсутній
IXTU4N70X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 68 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 207.33 грн |
5+ | 180.02 грн |
8+ | 138.51 грн |
21+ | 130.67 грн |
IXTU8N70X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; Idm: 16A; 150W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 150W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; Idm: 16A; 150W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 150W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 66 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 253.3 грн |
5+ | 218.92 грн |
7+ | 168.13 грн |
17+ | 158.55 грн |
IXTX102N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
товар відсутній
IXTX110N20L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
IXTX120N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Mounting: THT
Drain current: 120A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhanced
Case: PLUS247™
Reverse recovery time: 505ns
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Mounting: THT
Drain current: 120A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhanced
Case: PLUS247™
Reverse recovery time: 505ns
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IXTX120P20T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2112.72 грн |
2+ | 1926.9 грн |
3+ | 1854.66 грн |
10+ | 1853.79 грн |
30+ | 1784.1 грн |
IXTX170P10P |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Kind of package: tube
Gate charge: 240nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Kind of package: tube
Gate charge: 240nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1375.33 грн |
3+ | 1253.84 грн |
IXTX17N120L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
кількість в упаковці: 1 шт
товар відсутній
IXTX1R4N450HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 5A
Power dissipation: 960W
Case: TO247PLUS-HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 5A
Power dissipation: 960W
Case: TO247PLUS-HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
кількість в упаковці: 1 шт
товар відсутній
IXTX200N10L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 245ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 245ns
кількість в упаковці: 1 шт
товар відсутній
IXTX20N150 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 300 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 300 шт
товар відсутній
IXTX210P10T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -210A
Power dissipation: 1.04kW
Case: PLUS247™
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -210A
Power dissipation: 1.04kW
Case: PLUS247™
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2079.88 грн |
2+ | 1896.14 грн |
IXTX22N100L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXTX240N075L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 546nC
Kind of channel: enhanced
Reverse recovery time: 206ns
Drain-source voltage: 75V
Drain current: 240A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Mounting: THT
Case: PLUS247™
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 546nC
Kind of channel: enhanced
Reverse recovery time: 206ns
Drain-source voltage: 75V
Drain current: 240A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTX24N100 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
кількість в упаковці: 1 шт
товар відсутній
IXTX32P60P |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
кількість в упаковці: 1 шт
товар відсутній
IXTX3N250L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTX40P50P |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
кількість в упаковці: 1 шт
товар відсутній
IXTX4N300P3HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Reverse recovery time: 420ns
Drain-source voltage: 3kV
Drain current: 4A
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 139nC
Technology: Polar3™
Kind of channel: enhanced
Mounting: THT
Case: TO247PLUS-HV
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Reverse recovery time: 420ns
Drain-source voltage: 3kV
Drain current: 4A
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 139nC
Technology: Polar3™
Kind of channel: enhanced
Mounting: THT
Case: TO247PLUS-HV
кількість в упаковці: 1 шт
товар відсутній
IXTX550N055T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
IXTX600N04T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 1.5mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Drain current: 600A
Kind of channel: enhanced
Drain-source voltage: 40V
Mounting: THT
Reverse recovery time: 100ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 1.25kW
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 1.5mΩ
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Drain current: 600A
Kind of channel: enhanced
Drain-source voltage: 40V
Mounting: THT
Reverse recovery time: 100ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 1.25kW
кількість в упаковці: 1 шт
товар відсутній
IXTX60N50L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 500V
Mounting: THT
Reverse recovery time: 980ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 960W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 0.1Ω
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 500V
Mounting: THT
Reverse recovery time: 980ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 960W
кількість в упаковці: 1 шт
товар відсутній
IXTX6N200P3HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 6A
Power dissipation: 960W
Case: TO247PLUS-HV
On-state resistance: 4Ω
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 520ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 6A
Power dissipation: 960W
Case: TO247PLUS-HV
On-state resistance: 4Ω
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 520ns
кількість в упаковці: 1 шт
товар відсутній
IXTX8N150L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2794.76 грн |
30+ | 2647 грн |
IXTX90N25L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
кількість в упаковці: 1 шт
товар відсутній
IXTX90P20P |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 315ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 315ns
кількість в упаковці: 1 шт
товар відсутній
IXTY01N100 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
кількість в упаковці: 1 шт
товар відсутній
IXTY01N100D |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Mounting: SMD
Power dissipation: 25W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 0.1A
Kind of channel: depleted
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Reverse recovery time: 2ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Mounting: SMD
Power dissipation: 25W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 0.1A
Kind of channel: depleted
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Reverse recovery time: 2ns
кількість в упаковці: 1 шт
товар відсутній
IXTY02N120P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
товар відсутній
IXTY02N50D |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depleted
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depleted
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXTY08N100D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
кількість в упаковці: 1 шт
товар відсутній
IXTY08N100P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Case: TO252
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Case: TO252
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTY08N50D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
кількість в упаковці: 1 шт
товар відсутній
IXTY10P15T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
IXTY14N60X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 336.8 грн |
5+ | 233.4 грн |
13+ | 212.56 грн |
IXTY15P15T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
товар відсутній
IXTY18P10T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
кількість в упаковці: 1 шт
на замовлення 113 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 262.68 грн |
5+ | 227.97 грн |
6+ | 179.46 грн |
16+ | 169.87 грн |
IXTY1N100P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: TO252
On-state resistance: 15Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: TO252
On-state resistance: 15Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1N120P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
на замовлення 128 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 228.91 грн |
5+ | 198.12 грн |
7+ | 161.16 грн |
18+ | 151.58 грн |
IXTY1N80P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N100P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120PHV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252HV
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252HV
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
кількість в упаковці: 1 шт
товар відсутній
IXTY1R6N100D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
кількість в упаковці: 1 шт
товар відсутній
IXTY1R6N50D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Mounting: SMD
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO252
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Mounting: SMD
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO252
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IXTY26P10T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 283.32 грн |
5+ | 246.06 грн |
6+ | 179.46 грн |
16+ | 169.87 грн |
IXTY2N100P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 222.34 грн |
5+ | 193.59 грн |
7+ | 148.09 грн |
19+ | 140.25 грн |
IXTY2N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
кількість в упаковці: 1 шт
товар відсутній
IXTY32P05T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 26ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 26ns
кількість в упаковці: 1 шт
товар відсутній
IXTY3N50P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 104 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.54 грн |
7+ | 44.96 грн |
10+ | 43.12 грн |
IXTY44N10T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
кількість в упаковці: 1 шт
на замовлення 350 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 166.05 грн |
5+ | 144.74 грн |
10+ | 108.89 грн |
26+ | 103.67 грн |
IXTY4N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 144.48 грн |
5+ | 123.94 грн |
10+ | 111.51 грн |
20+ | 108.02 грн |
26+ | 105.41 грн |
70+ | 101.92 грн |
IXTY8N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 63 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 175.43 грн |
5+ | 150.17 грн |
8+ | 130.67 грн |
20+ | 129.8 грн |
22+ | 123.7 грн |
70+ | 121.09 грн |