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IXTH12N100L IXTH12N100L IXYS IXTH12N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXTH12N150 IXTH12N150 IXYS IXT_12N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO247-3; 1.2us
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 106nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.2µs
Drain-source voltage: 1.5kV
Drain current: 12A
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
1+1529.21 грн
2+ 1053.15 грн
3+ 958.53 грн
IXTH12N65X2 IXTH12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
товар відсутній
IXTH12N70X2 IXTH12N70X2 IXYS IXTH12N70X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)
1+504.43 грн
3+ 348.34 грн
9+ 317.19 грн
IXTH130N20T IXTH130N20T IXYS IXTQ130N20T_IXTH130N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
IXTH140N075L2 IXTH140N075L2 IXYS IXTT140N075L2_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXTH140P05T IXTH140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)
1+722.49 грн
2+ 555 грн
6+ 504.9 грн
30+ 497.08 грн
IXTH140P10T IXTH140P10T IXYS IXT_140P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
1+1108.07 грн
3+ 1009.84 грн
510+ 935.07 грн
IXTH15N50L2 IXTH15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
кількість в упаковці: 1 шт
на замовлення 294 шт:
термін постачання 14-21 дні (днів)
1+897.5 грн
2+ 592.91 грн
5+ 539.66 грн
IXTH16N10D2 IXTH16N10D2 IXYS IXTH(T)16N10D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+1440.3 грн
2+ 992.69 грн
3+ 903.78 грн
IXTH16N20D2 IXTH16N20D2 IXYS IXTH(T)16N20D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 695W
Reverse recovery time: 607ns
Polarisation: unipolar
Kind of channel: depleted
Drain-source voltage: 200V
Drain current: 16A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTH16N50D2 IXTH16N50D2 IXYS IXTH(T)16N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
IXTH16P60P IXTH16P60P IXYS IXT_16P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 460W
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -16A
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 300 шт
товар відсутній
IXTH1N170DHV IXTH1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
товар відсутній
IXTH1N200P3 IXTH1N200P3 IXYS IXTA(H)1N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
IXTH1N200P3HV IXTH1N200P3HV IXYS IXTA(H)1N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
IXTH1N300P3HV IXTH1N300P3HV IXYS IXTH(T)1N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 1.8µs
Drain-source voltage: 3kV
Drain current: 1A
On-state resistance: 50Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXTH1N450HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n450hv_datasheet.pdf.pdf IXTH1N450HV THT N channel transistors
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
1+2755.67 грн
IXTH200N10T IXTH200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
1+682.25 грн
3+ 471.08 грн
7+ 428.43 грн
IXTH20N65X IXTH20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
кількість в упаковці: 1 шт
на замовлення 275 шт:
термін постачання 14-21 дні (днів)
1+756.18 грн
3+ 522.52 грн
6+ 476.22 грн
IXTH20N65X2 IXTH20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
кількість в упаковці: 1 шт
товар відсутній
IXTH20P50P IXTH20P50P IXYS IXT_20P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 406ns
кількість в упаковці: 1 шт
на замовлення 389 шт:
термін постачання 14-21 дні (днів)
1+878.78 грн
2+ 658.79 грн
5+ 598.76 грн
510+ 576.16 грн
IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
на замовлення 160 шт:
термін постачання 14-21 дні (днів)
1+1032.26 грн
2+ 801.37 грн
4+ 729.98 грн
10+ 729.11 грн
510+ 701.3 грн
IXTH24N50L IXTH24N50L IXYS IXTH24N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH24N65X2 IXTH24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 300 шт
товар відсутній
IXTH24P20 IXTH24P20 IXYS IXT_24P20.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO247-3; 250ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 300 шт
товар відсутній
IXTH260N055T2 IXTH260N055T2 IXYS IXTH260N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTH26N60P IXTH26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH26P20P IXTH26P20P IXYS IXT_26P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
кількість в упаковці: 1 шт
товар відсутній
IXTH270N04T4 IXTH270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)
1+386.51 грн
3+ 334.81 грн
4+ 253.75 грн
10+ 252.89 грн
11+ 239.85 грн
IXTH2N150L IXTH2N150L IXYS IXTH2N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2A; 290W; TO247-3; 1.86us
Drain-source voltage: 1.5kV
Drain current: 2A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 290W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 72nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.86µs
кількість в упаковці: 1 шт
товар відсутній
IXTH2N170D2 IXTH2N170D2 IXYS IXTH(T)2N170D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO247-3
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
товар відсутній
IXTH2N300P3HV IXTH2N300P3HV IXYS IXTH(T)2N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Mounting: THT
Case: TO247HV
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 520W
On-state resistance: 21Ω
Kind of package: tube
Drain current: 2A
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTH2R4N120P IXTH2R4N120P IXYS IXT_2R4N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Pulsed drain current: 6A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 920ns
кількість в упаковці: 1 шт
товар відсутній
IXTH300N04T2 IXTH300N04T2 IXYS IXTH300N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXTH30N50L2 IXTH30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH30N50P IXTH30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTH30N60L2 IXTH30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
кількість в упаковці: 1 шт
товар відсутній
IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 260 шт:
термін постачання 14-21 дні (днів)
1+597.08 грн
3+ 412.42 грн
7+ 375.42 грн
IXTH32P20T IXTH32P20T IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
кількість в упаковці: 1 шт
товар відсутній
IXTH340N04T4 IXTH340N04T4 IXYS IXTH(P)340N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
кількість в упаковці: 1 шт
товар відсутній
IXTH34N65X2 IXTH34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
IXTH360N055T2 IXTH360N055T2 IXYS IXTH(T)360N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 935W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTH36N50P IXTH36N50P IXYS IXTH(Q,T,V)36N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 300 шт
товар відсутній
IXTH36P10 IXYS 98908.pdf IXTH36P10 THT P channel transistors
товар відсутній
IXTH36P15P IXYS DS99791D(IXTA-P-H-Q36P15P).pdf IXTH36P15P THT P channel transistors
товар відсутній
IXTH38N30L2 IXTH38N30L2 IXYS IXTH38N30L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
IXTH3N100P IXTH3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
кількість в упаковці: 1 шт
на замовлення 261 шт:
термін постачання 14-21 дні (днів)
1+452.02 грн
3+ 392.56 грн
4+ 285.91 грн
10+ 270.27 грн
IXTH3N120 IXTH3N120 IXYS IXT_3N120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
кількість в упаковці: 1 шт
товар відсутній
IXTH3N150 IXTH3N150 IXYS IXTH3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTH3N200P3HV IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_3n200p3hv_datasheet.pdf.pdf IXTH3N200P3HV THT N channel transistors
товар відсутній
IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH420N04T2 IXTH420N04T2 IXYS IXTH420N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 74ns
кількість в упаковці: 1 шт
товар відсутній
IXTH440N055T2 IXTH440N055T2 IXYS IXTH(T)440N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
товар відсутній
IXTH44P15T IXTH44P15T IXYS IXT_44P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
на замовлення 146 шт:
термін постачання 14-21 дні (днів)
1+528.77 грн
3+ 407 грн
8+ 370.2 грн
30+ 364.12 грн
IXTH450P2 IXTH450P2 IXYS IXTH(P,Q)450P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 300 шт
товар відсутній
IXTH460P2 IXTH460P2 IXYS IXTQ460P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO247-3; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTH48N65X2 IXTH48N65X2 IXYS IXTH48N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTH12N100L IXTH12N100L.pdf
IXTH12N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXTH12N150 IXT_12N150.pdf
IXTH12N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO247-3; 1.2us
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 106nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.2µs
Drain-source voltage: 1.5kV
Drain current: 12A
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1529.21 грн
2+ 1053.15 грн
3+ 958.53 грн
IXTH12N65X2 IXT_12N65X2.pdf
IXTH12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
товар відсутній
IXTH12N70X2 IXTH12N70X2.pdf
IXTH12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+504.43 грн
3+ 348.34 грн
9+ 317.19 грн
IXTH130N20T IXTQ130N20T_IXTH130N20T.pdf
IXTH130N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
IXTH140N075L2 IXTT140N075L2_HV.pdf
IXTH140N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXTH140P05T IXT_140P05T.pdf
IXTH140P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+722.49 грн
2+ 555 грн
6+ 504.9 грн
30+ 497.08 грн
IXTH140P10T IXT_140P10T.pdf
IXTH140P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1108.07 грн
3+ 1009.84 грн
510+ 935.07 грн
IXTH15N50L2 IXTA(H,P)15N50L2.pdf
IXTH15N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
кількість в упаковці: 1 шт
на замовлення 294 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+897.5 грн
2+ 592.91 грн
5+ 539.66 грн
IXTH16N10D2 IXTH(T)16N10D2.pdf
IXTH16N10D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1440.3 грн
2+ 992.69 грн
3+ 903.78 грн
IXTH16N20D2 IXTH(T)16N20D2.pdf
IXTH16N20D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 695W
Reverse recovery time: 607ns
Polarisation: unipolar
Kind of channel: depleted
Drain-source voltage: 200V
Drain current: 16A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTH16N50D2 IXTH(T)16N50D2.pdf
IXTH16N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
IXTH16P60P IXT_16P60P.pdf
IXTH16P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 460W
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -16A
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 300 шт
товар відсутній
IXTH1N170DHV IXTA(H)1N170DHV.pdf
IXTH1N170DHV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
товар відсутній
IXTH1N200P3 IXTA(H)1N200P3HV.pdf
IXTH1N200P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
IXTH1N200P3HV IXTA(H)1N200P3HV.pdf
IXTH1N200P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
IXTH1N300P3HV IXTH(T)1N300P3HV.pdf
IXTH1N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 1.8µs
Drain-source voltage: 3kV
Drain current: 1A
On-state resistance: 50Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXTH1N450HV littelfuse_discrete_mosfets_n-channel_standard_ixt_1n450hv_datasheet.pdf.pdf
Виробник: IXYS
IXTH1N450HV THT N channel transistors
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2755.67 грн
IXTH200N10T IXTH(Q)200N10T.pdf
IXTH200N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+682.25 грн
3+ 471.08 грн
7+ 428.43 грн
IXTH20N65X IXTA(H,P)20N65X.pdf
IXTH20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
кількість в упаковці: 1 шт
на замовлення 275 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+756.18 грн
3+ 522.52 грн
6+ 476.22 грн
IXTH20N65X2 IXTA(H,P)20N65X2.pdf
IXTH20N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
кількість в упаковці: 1 шт
товар відсутній
IXTH20P50P IXT_20P50P.pdf
IXTH20P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 406ns
кількість в упаковці: 1 шт
на замовлення 389 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+878.78 грн
2+ 658.79 грн
5+ 598.76 грн
510+ 576.16 грн
IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
на замовлення 160 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1032.26 грн
2+ 801.37 грн
4+ 729.98 грн
10+ 729.11 грн
510+ 701.3 грн
IXTH24N50L IXTH24N50L.pdf
IXTH24N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH24N65X2 IXT_24N65X2.pdf
IXTH24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 300 шт
товар відсутній
IXTH24P20 IXT_24P20.pdf
IXTH24P20
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO247-3; 250ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 300 шт
товар відсутній
IXTH260N055T2 IXTH260N055T2.pdf
IXTH260N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTH26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTH26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH26P20P IXT_26P20P.pdf
IXTH26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
кількість в упаковці: 1 шт
товар відсутній
IXTH270N04T4 IXTH(P)270N04T4.pdf
IXTH270N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+386.51 грн
3+ 334.81 грн
4+ 253.75 грн
10+ 252.89 грн
11+ 239.85 грн
IXTH2N150L IXTH2N150L.pdf
IXTH2N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2A; 290W; TO247-3; 1.86us
Drain-source voltage: 1.5kV
Drain current: 2A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 290W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 72nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.86µs
кількість в упаковці: 1 шт
товар відсутній
IXTH2N170D2 IXTH(T)2N170D2.pdf
IXTH2N170D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO247-3
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
товар відсутній
IXTH2N300P3HV IXTH(T)2N300P3HV.pdf
IXTH2N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Mounting: THT
Case: TO247HV
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 520W
On-state resistance: 21Ω
Kind of package: tube
Drain current: 2A
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTH2R4N120P IXT_2R4N120P.pdf
IXTH2R4N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Pulsed drain current: 6A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 920ns
кількість в упаковці: 1 шт
товар відсутній
IXTH300N04T2 IXTH300N04T2.pdf
IXTH300N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXTH30N50L2 IXTH(Q,T)30N50L2.pdf
IXTH30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTH30N60L2 IXT_30N60L2.pdf
IXTH30N60L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
кількість в упаковці: 1 шт
товар відсутній
IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 260 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+597.08 грн
3+ 412.42 грн
7+ 375.42 грн
IXTH32P20T IXT_32P20T.pdf
IXTH32P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
кількість в упаковці: 1 шт
товар відсутній
IXTH340N04T4 IXTH(P)340N04T4.pdf
IXTH340N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
кількість в упаковці: 1 шт
товар відсутній
IXTH34N65X2 IXT_34N65X2.pdf
IXTH34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
IXTH360N055T2 IXTH(T)360N055T2.pdf
IXTH360N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 935W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTH36N50P IXTH(Q,T,V)36N50P_S.pdf
IXTH36N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 300 шт
товар відсутній
IXTH36P10 98908.pdf
Виробник: IXYS
IXTH36P10 THT P channel transistors
товар відсутній
IXTH36P15P DS99791D(IXTA-P-H-Q36P15P).pdf
Виробник: IXYS
IXTH36P15P THT P channel transistors
товар відсутній
IXTH38N30L2 IXTH38N30L2.pdf
IXTH38N30L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
IXTH3N100P IXTA(H,P)3N100P.pdf
IXTH3N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
кількість в упаковці: 1 шт
на замовлення 261 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+452.02 грн
3+ 392.56 грн
4+ 285.91 грн
10+ 270.27 грн
IXTH3N120 IXT_3N120.pdf
IXTH3N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
кількість в упаковці: 1 шт
товар відсутній
IXTH3N150 IXTH3N150.pdf
IXTH3N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTH3N200P3HV littelfuse_discrete_mosfets_n-channel_standard_ixt_3n200p3hv_datasheet.pdf.pdf
Виробник: IXYS
IXTH3N200P3HV THT N channel transistors
товар відсутній
IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTH420N04T2 IXTH420N04T2.pdf
IXTH420N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 74ns
кількість в упаковці: 1 шт
товар відсутній
IXTH440N055T2 IXTH(T)440N055T2.pdf
IXTH440N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
товар відсутній
IXTH44P15T IXT_44P15T.pdf
IXTH44P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
на замовлення 146 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+528.77 грн
3+ 407 грн
8+ 370.2 грн
30+ 364.12 грн
IXTH450P2 IXTH(P,Q)450P2.pdf
IXTH450P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 300 шт
товар відсутній
IXTH460P2 IXTQ460P2.pdf
IXTH460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO247-3; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTH48N65X2 IXTH48N65X2.pdf
IXTH48N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
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