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IXTK8N150L IXTK8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; TO264; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
товар відсутній
IXTK90N25L2 IXTK90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
кількість в упаковці: 1 шт
товар відсутній
IXTK90P20P IXTK90P20P IXYS IXTK90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Reverse recovery time: 315ns
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 14-21 дні (днів)
1+1380.41 грн
3+ 1258.91 грн
25+ 1188.82 грн
IXTL2N450 IXYS IXTL2N450.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Case: ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Drain current: 2A
Power dissipation: 220W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Gate charge: 180nC
Reverse recovery time: 1.75µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 20Ω
кількість в упаковці: 1 шт
товар відсутній
IXTL2N470 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtl2n470_datasheet.pdf.pdf IXTL2N470 THT N channel transistors
товар відсутній
IXTN102N65X2 IXTN102N65X2 IXYS IXTN102N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Technology: X2-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 204A
Semiconductor structure: single transistor
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 76A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
товар відсутній
IXTN110N20L2 IXTN110N20L2 IXYS IXTN110N20L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN120P20T IXTN120P20T IXYS IXTN120P20T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -106A
Pulsed drain current: -400A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN170P10P IXTN170P10P IXYS IXTN170P10P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -510A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 300 шт
товар відсутній
IXTN17N120L IXTN17N120L IXYS IXTN17N120L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN200N10L2 IXTN200N10L2 IXYS IXTN200N10L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 178A
Pulsed drain current: 500A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Gate charge: 540nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 245ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
1+3416.86 грн
20+ 3247 грн
100+ 3050.27 грн
IXTN200N10T IXTN200N10T IXYS IXTN200N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 550W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.5mΩ
Gate charge: 152nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 76ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN210P10T IXTN210P10T IXYS IXTN210P10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -210A
Pulsed drain current: -800A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
1+3531.97 грн
IXTN22N100L IXTN22N100L IXYS IXTN22N100L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.6Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 50A
Case: SOT227B
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN240N075L2 IXTN240N075L2 IXYS IXTN240N075L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 225A
Pulsed drain current: 720A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7mΩ
Gate charge: 546nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 206ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN30N100L IXTN30N100L IXYS IXTN30N100L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Gate charge: 545nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 70A
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Power dissipation: 800W
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN32P60P IXTN32P60P IXYS IXTN32P60P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -96A
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
IXTN40P50P IXTN40P50P IXYS IXTN40P50P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Pulsed drain current: -120A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 477ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN46N50L IXTN46N50L IXYS IXTN46N50L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN550N055T2 IXTN550N055T2 IXYS IXTN550N055T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 1.65kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 595nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN600N04T2 IXTN600N04T2 IXYS IXTN600N04T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Type of module: MOSFET transistor
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
IXTN60N50L2 IXTN60N50L2 IXYS IXTN60N50L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 500V
Drain current: 53A
On-state resistance: 0.1Ω
Power dissipation: 735W
Type of module: MOSFET transistor
Gate charge: 610nC
Technology: Linear L2™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 150A
Semiconductor structure: single transistor
Reverse recovery time: 980ns
кількість в упаковці: 1 шт
товар відсутній
IXTN62N50L IXTN62N50L IXYS IXTN62N50L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Pulsed drain current: 150A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 550nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN660N04T4 IXTN660N04T4 IXYS IXTN660N04T4.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA
Technology: TrenchT4™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 660A
Pulsed drain current: 1.8kA
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 0.85mΩ
Gate charge: 0.86µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 60ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN80N30L2 IXYS IXTN80N30L2 Transistor modules MOSFET
товар відсутній
IXTN8N150L IXTN8N150L IXYS IXTN8N150L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 7.5A
Pulsed drain current: 20A
Power dissipation: 545W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 3.6Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.7µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN90N25L2 IXTN90N25L2 IXYS IXTN90N25L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Gate charge: 640nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 266ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN90P20P IXTN90P20P IXYS IXTN90P20P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Pulsed drain current: -270A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 315ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
IXTP01N100D IXTP01N100D IXYS IXTP(Y)01N100D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Mounting: THT
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depleted
Case: TO220AB
Reverse recovery time: 2ns
кількість в упаковці: 1 шт
на замовлення 344 шт:
термін постачання 14-21 дні (днів)
1+534.38 грн
3+ 389.86 грн
8+ 355.43 грн
250+ 342.39 грн
IXTP02N120P IXTP02N120P IXYS IXTP(Y)02N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO220AB
On-state resistance: 75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
товар відсутній
IXTP02N50D IXTP02N50D IXYS IXTP02N50D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 5ns
кількість в упаковці: 1 шт
товар відсутній
IXTP05N100 IXTP05N100 IXYS IXTA(P)05N100_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Case: TO220AB
кількість в упаковці: 1 шт
товар відсутній
IXTP05N100M IXTP05N100M IXYS IXTP05N100M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.7A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
IXTP05N100P IXTP05N100P IXYS IXTP05N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.5A
On-state resistance: 30Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Case: TO220AB
кількість в упаковці: 1 шт
товар відсутній
IXTP06N120P IXTP06N120P IXYS IXTA(P)06N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTP08N100D2 IXTP08N100D2 IXYS IXTA(P,Y)08N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
кількість в упаковці: 1 шт
товар відсутній
IXTP08N100P IXTP08N100P IXYS IXTA(P,Y)08N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
2+170.33 грн
3+ 148.9 грн
9+ 112.97 грн
25+ 106.89 грн
250+ 105.15 грн
Мінімальне замовлення: 2
IXTP08N120P IXTP08N120P IXYS IXT_08N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 25Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
кількість в упаковці: 1 шт
товар відсутній
IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)
2+160.97 грн
3+ 139.88 грн
10+ 106.89 грн
26+ 100.81 грн
250+ 99.07 грн
Мінімальне замовлення: 2
IXTP102N15T IXTP102N15T IXYS IXTA(H,P,Q)102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
кількість в упаковці: 1 шт
товар відсутній
IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.74Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
2+258.3 грн
3+ 223.81 грн
6+ 172.07 грн
17+ 162.51 грн
Мінімальне замовлення: 2
IXTP10P15T IXTP10P15T IXYS IXT_10P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
2+217.12 грн
3+ 184.1 грн
7+ 160.77 грн
18+ 151.21 грн
50+ 149.47 грн
Мінімальне замовлення: 2
IXTP10P50P IXTP10P50P IXYS IXT_10P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
кількість в упаковці: 1 шт
товар відсутній
IXTP110N055T2 IXTP110N055T2 IXYS IXTA(P)110N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Mounting: THT
Case: TO220AB
Power dissipation: 180W
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 57nC
Kind of channel: enhanced
Reverse recovery time: 38ns
Drain-source voltage: 55V
Drain current: 110A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 14-21 дні (днів)
2+177.82 грн
3+ 154.32 грн
9+ 118.19 грн
24+ 111.23 грн
250+ 109.5 грн
Мінімальне замовлення: 2
IXTP120N04T2 IXTP120N04T2 IXYS IXTA(P)120N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
кількість в упаковці: 1 шт
товар відсутній
IXTP120N075T2 IXTP120N075T2 IXYS IXTA(P)120N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 7.7mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
товар відсутній
IXTP120P065T IXTP120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
на замовлення 338 шт:
термін постачання 14-21 дні (днів)
1+457.64 грн
3+ 397.08 грн
4+ 309.37 грн
10+ 292.86 грн
IXTP12N50P IXTP12N50P IXYS IXTA12N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+280.76 грн
3+ 218.39 грн
7+ 167.72 грн
17+ 159.03 грн
250+ 156.42 грн
IXTP12N65X2 IXTP12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
товар відсутній
IXTP12N65X2M IXTP12N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n65x2m_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTP12N70X2 IXTP12N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_12n70x2_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)
1+335.98 грн
3+ 291.49 грн
5+ 223.34 грн
13+ 211.17 грн
IXTP12N70X2M IXTP12N70X2M IXYS media?resourcetype=datasheets&itemid=4bb2c099-7b50-4035-add3-db2b7c47c846&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n70x2m_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
1+335.98 грн
3+ 291.49 грн
5+ 214.65 грн
13+ 203.35 грн
IXTP130N10T IXTP130N10T IXYS IXTA(P)130N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 67ns
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
2+246.13 грн
3+ 213.88 грн
7+ 168.59 грн
17+ 159.9 грн
Мінімальне замовлення: 2
IXTP130N15X4 IXTP130N15X4 IXYS IXTH(P)130N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
1+504.43 грн
3+ 348.34 грн
9+ 317.19 грн
IXTP140N055T2 IXTP140N055T2 IXYS IXTP140N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
кількість в упаковці: 1 шт
товар відсутній
IXTP140N12T2 IXTP140N12T2 IXYS IXTA(P)140N12T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
кількість в упаковці: 1 шт
товар відсутній
IXTP140P05T IXTP140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
товар відсутній
IXTP14N60P IXTP14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTP14N60PM IXTP14N60PM IXYS IXTP14N60PM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTK8N150L IXTK(X)8N150L.pdf
IXTK8N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; TO264; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Reverse recovery time: 1.7µs
кількість в упаковці: 1 шт
товар відсутній
IXTK90N25L2 IXTK(X)90N25L2.pdf
IXTK90N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
кількість в упаковці: 1 шт
товар відсутній
IXTK90P20P IXTK90P20P.pdf
IXTK90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Reverse recovery time: 315ns
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1380.41 грн
3+ 1258.91 грн
25+ 1188.82 грн
IXTL2N450 IXTL2N450.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Case: ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Drain current: 2A
Power dissipation: 220W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Gate charge: 180nC
Reverse recovery time: 1.75µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 20Ω
кількість в упаковці: 1 шт
товар відсутній
IXTL2N470 littelfuse_discrete_mosfets_n-channel_standard_ixtl2n470_datasheet.pdf.pdf
Виробник: IXYS
IXTL2N470 THT N channel transistors
товар відсутній
IXTN102N65X2 IXTN102N65X2.pdf
IXTN102N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Technology: X2-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 204A
Semiconductor structure: single transistor
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 76A
On-state resistance: 30mΩ
кількість в упаковці: 1 шт
товар відсутній
IXTN110N20L2 IXTN110N20L2.pdf
IXTN110N20L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 420ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN120P20T IXTN120P20T.pdf
IXTN120P20T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -106A
Pulsed drain current: -400A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN170P10P IXTN170P10P.pdf
IXTN170P10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -510A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Power dissipation: 890W
Polarisation: unipolar
кількість в упаковці: 300 шт
товар відсутній
IXTN17N120L IXTN17N120L.pdf
IXTN17N120L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN200N10L2 IXTN200N10L2.pdf
IXTN200N10L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 178A
Pulsed drain current: 500A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Gate charge: 540nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 245ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3416.86 грн
20+ 3247 грн
100+ 3050.27 грн
IXTN200N10T IXTN200N10T.pdf
IXTN200N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 500A
Power dissipation: 550W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.5mΩ
Gate charge: 152nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 76ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN210P10T IXTN210P10T.pdf
IXTN210P10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -210A
Pulsed drain current: -800A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3531.97 грн
IXTN22N100L IXTN22N100L.pdf
IXTN22N100L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.6Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 50A
Case: SOT227B
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN240N075L2 IXTN240N075L2.pdf
IXTN240N075L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 225A
Pulsed drain current: 720A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7mΩ
Gate charge: 546nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 206ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN30N100L IXTN30N100L.pdf
IXTN30N100L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Gate charge: 545nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 70A
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Power dissipation: 800W
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN32P60P IXTN32P60P.pdf
IXTN32P60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -96A
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
IXTN40P50P IXTN40P50P.pdf
IXTN40P50P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Pulsed drain current: -120A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 477ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN46N50L IXTN46N50L.pdf
IXTN46N50L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN550N055T2 IXTN550N055T2.pdf
IXTN550N055T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 1.65kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 595nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN600N04T2 IXTN600N04T2.pdf
IXTN600N04T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Type of module: MOSFET transistor
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
IXTN60N50L2 IXTN60N50L2.pdf
IXTN60N50L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 500V
Drain current: 53A
On-state resistance: 0.1Ω
Power dissipation: 735W
Type of module: MOSFET transistor
Gate charge: 610nC
Technology: Linear L2™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 150A
Semiconductor structure: single transistor
Reverse recovery time: 980ns
кількість в упаковці: 1 шт
товар відсутній
IXTN62N50L IXTN62N50L.pdf
IXTN62N50L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Pulsed drain current: 150A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 550nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN660N04T4 IXTN660N04T4.pdf
IXTN660N04T4
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA
Technology: TrenchT4™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 660A
Pulsed drain current: 1.8kA
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 0.85mΩ
Gate charge: 0.86µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 60ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN80N30L2
Виробник: IXYS
IXTN80N30L2 Transistor modules MOSFET
товар відсутній
IXTN8N150L IXTN8N150L.pdf
IXTN8N150L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 7.5A
Pulsed drain current: 20A
Power dissipation: 545W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 3.6Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.7µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN90N25L2 IXTN90N25L2.pdf
IXTN90N25L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Gate charge: 640nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 266ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXTN90P20P IXTN90P20P.pdf
IXTN90P20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Pulsed drain current: -270A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 315ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
IXTP01N100D IXTP(Y)01N100D.pdf
IXTP01N100D
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Mounting: THT
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depleted
Case: TO220AB
Reverse recovery time: 2ns
кількість в упаковці: 1 шт
на замовлення 344 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+534.38 грн
3+ 389.86 грн
8+ 355.43 грн
250+ 342.39 грн
IXTP02N120P IXTP(Y)02N120P.pdf
IXTP02N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO220AB
On-state resistance: 75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
товар відсутній
IXTP02N50D IXTP02N50D.pdf
IXTP02N50D
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 5ns
кількість в упаковці: 1 шт
товар відсутній
IXTP05N100 IXTA(P)05N100_HV.pdf
IXTP05N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Case: TO220AB
кількість в упаковці: 1 шт
товар відсутній
IXTP05N100M IXTP05N100M.pdf
IXTP05N100M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.7A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
IXTP05N100P IXTP05N100P.pdf
IXTP05N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.5A
On-state resistance: 30Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Case: TO220AB
кількість в упаковці: 1 шт
товар відсутній
IXTP06N120P IXTA(P)06N120P.pdf
IXTP06N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTP08N100D2 IXTA(P,Y)08N100D2.pdf
IXTP08N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
кількість в упаковці: 1 шт
товар відсутній
IXTP08N100P IXTA(P,Y)08N100P.pdf
IXTP08N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+170.33 грн
3+ 148.9 грн
9+ 112.97 грн
25+ 106.89 грн
250+ 105.15 грн
Мінімальне замовлення: 2
IXTP08N120P IXT_08N120P.pdf
IXTP08N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 25Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
кількість в упаковці: 1 шт
товар відсутній
IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+160.97 грн
3+ 139.88 грн
10+ 106.89 грн
26+ 100.81 грн
250+ 99.07 грн
Мінімальне замовлення: 2
IXTP102N15T IXTA(H,P,Q)102N15T.pdf
IXTP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
кількість в упаковці: 1 шт
товар відсутній
IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.74Ω
Type of transistor: N-MOSFET
Power dissipation: 200W
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+258.3 грн
3+ 223.81 грн
6+ 172.07 грн
17+ 162.51 грн
Мінімальне замовлення: 2
IXTP10P15T IXT_10P15T.pdf
IXTP10P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+217.12 грн
3+ 184.1 грн
7+ 160.77 грн
18+ 151.21 грн
50+ 149.47 грн
Мінімальне замовлення: 2
IXTP10P50P IXT_10P50P.pdf
IXTP10P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
кількість в упаковці: 1 шт
товар відсутній
IXTP110N055T2 IXTA(P)110N055T2.pdf
IXTP110N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Mounting: THT
Case: TO220AB
Power dissipation: 180W
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 57nC
Kind of channel: enhanced
Reverse recovery time: 38ns
Drain-source voltage: 55V
Drain current: 110A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+177.82 грн
3+ 154.32 грн
9+ 118.19 грн
24+ 111.23 грн
250+ 109.5 грн
Мінімальне замовлення: 2
IXTP120N04T2 IXTA(P)120N04T2.pdf
IXTP120N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
кількість в упаковці: 1 шт
товар відсутній
IXTP120N075T2 IXTA(P)120N075T2.pdf
IXTP120N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 7.7mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
товар відсутній
IXTP120P065T IXT_120P065T.pdf
IXTP120P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
на замовлення 338 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+457.64 грн
3+ 397.08 грн
4+ 309.37 грн
10+ 292.86 грн
IXTP12N50P IXTA12N50P-DTE.pdf
IXTP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+280.76 грн
3+ 218.39 грн
7+ 167.72 грн
17+ 159.03 грн
250+ 156.42 грн
IXTP12N65X2 IXT_12N65X2.pdf
IXTP12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
товар відсутній
IXTP12N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n65x2m_datasheet.pdf.pdf
IXTP12N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXTP12N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_12n70x2_datasheet.pdf.pdf
IXTP12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+335.98 грн
3+ 291.49 грн
5+ 223.34 грн
13+ 211.17 грн
IXTP12N70X2M media?resourcetype=datasheets&itemid=4bb2c099-7b50-4035-add3-db2b7c47c846&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp12n70x2m_datasheet.pdf
IXTP12N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+335.98 грн
3+ 291.49 грн
5+ 214.65 грн
13+ 203.35 грн
IXTP130N10T IXTA(P)130N10T.pdf
IXTP130N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 67ns
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+246.13 грн
3+ 213.88 грн
7+ 168.59 грн
17+ 159.9 грн
Мінімальне замовлення: 2
IXTP130N15X4 IXTH(P)130N15X4.pdf
IXTP130N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+504.43 грн
3+ 348.34 грн
9+ 317.19 грн
IXTP140N055T2 IXTP140N055T2.pdf
IXTP140N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
кількість в упаковці: 1 шт
товар відсутній
IXTP140N12T2 IXTA(P)140N12T2.pdf
IXTP140N12T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
кількість в упаковці: 1 шт
товар відсутній
IXTP140P05T IXT_140P05T.pdf
IXTP140P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
товар відсутній
IXTP14N60P IXTA(P,Q)14N60P.pdf
IXTP14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTP14N60PM IXTP14N60PM.pdf
IXTP14N60PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
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