IXTK17N120L IXYS
Виробник: IXYS
Description: MOSFET N-CH 1200V 17A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Description: MOSFET N-CH 1200V 17A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3101.27 грн |
10+ | 2661.19 грн |
100+ | 2335.84 грн |
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Технічний опис IXTK17N120L IXYS
Description: MOSFET N-CH 1200V 17A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V.
Інші пропозиції IXTK17N120L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTK17N120L | Виробник : Littelfuse | Trans MOSFET N-CH 1.2KV 17A 3-Pin(3+Tab) TO-264 |
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IXTK17N120L | Виробник : Littelfuse | Trans MOSFET N-CH 1.2KV 17A 3-Pin(3+Tab) TO-264 |
товар відсутній |
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IXTK17N120L | Виробник : Littelfuse | Trans MOSFET N-CH 1.2KV 17A 3-Pin(3+Tab) TO-264 |
товар відсутній |
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IXTK17N120L | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 700W Case: TO264 On-state resistance: 0.9Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.83µs кількість в упаковці: 1 шт |
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IXTK17N120L | Виробник : IXYS | MOSFET 17 Amps 1200V |
товар відсутній |
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IXTK17N120L | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 700W Case: TO264 On-state resistance: 0.9Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.83µs |
товар відсутній |