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IXTQ120N15P IXTQ120N15P IXYS IXTQ120N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
1+681.1 грн
3+ 477.65 грн
7+ 434.7 грн
IXTQ120N20P IXTQ120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
1+885.62 грн
2+ 699.29 грн
5+ 636.8 грн
30+ 612.41 грн
IXTQ130N20T IXTQ130N20T IXYS IXTQ130N20T_IXTH130N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)
1+748.65 грн
3+ 521.98 грн
6+ 474.77 грн
IXTQ140N10P IXTQ140N10P IXYS IXTQ140N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ14N60P IXTQ14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ150N15P IXTQ150N15P IXYS IXTK150N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+754.27 грн
IXTQ16N50P IXTQ16N50P IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+347.12 грн
3+ 300.34 грн
5+ 233.47 грн
13+ 221.27 грн
IXTQ170N10P IXTQ170N10P IXYS IXTK170N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+899.69 грн
2+ 624.21 грн
5+ 568.86 грн
IXTQ18N60P IXTQ18N60P IXYS IXTQ18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ200N10T IXTQ200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
1+543.19 грн
3+ 379.05 грн
8+ 344.97 грн
IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 190 шт:
термін постачання 14-21 дні (днів)
1+469.08 грн
4+ 288.58 грн
11+ 263.08 грн
510+ 259.6 грн
IXTQ22N60P IXTQ22N60P IXYS IXTQ22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ26N50P IXTQ26N50P IXYS IXTQ(T,V)26N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 301 шт:
термін постачання 14-21 дні (днів)
1+520.67 грн
3+ 405.28 грн
8+ 368.49 грн
30+ 358.04 грн
IXTQ26N60P IXTQ26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ26P20P IXTQ26P20P IXYS IXT_26P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N50L IXTQ30N50L IXYS IXTH(Q,T)30N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Features of semiconductor devices: linear power mosfet
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N50L2 IXTQ30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Features of semiconductor devices: linear power mosfet
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N50P IXTQ30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Features of semiconductor devices: standard power mosfet
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N60L2 IXTQ30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
1+748.65 грн
3+ 517.46 грн
6+ 471.29 грн
IXTQ32N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf IXTQ32N65X THT N channel transistors
товар відсутній
IXTQ34N65X2M IXTQ34N65X2M IXYS media?resourcetype=datasheets&itemid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
1+758.03 грн
2+ 521.98 грн
6+ 474.77 грн
IXTQ36N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n30p_datasheet.pdf.pdf IXTQ36N30P THT N channel transistors
товар відсутній
IXTQ36N50P IXTQ36N50P IXYS IXTH(Q,T,V)36N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 270 шт:
термін постачання 14-21 дні (днів)
1+1006.64 грн
2+ 696.58 грн
5+ 634.19 грн
IXTQ36P15P IXYS littelfuse_discrete_mosfets_p-channel_ixt_36p15p_datasheet.pdf.pdf IXTQ36P15P THT P channel transistors
товар відсутній
IXTQ3N150M IXTQ3N150M IXYS IXTQ3N150M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Drain-source voltage: 1.5kV
Drain current: 1.83A
On-state resistance: 7.3Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9A
Mounting: THT
Case: TO3PF
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ44N50P IXTQ44N50P IXYS IXTQ44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ44P15T IXYS littelfuse_discrete_mosfets_p-channel_ixt_44p15t_datasheet.pdf.pdf IXTQ44P15T THT P channel transistors
товар відсутній
IXTQ450P2 IXTQ450P2 IXYS IXTH(P,Q)450P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ460P2 IXTQ460P2 IXYS IXTQ460P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Gate charge: 48nC
Technology: Polar2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Reverse recovery time: 400ns
Drain-source voltage: 500V
кількість в упаковці: 1 шт
на замовлення 333 шт:
термін постачання 14-21 дні (днів)
1+466.26 грн
3+ 408.9 грн
4+ 324.06 грн
9+ 306.64 грн
30+ 294.45 грн
IXTQ470P2 IXTQ470P2 IXYS IXTQ470P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Drain current: 42A
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
кількість в упаковці: 1 шт
товар відсутній
IXTQ480P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq480p2_datasheet.pdf.pdf IXTQ480P2 THT N channel transistors
товар відсутній
IXTQ48N20T IXTQ48N20T IXYS IXTA(P,Q)48N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO3P; 130ns
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 250W
Reverse recovery time: 130ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 48A
On-state resistance: 50mΩ
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
1+334.92 грн
3+ 290.39 грн
5+ 211.69 грн
13+ 200.36 грн
IXTQ48N65X2M IXTQ48N65X2M IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)
1+926.89 грн
2+ 635.06 грн
3+ 610.67 грн
5+ 577.57 грн
IXTQ50N20P IXTQ50N20P IXYS IXTA50N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 276 шт:
термін постачання 14-21 дні (днів)
1+325.54 грн
3+ 278.63 грн
5+ 241.31 грн
10+ 240.44 грн
12+ 228.24 грн
30+ 223.88 грн
IXTQ50N25T IXTQ50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
кількість в упаковці: 300 шт
товар відсутній
IXTQ52N30P IXTQ52N30P IXYS IXTQ52N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Case: TO3P
Mounting: THT
Kind of package: tube
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Gate charge: 110nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
кількість в упаковці: 1 шт
на замовлення 217 шт:
термін постачання 14-21 дні (днів)
1+454.07 грн
3+ 354.62 грн
9+ 323.19 грн
30+ 312.74 грн
IXTQ52P10P IXTQ52P10P IXYS IXT_52P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTQ60N20L2 IXTQ60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ60N20T IXTQ60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
кількість в упаковці: 1 шт
товар відсутній
IXTQ62N15P IXTQ62N15P IXYS IXTA62N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ69N30P IXTQ69N30P IXYS IXTQ69N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Mounting: THT
Case: TO3P
Power dissipation: 500W
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTQ74N20P IXTQ74N20P IXYS IXTQ74N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO3P
Mounting: THT
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IXTQ75N10P IXTQ75N10P IXYS IXTA75N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ76N25T IXTQ76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+498.16 грн
3+ 432.42 грн
4+ 331.9 грн
9+ 313.61 грн
IXTQ82N25P IXTQ82N25P IXYS IXTK82N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 142nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 82A
On-state resistance: 38mΩ
кількість в упаковці: 1 шт
на замовлення 241 шт:
термін постачання 14-21 дні (днів)
1+685.79 грн
3+ 473.13 грн
7+ 431.21 грн
510+ 425.12 грн
IXTQ86N20T IXYS DS99664A(IXTA-TP-TQ86N20T).pdf IXTQ86N20T THT N channel transistors
товар відсутній
IXTQ88N30P IXTQ88N30P IXYS IXTH88N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ96N15P IXYS 99131.pdf IXTQ96N15P THT N channel transistors
товар відсутній
IXTQ96N20P IXTQ96N20P IXYS IXTH96N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)
1+647.32 грн
3+ 472.23 грн
7+ 429.47 грн
IXTQ96N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_96n25t_datasheet.pdf.pdf IXTQ96N25T THT N channel transistors
товар відсутній
IXTR102N65X2 IXTR102N65X2 IXYS IXTR102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTR120P20T IXTR120P20T IXYS IXTR120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 595W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
IXTR140P10T IXTR140P10T IXYS IXTR140P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
IXTR16P60P IXTR16P60P IXYS IXTR16P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTR170P10P IXTR170P10P IXYS IXTR170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -100A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 312W
Polarisation: unipolar
кількість в упаковці: 300 шт
товар відсутній
IXTR20P50P IXTR20P50P IXYS IXTR20P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -500V
Drain current: -13A
On-state resistance: 490mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 14-21 дні (днів)
1+1051.67 грн
2+ 809.66 грн
4+ 736.99 грн
30+ 730.02 грн
IXTR210P10T IXTR210P10T IXYS IXTR210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: ISOPLUS247™
Kind of package: tube
Power dissipation: 390W
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
1+2269.39 грн
2+ 2068.93 грн
30+ 1916.51 грн
IXTR32P60P IXTR32P60P IXYS IXTR32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -18A
On-state resistance: 0.385Ω
Type of transistor: P-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: ISOPLUS247™
кількість в упаковці: 1 шт
товар відсутній
IXTQ120N15P IXTQ120N15P-DTE.pdf
IXTQ120N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+681.1 грн
3+ 477.65 грн
7+ 434.7 грн
IXTQ120N20P IXTK120N20P-DTE.pdf
IXTQ120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+885.62 грн
2+ 699.29 грн
5+ 636.8 грн
30+ 612.41 грн
IXTQ130N20T IXTQ130N20T_IXTH130N20T.pdf
IXTQ130N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+748.65 грн
3+ 521.98 грн
6+ 474.77 грн
IXTQ140N10P IXTQ140N10P-DTE.pdf
IXTQ140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ14N60P IXTA(P,Q)14N60P.pdf
IXTQ14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ150N15P IXTK150N15P-DTE.pdf
IXTQ150N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+754.27 грн
IXTQ16N50P IXTP16N50P-DTE.pdf
IXTQ16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+347.12 грн
3+ 300.34 грн
5+ 233.47 грн
13+ 221.27 грн
IXTQ170N10P IXTK170N10P-DTE.pdf
IXTQ170N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+899.69 грн
2+ 624.21 грн
5+ 568.86 грн
IXTQ18N60P IXTQ18N60P.pdf
IXTQ18N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ200N10T IXTH(Q)200N10T.pdf
IXTQ200N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+543.19 грн
3+ 379.05 грн
8+ 344.97 грн
IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 190 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+469.08 грн
4+ 288.58 грн
11+ 263.08 грн
510+ 259.6 грн
IXTQ22N60P IXTQ22N60P.pdf
IXTQ22N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ26N50P IXTQ(T,V)26N50P_S.pdf
IXTQ26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 301 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+520.67 грн
3+ 405.28 грн
8+ 368.49 грн
30+ 358.04 грн
IXTQ26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTQ26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ26P20P IXT_26P20P.pdf
IXTQ26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N50L IXTH(Q,T)30N50L.pdf
IXTQ30N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Features of semiconductor devices: linear power mosfet
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N50L2 IXTH(Q,T)30N50L2.pdf
IXTQ30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Features of semiconductor devices: linear power mosfet
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTQ30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Features of semiconductor devices: standard power mosfet
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N60L2 IXT_30N60L2.pdf
IXTQ30N60L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+748.65 грн
3+ 517.46 грн
6+ 471.29 грн
IXTQ32N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf
Виробник: IXYS
IXTQ32N65X THT N channel transistors
товар відсутній
IXTQ34N65X2M media?resourcetype=datasheets&itemid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf
IXTQ34N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+758.03 грн
2+ 521.98 грн
6+ 474.77 грн
IXTQ36N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_36n30p_datasheet.pdf.pdf
Виробник: IXYS
IXTQ36N30P THT N channel transistors
товар відсутній
IXTQ36N50P IXTH(Q,T,V)36N50P_S.pdf
IXTQ36N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 270 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1006.64 грн
2+ 696.58 грн
5+ 634.19 грн
IXTQ36P15P littelfuse_discrete_mosfets_p-channel_ixt_36p15p_datasheet.pdf.pdf
Виробник: IXYS
IXTQ36P15P THT P channel transistors
товар відсутній
IXTQ3N150M IXTQ3N150M.pdf
IXTQ3N150M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Drain-source voltage: 1.5kV
Drain current: 1.83A
On-state resistance: 7.3Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9A
Mounting: THT
Case: TO3PF
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
IXTQ44N50P IXTQ44N50P.pdf
IXTQ44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ44P15T littelfuse_discrete_mosfets_p-channel_ixt_44p15t_datasheet.pdf.pdf
Виробник: IXYS
IXTQ44P15T THT P channel transistors
товар відсутній
IXTQ450P2 IXTH(P,Q)450P2.pdf
IXTQ450P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ460P2 IXTQ460P2.pdf
IXTQ460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Gate charge: 48nC
Technology: Polar2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Reverse recovery time: 400ns
Drain-source voltage: 500V
кількість в упаковці: 1 шт
на замовлення 333 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+466.26 грн
3+ 408.9 грн
4+ 324.06 грн
9+ 306.64 грн
30+ 294.45 грн
IXTQ470P2 IXTQ470P2.pdf
IXTQ470P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Drain current: 42A
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
кількість в упаковці: 1 шт
товар відсутній
IXTQ480P2 littelfuse_discrete_mosfets_n-channel_standard_ixtq480p2_datasheet.pdf.pdf
Виробник: IXYS
IXTQ480P2 THT N channel transistors
товар відсутній
IXTQ48N20T IXTA(P,Q)48N20T.pdf
IXTQ48N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO3P; 130ns
Case: TO3P
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 250W
Reverse recovery time: 130ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 48A
On-state resistance: 50mΩ
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+334.92 грн
3+ 290.39 грн
5+ 211.69 грн
13+ 200.36 грн
IXTQ48N65X2M
IXTQ48N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+926.89 грн
2+ 635.06 грн
3+ 610.67 грн
5+ 577.57 грн
IXTQ50N20P IXTA50N20P-DTE.pdf
IXTQ50N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
на замовлення 276 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+325.54 грн
3+ 278.63 грн
5+ 241.31 грн
10+ 240.44 грн
12+ 228.24 грн
30+ 223.88 грн
IXTQ50N25T IXTA(H,P,Q)50N25T.pdf
IXTQ50N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
кількість в упаковці: 300 шт
товар відсутній
IXTQ52N30P IXTQ52N30P-DTE.pdf
IXTQ52N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Case: TO3P
Mounting: THT
Kind of package: tube
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Gate charge: 110nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
кількість в упаковці: 1 шт
на замовлення 217 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+454.07 грн
3+ 354.62 грн
9+ 323.19 грн
30+ 312.74 грн
IXTQ52P10P IXT_52P10P.pdf
IXTQ52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTQ60N20L2 IXTH(T,Q)60N20L2.pdf
IXTQ60N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ60N20T IXTA(P,Q)60N20T.pdf
IXTQ60N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
кількість в упаковці: 1 шт
товар відсутній
IXTQ62N15P IXTA62N15P-DTE.pdf
IXTQ62N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ69N30P IXTQ69N30P-DTE.pdf
IXTQ69N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Mounting: THT
Case: TO3P
Power dissipation: 500W
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTQ74N20P IXTQ74N20P-DTE.pdf
IXTQ74N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO3P
Mounting: THT
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IXTQ75N10P IXTA75N10P-DTE.pdf
IXTQ75N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTQ76N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+498.16 грн
3+ 432.42 грн
4+ 331.9 грн
9+ 313.61 грн
IXTQ82N25P IXTK82N25P-DTE.pdf
IXTQ82N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 142nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 82A
On-state resistance: 38mΩ
кількість в упаковці: 1 шт
на замовлення 241 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+685.79 грн
3+ 473.13 грн
7+ 431.21 грн
510+ 425.12 грн
IXTQ86N20T DS99664A(IXTA-TP-TQ86N20T).pdf
Виробник: IXYS
IXTQ86N20T THT N channel transistors
товар відсутній
IXTQ88N30P IXTH88N30P-DTE.pdf
IXTQ88N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXTQ96N15P 99131.pdf
Виробник: IXYS
IXTQ96N15P THT N channel transistors
товар відсутній
IXTQ96N20P IXTH96N20P-DTE.pdf
IXTQ96N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+647.32 грн
3+ 472.23 грн
7+ 429.47 грн
IXTQ96N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_96n25t_datasheet.pdf.pdf
Виробник: IXYS
IXTQ96N25T THT N channel transistors
товар відсутній
IXTR102N65X2 IXTR102N65X2.pdf
IXTR102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXTR120P20T IXTR120P20T.pdf
IXTR120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 595W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
IXTR140P10T IXTR140P10T.pdf
IXTR140P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
IXTR16P60P IXTR16P60P.pdf
IXTR16P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IXTR170P10P IXTR170P10P.pdf
IXTR170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -100A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 312W
Polarisation: unipolar
кількість в упаковці: 300 шт
товар відсутній
IXTR20P50P IXTR20P50P.pdf
IXTR20P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -500V
Drain current: -13A
On-state resistance: 490mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1051.67 грн
2+ 809.66 грн
4+ 736.99 грн
30+ 730.02 грн
IXTR210P10T IXTR210P10T.pdf
IXTR210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: ISOPLUS247™
Kind of package: tube
Power dissipation: 390W
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2269.39 грн
2+ 2068.93 грн
30+ 1916.51 грн
IXTR32P60P IXTR32P60P.pdf
IXTR32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -18A
On-state resistance: 0.385Ω
Type of transistor: P-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: ISOPLUS247™
кількість в упаковці: 1 шт
товар відсутній
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