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IXTN120P20T IXYS
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Description: MOSFET P-CH 200V 106A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3630.84 грн |
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Технічний опис IXTN120P20T IXYS
Description: MOSFET P-CH 200V 106A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V.
Інші пропозиції IXTN120P20T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTN120P20T | Виробник : Littelfuse |
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товар відсутній |
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IXTN120P20T | Виробник : IXYS |
![]() Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -106A Pulsed drain current: -400A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±15V On-state resistance: 30mΩ Gate charge: 740nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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![]() |
IXTN120P20T | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXTN120P20T | Виробник : IXYS |
![]() Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -106A Pulsed drain current: -400A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±15V On-state resistance: 30mΩ Gate charge: 740nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |