| Фото | Назва | Виробник | Інформація |
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IXTA6N50D2 | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns Mounting: SMD Case: TO263 Kind of package: tube Kind of channel: depleted Reverse recovery time: 64ns Drain-source voltage: 500V Drain current: 6A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 290 шт: термін постачання 14-21 дні (днів) |
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IXTA70N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Power dissipation: 150W Case: TO263 On-state resistance: 12mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 48ns кількість в упаковці: 1 шт |
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IXTA75N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
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IXTA76N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO263 On-state resistance: 44mΩ Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns кількість в упаковці: 1 шт |
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IXTA76P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 25mΩ Mounting: SMD Gate charge: 197nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns кількість в упаковці: 1 шт |
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IXTA80N075L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO263 On-state resistance: 24mΩ Mounting: SMD Gate charge: 103nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns кількість в упаковці: 1 шт |
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IXTA80N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO263 On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns кількість в упаковці: 1 шт |
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IXTA80N12T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns Mounting: SMD On-state resistance: 17mΩ Reverse recovery time: 90ns Power dissipation: 325W Gate charge: 80nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 80A Kind of channel: enhanced Drain-source voltage: 120V Type of transistor: N-MOSFET Kind of package: tube Case: TO263 кількість в упаковці: 1 шт |
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| IXTA86N20T | IXYS |
IXTA86N20T SMD N channel transistors |
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IXTA8N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
на замовлення 56 шт: термін постачання 14-21 дні (днів) |
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IXTA8N70X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Power dissipation: 150W Case: TO263 On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXTA90N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 90A Power dissipation: 150W Case: TO263 On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 37ns кількість в упаковці: 1 шт |
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| IXTA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Pulsed drain current: 220A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 124ns кількість в упаковці: 1 шт |
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IXTA96P085T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 55ns кількість в упаковці: 1 шт |
на замовлення 289 шт: термін постачання 14-21 дні (днів) |
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| IXTB30N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Mounting: THT Polarisation: unipolar Kind of package: tube Case: PLUS264™ Features of semiconductor devices: linear power mosfet Gate charge: 545nC Kind of channel: enhanced Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 800W кількість в упаковці: 1 шт |
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IXTB62N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 62A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 550nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 14-21 дні (днів) |
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IXTF02N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 0.2A Power dissipation: 78W Case: ISOPLUS i4-pac™ x024c On-state resistance: 625Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs кількість в упаковці: 1 шт |
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| IXTF1N250 | IXYS |
IXTF1N250 THT N channel transistors |
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IXTF1R4N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 4.2A Power dissipation: 190W Case: ISOPLUS i4-pac™ x024c Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns кількість в упаковці: 1 шт |
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IXTF200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 156W Case: ISOPLUS i4-pac™ x024d On-state resistance: 7mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns кількість в упаковці: 1 шт |
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IXTF2N300P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W Case: ISOPLUS i4-pac™ x024c Mounting: THT Kind of package: tube Drain current: 1.6A On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 73nC Technology: Polar3™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A Reverse recovery time: 400ns Drain-source voltage: 3kV кількість в упаковці: 1 шт |
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IXTF6N200P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; 520ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 4A Power dissipation: 215W Case: ISOPLUS i4-pac™ x024c Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 520ns кількість в упаковці: 1 шт |
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IXTH02N250 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us Case: TO247-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 1.5µs Drain-source voltage: 2.5kV Drain current: 0.2A On-state resistance: 450Ω кількість в упаковці: 1 шт |
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IXTH02N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us Case: TO247HV Mounting: THT Kind of package: tube Drain current: 0.2A Power dissipation: 113W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 625Ω кількість в упаковці: 1 шт |
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IXTH04N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us Reverse recovery time: 1.1µs Drain-source voltage: 3kV Drain current: 0.4A On-state resistance: 190Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 13nC Kind of channel: enhanced Mounting: THT Case: TO247HV кількість в упаковці: 1 шт |
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IXTH05N250P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 0.33A Pulsed drain current: 1A Power dissipation: 104W Case: TO247HV Gate-source voltage: ±20V On-state resistance: 110Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.2µs кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 14-21 дні (днів) |
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IXTH06N220P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2.2kV Drain current: 0.38A Pulsed drain current: 1.2A Power dissipation: 104W Case: TO247HV Gate-source voltage: ±20V On-state resistance: 80Ω Mounting: THT Gate charge: 10.4nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.1µs кількість в упаковці: 1 шт |
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IXTH10N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO247-3 On-state resistance: 1.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 70ns кількість в упаковці: 1 шт |
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IXTH10P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 414ns кількість в упаковці: 1 шт |
на замовлення 280 шт: термін постачання 14-21 дні (днів) |
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IXTH10P60 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Power dissipation: 300W Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 0.5µs Drain-source voltage: -600V Drain current: -10A On-state resistance: 1Ω Type of transistor: P-MOSFET кількість в упаковці: 300 шт |
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IXTH110N10L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 600W Case: TO247-3 On-state resistance: 18mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 230ns кількість в упаковці: 1 шт |
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IXTH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 170ns кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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IXTH11P50 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs кількість в упаковці: 1 шт |
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IXTH120P065T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns кількість в упаковці: 1 шт |
на замовлення 138 шт: термін постачання 14-21 дні (днів) |
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IXTH12N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 400W Case: TO247-3 On-state resistance: 1.3Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs кількість в упаковці: 1 шт |
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IXTH12N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO247-3; 1.2us Drain-source voltage: 1.5kV Drain current: 12A Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 106nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 1.2µs кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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IXTH12N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 17.7nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 270ns кількість в упаковці: 1 шт |
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IXTH12N70X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 180W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 270ns кількість в упаковці: 1 шт |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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IXTH130N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Type of transistor: N-MOSFET Technology: Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Pulsed drain current: 320A Power dissipation: 830W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 150ns кількість в упаковці: 1 шт |
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IXTH140N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXTH140P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IXTH140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -140A Power dissipation: 568W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
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IXTH15N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 300W Case: TO247-3 On-state resistance: 0.48Ω Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 570ns кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IXTH16N10D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 830W Case: TO247-3 On-state resistance: 64mΩ Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 940ns кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXTH16N20D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns Mounting: THT Kind of package: tube Case: TO247-3 Power dissipation: 695W Reverse recovery time: 607ns Polarisation: unipolar Kind of channel: depleted Drain-source voltage: 200V Drain current: 16A On-state resistance: 80mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXTH16N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 130ns кількість в упаковці: 1 шт |
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IXTH16P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3 Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Power dissipation: 460W Gate charge: 92nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 440ns Drain-source voltage: -600V Drain current: -16A On-state resistance: 720mΩ Type of transistor: P-MOSFET кількість в упаковці: 300 шт |
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IXTH1N170DHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 1A Power dissipation: 290W Case: TO247HV On-state resistance: 16Ω Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 30ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTH1N200P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO247-3 On-state resistance: 40Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs кількість в упаковці: 1 шт |
товар відсутній |
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IXTH1N200P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO247HV On-state resistance: 40Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs кількість в упаковці: 1 шт |
товар відсутній |
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IXTH1N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us Case: TO247HV Mounting: THT Kind of package: tube Kind of channel: enhanced Reverse recovery time: 1.8µs Drain-source voltage: 3kV Drain current: 1A On-state resistance: 50Ω Type of transistor: N-MOSFET Power dissipation: 195W Polarisation: unipolar Features of semiconductor devices: standard power mosfet кількість в упаковці: 1 шт |
товар відсутній |
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| IXTH1N450HV | IXYS |
IXTH1N450HV THT N channel transistors |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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IXTH200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 550W Case: TO247-3 On-state resistance: 5.5mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
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IXTH20N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 320W Case: TO247-3 On-state resistance: 0.21Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 0.35µs кількість в упаковці: 1 шт |
на замовлення 275 шт: термін постачання 14-21 дні (днів) |
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IXTH20N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 290W Case: TO247-3 On-state resistance: 0.185Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 0.35µs кількість в упаковці: 1 шт |
товар відсутній |
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IXTH20P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -20A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 406ns кількість в упаковці: 1 шт |
на замовлення 389 шт: термін постачання 14-21 дні (днів) |
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IXTH22N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTH240N15X4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Power dissipation: 940W Case: TO247-3 On-state resistance: 4.4mΩ Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 130ns кількість в упаковці: 1 шт |
на замовлення 160 шт: термін постачання 14-21 дні (днів) |
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IXTH24N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs кількість в упаковці: 1 шт |
товар відсутній |
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IXTH24N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns кількість в упаковці: 300 шт |
товар відсутній |
| IXTA6N50D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Mounting: SMD
Case: TO263
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
Drain-source voltage: 500V
Drain current: 6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Mounting: SMD
Case: TO263
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
Drain-source voltage: 500V
Drain current: 6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 290 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 771.16 грн |
| 2+ | 534.65 грн |
| 6+ | 486.97 грн |
| IXTA70N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA75N10P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA76N25T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA76P10T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA80N075L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA80N10T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA80N12T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
кількість в упаковці: 1 шт
товар відсутній
| IXTA8N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 56 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.26 грн |
| 3+ | 165.55 грн |
| 8+ | 145.48 грн |
| 10+ | 142.87 грн |
| 20+ | 137.64 грн |
| 50+ | 133.28 грн |
| IXTA8N70X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA90N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA90N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 124ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 124ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA96P085T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
кількість в упаковці: 1 шт
на замовлення 289 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 496.28 грн |
| 3+ | 412.52 грн |
| 4+ | 317.1 грн |
| 9+ | 299.67 грн |
| IXTB30N100L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Features of semiconductor devices: linear power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Features of semiconductor devices: linear power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
кількість в упаковці: 1 шт
товар відсутній
| IXTB62N50L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4189.79 грн |
| 25+ | 3970.49 грн |
| IXTF02N450 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 0.2A
Power dissipation: 78W
Case: ISOPLUS i4-pac™ x024c
On-state resistance: 625Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
кількість в упаковці: 1 шт
товар відсутній
| IXTF1R4N450 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 4.2A
Power dissipation: 190W
Case: ISOPLUS i4-pac™ x024c
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 4.2A
Power dissipation: 190W
Case: ISOPLUS i4-pac™ x024c
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
кількість в упаковці: 1 шт
товар відсутній
| IXTF200N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 156W
Case: ISOPLUS i4-pac™ x024d
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 156W
Case: ISOPLUS i4-pac™ x024d
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
товар відсутній
| IXTF2N300P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Kind of package: tube
Drain current: 1.6A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Technology: Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Reverse recovery time: 400ns
Drain-source voltage: 3kV
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Kind of package: tube
Drain current: 1.6A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Technology: Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Reverse recovery time: 400ns
Drain-source voltage: 3kV
кількість в упаковці: 1 шт
товар відсутній
| IXTF6N200P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; 520ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 4A
Power dissipation: 215W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 520ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; 520ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 4A
Power dissipation: 215W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 520ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH02N250 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
кількість в упаковці: 1 шт
товар відсутній
| IXTH02N450HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
кількість в упаковці: 1 шт
товар відсутній
| IXTH04N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhanced
Mounting: THT
Case: TO247HV
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhanced
Mounting: THT
Case: TO247HV
кількість в упаковці: 1 шт
товар відсутній
| IXTH05N250P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.33A
Pulsed drain current: 1A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 110Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.33A
Pulsed drain current: 1A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 110Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 985.06 грн |
| 2+ | 801.52 грн |
| 3+ | 770.96 грн |
| 4+ | 729.15 грн |
| IXTH06N220P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.2kV
Drain current: 0.38A
Pulsed drain current: 1.2A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 80Ω
Mounting: THT
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.2kV
Drain current: 0.38A
Pulsed drain current: 1.2A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 80Ω
Mounting: THT
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
кількість в упаковці: 1 шт
товар відсутній
| IXTH10N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH10P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
кількість в упаковці: 1 шт
на замовлення 280 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 646.39 грн |
| 3+ | 424.28 грн |
| 7+ | 385.92 грн |
| IXTH10P60 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 300W
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
кількість в упаковці: 300 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 300W
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
кількість в упаковці: 300 шт
товар відсутній
| IXTH110N10L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH110N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 170ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 170ns
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 700.8 грн |
| 2+ | 511.13 грн |
| 6+ | 465.19 грн |
| IXTH11P50 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
| IXTH120P065T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
на замовлення 138 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 585.41 грн |
| 3+ | 410.71 грн |
| 8+ | 373.72 грн |
| IXTH12N100L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
кількість в упаковці: 1 шт
товар відсутній
| IXTH12N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO247-3; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 106nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.2µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO247-3; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 106nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.2µs
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1097.64 грн |
| 3+ | 1000.54 грн |
| IXTH12N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH12N70X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 505.66 грн |
| 3+ | 349.19 грн |
| 9+ | 317.97 грн |
| IXTH130N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH140N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH140P05T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 724.25 грн |
| 2+ | 556.36 грн |
| 6+ | 506.13 грн |
| 30+ | 498.29 грн |
| IXTH140P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1110.77 грн |
| 3+ | 1012.3 грн |
| 510+ | 937.35 грн |
| IXTH15N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 899.69 грн |
| 2+ | 603.4 грн |
| 5+ | 549.69 грн |
| 300+ | 547.95 грн |
| IXTH16N10D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO247-3; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 64mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1443.82 грн |
| 2+ | 989.68 грн |
| 3+ | 900.76 грн |
| IXTH16N20D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 695W
Reverse recovery time: 607ns
Polarisation: unipolar
Kind of channel: depleted
Drain-source voltage: 200V
Drain current: 16A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 695W
Reverse recovery time: 607ns
Polarisation: unipolar
Kind of channel: depleted
Drain-source voltage: 200V
Drain current: 16A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXTH16N50D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH16P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 460W
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -16A
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 300 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 460W
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -16A
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 300 шт
товар відсутній
| IXTH1N170DHV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH1N200P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
| IXTH1N200P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
| IXTH1N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 1.8µs
Drain-source voltage: 3kV
Drain current: 1A
On-state resistance: 50Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 1.8µs
Drain-source voltage: 3kV
Drain current: 1A
On-state resistance: 50Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXTH1N450HV |
|
Виробник: IXYS
IXTH1N450HV THT N channel transistors
IXTH1N450HV THT N channel transistors
на замовлення 29 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2762.39 грн |
| IXTH200N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 683.91 грн |
| 3+ | 472.23 грн |
| 7+ | 429.47 грн |
| IXTH20N65X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
кількість в упаковці: 1 шт
на замовлення 275 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 758.03 грн |
| 3+ | 523.79 грн |
| 6+ | 477.39 грн |
| IXTH20N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
кількість в упаковці: 1 шт
товар відсутній
| IXTH20P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 406ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 406ns
кількість в упаковці: 1 шт
на замовлення 389 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 880.92 грн |
| 2+ | 660.39 грн |
| 5+ | 600.22 грн |
| 510+ | 577.57 грн |
| IXTH22N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
| IXTH240N15X4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
на замовлення 160 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1034.78 грн |
| 2+ | 803.33 грн |
| 4+ | 731.76 грн |
| 10+ | 730.89 грн |
| 510+ | 703.01 грн |
| IXTH24N50L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
| IXTH24N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 300 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 300 шт
товар відсутній