IXTK120N20P IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 180ns
Power dissipation: 714W
Polarisation: unipolar
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 180ns
Power dissipation: 714W
Polarisation: unipolar
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
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Технічний опис IXTK120N20P IXYS
Description: MOSFET N-CH 200V 120A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Power Dissipation (Max): 714W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Інші пропозиції IXTK120N20P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTK120N20P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 200V 120A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
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IXTK120N20P | Виробник : IXYS | MOSFETs 120 Amps 200V 0.022 Rds |
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IXTK120N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264 Case: TO264 Mounting: THT Kind of package: tube Drain-source voltage: 200V Drain current: 120A On-state resistance: 22mΩ Type of transistor: N-MOSFET Reverse recovery time: 180ns Power dissipation: 714W Polarisation: unipolar Gate charge: 152nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |