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IXTH96N25T Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_96n25t_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 250V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
300+ | 323.2 грн |
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Технічний опис IXTH96N25T Littelfuse Inc.
Description: MOSFET N-CH 250V 96A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V.
Інші пропозиції IXTH96N25T за ціною від 357.17 грн до 568.52 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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IXTH96N25T | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Power dissipation: 625W Case: TO247-3 On-state resistance: 29mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 158ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXTH96N25T | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Power dissipation: 625W Case: TO247-3 On-state resistance: 29mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 158ns кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXTH96N25T | Виробник : IXYS |
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