| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IXGT10N170A | IXYS |
 IXGT10N170A SMD IGBT transistors |
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IXGT16N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268 Mounting: SMD Pulsed collector current: 80A Type of transistor: IGBT Turn-on time: 90ns Kind of package: tube Case: TO268 Turn-off time: 1.6µs Gate-emitter voltage: ±20V Collector current: 16A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 78nC Technology: NPT Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGT16N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Mounting: SMD Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 35ns Kind of package: tube Case: TO268 Turn-off time: 298ns Gate-emitter voltage: ±20V Collector current: 11A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 70nC Technology: NPT Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGT16N170AH1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Mounting: SMD Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 35ns Kind of package: tube Case: TO268 Turn-off time: 298ns Gate-emitter voltage: ±20V Collector current: 11A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 70nC Technology: NPT Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGT24N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Kind of package: tube Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 106nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 150A Type of transistor: IGBT Turn-on time: 105ns Case: TO268 Turn-off time: 560ns Gate-emitter voltage: ±20V Collector current: 24A Mounting: SMD кількість в упаковці: 1 шт |
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IXGT24N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Kind of package: tube Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 0.14µC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 54ns Case: TO268 Turn-off time: 456ns Gate-emitter voltage: ±20V Collector current: 24A Mounting: SMD кількість в упаковці: 1 шт |
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IXGT25N160 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.6kV Collector current: 25A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 84nC Kind of package: tube Turn-on time: 283ns Turn-off time: 526ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGT30N120B3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns кількість в упаковці: 1 шт |
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IXGT32N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Type of transistor: IGBT Turn-off time: 1.38s Turn-on time: 239ns Pulsed collector current: 230A Collector current: 32A Gate charge: 89nC Gate-emitter voltage: ±20V Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Power dissipation: 300W кількість в упаковці: 1 шт |
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IXGT32N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGT32N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: SMD Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGT60N60C3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 380W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 115nC Kind of package: tube Turn-on time: 54ns Turn-off time: 198ns кількість в упаковці: 1 шт |
на замовлення 21 шт: термін постачання 14-21 дні (днів) |
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| IXGT6N170 | IXYS |
IXGT6N170 SMD IGBT transistors |
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| IXGT6N170A | IXYS |
IXGT6N170A SMD IGBT transistors |
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| IXGT6N170AHV | IXYS |
IXGT6N170AHV SMD IGBT transistors |
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IXGT72N60A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268 Type of transistor: IGBT Technology: GenX3™ Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: SMD Gate charge: 230nC Kind of package: tube Turn-on time: 61ns Turn-off time: 885ns кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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IXGX100N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 100A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 285ns Turn-off time: 720ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGX120N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns кількість в упаковці: 1 шт |
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IXGX120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 122ns Turn-off time: 885ns кількість в упаковці: 1 шт |
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IXGX120N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 780W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 450nC Kind of package: tube Turn-on time: 123ns Turn-off time: 830ns кількість в упаковці: 1 шт |
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IXGX320N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 320A Power dissipation: 1.7kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mounting: THT Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns кількість в упаковці: 1 шт |
на замовлення 17 шт: термін постачання 14-21 дні (днів) |
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IXGX50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Gate charge: 196nC Technology: GenX3™; PT Kind of package: tube Mounting: THT Case: PLUS247™ кількість в упаковці: 1 шт |
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IXGX55N120A3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 55A Power dissipation: 460W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns кількість в упаковці: 1 шт |
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IXGX72N60A3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 63ns Turn-off time: 885ns кількість в упаковці: 1 шт |
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IXGX72N60C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns кількість в упаковці: 1 шт |
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IXGX82N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs кількість в упаковці: 1 шт |
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IXGX82N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns кількість в упаковці: 1 шт |
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IXHH40N150HV | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA Mounting: THT Kind of package: tube Max. off-state voltage: 1.5kV Max. forward impulse current: 7.6kA Case: TO247HV Features of semiconductor devices: MOS-gated thyristor (MGT) Type of thyristor: thyristor кількість в упаковці: 1 шт |
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IXHX40N150V1HV | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA Mounting: THT Case: TO247PLUS-HV Kind of package: tube Max. forward impulse current: 7.6kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) Type of thyristor: thyristor Max. off-state voltage: 1.5kV кількість в упаковці: 1 шт |
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| IXKC15N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns кількість в упаковці: 1 шт |
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| IXKC19N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 430ns кількість в упаковці: 1 шт |
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IXKC23N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 147W Case: ISOPLUS220™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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| IXKC25N80C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 550ns кількість в упаковці: 1 шт |
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| IXKC40N60C | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 800ns кількість в упаковці: 1 шт |
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IXKF40N60SCD1 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 41A; ISOPLUS i4-pac™ x024a Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 41A Case: ISOPLUS i4-pac™ x024a On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXKH20N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO247-3 On-state resistance: 0.2Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
на замовлення 239 шт: термін постачання 14-21 дні (днів) |
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IXKH24N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 250W Case: TO247-3 On-state resistance: 0.165Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXKH30N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 310W Case: TO247-3 On-state resistance: 0.125Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXKH35N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Power dissipation: 357W Case: TO247-3 On-state resistance: 0.1Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXKH47N60C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXKH70N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70A Power dissipation: 625W Case: TO247-3 On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXKK85N60C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 85A Power dissipation: 694W Case: TO264 On-state resistance: 36mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXKN40N60C | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 290W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 70mΩ Gate charge: 250nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 650ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXKN45N80C | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 380W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 74mΩ Gate charge: 360nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 800ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXKN75N60C | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 250A Power dissipation: 560W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 36mΩ Gate charge: 500nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 580ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXKP20N60C5M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 340ns кількість в упаковці: 1 шт |
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IXKP24N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 250W Case: TO220AB On-state resistance: 0.165Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXKP24N60C5M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns кількість в упаковці: 1 шт |
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IXKR25N80C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™ Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Power dissipation: 250W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXKR40N60C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 280W Case: ISOPLUS247™ On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos Reverse recovery time: 650ns кількість в упаковці: 1 шт |
товар відсутній |
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IXKR47N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 278W Case: ISOPLUS247™ On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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IXKT70N60C5 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 540W Case: TO268 On-state resistance: 45mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos кількість в упаковці: 1 шт |
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IXLF19N250A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 19A Power dissipation: 250W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 70A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 0.1µs Turn-off time: 0.6µs Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXTA02N250HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us Case: TO263 Mounting: SMD Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 1.5µs Drain-source voltage: 2.5kV Drain current: 0.2A On-state resistance: 450Ω кількість в упаковці: 1 шт |
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IXTA05N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns Mounting: SMD Kind of package: tube Polarisation: unipolar Reverse recovery time: 710ns Drain-source voltage: 1kV Drain current: 0.75A On-state resistance: 17Ω Type of transistor: N-MOSFET Power dissipation: 40W Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Case: TO263 кількість в упаковці: 1 шт |
товар відсутній |
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IXTA05N100HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: TO263HV On-state resistance: 17Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 710ns кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IXTA06N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.6A Power dissipation: 42W Case: TO263 On-state resistance: 34Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTA08N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 21Ω Mounting: SMD Gate charge: 325nC Kind of package: tube Kind of channel: depleted кількість в упаковці: 1 шт |
на замовлення 184 шт: термін постачання 14-21 дні (днів) |
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IXTA08N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO263HV On-state resistance: 21Ω Mounting: SMD Gate charge: 325nC Kind of package: tube Kind of channel: depleted кількість в упаковці: 1 шт |
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IXTA08N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 42W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 0.8A On-state resistance: 20Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
| IXGT16N170 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Mounting: SMD
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO268
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Mounting: SMD
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO268
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXGT16N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXGT16N170AH1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXGT24N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 106nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 105ns
Case: TO268
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 106nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 105ns
Case: TO268
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| IXGT24N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 54ns
Case: TO268
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 54ns
Case: TO268
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| IXGT25N160 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXGT30N120B3D1 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
товар відсутній
| IXGT32N120A3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Type of transistor: IGBT
Turn-off time: 1.38s
Turn-on time: 239ns
Pulsed collector current: 230A
Collector current: 32A
Gate charge: 89nC
Gate-emitter voltage: ±20V
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Type of transistor: IGBT
Turn-off time: 1.38s
Turn-on time: 239ns
Pulsed collector current: 230A
Collector current: 32A
Gate charge: 89nC
Gate-emitter voltage: ±20V
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
кількість в упаковці: 1 шт
товар відсутній
| IXGT32N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXGT32N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXGT60N60C3D1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 526.89 грн |
| 3+ | 405.2 грн |
| 8+ | 369.33 грн |
| 30+ | 363.25 грн |
| IXGT72N60A3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 968.62 грн |
| 2+ | 667.81 грн |
| 3+ | 642.21 грн |
| 5+ | 607.45 грн |
| IXGX100N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXGX120N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
кількість в упаковці: 1 шт
товар відсутній
| IXGX120N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
товар відсутній
| IXGX120N60A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
кількість в упаковці: 1 шт
товар відсутній
| IXGX320N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1806.23 грн |
| 2+ | 1646.96 грн |
| 30+ | 1560.76 грн |
| IXGX50N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: PLUS247™
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: PLUS247™
кількість в упаковці: 1 шт
товар відсутній
| IXGX55N120A3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
товар відсутній
| IXGX72N60A3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
товар відсутній
| IXGX72N60C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
товар відсутній
| IXGX82N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
кількість в упаковці: 1 шт
товар відсутній
| IXGX82N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
кількість в упаковці: 1 шт
товар відсутній
| IXHH40N150HV |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
Case: TO247HV
Features of semiconductor devices: MOS-gated thyristor (MGT)
Type of thyristor: thyristor
кількість в упаковці: 1 шт
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
Case: TO247HV
Features of semiconductor devices: MOS-gated thyristor (MGT)
Type of thyristor: thyristor
кількість в упаковці: 1 шт
товар відсутній
| IXHX40N150V1HV |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Mounting: THT
Case: TO247PLUS-HV
Kind of package: tube
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
кількість в упаковці: 1 шт
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Mounting: THT
Case: TO247PLUS-HV
Kind of package: tube
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
кількість в упаковці: 1 шт
товар відсутній
| IXKC15N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
| IXKC19N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 430ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 430ns
кількість в упаковці: 1 шт
товар відсутній
| IXKC23N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKC25N80C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 550ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 550ns
кількість в упаковці: 1 шт
товар відсутній
| IXKC40N60C | |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 800ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 800ns
кількість в упаковці: 1 шт
товар відсутній
| IXKF40N60SCD1 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKH20N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
на замовлення 239 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 561.52 грн |
| 3+ | 388.05 грн |
| 8+ | 353.69 грн |
| IXKH24N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKH30N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 310W
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 310W
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKH35N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKH47N60C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKH70N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKK85N60C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKN40N60C |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXKN45N80C |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 800ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 800ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXKN75N60C |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 580ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 580ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXKP20N60C5M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 340ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 340ns
кількість в упаковці: 1 шт
товар відсутній
| IXKP24N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXKP24N60C5M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
кількість в упаковці: 1 шт
товар відсутній
| IXKR25N80C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXKR40N60C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Reverse recovery time: 650ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Reverse recovery time: 650ns
кількість в упаковці: 1 шт
товар відсутній
| IXKR47N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1627.48 грн |
| 2+ | 1483.62 грн |
| IXKT70N60C5 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
товар відсутній
| IXLF19N250A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 19A; 250W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 19A
Power dissipation: 250W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXTA02N250HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
кількість в упаковці: 1 шт
товар відсутній
| IXTA05N100 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Case: TO263
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Case: TO263
кількість в упаковці: 1 шт
товар відсутній
| IXTA05N100HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 322.88 грн |
| 3+ | 280.66 грн |
| 5+ | 214.65 грн |
| 13+ | 203.35 грн |
| IXTA06N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
| IXTA08N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
кількість в упаковці: 1 шт
на замовлення 184 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.16 грн |
| 3+ | 138.98 грн |
| 10+ | 106.89 грн |
| 26+ | 100.81 грн |
| IXTA08N100D2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263HV
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263HV
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
кількість в упаковці: 1 шт
товар відсутній
| IXTA08N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній