![IXTN200N10T IXTN200N10T](https://www.mouser.com/images/littelfuse/lrg/ixtn200n10t_SPL.jpg)
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2970.2 грн |
10+ | 2601.57 грн |
100+ | 1979.28 грн |
500+ | 1860.4 грн |
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Технічний опис IXTN200N10T IXYS
Description: MOSFET N-CH 100V 200A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Power Dissipation (Max): 550W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V.
Інші пропозиції IXTN200N10T за ціною від 3017.93 грн до 3017.93 грн
Фото | Назва | Виробник | Інформація |
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IXTN200N10T | Виробник : IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 550W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IXTN200N10T | Виробник : Littelfuse |
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товар відсутній |
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IXTN200N10T | Виробник : IXYS |
![]() Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 500A Power dissipation: 550W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 5.5mΩ Gate charge: 152nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 76ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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IXTN200N10T | Виробник : IXYS |
![]() Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 500A Power dissipation: 550W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 5.5mΩ Gate charge: 152nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 76ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |