Фото | Назва | Виробник | Інформація |
Доступність |
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IXGH30N120B3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns кількість в упаковці: 1 шт |
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IXGH30N120C3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 60ns Turn-off time: 415ns кількість в упаковці: 1 шт |
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IXGH32N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 32A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 230A Mounting: THT Gate charge: 89nC Kind of package: tube Turn-on time: 239ns Turn-off time: 1.38µs кількість в упаковці: 1 шт |
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IXGH32N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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IXGH32N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH36N60B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 45ns Turn-off time: 350ns кількість в упаковці: 1 шт |
на замовлення 284 шт: термін постачання 14-21 дні (днів) |
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IXGH36N60B3C1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 47ns Turn-off time: 350ns кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXGH40N120A2 | IXYS |
![]() Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3 Type of transistor: IGBT Technology: PT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 360W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 136nC Kind of package: tube Turn-on time: 55ns Turn-off time: 2.3µs кількість в упаковці: 1 шт |
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IXGH40N120B2D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 138nC Kind of package: tube Turn-on time: 79ns Turn-off time: 770ns кількість в упаковці: 1 шт |
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IXGH40N120C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 52ns Turn-off time: 475ns кількість в упаковці: 1 шт |
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IXGH40N120C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 52ns Turn-off time: 475ns кількість в упаковці: 1 шт |
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IXGH48N60A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns кількість в упаковці: 1 шт |
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IXGH48N60A3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns кількість в упаковці: 1 шт |
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IXGH48N60B3C1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 280A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 48ns Turn-off time: 347ns кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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IXGH48N60B3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 280A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 44ns Turn-off time: 347ns кількість в упаковці: 1 шт |
на замовлення 77 шт: термін постачання 14-21 дні (днів) |
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IXGH48N60C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 45ns Turn-off time: 187ns кількість в упаковці: 1 шт |
на замовлення 301 шт: термін постачання 14-21 дні (днів) |
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IXGH4N250C | IXYS |
![]() Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage Mounting: THT Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 57nC Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 8A Turn-off time: 350ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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IXGH50N120C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 460W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 55ns Turn-off time: 485ns кількість в упаковці: 1 шт |
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IXGH50N90B2 | IXYS |
![]() Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3 Type of transistor: IGBT Technology: HiPerFAST™; XPT™ Collector-emitter voltage: 900V Collector current: 50A Power dissipation: 400W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 135nC Kind of package: tube Turn-on time: 48ns Turn-off time: 820ns кількість в упаковці: 1 шт |
на замовлення 179 шт: термін постачання 14-21 дні (днів) |
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IXGH50N90B2D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3 Type of transistor: IGBT Technology: GenX3™; HiPerFAST™; PT Collector-emitter voltage: 900V Collector current: 50A Power dissipation: 400W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 135nC Kind of package: tube Turn-on time: 48ns Turn-off time: 820ns кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IXGH60N60C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 54ns Turn-off time: 198ns кількість в упаковці: 1 шт |
на замовлення 353 шт: термін постачання 14-21 дні (днів) |
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IXGH6N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 6A Power dissipation: 75W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 20nC Kind of package: tube Turn-on time: 85ns Turn-off time: 0.6µs Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH6N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 6A Power dissipation: 75W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 14A Mounting: THT Gate charge: 18.5nC Kind of package: tube Turn-on time: 91ns Turn-off time: 271ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH72N60A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 61ns Turn-off time: 885ns кількість в упаковці: 1 шт |
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IXGH72N60C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns кількість в упаковці: 1 шт |
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IXGH90N60B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247 Type of transistor: IGBT Technology: GenX3™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 660W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 172nC Kind of package: tube Turn-on time: 29ns Turn-off time: 220ns |
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IXGK100N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Turn-on time: 285ns Pulsed collector current: 600A Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Collector current: 100A Gate-emitter voltage: ±20V Type of transistor: IGBT Collector-emitter voltage: 1.7kV Case: TO264 Turn-off time: 720ns кількість в упаковці: 1 шт |
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IXGK120N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns кількість в упаковці: 1 шт |
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IXGK120N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 122ns Turn-off time: 885ns кількість в упаковці: 1 шт |
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IXGK320N60B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 320A Power dissipation: 1.7kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mounting: THT Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns кількість в упаковці: 1 шт |
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IXGK400N30A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264 Mounting: THT Collector-emitter voltage: 300V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.2kA Turn-on time: 0.1µs Turn-off time: 565ns Type of transistor: IGBT Power dissipation: 1kW Kind of package: tube Gate charge: 560nC Technology: GenX3™; PT Case: TO264 кількість в упаковці: 1 шт |
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IXGK50N120C3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Gate charge: 196nC Technology: GenX3™; PT Kind of package: tube Mounting: THT Case: TO264 кількість в упаковці: 1 шт |
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IXGK55N120A3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 55A Power dissipation: 460W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns кількість в упаковці: 1 шт |
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IXGK72N60B3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns кількість в упаковці: 1 шт |
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IXGK75N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264 Mounting: THT Power dissipation: 780W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 410nC Technology: NPT Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 530A Turn-on time: 280ns Turn-off time: 725ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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IXGK82N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs кількість в упаковці: 1 шт |
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IXGK82N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns кількість в упаковці: 1 шт |
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IXGN100N170 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B Electrical mounting: screw Mechanical mounting: screw Case: SOT227B Power dissipation: 735W Type of module: IGBT Features of semiconductor devices: high voltage Technology: NPT Collector current: 95A Pulsed collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: single transistor Max. off-state voltage: 1.7kV кількість в упаковці: 1 шт |
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IXGN200N170 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Case: SOT227B Max. off-state voltage: 1.7kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 160A Pulsed collector current: 1.05kA кількість в упаковці: 1 шт |
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IXGN200N60B3 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Power dissipation: 830W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; PT Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.2kA кількість в упаковці: 1 шт |
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IXGN320N60A3 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B Technology: GenX3™; PT Collector current: 170A Power dissipation: 735W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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IXGN400N60A3 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B Technology: GenX3™; PT Collector current: 190A Power dissipation: 830W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 800A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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IXGN400N60B3 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Power dissipation: 1kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; PT Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.5kA кількість в упаковці: 1 шт |
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IXGN50N120C3H1 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Power dissipation: 460W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; PT Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A кількість в упаковці: 1 шт |
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IXGN72N60C3H1 | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W Technology: GenX3™; PT Collector current: 52A Power dissipation: 360W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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IXGP12N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGP20N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs кількість в упаковці: 1 шт |
на замовлення 43 шт: термін постачання 14-21 дні (днів) |
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IXGP20N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns кількість в упаковці: 1 шт |
на замовлення 46 шт: термін постачання 14-21 дні (днів) |
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IXGP24N120C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGP30N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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IXGP36N60A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 36A Power dissipation: 220W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 43ns Turn-off time: 1µs кількість в упаковці: 1 шт |
товар відсутній |
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IXGP42N30C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3 Type of transistor: IGBT Technology: GenX3™ Collector-emitter voltage: 300V Collector current: 42A Power dissipation: 223W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 84A Mounting: THT Gate charge: 76nC Kind of package: tube Turn-on time: 21ns Turn-off time: 113ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGP48N60A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGR24N120C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 54ns Turn-off time: 430ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGR32N90B2D1 | IXYS |
![]() Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™ Type of transistor: IGBT Technology: HiPerFAST™; PT Collector-emitter voltage: 900V Collector current: 22A Power dissipation: 160W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 89nC Kind of package: tube Turn-on time: 42ns Turn-off time: 690ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGR48N60C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 26A Power dissipation: 125W Case: ISOPLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 230A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 45ns Turn-off time: 187ns кількість в упаковці: 1 шт |
на замовлення 249 шт: термін постачання 14-21 дні (днів) |
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IXGR55N120A3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 330A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGR6N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 2.5A Power dissipation: 50W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 18.5nC Kind of package: tube Turn-on time: 91ns Turn-off time: 271ns Features of semiconductor devices: high voltage кількість в упаковці: 300 шт |
товар відсутній |
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IXGR72N60B3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGT10N170 | IXYS |
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товар відсутній |
IXGH30N120B3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
товар відсутній
IXGH30N120C3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
кількість в упаковці: 1 шт
товар відсутній
IXGH32N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
кількість в упаковці: 1 шт
товар відсутній
IXGH32N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1534.83 грн |
2+ | 1399.69 грн |
IXGH32N170A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH36N60B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
на замовлення 284 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 387.45 грн |
4+ | 305.93 грн |
10+ | 278.09 грн |
120+ | 272.87 грн |
IXGH36N60B3C1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3730.38 грн |
IXGH40N120A2 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120B2D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120C3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
кількість в упаковці: 1 шт
товар відсутній
IXGH48N60A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
товар відсутній
IXGH48N60A3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
товар відсутній
IXGH48N60B3C1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1731.36 грн |
IXGH48N60B3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 605.51 грн |
3+ | 503.56 грн |
6+ | 457.97 грн |
25+ | 452.76 грн |
30+ | 445.81 грн |
90+ | 440.59 грн |
IXGH48N60C3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
кількість в упаковці: 1 шт
на замовлення 301 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 759.93 грн |
2+ | 525.22 грн |
6+ | 478.83 грн |
10+ | 477.96 грн |
IXGH4N250C |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGH50N120C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
товар відсутній
IXGH50N90B2 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
кількість в упаковці: 1 шт
на замовлення 179 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 711.26 грн |
3+ | 490.03 грн |
6+ | 446.68 грн |
IXGH50N90B2D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 882.52 грн |
2+ | 609.15 грн |
5+ | 554.44 грн |
IXGH60N60C3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
кількість в упаковці: 1 шт
на замовлення 353 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 968.62 грн |
2+ | 758.96 грн |
4+ | 690.87 грн |
30+ | 684.79 грн |
510+ | 663.93 грн |
IXGH6N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH6N170A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH72N60A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
товар відсутній
IXGH72N60C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
товар відсутній
IXGH90N60B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 220ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 220ns
товар відсутній
IXGK100N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
кількість в упаковці: 1 шт
товар відсутній
IXGK120N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
кількість в упаковці: 1 шт
товар відсутній
IXGK120N120B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
товар відсутній
IXGK320N60B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
товар відсутній
IXGK400N30A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Mounting: THT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Turn-on time: 0.1µs
Turn-off time: 565ns
Type of transistor: IGBT
Power dissipation: 1kW
Kind of package: tube
Gate charge: 560nC
Technology: GenX3™; PT
Case: TO264
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Mounting: THT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Turn-on time: 0.1µs
Turn-off time: 565ns
Type of transistor: IGBT
Power dissipation: 1kW
Kind of package: tube
Gate charge: 560nC
Technology: GenX3™; PT
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXGK50N120C3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO264
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXGK55N120A3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
товар відсутній
IXGK72N60B3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
кількість в упаковці: 1 шт
товар відсутній
IXGK75N250 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGK82N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
кількість в упаковці: 1 шт
товар відсутній
IXGK82N120B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
кількість в упаковці: 1 шт
товар відсутній
IXGN100N170 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Power dissipation: 735W
Type of module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Collector current: 95A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Power dissipation: 735W
Type of module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Collector current: 95A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
кількість в упаковці: 1 шт
товар відсутній
IXGN200N170 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
кількість в упаковці: 1 шт
товар відсутній
IXGN200N60B3 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
кількість в упаковці: 1 шт
товар відсутній
IXGN320N60A3 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGN400N60A3 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGN400N60B3 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
кількість в упаковці: 1 шт
товар відсутній
IXGN50N120C3H1 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
кількість в упаковці: 1 шт
товар відсутній
IXGN72N60C3H1 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGP12N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
товар відсутній
IXGP20N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
на замовлення 43 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 444.54 грн |
3+ | 385.34 грн |
4+ | 295.47 грн |
10+ | 279.82 грн |
IXGP20N120B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 444.54 грн |
3+ | 385.34 грн |
4+ | 295.47 грн |
10+ | 279.82 грн |
IXGP24N120C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGP30N120B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 578.37 грн |
3+ | 407 грн |
8+ | 370.2 грн |
IXGP36N60A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 220W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 1µs
кількість в упаковці: 1 шт
товар відсутній
IXGP42N30C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 113ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 113ns
кількість в упаковці: 1 шт
товар відсутній
IXGP48N60A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
товар відсутній
IXGR24N120C3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGR32N90B2D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
кількість в упаковці: 1 шт
товар відсутній
IXGR48N60C3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
кількість в упаковці: 1 шт
на замовлення 249 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 938.68 грн |
2+ | 613.66 грн |
5+ | 557.91 грн |
IXGR55N120A3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
товар відсутній
IXGR6N170A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
кількість в упаковці: 300 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
кількість в упаковці: 300 шт
товар відсутній
IXGR72N60B3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
кількість в упаковці: 1 шт
товар відсутній