| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXA17IF1200HJ | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 18A Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 100W Kind of package: tube Gate charge: 47nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: PLUS247™ Collector-emitter voltage: 1.2kV |
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IXA20I1200PB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 22A Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 165W Kind of package: tube Gate charge: 47nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: TO220-3 Collector-emitter voltage: 1.2kV |
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IXA20IF1200HB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 22A Pulsed collector current: 45A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 165W Kind of package: tube Gate charge: 47nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV |
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IXA27IF1200HJ | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 27A Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 150W Kind of package: tube Gate charge: 76nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: PLUS247™ Collector-emitter voltage: 1.2kV |
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DHH55-36N1F | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 700A; Ufmax: 2.03V Mounting: THT Power dissipation: 210W Kind of package: tube Type of diode: rectifying Technology: Sonic FRD™ Features of semiconductor devices: fast switching Case: ISOPLUS i4-pac™ x024b Max. off-state voltage: 1.8kV Max. forward voltage: 2.03V Load current: 60A Semiconductor structure: double series Reverse recovery time: 230ns Max. forward impulse current: 700A |
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| IXGA42N30C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO263 Case: TO263 Mounting: SMD Gate-emitter voltage: ±20V Collector current: 42A Pulsed collector current: 84A Turn-on time: 21ns Turn-off time: 113ns Type of transistor: IGBT Power dissipation: 223W Gate charge: 76nC Technology: GenX3™ Collector-emitter voltage: 300V |
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| IXGP42N30C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 42A Pulsed collector current: 84A Turn-on time: 21ns Turn-off time: 113ns Type of transistor: IGBT Power dissipation: 223W Gate charge: 76nC Technology: GenX3™ Collector-emitter voltage: 300V |
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| UGE0421AY4 | IXYS |
Category: Diodes - others Description: Diode: rectifying; 3.2kV; 7.4/14.2/19.7A; 40A; 7kW; Ø55x23mm; bulk Type of diode: rectifying Max. off-state voltage: 3.2kV Load current: 7.4/14.2/19.7A Max. load current: 40A Power dissipation: 7kW Case: Ø55x23mm Mounting: screw type Semiconductor structure: single diode Features of semiconductor devices: high voltage Max. forward impulse current: 300A Max. forward voltage: 2.72V Kind of package: bulk Fastening thread: M8 |
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IXFH50N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 50A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 218ns |
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IXTT36N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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UGE3126AY4 | IXYS |
Category: Diodes - others Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A Type of diode: rectifying Max. off-state voltage: 24kV Load current: 0.8/1.4/2A Max. load current: 5A Power dissipation: 1.6kW Case: Ø55x23mm Mounting: screw type Semiconductor structure: single diode Features of semiconductor devices: high voltage Max. forward impulse current: 70A Max. forward voltage: 18V Kind of package: bulk Fastening thread: M8 |
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| MG1750S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 50A Case: Y4-M5 Electrical mounting: FASTON connectors; screw Technology: Field Stop; Trench Mechanical mounting: screw |
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| VBO105-08NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 800V; If: 100A; Ifsm: 1.5kA Max. off-state voltage: 0.8kV Load current: 100A Version: module Case: PWS-C Max. forward impulse current: 1.5kA Electrical mounting: screw Leads: M5 screws Mechanical mounting: screw Type of bridge rectifier: single-phase |
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IXFA8N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 8A Pulsed drain current: 16A Power dissipation: 200W Case: TO263HV Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 125ns |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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IXFP8N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 8A Pulsed drain current: 16A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 125ns |
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IXFQ8N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 8A Pulsed drain current: 16A Power dissipation: 200W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 125ns |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IXFP230N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO220AB On-state resistance: 4.2mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns |
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IXFP26N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 26A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 105ns |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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IXFP30N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXFP36N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 36A Power dissipation: 176W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 75ns |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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IXFP36N20X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 36A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 75ns |
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IXFP36N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO220AB; 125ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 347W Case: TO220AB On-state resistance: 0.11Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 125ns |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IXDF604SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-on time: 81ns Turn-off time: 79ns |
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IXDF604SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 449 шт: термін постачання 21-30 дні (днів) |
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| IXDF604SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Turn-on time: 81ns Turn-off time: 79ns |
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IXFN360N15T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A Case: SOT227B Semiconductor structure: single transistor Mechanical mounting: screw Power dissipation: 1.07kW Polarisation: unipolar Drain current: 310A Electrical mounting: screw Reverse recovery time: 150ns Type of module: MOSFET transistor Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 900A On-state resistance: 4mΩ Drain-source voltage: 150V |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXFX360N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns Case: PLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1670W Polarisation: unipolar Drain current: 360A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4mΩ Drain-source voltage: 150V |
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| MMIX1F360N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 680W Polarisation: unipolar Drain current: 235A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A On-state resistance: 4.4mΩ Drain-source voltage: 150V |
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IXTT500N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 500A Power dissipation: 1kW Case: TO268 On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 84ns |
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IXFH56N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3 Mounting: THT Reverse recovery time: 115ns Drain-source voltage: 300V Drain current: 56A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 56nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Case: TO247-3 |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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IXFP4N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 3.5A Pulsed drain current: 10A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 170ns |
на замовлення 279 шт: термін постачання 21-30 дні (днів) |
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IXFK80N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.04kW Case: TO264 On-state resistance: 65mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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IXFK80N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.25kW Case: TO264 On-state resistance: 65mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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XCA170 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 239 шт: термін постачання 21-30 дні (днів) |
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XCA170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
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| XCA170STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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IXTA1R6N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO263; 400ns Mounting: SMD Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO263 Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube |
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IXTP1R6N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO220AB; 400ns Mounting: THT Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO220AB Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube |
на замовлення 161 шт: термін постачання 21-30 дні (днів) |
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| MMO175-12IO7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 80A; ECO-PAC 1; Ufmax: 1.57V Case: ECO-PAC 1 Kind of package: bulk Semiconductor structure: opposing Max. off-state voltage: 1.2kV Gate current: 100/200mA Electrical mounting: THT Mechanical mounting: screw Max. forward impulse current: 1.5kA Load current: 80A Max. forward voltage: 1.57V Leads: wire Ø 0.75mm Type of module: thyristor |
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| MMO175-16IO7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V Case: ECO-PAC 1 Kind of package: bulk Semiconductor structure: opposing Max. off-state voltage: 1.6kV Gate current: 100/200mA Electrical mounting: THT Mechanical mounting: screw Max. forward impulse current: 1.5kA Load current: 80A Max. forward voltage: 1.57V Leads: wire Ø 0.75mm Type of module: thyristor |
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| MWI200-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge Max. off-state voltage: 0.6kV Collector current: 115A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Power dissipation: 675W Technology: NPT Mechanical mounting: screw |
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IXTA1R6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 645nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
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IXTP1R6N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Gate charge: 645nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
на замовлення 177 шт: термін постачання 21-30 дні (днів) |
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IXTF6N200P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; 520ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 4A Power dissipation: 215W Case: ISOPLUS i4-pac™ x024c Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 520ns |
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| IXTX6N200P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2kV Drain current: 6A Power dissipation: 960W Case: TO247PLUS-HV On-state resistance: 4Ω Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 520ns |
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FMM150-0075X2F | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchT2™; unipolar; 75V; 120A; Idm: 500A Type of transistor: N-MOSFET x2 Technology: TrenchT2™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Pulsed drain current: 500A Power dissipation: 170W Case: ISOPLUS i4-pac™ x024a Gate-source voltage: ±30V On-state resistance: 5.8mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Semiconductor structure: double series Reverse recovery time: 66ns |
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IXFH94N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO247-3; 155ns Reverse recovery time: 155ns Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.19µC Kind of channel: enhanced Mounting: THT Case: TO247-3 |
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IXFQ94N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO3P Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 102nC Kind of channel: enhanced Mounting: THT Case: TO3P |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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IXFT94N30P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268 Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 102nC Kind of channel: enhanced Mounting: SMD Case: TO268 |
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IXFT94N30T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns Reverse recovery time: 155ns Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.19µC Kind of channel: enhanced Mounting: SMD Case: TO268 |
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CS20-12IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube Mounting: THT Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.2kV Max. load current: 31A Load current: 20A Gate current: 50mA Max. forward impulse current: 260A Kind of package: tube |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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IXBF20N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c Case: ISOPLUS i4-pac™ x024c Mounting: THT Kind of package: tube Power dissipation: 150W Features of semiconductor devices: high voltage Gate charge: 105nC Technology: BiMOSFET™ Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 130A Turn-on time: 64ns Turn-off time: 0.3µs Type of transistor: IGBT |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXGH120N30B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 540W Gate charge: 225nC Technology: GenX3™; PT Collector-emitter voltage: 300V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 480A Turn-on time: 51ns Turn-off time: 356ns Type of transistor: IGBT |
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IXGH120N30C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 540W Gate charge: 230nC Technology: GenX3™; PT Collector-emitter voltage: 300V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 600A Turn-on time: 66ns Turn-off time: 233ns Type of transistor: IGBT |
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DSB60C30PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 145W; TO220AB; tube Case: TO220AB Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 30V Max. forward voltage: 0.49V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 530A Power dissipation: 145W Kind of package: tube |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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DSB60C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 145W; TO220AB; tube Case: TO220AB Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 45V Max. forward voltage: 0.6V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 490A Power dissipation: 145W Kind of package: tube |
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| IXYL60N450 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™ Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 38A Power dissipation: 417W Case: ISOPLUS i5-pac™ Gate-emitter voltage: ±20V Pulsed collector current: 680A Mounting: THT Gate charge: 366nC Kind of package: tube Turn-on time: 724ns Turn-off time: 1.58µs Features of semiconductor devices: high voltage |
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DSB10I45PM | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10A; 30W; TO220FP-2; tube Mounting: THT Case: TO220FP-2 Kind of package: tube Power dissipation: 30W Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward voltage: 0.52V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 260A |
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IXTH80N20L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 80A Power dissipation: 520W Case: TO247-3 On-state resistance: 32mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 250ns |
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IXTT80N20L | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 80A Power dissipation: 520W Case: TO268 On-state resistance: 32mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 250ns |
товар відсутній |
| IXA17IF1200HJ |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
товар відсутній
| IXA20I1200PB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 22A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO220-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 22A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO220-3
Collector-emitter voltage: 1.2kV
товар відсутній
| IXA20IF1200HB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 22A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 22A
Pulsed collector current: 45A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 165W
Kind of package: tube
Gate charge: 47nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
товар відсутній
| IXA27IF1200HJ |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 27A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 27A
Pulsed collector current: 75A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: tube
Gate charge: 76nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
товар відсутній
| DHH55-36N1F |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 700A; Ufmax: 2.03V
Mounting: THT
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: ISOPLUS i4-pac™ x024b
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.03V
Load current: 60A
Semiconductor structure: double series
Reverse recovery time: 230ns
Max. forward impulse current: 700A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 700A; Ufmax: 2.03V
Mounting: THT
Power dissipation: 210W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: ISOPLUS i4-pac™ x024b
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.03V
Load current: 60A
Semiconductor structure: double series
Reverse recovery time: 230ns
Max. forward impulse current: 700A
товар відсутній
| IXGA42N30C3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO263
Case: TO263
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 113ns
Type of transistor: IGBT
Power dissipation: 223W
Gate charge: 76nC
Technology: GenX3™
Collector-emitter voltage: 300V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO263
Case: TO263
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 113ns
Type of transistor: IGBT
Power dissipation: 223W
Gate charge: 76nC
Technology: GenX3™
Collector-emitter voltage: 300V
товар відсутній
| IXGP42N30C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 113ns
Type of transistor: IGBT
Power dissipation: 223W
Gate charge: 76nC
Technology: GenX3™
Collector-emitter voltage: 300V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 113ns
Type of transistor: IGBT
Power dissipation: 223W
Gate charge: 76nC
Technology: GenX3™
Collector-emitter voltage: 300V
товар відсутній
| UGE0421AY4 |
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Виробник: IXYS
Category: Diodes - others
Description: Diode: rectifying; 3.2kV; 7.4/14.2/19.7A; 40A; 7kW; Ø55x23mm; bulk
Type of diode: rectifying
Max. off-state voltage: 3.2kV
Load current: 7.4/14.2/19.7A
Max. load current: 40A
Power dissipation: 7kW
Case: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 300A
Max. forward voltage: 2.72V
Kind of package: bulk
Fastening thread: M8
Category: Diodes - others
Description: Diode: rectifying; 3.2kV; 7.4/14.2/19.7A; 40A; 7kW; Ø55x23mm; bulk
Type of diode: rectifying
Max. off-state voltage: 3.2kV
Load current: 7.4/14.2/19.7A
Max. load current: 40A
Power dissipation: 7kW
Case: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 300A
Max. forward voltage: 2.72V
Kind of package: bulk
Fastening thread: M8
товар відсутній
| IXFH50N85X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 218ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 218ns
товар відсутній
| IXTT36N50P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
| UGE3126AY4 |
|
Виробник: IXYS
Category: Diodes - others
Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A
Type of diode: rectifying
Max. off-state voltage: 24kV
Load current: 0.8/1.4/2A
Max. load current: 5A
Power dissipation: 1.6kW
Case: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 70A
Max. forward voltage: 18V
Kind of package: bulk
Fastening thread: M8
Category: Diodes - others
Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A
Type of diode: rectifying
Max. off-state voltage: 24kV
Load current: 0.8/1.4/2A
Max. load current: 5A
Power dissipation: 1.6kW
Case: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 70A
Max. forward voltage: 18V
Kind of package: bulk
Fastening thread: M8
товар відсутній
| MG1750S-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 50A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 50A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
| VBO105-08NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 100A; Ifsm: 1.5kA
Max. off-state voltage: 0.8kV
Load current: 100A
Version: module
Case: PWS-C
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Leads: M5 screws
Mechanical mounting: screw
Type of bridge rectifier: single-phase
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 100A; Ifsm: 1.5kA
Max. off-state voltage: 0.8kV
Load current: 100A
Version: module
Case: PWS-C
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Leads: M5 screws
Mechanical mounting: screw
Type of bridge rectifier: single-phase
товар відсутній
| IXFA8N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 200W
Case: TO263HV
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 125ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 200W
Case: TO263HV
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 125ns
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 392.46 грн |
| 3+ | 324.5 грн |
| 8+ | 307.08 грн |
| 10+ | 304.9 грн |
| 50+ | 298.37 грн |
| IXFP8N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
товар відсутній
| IXFQ8N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 200W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 125ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 200W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 125ns
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 352.59 грн |
| 3+ | 294.74 грн |
| 4+ | 232.3 грн |
| IXFP230N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
товар відсутній
| IXFP26N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 26A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 105ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 26A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 105ns
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.5 грн |
| 3+ | 186.57 грн |
| 5+ | 174.95 грн |
| 10+ | 167.69 грн |
| 14+ | 165.52 грн |
| 50+ | 159.71 грн |
| IXFP30N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 364.32 грн |
| 3+ | 299.09 грн |
| 4+ | 265.7 грн |
| 9+ | 251.18 грн |
| IXFP36N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 36A
Power dissipation: 176W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 176W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 36A
Power dissipation: 176W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 75ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 231.41 грн |
| 3+ | 190.2 грн |
| 5+ | 168.42 грн |
| 14+ | 159.71 грн |
| 50+ | 158.98 грн |
| IXFP36N20X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 36A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 36A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 75ns
товар відсутній
| IXFP36N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO220AB; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO220AB; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.08 грн |
| 3+ | 208.35 грн |
| 5+ | 185.12 грн |
| 13+ | 174.95 грн |
| IXDF604SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
| IXDF604SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 449 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.63 грн |
| 5+ | 84.94 грн |
| 11+ | 76.22 грн |
| 25+ | 75.5 грн |
| 31+ | 71.87 грн |
| 100+ | 71.14 грн |
| IXDF604SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
| IXFN360N15T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Power dissipation: 1.07kW
Polarisation: unipolar
Drain current: 310A
Electrical mounting: screw
Reverse recovery time: 150ns
Type of module: MOSFET transistor
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
On-state resistance: 4mΩ
Drain-source voltage: 150V
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Power dissipation: 1.07kW
Polarisation: unipolar
Drain current: 310A
Electrical mounting: screw
Reverse recovery time: 150ns
Type of module: MOSFET transistor
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
On-state resistance: 4mΩ
Drain-source voltage: 150V
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3085.74 грн |
| IXFX360N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Drain current: 360A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Drain current: 360A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain-source voltage: 150V
товар відсутній
| MMIX1F360N15T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 680W
Polarisation: unipolar
Drain current: 235A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
On-state resistance: 4.4mΩ
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 680W
Polarisation: unipolar
Drain current: 235A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
On-state resistance: 4.4mΩ
Drain-source voltage: 150V
товар відсутній
| IXTT500N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
товар відсутній
| IXFH56N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Reverse recovery time: 115ns
Drain-source voltage: 300V
Drain current: 56A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Reverse recovery time: 115ns
Drain-source voltage: 300V
Drain current: 56A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
на замовлення 254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 662.96 грн |
| 2+ | 457.35 грн |
| 6+ | 431.94 грн |
| IXFP4N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 3.5A
Pulsed drain current: 10A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 170ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 3.5A
Pulsed drain current: 10A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 170ns
на замовлення 279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.27 грн |
| 3+ | 166.97 грн |
| 6+ | 150.27 грн |
| 16+ | 142.29 грн |
| 50+ | 140.11 грн |
| IXFK80N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1188.33 грн |
| 3+ | 1043.92 грн |
| IXFK80N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| XCA170 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.16 грн |
| 9+ | 100.18 грн |
| 24+ | 95.1 грн |
| XCA170S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.16 грн |
| 9+ | 101.63 грн |
| 23+ | 95.83 грн |
| XCA170STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| IXTA1R6N50D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO263; 400ns
Mounting: SMD
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO263
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO263; 400ns
Mounting: SMD
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO263
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| IXTP1R6N50D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO220AB; 400ns
Mounting: THT
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO220AB
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO220AB; 400ns
Mounting: THT
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO220AB
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
на замовлення 161 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.93 грн |
| 8+ | 111.07 грн |
| 22+ | 104.54 грн |
| MMO175-12IO7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Case: ECO-PAC 1
Kind of package: bulk
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Gate current: 100/200mA
Electrical mounting: THT
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Load current: 80A
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Case: ECO-PAC 1
Kind of package: bulk
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Gate current: 100/200mA
Electrical mounting: THT
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Load current: 80A
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Type of module: thyristor
товар відсутній
| MMO175-16IO7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Case: ECO-PAC 1
Kind of package: bulk
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Gate current: 100/200mA
Electrical mounting: THT
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Load current: 80A
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Case: ECO-PAC 1
Kind of package: bulk
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Gate current: 100/200mA
Electrical mounting: THT
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Load current: 80A
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Type of module: thyristor
товар відсутній
| MWI200-06A8 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 0.6kV
Collector current: 115A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 675W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 0.6kV
Collector current: 115A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 675W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| IXTA1R6N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
товар відсутній
| IXTP1R6N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
на замовлення 177 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.93 грн |
| 8+ | 110.34 грн |
| 22+ | 104.54 грн |
| IXTF6N200P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; 520ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 4A
Power dissipation: 215W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 520ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; 520ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 4A
Power dissipation: 215W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 520ns
товар відсутній
| IXTX6N200P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 6A
Power dissipation: 960W
Case: TO247PLUS-HV
On-state resistance: 4Ω
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 520ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 6A
Power dissipation: 960W
Case: TO247PLUS-HV
On-state resistance: 4Ω
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 520ns
товар відсутній
| FMM150-0075X2F |
|
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchT2™; unipolar; 75V; 120A; Idm: 500A
Type of transistor: N-MOSFET x2
Technology: TrenchT2™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 500A
Power dissipation: 170W
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±30V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
Reverse recovery time: 66ns
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchT2™; unipolar; 75V; 120A; Idm: 500A
Type of transistor: N-MOSFET x2
Technology: TrenchT2™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 500A
Power dissipation: 170W
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±30V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
Reverse recovery time: 66ns
товар відсутній
| IXFH94N30T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO247-3; 155ns
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO247-3; 155ns
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
товар відсутній
| IXFQ94N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO3P
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 102nC
Kind of channel: enhanced
Mounting: THT
Case: TO3P
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO3P
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 102nC
Kind of channel: enhanced
Mounting: THT
Case: TO3P
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 794.3 грн |
| 2+ | 552.45 грн |
| 3+ | 551.72 грн |
| 5+ | 521.96 грн |
| IXFT94N30P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 102nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 102nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
товар відсутній
| IXFT94N30T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
товар відсутній
| CS20-12IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Max. forward impulse current: 260A
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Max. forward impulse current: 260A
Kind of package: tube
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 322.88 грн |
| 3+ | 264.97 грн |
| 4+ | 238.11 грн |
| 10+ | 225.04 грн |
| 30+ | 222.14 грн |
| IXBF20N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Kind of package: tube
Power dissipation: 150W
Features of semiconductor devices: high voltage
Gate charge: 105nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Kind of package: tube
Power dissipation: 150W
Features of semiconductor devices: high voltage
Gate charge: 105nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Type of transistor: IGBT
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3722.9 грн |
| 10+ | 3379.3 грн |
| IXGH120N30B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 540W
Gate charge: 225nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 51ns
Turn-off time: 356ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 540W
Gate charge: 225nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 51ns
Turn-off time: 356ns
Type of transistor: IGBT
товар відсутній
| IXGH120N30C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 540W
Gate charge: 230nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 600A
Turn-on time: 66ns
Turn-off time: 233ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 540W
Gate charge: 230nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 600A
Turn-on time: 66ns
Turn-off time: 233ns
Type of transistor: IGBT
товар відсутній
| DSB60C30PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 145W; TO220AB; tube
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 530A
Power dissipation: 145W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 145W; TO220AB; tube
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 530A
Power dissipation: 145W
Kind of package: tube
на замовлення 175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.22 грн |
| 9+ | 103.81 грн |
| 23+ | 98 грн |
| DSB60C45PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 145W; TO220AB; tube
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 45V
Max. forward voltage: 0.6V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 145W; TO220AB; tube
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 45V
Max. forward voltage: 0.6V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
товар відсутній
| IXYL60N450 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
товар відсутній
| DSB10I45PM |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; 30W; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Power dissipation: 30W
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.52V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 260A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; 30W; TO220FP-2; tube
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Power dissipation: 30W
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.52V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 260A
товар відсутній
| IXTH80N20L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
товар відсутній
| IXTT80N20L |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
товар відсутній