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IXTX6N200P3HV Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_standard_ixtx6n200p3hv_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 2000V 6A TO247PLUSHV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247PLUS-HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 4627.29 грн |
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Технічний опис IXTX6N200P3HV Littelfuse Inc.
Description: MOSFET N-CH 2000V 6A TO247PLUSHV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247PLUS-HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Інші пропозиції IXTX6N200P3HV за ціною від 3685.35 грн до 5027.12 грн
Фото | Назва | Виробник | Інформація |
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IXTX6N200P3HV | Виробник : IXYS |
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на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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IXTX6N200P3HV | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2kV Drain current: 6A Power dissipation: 960W Case: TO247PLUS-HV On-state resistance: 4Ω Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 520ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTX6N200P3HV | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2kV Drain current: 6A Power dissipation: 960W Case: TO247PLUS-HV On-state resistance: 4Ω Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 520ns |
товар відсутній |