на замовлення 300 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 346.37 грн |
| 10+ | 286.12 грн |
| 50+ | 235.56 грн |
| 100+ | 201.41 грн |
| 250+ | 189.56 грн |
| 500+ | 179.11 грн |
| 1000+ | 175.62 грн |
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Технічний опис IXFP36N20X3M IXYS
Description: MOSFET N-CH 200V 36A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 500µA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V.
Інші пропозиції IXFP36N20X3M
| Фото | Назва | Виробник | Інформація |
Доступність |
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IXFP36N20X3M | Виробник : Littelfuse |
 Trans MOSFET N-CH 200V 36A 3-Pin(3+Tab) OVERMOLDED TO-220 |
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IXFP36N20X3M | Виробник : Littelfuse |
Trans MOSFET N-CH 200V 36A 3-Pin(3+Tab) OVERMOLDED TO-220 |
товар відсутній |
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| IXFP36N20X3M | Виробник : Littelfuse |
Trans MOSFET N-CH 200V 36A 3-Pin(3+Tab) OVERMOLDED TO-220 |
товар відсутній |
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IXFP36N20X3M | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 36A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 75ns кількість в упаковці: 1 шт |
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IXFP36N20X3M | Виробник : IXYS |
Description: MOSFET N-CH 200V 36A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 500µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V |
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IXFP36N20X3M | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 36A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 36A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 75ns |
товар відсутній |