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IXTT500N04T2 IXYS
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
кількість в упаковці: 1 шт
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Технічний опис IXTT500N04T2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 500A, Power dissipation: 1kW, Case: TO268, On-state resistance: 1.6mΩ, Mounting: SMD, Gate charge: 405nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: thrench gate power mosfet, Reverse recovery time: 84ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTT500N04T2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTT500N04T2 | Виробник : IXYS |
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товар відсутній |
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IXTT500N04T2 | Виробник : IXYS |
![]() |
товар відсутній |
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IXTT500N04T2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 500A Power dissipation: 1kW Case: TO268 On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 84ns |
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