IXGP42N30C3 IXYS
Виробник: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 113ns
Type of transistor: IGBT
Power dissipation: 223W
Gate charge: 76nC
Technology: GenX3™
Collector-emitter voltage: 300V
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IXGP42N30C3 IXYS
Description: IGBT 300V 223W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 21ns/113ns, Switching Energy: 120µJ (on), 150µJ (off), Test Condition: 200V, 21A, 10Ohm, 15V, Gate Charge: 76 nC, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 223 W.
Інші пропозиції IXGP42N30C3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXGP42N30C3 | Виробник : IXYS |
Description: IGBT 300V 223W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 21ns/113ns Switching Energy: 120µJ (on), 150µJ (off) Test Condition: 200V, 21A, 10Ohm, 15V Gate Charge: 76 nC Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 250 A Power - Max: 223 W |
товар відсутній |
|
 |
IXGP42N30C3 | Виробник : IXYS |
IGBT Transistors 42 Amps 300V |
товар відсутній |
|
| IXGP42N30C3 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 42A Pulsed collector current: 84A Turn-on time: 21ns Turn-off time: 113ns Type of transistor: IGBT Power dissipation: 223W Gate charge: 76nC Technology: GenX3™ Collector-emitter voltage: 300V |
товар відсутній |