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IXGH120N30B3 IXYS
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Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 540W
Gate charge: 225nC
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 51ns
Turn-off time: 356ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
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Технічний опис IXGH120N30B3 IXYS
Description: IGBT 300V 75A 540W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A, Supplier Device Package: TO-247AD, IGBT Type: PT, Gate Charge: 225 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 480 A, Power - Max: 540 W.
Інші пропозиції IXGH120N30B3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXGH120N30B3 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A Supplier Device Package: TO-247AD IGBT Type: PT Gate Charge: 225 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 480 A Power - Max: 540 W |
товар відсутній |
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IXGH120N30B3 | Виробник : IXYS |
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товар відсутній |
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![]() |
IXGH120N30B3 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 540W Gate charge: 225nC Technology: GenX3™; PT Collector-emitter voltage: 300V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 480A Turn-on time: 51ns Turn-off time: 356ns Type of transistor: IGBT |
товар відсутній |