Технічний опис IXFH94N30T IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO247-3; 155ns, Reverse recovery time: 155ns, Drain-source voltage: 300V, Drain current: 94A, On-state resistance: 36mΩ, Type of transistor: N-MOSFET, Power dissipation: 890W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: thrench gate power mosfet, Gate charge: 0.19µC, Kind of channel: enhanced, Mounting: THT, Case: TO247-3, кількість в упаковці: 1 шт.
Інші пропозиції IXFH94N30T
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IXFH94N30T | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO247-3; 155ns Reverse recovery time: 155ns Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.19µC Kind of channel: enhanced Mounting: THT Case: TO247-3 кількість в упаковці: 1 шт |
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IXFH94N30T | Виробник : IXYS |
MOSFET Trench HiperFETs Power MOSFET |
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IXFH94N30T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO247-3; 155ns Reverse recovery time: 155ns Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.19µC Kind of channel: enhanced Mounting: THT Case: TO247-3 |
товар відсутній |