| Фото | Назва | Виробник | Інформація |
Доступність |
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| MDNA240U2200ED | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; 2.2kV; If: 240A; Ifsm: 1.5kA; module Max. off-state voltage: 2.2kV Load current: 240A Case: E2-Pack Version: module Max. forward impulse current: 1.5kA Electrical mounting: Press-in PCB Mechanical mounting: screw Type of bridge rectifier: three-phase |
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IXTF200N10T | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 156W Case: ISOPLUS i4-pac™ x024d On-state resistance: 7mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns |
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IXTH20P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -20A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 406ns |
на замовлення 389 шт: термін постачання 21-30 дні (днів) |
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IXTN200N10L2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 178A Pulsed drain current: 500A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 11mΩ Gate charge: 540nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 245ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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IXTR20P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Reverse recovery time: 406ns Power dissipation: 190W Gate charge: 103nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -500V Drain current: -13A On-state resistance: 490mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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IXTT20P50P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO268 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -20A Power dissipation: 460W Case: TO268 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 103nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 406ns |
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CPC1976Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; THT; SIP4 Mounting: THT Case: SIP4 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 2A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 240V AC Control current max.: 50mA Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm |
на замовлення 169 шт: термін постачання 21-30 дні (днів) |
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VUB160-16NOXT | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W Mechanical mounting: screw Electrical mounting: Press-in PCB Application: Inverter Case: V2-Pack Gate-emitter voltage: ±20V Collector current: 175A Pulsed collector current: 450A Power dissipation: 695W Type of module: IGBT Technology: X2PT Topology: buck chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor |
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IX4310N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 5...24V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting |
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| IX4351NETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver Case: SO16-EP Output current: -9...9A Number of channels: 2 Supply voltage: -10...25V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
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IXFT150N17T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 175V Drain current: 150A Power dissipation: 880W Case: TO268 On-state resistance: 12mΩ Mounting: SMD Gate charge: 233nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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| MCO600-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 600A; Y1; Ufmax: 1.34V Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 600A Case: Y1 Max. forward voltage: 1.34V Gate current: 300/400mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCO600-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.8kV; 600A; Y1; Ufmax: 1.34V Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.8kV Load current: 600A Case: Y1 Max. forward voltage: 1.34V Gate current: 300/400mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCO600-20io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2kV Load current: 600A Case: Y1 Max. forward voltage: 1.34V Gate current: 300/400mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCO600-22io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2.2kV Load current: 600A Case: Y1 Max. forward voltage: 1.34V Gate current: 300/400mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCO75-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 80A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 80A Case: SOT227B Max. forward voltage: 1.67V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCO801-14IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.4kV; 830A; Ifmax: 2335A; W73 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.4kV Load current: 830A Max. load current: 2335A Case: W73 Max. forward voltage: 0.8V Max. forward impulse current: 30kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| VCO132-12io7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 130A; ECO-PAC 2; THT Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.2kV Load current: 130A Case: ECO-PAC 2 Max. forward voltage: 1.3V Gate current: 300/400mA Electrical mounting: THT Leads: wire Ø 1.5mm Kind of package: bulk Mechanical mounting: screw |
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| VCO180-12io7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 180A; ECO-PAC 2; THT Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.2kV Load current: 180A Case: ECO-PAC 2 Max. forward voltage: 1.1V Gate current: 300/400mA Electrical mounting: THT Leads: wire Ø 1.5mm Kind of package: bulk Mechanical mounting: screw |
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| MEA300-06DA | IXYS |
Category: Diode modules Description: Module: diode; common anode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Type of module: diode Semiconductor structure: common anode Max. off-state voltage: 0.6kV Load current: 304A Case: Y4-M6 Max. forward voltage: 1.19V Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw |
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MEA95-06DA | IXYS |
Category: Diode modules Description: Module: diode; common anode; 600V; If: 95A; TO240AA; Ufmax: 1.36V Type of module: diode Semiconductor structure: common anode Max. off-state voltage: 0.6kV Load current: 95A Case: TO240AA Max. forward voltage: 1.36V Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw |
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MDA95-22N1B | IXYS |
Category: Diode modules Description: Module: diode; double,common anode; 2.2kV; If: 120A; TO240AA; screw Type of module: diode Semiconductor structure: common anode; double Max. off-state voltage: 2.2kV Load current: 120A Case: TO240AA Max. forward voltage: 1.13V Max. forward impulse current: 2.38kA Electrical mounting: screw Max. load current: 180A Mechanical mounting: screw |
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| MMO230-12IO7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 105A; ECO-PAC 2; Ufmax: 1.5V Leads: wire Ø 0.75mm Type of module: thyristor Mechanical mounting: screw Max. forward impulse current: 2.25kA Gate current: 150/200mA Semiconductor structure: opposing Load current: 105A Max. forward voltage: 1.5V Kind of package: bulk Electrical mounting: THT Max. off-state voltage: 1.2kV Case: ECO-PAC 2 |
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| MMO230-16IO7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V Leads: wire Ø 0.75mm Type of module: thyristor Mechanical mounting: screw Max. forward impulse current: 2.25kA Gate current: 150/200mA Semiconductor structure: opposing Load current: 105A Max. forward voltage: 1.5V Kind of package: bulk Electrical mounting: THT Max. off-state voltage: 1.6kV Case: ECO-PAC 2 |
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IXTY1R6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 645nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
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DSI30-08AS | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 30A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.25V Max. forward impulse current: 255A Power dissipation: 160W Kind of package: reel; tape |
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LBA710 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 0.6Ω; THT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IXTP32N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO220AB; 110ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 32A Power dissipation: 200W Case: TO220AB On-state resistance: 78mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 110ns |
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IXFX120N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 700W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced |
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IXFX120N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 1.13kW Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Drain-source voltage: 300V Drain current: 120A On-state resistance: 27mΩ Type of transistor: N-MOSFET |
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IXFX120N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 960W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhanced Drain-source voltage: 300V Drain current: 120A On-state resistance: 24mΩ Type of transistor: N-MOSFET |
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IXTH96N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Power dissipation: 625W Case: TO247-3 On-state resistance: 29mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 158ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| UGB6124AG | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 10.5kV; If: 1A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 10.5kV Load current: 1A Max. forward impulse current: 50A Electrical mounting: THT Mechanical mounting: screw Version: module Case: UGB1 |
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MCC225-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 220A; Y1; Ufmax: 1.14V Case: Y1 Kind of package: bulk Max. off-state voltage: 1.2kV Max. forward voltage: 1.14V Load current: 220A Semiconductor structure: double series Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
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MCC225-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 220A; Y1; Ufmax: 1.14V Case: Y1 Kind of package: bulk Max. off-state voltage: 1.4kV Max. forward voltage: 1.14V Load current: 220A Semiconductor structure: double series Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
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MCC225-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 220A; Y1; Ufmax: 1.14V Case: Y1 Kind of package: bulk Max. off-state voltage: 1.6kV Max. forward voltage: 1.14V Load current: 220A Semiconductor structure: double series Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
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MCC225-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 220A; Y1; Ufmax: 1.14V Case: Y1 Kind of package: bulk Max. off-state voltage: 1.8kV Max. forward voltage: 1.14V Load current: 220A Semiconductor structure: double series Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
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DMA30P1200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 30A Type of diode: rectifying Max. forward impulse current: 370A |
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DSEP29-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 1.26V Max. forward impulse current: 250A Power dissipation: 165W Technology: HiPerFRED™ Kind of package: tube Heatsink thickness: 1.14...1.39mm |
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VUO68-12NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 70A Max. forward impulse current: 300A Electrical mounting: THT Version: module Max. forward voltage: 1.15V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
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FMD15-06KC5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A Mounting: THT Features of semiconductor devices: super junction coolmos Gate charge: 40nC Technology: HiPerDynFRED Kind of channel: enhanced Gate-source voltage: ±20V Topology: boost chopper Case: ISOPLUS i4-pac™ x024a Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 15A On-state resistance: 0.165Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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FMD47-06KC5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A Mounting: THT Features of semiconductor devices: super junction coolmos Gate charge: 150nC Technology: HiPerDynFRED Kind of channel: enhanced Gate-source voltage: ±20V Topology: boost chopper Case: ISOPLUS i4-pac™ x024a Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 32A On-state resistance: 45mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube |
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FMD40-06KC | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 38A; 280W Mounting: THT Features of semiconductor devices: super junction coolmos Gate charge: 250nC Technology: HiPerDynFRED Kind of channel: enhanced Gate-source voltage: ±20V Topology: boost chopper Case: ISOPLUS i4-pac™ x024a Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube |
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DSA10I100PM | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10A; 35W; TO220FP-2; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A Power dissipation: 35W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 240A Max. forward voltage: 0.71V |
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DSA30C150HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 15Ax2; 85W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 15A x2 Power dissipation: 85W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 330A Max. forward voltage: 0.74V |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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DSA30C150PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 15Ax2; 85W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 15A x2 Power dissipation: 85W Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 330A Max. forward voltage: 0.75V |
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DSA30C200IB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; 85W; TO262; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Power dissipation: 85W Semiconductor structure: common cathode; double Case: TO262 Kind of package: tube Max. forward impulse current: 320A Max. forward voltage: 0.78V |
на замовлення 399 шт: термін постачання 21-30 дні (днів) |
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DSA30C200PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; 85W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Power dissipation: 85W Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 320A Max. forward voltage: 0.78V |
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DSA30C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 85W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Power dissipation: 85W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 340A Max. forward voltage: 0.62V |
на замовлення 271 шт: термін постачання 21-30 дні (днів) |
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DSA30C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 85W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Power dissipation: 85W Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 340A Max. forward voltage: 0.63V |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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DSA30I150PA | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 30A; 175W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 30A Power dissipation: 175W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 390A Max. forward voltage: 0.8V |
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DSA50C100QB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 160W; TO3P; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 25A x2 Power dissipation: 160W Semiconductor structure: common cathode; double Case: TO3P Kind of package: tube Max. forward impulse current: 440A Max. forward voltage: 0.72V |
на замовлення 223 шт: термін постачання 21-30 дні (днів) |
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IXFP26N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 36A Power dissipation: 460W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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| MDO500-12N1 | IXYS |
Category: Diode modules Description: Module: diode; single diode; 1.2kV; If: 560A; Y1-CU; Ufmax: 0.98V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 560A Case: Y1-CU Max. forward voltage: 0.98V Max. forward impulse current: 12.8kA Electrical mounting: screw Mechanical mounting: screw |
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| MDO500-14N1 | IXYS |
Category: Diode modules Description: Module: diode; single diode; 1.4kV; If: 560A; Y1-CU; Ufmax: 0.98V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.4kV Load current: 560A Case: Y1-CU Max. forward voltage: 0.98V Max. forward impulse current: 15kA Electrical mounting: screw Mechanical mounting: screw |
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MDO500-16N1 | IXYS |
Category: Diode modules Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 0.98V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.6kV Load current: 560A Case: Y1-CU Max. forward voltage: 0.98V Max. forward impulse current: 12.8kA Electrical mounting: screw Mechanical mounting: screw |
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| MDO500-18N1 | IXYS |
Category: Diode modules Description: Module: diode; single diode; 1.8kV; If: 560A; Y1-CU; Ufmax: 0.98V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.8kV Load current: 560A Case: Y1-CU Max. forward voltage: 0.98V Max. forward impulse current: 15kA Electrical mounting: screw Mechanical mounting: screw |
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| MDO500-20N1 | IXYS |
Category: Diode modules Description: Module: diode; single diode; 2kV; If: 560A; Y1-CU; Ufmax: 0.98V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 2kV Load current: 560A Case: Y1-CU Max. forward voltage: 0.98V Max. forward impulse current: 15kA Electrical mounting: screw Mechanical mounting: screw |
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CS20-22MOF1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube Mounting: THT Type of thyristor: thyristor Case: ISOPLUS i4-pac™ x024c Max. off-state voltage: 2.2kV Load current: 18A Gate current: 250mA Max. forward impulse current: 200A Kind of package: tube |
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IXA37IF1200HJ | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 37A Pulsed collector current: 105A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 195W Kind of package: tube Gate charge: 106nC Technology: Planar; Sonic FRD™; XPT™ Case: PLUS247™ Collector-emitter voltage: 1.2kV |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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| MDNA240U2200ED |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 2.2kV; If: 240A; Ifsm: 1.5kA; module
Max. off-state voltage: 2.2kV
Load current: 240A
Case: E2-Pack
Version: module
Max. forward impulse current: 1.5kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 2.2kV; If: 240A; Ifsm: 1.5kA; module
Max. off-state voltage: 2.2kV
Load current: 240A
Case: E2-Pack
Version: module
Max. forward impulse current: 1.5kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of bridge rectifier: three-phase
товар відсутній
| IXTF200N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 156W
Case: ISOPLUS i4-pac™ x024d
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 156W
Case: ISOPLUS i4-pac™ x024d
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
товар відсутній
| IXTH20P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 406ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 406ns
на замовлення 389 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 734.1 грн |
| 2+ | 529.94 грн |
| 5+ | 500.18 грн |
| IXTN200N10L2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 178A
Pulsed drain current: 500A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Gate charge: 540nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 245ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 178A
Pulsed drain current: 500A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Gate charge: 540nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 245ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2853.55 грн |
| IXTR20P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -500V
Drain current: -13A
On-state resistance: 490mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -13A; 190W; 406ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 406ns
Power dissipation: 190W
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -500V
Drain current: -13A
On-state resistance: 490mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 876.39 грн |
| 2+ | 649.73 грн |
| 4+ | 614.15 грн |
| 30+ | 608.35 грн |
| IXTT20P50P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 406ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 406ns
товар відсутній
| CPC1976Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; THT; SIP4
Mounting: THT
Case: SIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 240V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; THT; SIP4
Mounting: THT
Case: SIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 240V AC
Control current max.: 50mA
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
на замовлення 169 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 394.02 грн |
| 6+ | 166.97 грн |
| 14+ | 158.26 грн |
| VUB160-16NOXT |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: V2-Pack
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Power dissipation: 695W
Type of module: IGBT
Technology: X2PT
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: V2-Pack
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Power dissipation: 695W
Type of module: IGBT
Technology: X2PT
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
товар відсутній
| IX4310N |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
товар відсутній
| IX4351NETR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver
Case: SO16-EP
Output current: -9...9A
Number of channels: 2
Supply voltage: -10...25V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver
Case: SO16-EP
Output current: -9...9A
Number of channels: 2
Supply voltage: -10...25V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
| IXFT150N17T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO268
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 233nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO268
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 233nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| MCO600-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; Y1; Ufmax: 1.34V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; Y1; Ufmax: 1.34V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCO600-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 600A; Y1; Ufmax: 1.34V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 600A; Y1; Ufmax: 1.34V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCO600-20io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCO600-22io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCO75-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 80A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 80A
Case: SOT227B
Max. forward voltage: 1.67V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 80A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 80A
Case: SOT227B
Max. forward voltage: 1.67V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCO801-14IO1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.4kV; 830A; Ifmax: 2335A; W73
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.4kV
Load current: 830A
Max. load current: 2335A
Case: W73
Max. forward voltage: 0.8V
Max. forward impulse current: 30kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.4kV; 830A; Ifmax: 2335A; W73
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.4kV
Load current: 830A
Max. load current: 2335A
Case: W73
Max. forward voltage: 0.8V
Max. forward impulse current: 30kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| VCO132-12io7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 130A; ECO-PAC 2; THT
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 130A
Case: ECO-PAC 2
Max. forward voltage: 1.3V
Gate current: 300/400mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 130A; ECO-PAC 2; THT
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 130A
Case: ECO-PAC 2
Max. forward voltage: 1.3V
Gate current: 300/400mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| VCO180-12io7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 180A; ECO-PAC 2; THT
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 180A
Case: ECO-PAC 2
Max. forward voltage: 1.1V
Gate current: 300/400mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 180A; ECO-PAC 2; THT
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 180A
Case: ECO-PAC 2
Max. forward voltage: 1.1V
Gate current: 300/400mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MEA300-06DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common anode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MEA95-06DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 0.6kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.36V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common anode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 0.6kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.36V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDA95-22N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 2.2kV; If: 120A; TO240AA; screw
Type of module: diode
Semiconductor structure: common anode; double
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common anode; 2.2kV; If: 120A; TO240AA; screw
Type of module: diode
Semiconductor structure: common anode; double
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.13V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
товар відсутній
| MMO230-12IO7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Leads: wire Ø 0.75mm
Type of module: thyristor
Mechanical mounting: screw
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Semiconductor structure: opposing
Load current: 105A
Max. forward voltage: 1.5V
Kind of package: bulk
Electrical mounting: THT
Max. off-state voltage: 1.2kV
Case: ECO-PAC 2
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Leads: wire Ø 0.75mm
Type of module: thyristor
Mechanical mounting: screw
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Semiconductor structure: opposing
Load current: 105A
Max. forward voltage: 1.5V
Kind of package: bulk
Electrical mounting: THT
Max. off-state voltage: 1.2kV
Case: ECO-PAC 2
товар відсутній
| MMO230-16IO7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Leads: wire Ø 0.75mm
Type of module: thyristor
Mechanical mounting: screw
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Semiconductor structure: opposing
Load current: 105A
Max. forward voltage: 1.5V
Kind of package: bulk
Electrical mounting: THT
Max. off-state voltage: 1.6kV
Case: ECO-PAC 2
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Leads: wire Ø 0.75mm
Type of module: thyristor
Mechanical mounting: screw
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Semiconductor structure: opposing
Load current: 105A
Max. forward voltage: 1.5V
Kind of package: bulk
Electrical mounting: THT
Max. off-state voltage: 1.6kV
Case: ECO-PAC 2
товар відсутній
| IXTY1R6N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
товар відсутній
| DSI30-08AS |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
товар відсутній
| LBA710 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 0.6Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 0.6Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 760.69 грн |
| 3+ | 338.29 грн |
| IXTP32N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO220AB; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO220AB; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
товар відсутній
| IXFX120N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX120N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1.13kW
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1.13kW
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
товар відсутній
| IXFX120N30T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
товар відсутній
| IXTH96N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 158ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; 625W; TO247-3; 158ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 158ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 473.77 грн |
| UGB6124AG |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 10.5kV; If: 1A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 10.5kV
Load current: 1A
Max. forward impulse current: 50A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: UGB1
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 10.5kV; If: 1A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 10.5kV
Load current: 1A
Max. forward impulse current: 50A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: UGB1
товар відсутній
| MCC225-12io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 220A; Y1; Ufmax: 1.14V
Case: Y1
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.14V
Load current: 220A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 220A; Y1; Ufmax: 1.14V
Case: Y1
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.14V
Load current: 220A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
| MCC225-14io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 220A; Y1; Ufmax: 1.14V
Case: Y1
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.14V
Load current: 220A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 220A; Y1; Ufmax: 1.14V
Case: Y1
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.14V
Load current: 220A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
| MCC225-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 220A; Y1; Ufmax: 1.14V
Case: Y1
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.14V
Load current: 220A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 220A; Y1; Ufmax: 1.14V
Case: Y1
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.14V
Load current: 220A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
| MCC225-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 220A; Y1; Ufmax: 1.14V
Case: Y1
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.14V
Load current: 220A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 220A; Y1; Ufmax: 1.14V
Case: Y1
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.14V
Load current: 220A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
| DMA30P1200HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 30A
Type of diode: rectifying
Max. forward impulse current: 370A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 30A
Type of diode: rectifying
Max. forward impulse current: 370A
товар відсутній
| DSEP29-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товар відсутній
| VUO68-12NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 70A
Max. forward impulse current: 300A
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 70A
Max. forward impulse current: 300A
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
товар відсутній
| FMD15-06KC5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Mounting: THT
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhanced
Gate-source voltage: ±20V
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Mounting: THT
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
Technology: HiPerDynFRED
Kind of channel: enhanced
Gate-source voltage: ±20V
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 954.57 грн |
| 3+ | 837.75 грн |
| 25+ | 805.81 грн |
| FMD47-06KC5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Mounting: THT
Features of semiconductor devices: super junction coolmos
Gate charge: 150nC
Technology: HiPerDynFRED
Kind of channel: enhanced
Gate-source voltage: ±20V
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 32A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Mounting: THT
Features of semiconductor devices: super junction coolmos
Gate charge: 150nC
Technology: HiPerDynFRED
Kind of channel: enhanced
Gate-source voltage: ±20V
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 32A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
товар відсутній
| FMD40-06KC |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 38A; 280W
Mounting: THT
Features of semiconductor devices: super junction coolmos
Gate charge: 250nC
Technology: HiPerDynFRED
Kind of channel: enhanced
Gate-source voltage: ±20V
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 38A; 280W
Mounting: THT
Features of semiconductor devices: super junction coolmos
Gate charge: 250nC
Technology: HiPerDynFRED
Kind of channel: enhanced
Gate-source voltage: ±20V
Topology: boost chopper
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| DSA10I100PM |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; 35W; TO220FP-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Power dissipation: 35W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 240A
Max. forward voltage: 0.71V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; 35W; TO220FP-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Power dissipation: 35W
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 240A
Max. forward voltage: 0.71V
товар відсутній
| DSA30C150HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 15Ax2; 85W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 330A
Max. forward voltage: 0.74V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 15Ax2; 85W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 330A
Max. forward voltage: 0.74V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.34 грн |
| 3+ | 181.49 грн |
| DSA30C150PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 330A
Max. forward voltage: 0.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 330A
Max. forward voltage: 0.75V
товар відсутній
| DSA30C200IB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; 85W; TO262; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO262
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 0.78V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; 85W; TO262; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO262
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 0.78V
на замовлення 399 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.46 грн |
| 10+ | 87.84 грн |
| 11+ | 79.13 грн |
| 30+ | 74.77 грн |
| 250+ | 73.32 грн |
| DSA30C200PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 320A
Max. forward voltage: 0.78V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 320A
Max. forward voltage: 0.78V
товар відсутній
| DSA30C45HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 85W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.62V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 85W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.62V
на замовлення 271 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.01 грн |
| 3+ | 164.06 грн |
| 7+ | 130.67 грн |
| 18+ | 124.14 грн |
| 120+ | 121.23 грн |
| DSA30C45PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 340A
Max. forward voltage: 0.63V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 340A
Max. forward voltage: 0.63V
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 106.32 грн |
| 5+ | 89.29 грн |
| 10+ | 78.4 грн |
| DSA30I150PA |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; 175W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Power dissipation: 175W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 390A
Max. forward voltage: 0.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; 175W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Power dissipation: 175W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 390A
Max. forward voltage: 0.8V
товар відсутній
| DSA50C100QB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 160W; TO3P; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO3P
Kind of package: tube
Max. forward impulse current: 440A
Max. forward voltage: 0.72V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 160W; TO3P; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO3P
Kind of package: tube
Max. forward impulse current: 440A
Max. forward voltage: 0.72V
на замовлення 223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.25 грн |
| 3+ | 185.12 грн |
| 6+ | 148.09 грн |
| 16+ | 139.38 грн |
| 120+ | 137.2 грн |
| IXFP26N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 601.2 грн |
| 3+ | 386.93 грн |
| 6+ | 365.88 грн |
| MDO500-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDO500-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.4kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.4kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.4kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.4kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDO500-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDO500-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDO500-20N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 2kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 2kV; If: 560A; Y1-CU; Ufmax: 0.98V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 0.98V
Max. forward impulse current: 15kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| CS20-22MOF1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: ISOPLUS i4-pac™ x024c
Max. off-state voltage: 2.2kV
Load current: 18A
Gate current: 250mA
Max. forward impulse current: 200A
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: ISOPLUS i4-pac™ x024c
Max. off-state voltage: 2.2kV
Load current: 18A
Gate current: 250mA
Max. forward impulse current: 200A
Kind of package: tube
товар відсутній
| IXA37IF1200HJ |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Technology: Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 105A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 195W
Kind of package: tube
Gate charge: 106nC
Technology: Planar; Sonic FRD™; XPT™
Case: PLUS247™
Collector-emitter voltage: 1.2kV
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 906.1 грн |
| 2+ | 596.01 грн |
| 4+ | 563.34 грн |