Технічний опис MMIX1F360N15T2 Littelfuse
Description: MOSFET N-CH 150V 235A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 235A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V, Power Dissipation (Max): 680W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V.
Інші пропозиції MMIX1F360N15T2
| Фото | Назва | Виробник | Інформація |
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| MMIX1F360N15T2 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 680W Polarisation: unipolar Drain current: 235A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A On-state resistance: 4.4mΩ Drain-source voltage: 150V кількість в упаковці: 1 шт |
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MMIX1F360N15T2 | Виробник : IXYS |
Description: MOSFET N-CH 150V 235A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 235A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V Power Dissipation (Max): 680W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
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MMIX1F360N15T2 | Виробник : IXYS |
MOSFET SMPD MOSFETs Power Device |
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| MMIX1F360N15T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 680W Polarisation: unipolar Drain current: 235A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A On-state resistance: 4.4mΩ Drain-source voltage: 150V |
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