IXTA1R6N50D2 IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 500V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 259.33 грн |
50+ | 198.16 грн |
100+ | 169.84 грн |
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Технічний опис IXTA1R6N50D2 IXYS
Description: MOSFET N-CH 500V 1.6A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Інші пропозиції IXTA1R6N50D2 за ціною від 173.53 грн до 274.82 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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IXTA1R6N50D2 | Виробник : IXYS | MOSFET N-CH MOSFETS (D2) 500V 1.6A |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXTA1R6N50D2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO263; 400ns Mounting: SMD Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO263 Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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IXTA1R6N50D2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO263; 400ns Mounting: SMD Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO263 Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube |
товар відсутній |