Фото | Назва | Виробник | Інформація |
Доступність |
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IXFR26N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Power dissipation: 320W Case: ISOPLUS247™ On-state resistance: 0.55Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
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IXFT16N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Power dissipation: 660W Case: TO268 On-state resistance: 0.95Ω Mounting: SMD Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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IXBH42N170A | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 188nC Kind of package: tube Turn-on time: 33ns Turn-off time: 308ns Features of semiconductor devices: high voltage |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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IXBN42N170A | IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B Technology: BiMOSFET™ Collector current: 21A Power dissipation: 313W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 265A Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Features of semiconductor devices: high voltage Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXBT42N170A | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268 Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 357W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 33ns Turn-off time: 308ns Features of semiconductor devices: high voltage |
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IXGF32N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 19A Power dissipation: 200W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 146nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
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IXGH32N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXGH32N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
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IXGT32N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
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IXGT32N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: SMD Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
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VUO55-16NO7 | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.03V Leads: M5 screws Case: PWS-B Mechanical mounting: screw |
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MDD255-16N1 | IXYS |
![]() Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V Max. off-state voltage: 1.6kV Load current: 270A Max. forward impulse current: 8.4kA Electrical mounting: screw Max. forward voltage: 1.4V Case: Y1-CU Mechanical mounting: screw Semiconductor structure: double series Type of module: diode Max. load current: 450A |
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DSI2x55-16A | IXYS |
![]() Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw Max. off-state voltage: 1.6kV Load current: 60A x2 Max. forward impulse current: 680A Electrical mounting: screw Max. forward voltage: 1.22V Case: SOT227B Mechanical mounting: screw Semiconductor structure: double independent Type of module: diode |
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IXGT25N160 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.6kV Collector current: 25A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 84nC Kind of package: tube Turn-on time: 283ns Turn-off time: 526ns Features of semiconductor devices: high voltage |
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DFE10I600PM | IXYS |
![]() Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W Mounting: THT Power dissipation: 30W Kind of package: tube Type of diode: rectifying Technology: FRED Case: TO220FP-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.38V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 110ns Max. forward impulse current: 100A |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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IXGH50N90B2 | IXYS |
![]() Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3 Mounting: THT Power dissipation: 400W Kind of package: tube Gate charge: 135nC Technology: HiPerFAST™; XPT™ Case: TO247-3 Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Turn-on time: 48ns Turn-off time: 820ns Type of transistor: IGBT |
на замовлення 179 шт: термін постачання 21-30 дні (днів) |
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IXFK32N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced |
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IXFK52N100X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Gate charge: 245nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 260ns |
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IXFR32N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Power dissipation: 570W Case: ISOPLUS247™ On-state resistance: 0.35Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFX32N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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CPC1335P | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT On-state resistance: 35Ω Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 0.1A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Case: DIP4 |
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CPC1335PTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT On-state resistance: 35Ω Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 0.1A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Case: DIP4 |
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IXTR16P60P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Gate charge: 92nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 440ns Drain-source voltage: -600V Drain current: -10A On-state resistance: 0.79Ω Type of transistor: P-MOSFET Power dissipation: 190W Polarisation: unipolar |
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IXFH120N15P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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IXFH120N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 890W Case: TO247-3 On-state resistance: 23mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 108ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXFH120N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO247-3 On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXFH120N30X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXFH150N15P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO247-3 On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
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IXFH180N20X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 180A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 94ns |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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IXTH44P15T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: THT Gate charge: 175nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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PLA170 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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PLA170S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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PLA170STR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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DSS10-0045B | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.46V Case: TO220AC Kind of package: tube Max. forward impulse current: 160A Power dissipation: 75W |
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DSS10-006A | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.62V Case: TO220AC Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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IXYH40N90C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 40A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 74nC Kind of package: tube Turn-on time: 81ns Turn-off time: 237ns |
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IXYX140N90C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 140A Power dissipation: 1.63kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 330nC Kind of package: tube Turn-on time: 122ns Turn-off time: 0.3µs |
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IXFZ520N075T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475 Type of transistor: N-MOSFET Mounting: SMD Case: DE475 On-state resistance: 1.6mΩ Kind of package: tube Power dissipation: 600W Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 420A |
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IXFL32N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Power dissipation: 520W Case: ISOPLUS i5-pac™ On-state resistance: 0.34Ω Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhanced |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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MCC162-18io1 | IXYS |
![]() Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Max. forward impulse current: 6.48kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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MCC162-18IO1B | IXYS |
![]() Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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LDA100 | IXYS |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6 Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Type of optocoupler: optocoupler |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
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LDA100S | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Trigger current: 50mA Type of optocoupler: optocoupler |
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LDA100STR | IXYS |
![]() Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Trigger current: 50mA Type of optocoupler: optocoupler |
на замовлення 737 шт: термін постачання 21-30 дні (днів) |
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IXXX200N65B4 | IXYS |
![]() Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX4™; Trench; XPT™ Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 517nC Collector-emitter voltage: 650V |
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VCO132-16io7 | IXYS |
![]() Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 130A Case: ECO-PAC 2 Max. forward voltage: 1.3V Gate current: 300/400mA Electrical mounting: THT Leads: wire Ø 1.5mm Kind of package: bulk Mechanical mounting: screw |
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IXFK160N30T | IXYS |
![]() Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 Type of transistor: N-MOSFET Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: TO264 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXFK180N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 180A Power dissipation: 1390W Case: TO264 On-state resistance: 12.9mΩ Mounting: THT Gate charge: 364nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXFK230N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 230A Power dissipation: 1670W Case: TO264 On-state resistance: 7.5mΩ Mounting: THT Gate charge: 358nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXFK240N15T2 | IXYS |
![]() Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264 Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Gate charge: 460nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns |
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DMA50I800HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2 Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 0.5kA Semiconductor structure: single diode Case: TO247-2 Mounting: THT Kind of package: tube Load current: 50A |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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DMA30E1800HA | IXYS |
![]() Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W Max. forward impulse current: 370A Kind of package: tube Type of diode: rectifying Semiconductor structure: single diode Load current: 30A Max. forward voltage: 1.25V Max. off-state voltage: 1.8kV Case: TO247-2 Mounting: THT Power dissipation: 210W |
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IXTP36N30P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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VMM650-01F | IXYS |
![]() Description: Module; transistor/transistor; 100V; 500A; Y3-Li; HiPerFET™; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 500A Case: Y3-Li Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.8mΩ Technology: HiPerFET™ Gate-source voltage: ±20V Mechanical mounting: screw |
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IXGK400N30A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264 Mounting: THT Collector-emitter voltage: 300V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.2kA Turn-on time: 0.1µs Turn-off time: 565ns Type of transistor: IGBT Power dissipation: 1kW Kind of package: tube Gate charge: 560nC Technology: GenX3™; PT Case: TO264 |
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IXGK75N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264 Mounting: THT Power dissipation: 780W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 410nC Technology: NPT Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 530A Turn-on time: 280ns Turn-off time: 725ns Type of transistor: IGBT |
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LBA127P | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LBA127PTR | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LBA127S | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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LBA127STR | IXYS |
![]() Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
IXFR26N120P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFT16N120P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXBH42N170A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
на замовлення 60 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1618.31 грн |
2+ | 1420.69 грн |
10+ | 1400.36 грн |
30+ | 1369.14 грн |
IXBN42N170A |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Technology: BiMOSFET™
Collector current: 21A
Power dissipation: 313W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Technology: BiMOSFET™
Collector current: 21A
Power dissipation: 313W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2371.96 грн |
IXBT42N170A |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
товар відсутній
IXGF32N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH32N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1282.14 грн |
2+ | 1125.95 грн |
IXGH32N170A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
товар відсутній
IXGT32N170 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
товар відсутній
IXGT32N170A |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
товар відсутній
VUO55-16NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.03V
Leads: M5 screws
Case: PWS-B
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.03V
Leads: M5 screws
Case: PWS-B
Mechanical mounting: screw
товар відсутній
MDD255-16N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. off-state voltage: 1.6kV
Load current: 270A
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. forward voltage: 1.4V
Case: Y1-CU
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
Max. load current: 450A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. off-state voltage: 1.6kV
Load current: 270A
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. forward voltage: 1.4V
Case: Y1-CU
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
Max. load current: 450A
товар відсутній
DSI2x55-16A |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.6kV
Load current: 60A x2
Max. forward impulse current: 680A
Electrical mounting: screw
Max. forward voltage: 1.22V
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: double independent
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.6kV
Load current: 60A x2
Max. forward impulse current: 680A
Electrical mounting: screw
Max. forward voltage: 1.22V
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: double independent
Type of module: diode
товар відсутній
IXGT25N160 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
товар відсутній
DFE10I600PM |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: FRED
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.38V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 110ns
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: FRED
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.38V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 110ns
Max. forward impulse current: 100A
на замовлення 81 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 100.91 грн |
10+ | 89.29 грн |
11+ | 79.85 грн |
30+ | 75.5 грн |
IXGH50N90B2 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: HiPerFAST™; XPT™
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Mounting: THT
Power dissipation: 400W
Kind of package: tube
Gate charge: 135nC
Technology: HiPerFAST™; XPT™
Case: TO247-3
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 48ns
Turn-off time: 820ns
Type of transistor: IGBT
на замовлення 179 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 594.16 грн |
3+ | 396.37 грн |
6+ | 374.59 грн |
IXFK32N100Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFK52N100X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
товар відсутній
IXFR32N100Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2435.29 грн |
IXFX32N100Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
CPC1335P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
On-state resistance: 35Ω
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
On-state resistance: 35Ω
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Case: DIP4
товар відсутній
CPC1335PTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
On-state resistance: 35Ω
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
On-state resistance: 35Ω
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Case: DIP4
товар відсутній
IXTR16P60P |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
товар відсутній
IXFH120N15P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 261 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 480.02 грн |
3+ | 400.72 грн |
6+ | 395.64 грн |
10+ | 380.4 грн |
IXFH120N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 802.12 грн |
2+ | 698.36 грн |
3+ | 667.88 грн |
4+ | 659.89 грн |
IXFH120N25X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 846.68 грн |
2+ | 655.53 грн |
3+ | 654.81 грн |
4+ | 619.24 грн |
IXFH120N30X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1173.47 грн |
2+ | 800.72 грн |
3+ | 756.44 грн |
IXFH150N15P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFH180N20X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 950.66 грн |
2+ | 789.11 грн |
3+ | 746.28 грн |
10+ | 731.03 грн |
IXTH44P15T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 441.71 грн |
3+ | 327.4 грн |
8+ | 309.26 грн |
30+ | 304.17 грн |
PLA170 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA170S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA170STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
DSS10-0045B |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 160A
Power dissipation: 75W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 160A
Power dissipation: 75W
товар відсутній
DSS10-006A |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
IXYH40N90C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
товар відсутній
IXYX140N90C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
товар відсутній
IXFZ520N075T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Mounting: SMD
Case: DE475
On-state resistance: 1.6mΩ
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 420A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Mounting: SMD
Case: DE475
On-state resistance: 1.6mΩ
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 420A
товар відсутній
IXFL32N120P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3422.69 грн |
25+ | 3117.23 грн |
MCC162-18io1 |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4766.59 грн |
MCC162-18IO1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
LDA100 |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Type of optocoupler: optocoupler
на замовлення 137 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 48.47 грн |
11+ | 33.97 грн |
25+ | 29.91 грн |
31+ | 28.31 грн |
83+ | 26.79 грн |
LDA100S |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
товар відсутній
LDA100STR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
на замовлення 737 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 66.45 грн |
8+ | 50.38 грн |
25+ | 39.35 грн |
30+ | 28.53 грн |
83+ | 27.01 грн |
250+ | 26.21 грн |
IXXX200N65B4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
товар відсутній
VCO132-16io7 |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 130A
Case: ECO-PAC 2
Max. forward voltage: 1.3V
Gate current: 300/400mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 130A
Case: ECO-PAC 2
Max. forward voltage: 1.3V
Gate current: 300/400mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
IXFK160N30T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
IXFK180N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1069.49 грн |
3+ | 938.65 грн |
IXFK230N20T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1420.52 грн |
2+ | 1247.18 грн |
3+ | 1246.46 грн |
IXFK240N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
товар відсутній
DMA50I800HA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 0.5kA
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 50A
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 0.5kA
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 50A
на замовлення 290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 268.16 грн |
3+ | 224.32 грн |
5+ | 178.58 грн |
14+ | 169.15 грн |
DMA30E1800HA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. forward impulse current: 370A
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. forward voltage: 1.25V
Max. off-state voltage: 1.8kV
Case: TO247-2
Mounting: THT
Power dissipation: 210W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. forward impulse current: 370A
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. forward voltage: 1.25V
Max. off-state voltage: 1.8kV
Case: TO247-2
Mounting: THT
Power dissipation: 210W
товар відсутній
IXTP36N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
VMM650-01F |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 500A; Y3-Li; HiPerFET™; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 500A
Case: Y3-Li
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 500A; Y3-Li; HiPerFET™; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 500A
Case: Y3-Li
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
IXGK400N30A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Mounting: THT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Turn-on time: 0.1µs
Turn-off time: 565ns
Type of transistor: IGBT
Power dissipation: 1kW
Kind of package: tube
Gate charge: 560nC
Technology: GenX3™; PT
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Mounting: THT
Collector-emitter voltage: 300V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Turn-on time: 0.1µs
Turn-off time: 565ns
Type of transistor: IGBT
Power dissipation: 1kW
Kind of package: tube
Gate charge: 560nC
Technology: GenX3™; PT
Case: TO264
товар відсутній
IXGK75N250 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Mounting: THT
Power dissipation: 780W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 410nC
Technology: NPT
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 530A
Turn-on time: 280ns
Turn-off time: 725ns
Type of transistor: IGBT
товар відсутній
LBA127P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
LBA127PTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
LBA127S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 657.49 грн |
3+ | 291.83 грн |
9+ | 276.59 грн |
LBA127STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
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