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IXTR140P10T IXYS
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Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
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Технічний опис IXTR140P10T IXYS
Category: THT P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns, Type of transistor: P-MOSFET, Technology: TrenchP™, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -110A, Power dissipation: 270W, Case: ISOPLUS247™, Gate-source voltage: ±15V, On-state resistance: 11mΩ, Mounting: THT, Gate charge: 400nC, Kind of package: tube, Kind of channel: enhanced, Reverse recovery time: 130ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTR140P10T
Фото | Назва | Виробник | Інформація |
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IXTR140P10T | Виробник : IXYS |
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товар відсутній |
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IXTR140P10T | Виробник : IXYS |
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товар відсутній |
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IXTR140P10T | Виробник : IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -110A Power dissipation: 270W Case: ISOPLUS247™ Gate-source voltage: ±15V On-state resistance: 11mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
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