IXTR170P10P IXYS
Виробник: IXYS
Description: MOSFET P-CH 100V 108A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Description: MOSFET P-CH 100V 108A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1597.39 грн |
30+ | 1274.98 грн |
120+ | 1195.28 грн |
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Технічний опис IXTR170P10P IXYS
Description: MOSFET P-CH 100V 108A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V.
Інші пропозиції IXTR170P10P за ціною від 1050.77 грн до 1711.34 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXTR170P10P | Виробник : IXYS | MOSFETs -108.0 Amps -100V 0.013 Rds |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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IXTR170P10P | Виробник : Littelfuse | Trans MOSFET P-CH Si 100V 108A 3-Pin(3+Tab) ISOPLUS 247 |
товар відсутній |
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IXTR170P10P | Виробник : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Gate charge: 240nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 176ns Drain-source voltage: -100V Drain current: -100A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Power dissipation: 312W Polarisation: unipolar кількість в упаковці: 300 шт |
товар відсутній |
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IXTR170P10P | Виробник : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Gate charge: 240nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 176ns Drain-source voltage: -100V Drain current: -100A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Power dissipation: 312W Polarisation: unipolar |
товар відсутній |