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IXXK110N65B4H1 IXXK110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)
1+1491.78 грн
2+ 1359.99 грн
IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60B3 IXXK200N60B3 IXYS IXXK(X)200N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60C3 IXXK200N60C3 IXYS IXXK(X)200N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 143ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
кількість в упаковці: 1 шт
товар відсутній
IXXK200N65B4 IXXK200N65B4 IXYS IXXK(x)200N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Case: TO264
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 517nC
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60B3 IXXK300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60C3 IXXK300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXXN100N60B3H1 IXXN100N60B3H1 IXYS IXXN100N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3 IXXN200N60B3 IXYS IXXN200N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3H1 IXXN200N60B3H1 IXYS IXXN200N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60C3H1 IXXN200N60C3H1 IXYS IXXN200N60C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN200N65A4 IXXN200N65A4 IXYS IXXN200N65A4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Case: SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX4™; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXP12N65B4D1 IXXP12N65B4D1 IXYS IXXP12N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
кількість в упаковці: 1 шт
товар відсутній
IXXP50N60B3 IXXP50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXQ30N60B3M IXXQ30N60B3M IXYS IXXQ30N60B3M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 292ns
кількість в упаковці: 1 шт
товар відсутній
IXXR100N60B3H1 IXXR100N60B3H1 IXYS IXXR100N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 400W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 70A
Power dissipation: 455W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXX100N60B3H1 IXXX100N60B3H1 IXYS IXXK(X)100N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX100N60C3H1 IXXX100N60C3H1 IXYS IXXK100N60C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 340A
Turn-on time: 95ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 150nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXX140N65B4H1 IXXX140N65B4H1 IXYS IXXX140N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
кількість в упаковці: 1 шт
товар відсутній
IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXX160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXX200N60B3 IXXX200N60B3 IXYS IXXK(X)200N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 315nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX200N65B4 IXXX200N65B4 IXYS IXXK(x)200N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IXXX300N60B3 IXXX300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 300A
Power dissipation: 2.3kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.14kA
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Turn-on time: 137ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXXX300N60C3 IXXX300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 300A
Power dissipation: 2.3kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1075A
Mounting: THT
Gate charge: 438nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 278ns
кількість в упаковці: 1 шт
товар відсутній
IXYA15N65C3D1 IXYA15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
кількість в упаковці: 1 шт
на замовлення 260 шт:
термін постачання 14-21 дні (днів)
2+220.87 грн
3+ 192.22 грн
7+ 146 грн
19+ 138.17 грн
Мінімальне замовлення: 2
IXYA20N120C3HV IXYA20N120C3HV IXYS IXY_20N120C3_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3 IXYA20N65C3 IXYS IXYA(H)20N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3D1 IXYA20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
на замовлення 176 шт:
термін постачання 14-21 дні (днів)
1+315.39 грн
3+ 273.44 грн
5+ 210.3 грн
14+ 198.14 грн
IXYA50N65C3 IXYA50N65C3 IXYS IXY_50N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
1+590.53 грн
3+ 407 грн
8+ 370.2 грн
IXYA8N250CHV IXYS littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf IXYA8N250CHV SMD IGBT transistors
товар відсутній
IXYA8N90C3D1 IXYA8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
кількість в упаковці: 1 шт
товар відсутній
IXYB82N120C3H1 IXYB82N120C3H1 IXYS IXYB82N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)
1+1971.88 грн
2+ 1797.67 грн
IXYF30N450 IXYS media?resourcetype=datasheets&itemid=4f39dc18-3fb1-4634-aa0a-11afa7e8bce7&filename=littelfuse-discrete-igbts-xpt-ixyf30n450-datasheet IXYF30N450 THT IGBT transistors
товар відсутній
IXYH100N65A3 IXYH100N65A3 IXYS IXYH100N65A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
кількість в упаковці: 1 шт
товар відсутній
IXyH100N65C3 IXyH100N65C3 IXYS IXYH100N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXYH10N170C IXYS littelfuse_discrete_igbts_xpt_ixyh10n170c_datasheet.pdf.pdf IXYH10N170C THT IGBT transistors
товар відсутній
IXYH10N170CV1 IXYS DS100784(IXYH10N170CV1)_.pdf IXYH10N170CV1 THT IGBT transistors
товар відсутній
IXYH12N250C IXYS DS100791(IXYH12N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 48A
Turn-on time: 12ns
Turn-off time: 167ns
кількість в упаковці: 1 шт
товар відсутній
IXYH12N250CV1HV IXYH12N250CV1HV IXYS IXYH12N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 80A
Turn-on time: 32ns
Turn-off time: 333ns
кількість в упаковці: 1 шт
товар відсутній
IXYH16N170C IXYS littelfuse_discrete_igbts_xpt_ixyh16n170c_datasheet.pdf.pdf IXYH16N170C THT IGBT transistors
товар відсутній
IXYH16N170CV1 IXYS littelfuse_discrete_igbts_xpt_ixyh16n170cv1_datasheet.pdf.pdf IXYH16N170CV1 THT IGBT transistors
товар відсутній
IXYH16N250C IXYS DS100793A(IXYH16N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH16N250CV1HV IXYH16N250CV1HV IXYS IXYH16N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH20N120C3 IXYH20N120C3 IXYS IXYH(P)20N120C3_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 300 шт
товар відсутній
IXYH20N120C3D1 IXYH20N120C3D1 IXYS IXYH20N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
на замовлення 289 шт:
термін постачання 14-21 дні (днів)
1+1057.53 грн
2+ 733.69 грн
3+ 705.65 грн
4+ 667.41 грн
IXYH20N65C3 IXYH20N65C3 IXYS IXYA(H)20N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYH24N170C IXYS IXYH24N170C.pdf IXYH24N170C THT IGBT transistors
товар відсутній
IXYH24N170CV1 IXYS IXYH24N170CV1 THT IGBT transistors
товар відсутній
IXYH24N90C3 IXYH24N90C3 IXYS IXYH24N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYH24N90C3D1 IXYH24N90C3D1 IXYS IXYH24N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYH25N250CHV IXYS littelfuse_discrete_igbts_xpt_ixy_25n250chv_datasheet.pdf.pdf IXYH25N250CHV THT IGBT transistors
товар відсутній
IXYH30N120C3 IXYH30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 1 шт
товар відсутній
IXYH30N120C3D1 IXYH30N120C3D1 IXYS IXYH30N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 300 шт
товар відсутній
IXYH30N170C IXYS littelfuse_discrete_igbts_xpt_ixyh30n170c_datasheet.pdf.pdf IXYH30N170C THT IGBT transistors
товар відсутній
IXXK110N65B4H1 IXX_110N65B4H1.pdf
IXXK110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1491.78 грн
2+ 1359.99 грн
IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60B3 IXXK(X)200N60B3.pdf
IXXK200N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60C3 IXXK(X)200N60C3.pdf
IXXK200N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 143ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
кількість в упаковці: 1 шт
товар відсутній
IXXK200N65B4 IXXK(x)200N65B4.pdf
IXXK200N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Case: TO264
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 517nC
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60B3 IXXK(X)300N60B3.pdf
IXXK300N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60C3 IXXK(x)300N60C3.pdf
IXXK300N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXXN100N60B3H1 IXXN100N60B3H1.pdf
IXXN100N60B3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3 IXXN200N60B3.pdf
IXXN200N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3H1 IXXN200N60B3H1.pdf
IXXN200N60B3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60C3H1 IXXN200N60C3H1.pdf
IXXN200N60C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN200N65A4 IXXN200N65A4.pdf
IXXN200N65A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Case: SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX4™; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXP12N65B4D1 IXXP12N65B4D1.pdf
IXXP12N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
кількість в упаковці: 1 шт
товар відсутній
IXXP50N60B3 IXXA(p,h)50N60B3.pdf
IXXP50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXQ30N60B3M IXXQ30N60B3M.pdf
IXXQ30N60B3M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 292ns
кількість в упаковці: 1 шт
товар відсутній
IXXR100N60B3H1 IXXR100N60B3H1.pdf
IXXR100N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 400W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 70A
Power dissipation: 455W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXX100N60B3H1 IXXK(X)100N60B3H1.pdf
IXXX100N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX100N60C3H1 IXXK100N60C3H1.pdf
IXXX100N60C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 340A
Turn-on time: 95ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 150nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXX140N65B4H1 IXXX140N65B4H1.pdf
IXXX140N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
кількість в упаковці: 1 шт
товар відсутній
IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXX160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXX200N60B3 IXXK(X)200N60B3.pdf
IXXX200N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 315nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX200N65B4 IXXK(x)200N65B4.pdf
IXXX200N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IXXX300N60B3 IXXK(X)300N60B3.pdf
IXXX300N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 300A
Power dissipation: 2.3kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.14kA
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Turn-on time: 137ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXXX300N60C3 IXXK(x)300N60C3.pdf
IXXX300N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 300A
Power dissipation: 2.3kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1075A
Mounting: THT
Gate charge: 438nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 278ns
кількість в упаковці: 1 шт
товар відсутній
IXYA15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYA15N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
кількість в упаковці: 1 шт
на замовлення 260 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+220.87 грн
3+ 192.22 грн
7+ 146 грн
19+ 138.17 грн
Мінімальне замовлення: 2
IXYA20N120C3HV IXY_20N120C3_HV.pdf
IXYA20N120C3HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3 IXYA(H)20N65C3.pdf
IXYA20N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3D1 IXY_20N65C3D1.pdf
IXYA20N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
на замовлення 176 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+315.39 грн
3+ 273.44 грн
5+ 210.3 грн
14+ 198.14 грн
IXYA50N65C3 IXY_50N65C3.pdf
IXYA50N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+590.53 грн
3+ 407 грн
8+ 370.2 грн
IXYA8N250CHV littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf
Виробник: IXYS
IXYA8N250CHV SMD IGBT transistors
товар відсутній
IXYA8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYA8N90C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
кількість в упаковці: 1 шт
товар відсутній
IXYB82N120C3H1 IXYB82N120C3H1.pdf
IXYB82N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1971.88 грн
2+ 1797.67 грн
IXYF30N450 media?resourcetype=datasheets&itemid=4f39dc18-3fb1-4634-aa0a-11afa7e8bce7&filename=littelfuse-discrete-igbts-xpt-ixyf30n450-datasheet
Виробник: IXYS
IXYF30N450 THT IGBT transistors
товар відсутній
IXYH100N65A3 IXYH100N65A3.pdf
IXYH100N65A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
кількість в упаковці: 1 шт
товар відсутній
IXyH100N65C3 IXYH100N65C3.pdf
IXyH100N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXYH10N170C littelfuse_discrete_igbts_xpt_ixyh10n170c_datasheet.pdf.pdf
Виробник: IXYS
IXYH10N170C THT IGBT transistors
товар відсутній
IXYH10N170CV1 DS100784(IXYH10N170CV1)_.pdf
Виробник: IXYS
IXYH10N170CV1 THT IGBT transistors
товар відсутній
IXYH12N250C DS100791(IXYH12N250C)_.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 48A
Turn-on time: 12ns
Turn-off time: 167ns
кількість в упаковці: 1 шт
товар відсутній
IXYH12N250CV1HV IXYH12N250CV1HV.pdf
IXYH12N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 80A
Turn-on time: 32ns
Turn-off time: 333ns
кількість в упаковці: 1 шт
товар відсутній
IXYH16N170C littelfuse_discrete_igbts_xpt_ixyh16n170c_datasheet.pdf.pdf
Виробник: IXYS
IXYH16N170C THT IGBT transistors
товар відсутній
IXYH16N170CV1 littelfuse_discrete_igbts_xpt_ixyh16n170cv1_datasheet.pdf.pdf
Виробник: IXYS
IXYH16N170CV1 THT IGBT transistors
товар відсутній
IXYH16N250C DS100793A(IXYH16N250C)_.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH16N250CV1HV IXYH16N250CV1HV.pdf
IXYH16N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH20N120C3 IXYH(P)20N120C3_HV.pdf
IXYH20N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 300 шт
товар відсутній
IXYH20N120C3D1 IXYH20N120C3D1.pdf
IXYH20N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
на замовлення 289 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1057.53 грн
2+ 733.69 грн
3+ 705.65 грн
4+ 667.41 грн
IXYH20N65C3 IXYA(H)20N65C3.pdf
IXYH20N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYH24N170C IXYH24N170C.pdf
Виробник: IXYS
IXYH24N170C THT IGBT transistors
товар відсутній
IXYH24N170CV1
Виробник: IXYS
IXYH24N170CV1 THT IGBT transistors
товар відсутній
IXYH24N90C3 IXYH24N90C3.pdf
IXYH24N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYH24N90C3D1 IXYH24N90C3D1.pdf
IXYH24N90C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYH25N250CHV littelfuse_discrete_igbts_xpt_ixy_25n250chv_datasheet.pdf.pdf
Виробник: IXYS
IXYH25N250CHV THT IGBT transistors
товар відсутній
IXYH30N120C3 IXY_30N120C3.pdf
IXYH30N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 1 шт
товар відсутній
IXYH30N120C3D1 IXYH30N120C3D1.pdf
IXYH30N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 300 шт
товар відсутній
IXYH30N170C littelfuse_discrete_igbts_xpt_ixyh30n170c_datasheet.pdf.pdf
Виробник: IXYS
IXYH30N170C THT IGBT transistors
товар відсутній
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