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IPP60R600C6XKSA1 IPP60R600C6XKSA1 INFINEON TECHNOLOGIES IPP60R600C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP60R600E6XKSA1 IPP60R600E6XKSA1 INFINEON TECHNOLOGIES IPP60R600E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP60R600P7XKSA1 IPP60R600P7XKSA1 INFINEON TECHNOLOGIES IPP60R600P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPP60R950C6XKSA1 IPP60R950C6XKSA1 INFINEON TECHNOLOGIES IPP60R950C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 500 шт
товар відсутній
IPP65R045C7XKSA1 IPP65R045C7XKSA1 INFINEON TECHNOLOGIES IPP65R045C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R065C7XKSA1 IPP65R065C7XKSA1 INFINEON TECHNOLOGIES IPP65R065C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R095C7XKSA1 IPP65R095C7XKSA1 INFINEON TECHNOLOGIES IPP65R095C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R110CFDXKSA1 IPP65R110CFDXKSA1 INFINEON TECHNOLOGIES IPP65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R125C7XKSA1 IPP65R125C7XKSA1 INFINEON TECHNOLOGIES IPP65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R150CFDXKSA1 IPP65R150CFDXKSA1 INFINEON TECHNOLOGIES IPP65R150CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 195.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES IPP65R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R190C7FKSA1 IPP65R190C7FKSA1 INFINEON TECHNOLOGIES IPP65R190C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R190CFDXKSA1 IPP65R190CFDXKSA1 INFINEON TECHNOLOGIES IPP65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R190E6XKSA1 IPP65R190E6XKSA1 INFINEON TECHNOLOGIES IPP65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R225C7XKSA1 IPP65R225C7XKSA1 INFINEON TECHNOLOGIES IPP65R225C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R280E6XKSA1 IPP65R280E6XKSA1 INFINEON TECHNOLOGIES IPP65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 INFINEON TECHNOLOGIES IPP65R310CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R420CFDXKSA1 IPP65R420CFDXKSA1 INFINEON TECHNOLOGIES IPP65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP77N06S212AKSA2 IPP77N06S212AKSA2 INFINEON TECHNOLOGIES IPP77N06S212.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 158W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP80N04S4L04AKSA1 IPP80N04S4L04AKSA1 INFINEON TECHNOLOGIES IPx80N04S4L-04.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP80N06S2H5AKSA2 IPP80N06S2H5AKSA2 INFINEON TECHNOLOGIES IPx80N06S2-H5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP80N06S2L07AKSA2 IPP80N06S2L07AKSA2 INFINEON TECHNOLOGIES IPP80N06S2L07-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES IPP80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 383 шт:
термін постачання 14-21 дні (днів)
3+104.38 грн
10+ 91.7 грн
12+ 87.29 грн
33+ 82.88 грн
Мінімальне замовлення: 3
IPP80R280P7XKSA1 IPP80R280P7XKSA1 INFINEON TECHNOLOGIES IPP80R280P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPP80R360P7XKSA1 IPP80R360P7XKSA1 INFINEON TECHNOLOGIES IPP80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)
2+243.09 грн
3+ 207.85 грн
6+ 186.93 грн
10+ 180.76 грн
16+ 177.23 грн
50+ 170.18 грн
Мінімальне замовлення: 2
IPP80R450P7XKSA1 IPP80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Pulsed drain current: 29A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 14-21 дні (днів)
2+207.95 грн
3+ 181.3 грн
8+ 134.02 грн
22+ 126.97 грн
Мінімальне замовлення: 2
IPP80R600P7XKSA1 IPP80R600P7XKSA1 INFINEON TECHNOLOGIES IPP80R600P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPP80R750P7XKSA1 IPP80R750P7XKSA1 INFINEON TECHNOLOGIES IPP80R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPP90R340C3XKSA1 IPP90R340C3XKSA1 INFINEON TECHNOLOGIES IPP90R340C3XKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPS65R1K4C6AKMA1 INFINEON TECHNOLOGIES DS_IPS65R1K4C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e8ec2f0504f IPS65R1K4C6AKMA1 THT N channel transistors
товар відсутній
IPS65R1K5CEAKMA1 INFINEON TECHNOLOGIES Infineon-IPS65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7acf11e1e92 INFN-S-A0001751085-1.pdf?t.download=true&u=5oefqw IPS65R1K5CEAKMA1 THT N channel transistors
на замовлення 970 шт:
термін постачання 14-21 дні (днів)
10+28.49 грн
52+ 19.84 грн
143+ 18.69 грн
Мінімальне замовлення: 10
IPS65R400CEAKMA1 IPS65R400CEAKMA1 INFINEON TECHNOLOGIES IPS65R400CE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPS65R950C6AKMA1 IPS65R950C6AKMA1 INFINEON TECHNOLOGIES IPS65R950C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPS70R1K4P7SAKMA1 IPS70R1K4P7SAKMA1 INFINEON TECHNOLOGIES IPS70R1K4P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 4.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES IPS70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPS80R600P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 IPS80R600P7 THT N channel transistors
товар відсутній
IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)
5+59.52 грн
22+ 47.26 грн
60+ 44.7 грн
Мінімальне замовлення: 5
IPT004N03LATMA1 IPT004N03LATMA1 INFINEON TECHNOLOGIES IPT004N03L-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Mounting: SMD
Gate charge: 53nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2kA
Technology: OptiMOS™
Case: PG-HSOF-8
Drain-source voltage: 30V
Drain current: 300A
On-state resistance: 0.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tape
кількість в упаковці: 1 шт
товар відсутній
IPT007N06NATMA1 IPT007N06NATMA1 INFINEON TECHNOLOGIES IPT007N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPT012N08N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9 IPT012N08N5ATMA1 SMD N channel transistors
товар відсутній
IPT015N10N5ATMA1 IPT015N10N5ATMA1 INFINEON TECHNOLOGIES IPT015N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES IPT020N10N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPT029N08N5ATMA1 IPT029N08N5ATMA1 INFINEON TECHNOLOGIES IPT029N08N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
On-state resistance: 2.9mΩ
Mounting: SMD
Pulsed drain current: 676A
Power dissipation: 167W
Gate charge: 70nC
Technology: OptiMOS™ 5
кількість в упаковці: 1 шт
товар відсутній
IPT059N15N3ATMA1 IPT059N15N3ATMA1 INFINEON TECHNOLOGIES IPT059N15N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPT210N25NFDATMA1 IPT210N25NFDATMA1 INFINEON TECHNOLOGIES IPT210N25NFD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tape
Gate charge: 86nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: PG-HSOF-8
Drain-source voltage: 250V
Drain current: 54A
кількість в упаковці: 2000 шт
товар відсутній
IPT60R022S7XTMA1 INFINEON TECHNOLOGIES IPT60R022S7XTMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel
Case: PG-HSOF-8
Power dissipation: 390W
Gate charge: 31nC
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
IPT60R040S7XTMA1 IPT60R040S7XTMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Mounting: THT
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 207A
Case: TO220
Drain-source voltage: 600V
Drain current: 13A
кількість в упаковці: 2000 шт
товар відсутній
IPT60R065S7XTMA1 IPT60R065S7XTMA1 INFINEON TECHNOLOGIES Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Drain-source voltage: 600V
Drain current: 8A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Mounting: THT
Case: TO220
кількість в упаковці: 2000 шт
товар відсутній
IPU50R1K4CEBKMA1 IPU50R1K4CEBKMA1 INFINEON TECHNOLOGIES IPU50R1K4CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.1A
Power dissipation: 25W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPU80R1K0CEBKMA1 IPU80R1K0CEBKMA1 INFINEON TECHNOLOGIES IPU80R1K0CE-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 948 шт:
термін постачання 14-21 дні (днів)
6+48.8 грн
Мінімальне замовлення: 6
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES IPU80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 443 шт:
термін постачання 14-21 дні (днів)
5+62.67 грн
6+ 53.84 грн
25+ 46.03 грн
26+ 40.12 грн
71+ 37.91 грн
Мінімальне замовлення: 5
IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 INFINEON TECHNOLOGIES IPU80R1K4P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1203 шт:
термін постачання 14-21 дні (днів)
5+62.67 грн
6+ 49.63 грн
25+ 41.88 грн
29+ 36.33 грн
78+ 34.39 грн
Мінімальне замовлення: 5
IPU80R2K0P7AKMA1 IPU80R2K0P7AKMA1 INFINEON TECHNOLOGIES IPU80R2K0P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+284.87 грн
5+ 67.76 грн
18+ 59.08 грн
49+ 55.55 грн
IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 INFINEON TECHNOLOGIES IPU80R2K4P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPU80R3K3P7AKMA1 IPU80R3K3P7AKMA1 INFINEON TECHNOLOGIES IPU80R3K3P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1 INFINEON TECHNOLOGIES IPU80R4K5P7AKMA1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 2.6A
Power dissipation: 13W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1469 шт:
термін постачання 14-21 дні (днів)
3+107.3 грн
5+ 56.59 грн
25+ 41.27 грн
69+ 38.97 грн
Мінімальне замовлення: 3
IPU80R600P7AKMA1 IPU80R600P7AKMA1 INFINEON TECHNOLOGIES IPU80R600P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
2+184.22 грн
5+ 159.32 грн
7+ 151.66 грн
19+ 143.72 грн
25+ 142.84 грн
Мінімальне замовлення: 2
IPU80R750P7AKMA1 IPU80R750P7AKMA1 INFINEON TECHNOLOGIES IPU80R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES IPU80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 344 шт:
термін постачання 14-21 дні (днів)
4+74.07 грн
5+ 64.1 грн
22+ 47.61 грн
60+ 44.97 грн
Мінімальне замовлення: 4
IPP60R600C6XKSA1 IPP60R600C6-DTE.pdf
IPP60R600C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP60R600E6XKSA1 IPP60R600E6-DTE.pdf
IPP60R600E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP60R600P7XKSA1 IPP60R600P7.pdf
IPP60R600P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPP60R950C6XKSA1 IPP60R950C6-DTE.pdf
IPP60R950C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 500 шт
товар відсутній
IPP65R045C7XKSA1 IPP65R045C7-DTE.pdf
IPP65R045C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R065C7XKSA1 IPP65R065C7-DTE.pdf
IPP65R065C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R095C7XKSA1 IPP65R095C7-DTE.pdf
IPP65R095C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
IPP65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R110CFDXKSA1 IPP65R110CFD-DTE.pdf
IPP65R110CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R125C7XKSA1 IPP65R125C7-DTE.pdf
IPP65R125C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R150CFDXKSA1 IPP65R150CFD-DTE.pdf
IPP65R150CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 195.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R190C6XKSA1 IPP65R190C6-DTE.pdf
IPP65R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R190C7FKSA1 IPP65R190C7-DTE.pdf
IPP65R190C7FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R190CFDXKSA1 IPP65R190CFD-DTE.pdf
IPP65R190CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R190E6XKSA1 IPP65R190E6-DTE.pdf
IPP65R190E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R225C7XKSA1 IPP65R225C7-DTE.pdf
IPP65R225C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R280E6XKSA1 IPP65R280E6-DTE.pdf
IPP65R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R310CFDXKSA1 IPP65R310CFD-DTE.pdf
IPP65R310CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R420CFDXKSA1 IPP65R420CFD-DTE.pdf
IPP65R420CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP77N06S212AKSA2 IPP77N06S212.pdf
IPP77N06S212AKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 158W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP80N04S4L04AKSA1 IPx80N04S4L-04.pdf
IPP80N04S4L04AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP80N06S2H5AKSA2 IPx80N06S2-H5.pdf
IPP80N06S2H5AKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP80N06S2L07AKSA2 IPP80N06S2L07-DTE.pdf
IPP80N06S2L07AKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP80R1K2P7XKSA1 IPP80R1K2P7.pdf
IPP80R1K2P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 383 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+104.38 грн
10+ 91.7 грн
12+ 87.29 грн
33+ 82.88 грн
Мінімальне замовлення: 3
IPP80R280P7XKSA1 IPP80R280P7.pdf
IPP80R280P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPP80R360P7XKSA1 IPP80R360P7.pdf
IPP80R360P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+243.09 грн
3+ 207.85 грн
6+ 186.93 грн
10+ 180.76 грн
16+ 177.23 грн
50+ 170.18 грн
Мінімальне замовлення: 2
IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
IPP80R450P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Pulsed drain current: 29A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+207.95 грн
3+ 181.3 грн
8+ 134.02 грн
22+ 126.97 грн
Мінімальне замовлення: 2
IPP80R600P7XKSA1 IPP80R600P7.pdf
IPP80R600P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPP80R750P7XKSA1 IPP80R750P7.pdf
IPP80R750P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPP90R340C3XKSA1 IPP90R340C3XKSA1-DTE.pdf
IPP90R340C3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPS65R1K4C6AKMA1 DS_IPS65R1K4C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e8ec2f0504f
Виробник: INFINEON TECHNOLOGIES
IPS65R1K4C6AKMA1 THT N channel transistors
товар відсутній
IPS65R1K5CEAKMA1 Infineon-IPS65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7acf11e1e92 INFN-S-A0001751085-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
IPS65R1K5CEAKMA1 THT N channel transistors
на замовлення 970 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
10+28.49 грн
52+ 19.84 грн
143+ 18.69 грн
Мінімальне замовлення: 10
IPS65R400CEAKMA1 IPS65R400CE.pdf
IPS65R400CEAKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPS65R950C6AKMA1 IPS65R950C6-DTE.pdf
IPS65R950C6AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPS70R1K4P7SAKMA1 IPS70R1K4P7S.pdf
IPS70R1K4P7SAKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 4.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPS70R360P7SAKMA1 IPS70R360P7S.pdf
IPS70R360P7SAKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPS80R600P7AKMA1 Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394
Виробник: INFINEON TECHNOLOGIES
IPS80R600P7 THT N channel transistors
товар відсутній
IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
5+59.52 грн
22+ 47.26 грн
60+ 44.7 грн
Мінімальне замовлення: 5
IPT004N03LATMA1 IPT004N03L-DTE.pdf
IPT004N03LATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Mounting: SMD
Gate charge: 53nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2kA
Technology: OptiMOS™
Case: PG-HSOF-8
Drain-source voltage: 30V
Drain current: 300A
On-state resistance: 0.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tape
кількість в упаковці: 1 шт
товар відсутній
IPT007N06NATMA1 IPT007N06N-DTE.pdf
IPT007N06NATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPT012N08N5ATMA1 Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9
Виробник: INFINEON TECHNOLOGIES
IPT012N08N5ATMA1 SMD N channel transistors
товар відсутній
IPT015N10N5ATMA1 IPT015N10N5-DTE.pdf
IPT015N10N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
IPT020N10N3ATMA1 IPT020N10N3-DTE.pdf
IPT020N10N3ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPT029N08N5ATMA1 IPT029N08N5.pdf
IPT029N08N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
On-state resistance: 2.9mΩ
Mounting: SMD
Pulsed drain current: 676A
Power dissipation: 167W
Gate charge: 70nC
Technology: OptiMOS™ 5
кількість в упаковці: 1 шт
товар відсутній
IPT059N15N3ATMA1 IPT059N15N3-DTE.pdf
IPT059N15N3ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPT210N25NFDATMA1 IPT210N25NFD.pdf
IPT210N25NFDATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tape
Gate charge: 86nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: PG-HSOF-8
Drain-source voltage: 250V
Drain current: 54A
кількість в упаковці: 2000 шт
товар відсутній
IPT60R022S7XTMA1 IPT60R022S7XTMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel
Case: PG-HSOF-8
Power dissipation: 390W
Gate charge: 31nC
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
IPT60R040S7XTMA1
IPT60R040S7XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Mounting: THT
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 207A
Case: TO220
Drain-source voltage: 600V
Drain current: 13A
кількість в упаковці: 2000 шт
товар відсутній
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Drain-source voltage: 600V
Drain current: 8A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Mounting: THT
Case: TO220
кількість в упаковці: 2000 шт
товар відсутній
IPU50R1K4CEBKMA1 IPU50R1K4CE-DTE.pdf
IPU50R1K4CEBKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.1A
Power dissipation: 25W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPU80R1K0CEBKMA1 IPU80R1K0CE-dte.pdf
IPU80R1K0CEBKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 948 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
6+48.8 грн
Мінімальне замовлення: 6
IPU80R1K2P7AKMA1 IPU80R1K2P7.pdf
IPU80R1K2P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 443 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
5+62.67 грн
6+ 53.84 грн
25+ 46.03 грн
26+ 40.12 грн
71+ 37.91 грн
Мінімальне замовлення: 5
IPU80R1K4P7AKMA1 IPU80R1K4P7.pdf
IPU80R1K4P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1203 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
5+62.67 грн
6+ 49.63 грн
25+ 41.88 грн
29+ 36.33 грн
78+ 34.39 грн
Мінімальне замовлення: 5
IPU80R2K0P7AKMA1 IPU80R2K0P7.pdf
IPU80R2K0P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+284.87 грн
5+ 67.76 грн
18+ 59.08 грн
49+ 55.55 грн
IPU80R2K4P7AKMA1 IPU80R2K4P7.pdf
IPU80R2K4P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPU80R3K3P7AKMA1 IPU80R3K3P7.pdf
IPU80R3K3P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1.pdf
IPU80R4K5P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 2.6A
Power dissipation: 13W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1469 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+107.3 грн
5+ 56.59 грн
25+ 41.27 грн
69+ 38.97 грн
Мінімальне замовлення: 3
IPU80R600P7AKMA1 IPU80R600P7.pdf
IPU80R600P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+184.22 грн
5+ 159.32 грн
7+ 151.66 грн
19+ 143.72 грн
25+ 142.84 грн
Мінімальне замовлення: 2
IPU80R750P7AKMA1 IPU80R750P7.pdf
IPU80R750P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPU80R900P7AKMA1 IPU80R900P7.pdf
IPU80R900P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 344 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
4+74.07 грн
5+ 64.1 грн
22+ 47.61 грн
60+ 44.97 грн
Мінімальне замовлення: 4
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