IPT210N25NFDATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MV POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
на замовлення 1221 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 568.71 грн |
| 10+ | 469.3 грн |
| 100+ | 391.05 грн |
| 500+ | 323.81 грн |
| 1000+ | 291.43 грн |
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Технічний опис IPT210N25NFDATMA1 Infineon Technologies
Description: MV POWER MOS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 267µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V.
Інші пропозиції IPT210N25NFDATMA1
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IPT210N25NFDATMA1 | Виробник : Infineon Technologies |
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IPT210N25NFDATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 250V 69A Automotive 9-Pin(8+Tab) HSOF T/R |
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IPT210N25NFDATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tape Gate charge: 86nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 276A Mounting: SMD Case: PG-HSOF-8 Drain-source voltage: 250V Drain current: 54A кількість в упаковці: 2000 шт |
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IPT210N25NFDATMA1 | Виробник : Infineon Technologies |
Description: MV POWER MOS Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V |
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IPT210N25NFDATMA1 | Виробник : Infineon Technologies |
MOSFET TRENCH >=100V |
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IPT210N25NFDATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tape Gate charge: 86nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 276A Mounting: SMD Case: PG-HSOF-8 Drain-source voltage: 250V Drain current: 54A |
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