Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136558) > Сторінка 2276 з 2276
| Фото | Назва | Виробник | Інформація |
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IPB200N25N3GATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 64A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhanced |
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TLF4277ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 5÷12V; 0.2A; SSOP14 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 5...12V Output current: 0.2A Case: SSOP14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 5...40V |
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IPP65R225C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP50R500CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 57W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 500V Drain current: 7.6A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: CoolMOS™ |
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IPP50R520CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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BSZ12DN20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 200V Drain current: 11.3A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced |
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IPD95R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK Polarisation: unipolar Kind of package: reel Power dissipation: 52W Type of transistor: N-MOSFET On-state resistance: 1.2Ω Drain current: 3.7A Features of semiconductor devices: ESD protected gate Gate charge: 15nC Drain-source voltage: 950V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD |
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IPN95R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 15nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPU95R1K2P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 52W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| IAUC41N06S5L100ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 115A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 13.9mΩ Mounting: SMD Gate charge: 16.4nC Kind of package: reel; tape Kind of channel: enhanced |
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IMW65R072M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247 Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 69A Power dissipation: 96W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 94mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| AIDK12S65C5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 14µA Max. forward impulse current: 40A Power dissipation: 62W |
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| IAUC28N08S5L230ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8 Mounting: SMD Drain-source voltage: 80V Drain current: 20A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: reel; tape Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 112A Case: PG-TDSON-8 |
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IDH20G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 157W; PG-TO220-2 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Power dissipation: 157W Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Heatsink thickness: 1.17...137mm Max. forward impulse current: 119A Max. forward voltage: 1.8V Leakage current: 4.1µA |
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TT600N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 600A; BG-PB60AT-1; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB60AT-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.27V Load current: 600A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 21kA |
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| ITS4090QEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 On-state resistance: 90mΩ Kind of package: reel; tape Supply voltage: 5...45V DC Technology: Industrial PROFET Operating temperature: -40...150°C Power dissipation: 1.8W Turn-on time: 75µs Turn-off time: 75µs |
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IPP80R600P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.5A Power dissipation: 60W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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TD400N26KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.6kV; 400A; BG-PB60-1; Ufmax: 1.88V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.6kV Load current: 400A Case: BG-PB60-1 Max. forward voltage: 1.88V Max. forward impulse current: 13kA Gate current: 250mA Electrical mounting: screw Max. load current: 800A Mechanical mounting: screw |
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TD425N18KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 425A; BG-PB60AT-1; Ufmax: 1.5V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 425A Case: BG-PB60AT-1 Max. forward voltage: 1.5V Max. forward impulse current: 14.5kA Gate current: 250mA Electrical mounting: screw Max. load current: 800A Mechanical mounting: screw |
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| TD430N22KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 430A; BG-PB60AT-1; Ufmax: 1.78V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 430A Case: BG-PB60AT-1 Max. forward voltage: 1.78V Max. forward impulse current: 14kA Gate current: 250mA Electrical mounting: screw Max. load current: 800A Mechanical mounting: screw |
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IRLHS6242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Power dissipation: 1.98W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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HFA08TB60PBF | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 14W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 1.7V Power dissipation: 14W Reverse recovery time: 55ns |
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IRFS3107PBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 370W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhanced |
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TT500N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ500N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ500N18KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.8kV Load current: 500A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ600N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IPT60R040S7XTMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A Mounting: THT On-state resistance: 84mΩ Type of transistor: N-MOSFET Power dissipation: 245W Polarisation: unipolar Technology: CoolMOS™ S7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 207A Case: TO220 Drain-source voltage: 600V Drain current: 13A |
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IPI60R125CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced |
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IPL60R125P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 111W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 36nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPDD60R125G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 120W Type of transistor: N-MOSFET On-state resistance: 0.125Ω Drain current: 20A Gate charge: 27nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 54A Mounting: SMD |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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| IKFW90N60EH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3 Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Case: TO247-3 Power dissipation: 178W Technology: TRENCHSTOP™ Gate charge: 440nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 77A Pulsed collector current: 300A Turn-on time: 77ns Turn-off time: 237ns Type of transistor: IGBT |
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IPP60R950C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 37W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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DZ600N18K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.8kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 0.75V Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw |
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| IDK02G120C5XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; PG-TO263-2; 75W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.7V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 6µA Max. forward impulse current: 31A Power dissipation: 75W |
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DZ600N08K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 800V; If: 600A; BG-PB501-1; Ifsm: 22kA Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 0.8kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 0.75V Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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DZ600N16K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.6kV; If: 600A; BG-PB501-1; Ifsm: 22kA Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.6kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 0.75V Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw |
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IPD70R2K0CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 7.8nC Kind of channel: enhanced |
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| IPDD60R102G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 139W Type of transistor: N-MOSFET On-state resistance: 0.102Ω Drain current: 23A Gate charge: 34nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 66A Mounting: SMD |
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IPD80R4K5P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 13W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| IPDD60R050G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 278W Type of transistor: N-MOSFET On-state resistance: 50mΩ Drain current: 47A Gate charge: 68nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 135A Mounting: SMD |
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IPD80R2K0P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 24W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1632 шт: термін постачання 21-30 дні (днів) |
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IPD80R2K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Power dissipation: 22W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 7.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPD95R2K0P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK Polarisation: unipolar Kind of package: reel Power dissipation: 37W Type of transistor: N-MOSFET On-state resistance: 2Ω Drain current: 2.4A Features of semiconductor devices: ESD protected gate Gate charge: 10nC Drain-source voltage: 950V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD |
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BSD314SPEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT-363 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of channel: enhanced |
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TLE7250SJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Interface: CAN Mounting: SMD Case: PG-DSO-8 Number of receivers: 1 Operating temperature: -40...150°C DC supply current: 60mA Kind of package: reel; tape Number of transmitters: 1 |
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TLE7250XSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Interface: CAN Mounting: SMD Case: PG-DSO-8 Number of receivers: 1 Operating temperature: -40...150°C DC supply current: 60mA Kind of package: reel; tape Number of transmitters: 1 |
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TLE7251VSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC Interface: CAN Mounting: SMD Case: PG-DSO-8 Number of receivers: 1 Operating temperature: -40...150°C DC supply current: 60mA Kind of package: reel; tape Number of transmitters: 1 |
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IPD80R1K0CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of channel: enhanced |
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IPD80R1K4CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.3A Power dissipation: 63W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced |
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IPD80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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BSS83PH6327 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power: 0.36W Case: SOT23 On-state resistance: 2Ω Mounting: SMD |
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TD210N12KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.2kV Max. load current: 410A Max. forward voltage: 1.65V Load current: 210A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 6.6kA |
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TD215N22KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 2.2kV Max. load current: 410A Max. forward voltage: 1.8V Load current: 215A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 7kA |
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SPB18P06PGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.6A Power dissipation: 81.1W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhanced |
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ISP752T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Technology: Industrial PROFET |
на замовлення 2215 шт: термін постачання 21-30 дні (днів) |
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| T1190N16TOFVTXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck Mounting: Press-Pack Case: BG-T7526K-1 Max. off-state voltage: 1.6kV Max. load current: 2.8kA Load current: 1.19kA Gate current: 250mA Max. forward impulse current: 22.5kA |
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IRF7748L1TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET Mounting: SMD Power dissipation: 3.3W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DirectFET Drain-source voltage: 60V Drain current: 28A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET |
товар відсутній |
| IPB200N25N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TLF4277ELXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷12V; 0.2A; SSOP14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 5...12V
Output current: 0.2A
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5...40V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷12V; 0.2A; SSOP14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 5...12V
Output current: 0.2A
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5...40V
товар відсутній
| IPP65R225C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP50R500CEXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 57W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 7.6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 57W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 7.6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: CoolMOS™
товар відсутній
| IPP50R520CPXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BSZ12DN20NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11.3A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11.3A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD95R1K2P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 52W
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Drain current: 3.7A
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 52W
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Drain current: 3.7A
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
товар відсутній
| IPN95R1K2P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPU95R1K2P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IAUC41N06S5L100ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 115A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 115A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IMW65R072M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1134.73 грн |
| 2+ | 719.35 грн |
| 3+ | 718.62 грн |
| 4+ | 679.67 грн |
| AIDK12S65C5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 40A
Power dissipation: 62W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 40A
Power dissipation: 62W
товар відсутній
| IAUC28N08S5L230ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Case: PG-TDSON-8
товар відсутній
| IDH20G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 157W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Power dissipation: 157W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 119A
Max. forward voltage: 1.8V
Leakage current: 4.1µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 157W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Power dissipation: 157W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 119A
Max. forward voltage: 1.8V
Leakage current: 4.1µA
товар відсутній
| TT600N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 600A; BG-PB60AT-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60AT-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 600A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 21kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 600A; BG-PB60AT-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60AT-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 600A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 21kA
товар відсутній
| ITS4090QEPDXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Operating temperature: -40...150°C
Power dissipation: 1.8W
Turn-on time: 75µs
Turn-off time: 75µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 90mΩ
Kind of package: reel; tape
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Operating temperature: -40...150°C
Power dissipation: 1.8W
Turn-on time: 75µs
Turn-off time: 75µs
товар відсутній
| IPP80R600P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| TD400N26KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.6kV; 400A; BG-PB60-1; Ufmax: 1.88V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.6kV; 400A; BG-PB60-1; Ufmax: 1.88V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
товар відсутній
| TD425N18KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 425A; BG-PB60AT-1; Ufmax: 1.5V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 425A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 425A; BG-PB60AT-1; Ufmax: 1.5V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 425A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
товар відсутній
| TD430N22KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 430A; BG-PB60AT-1; Ufmax: 1.78V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 430A
Case: BG-PB60AT-1
Max. forward voltage: 1.78V
Max. forward impulse current: 14kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 430A; BG-PB60AT-1; Ufmax: 1.78V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 430A
Case: BG-PB60AT-1
Max. forward voltage: 1.78V
Max. forward impulse current: 14kA
Gate current: 250mA
Electrical mounting: screw
Max. load current: 800A
Mechanical mounting: screw
товар відсутній
| IRLHS6242TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| HFA08TB60PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 14W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 14W
Reverse recovery time: 55ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 14W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 14W
Reverse recovery time: 55ns
товар відсутній
| IRFS3107PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhanced
товар відсутній
| TT500N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TZ500N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TZ500N18KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TZ600N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IPT60R040S7XTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Mounting: THT
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 207A
Case: TO220
Drain-source voltage: 600V
Drain current: 13A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Mounting: THT
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 207A
Case: TO220
Drain-source voltage: 600V
Drain current: 13A
товар відсутній
| IPI60R125CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPL60R125P7AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPDD60R125G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 120W
Type of transistor: N-MOSFET
On-state resistance: 0.125Ω
Drain current: 20A
Gate charge: 27nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 54A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 120W
Type of transistor: N-MOSFET
On-state resistance: 0.125Ω
Drain current: 20A
Gate charge: 27nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 54A
Mounting: SMD
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 323.64 грн |
| 5+ | 211.62 грн |
| 12+ | 199.86 грн |
| IKFW90N60EH3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Power dissipation: 178W
Technology: TRENCHSTOP™
Gate charge: 440nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 77A
Pulsed collector current: 300A
Turn-on time: 77ns
Turn-off time: 237ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Power dissipation: 178W
Technology: TRENCHSTOP™
Gate charge: 440nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 77A
Pulsed collector current: 300A
Turn-on time: 77ns
Turn-off time: 237ns
Type of transistor: IGBT
товар відсутній
| IPP60R950C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| DZ600N18K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IDK02G120C5XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; PG-TO263-2; 75W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 6µA
Max. forward impulse current: 31A
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; PG-TO263-2; 75W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 6µA
Max. forward impulse current: 31A
Power dissipation: 75W
товар відсутній
| DZ600N08K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 800V; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 800V; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11418.52 грн |
| DZ600N16K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IPD70R2K0CEAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhanced
товар відсутній
| IPDD60R102G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 139W
Type of transistor: N-MOSFET
On-state resistance: 0.102Ω
Drain current: 23A
Gate charge: 34nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 66A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 139W
Type of transistor: N-MOSFET
On-state resistance: 0.102Ω
Drain current: 23A
Gate charge: 34nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 66A
Mounting: SMD
товар відсутній
| IPD80R4K5P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 13W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 13W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPDD60R050G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 278W
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 47A
Gate charge: 68nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 135A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 278W
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 47A
Gate charge: 68nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 135A
Mounting: SMD
товар відсутній
| IPD80R2K0P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1632 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.63 грн |
| 8+ | 46 грн |
| 25+ | 35.34 грн |
| 67+ | 33.43 грн |
| IPD80R2K4P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPD95R2K0P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 37W
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Drain current: 2.4A
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 37W
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Drain current: 2.4A
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
товар відсутній
| BSD314SPEH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TLE7250SJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
товар відсутній
| TLE7250XSJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
товар відсутній
| TLE7251VSJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
товар відсутній
| IPD80R1K0CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD80R1K4CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD80R1K4P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| BSS83PH6327 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power: 0.36W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power: 0.36W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
товар відсутній
| TD210N12KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
товар відсутній
| TD215N22KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
товар відсутній
| SPB18P06PGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 81.1W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 81.1W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| ISP752T |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
на замовлення 2215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.65 грн |
| 5+ | 100.67 грн |
| 10+ | 87.44 грн |
| 27+ | 82.3 грн |
| 500+ | 79.36 грн |
| T1190N16TOFVTXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T7526K-1
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Max. forward impulse current: 22.5kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T7526K-1
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Max. forward impulse current: 22.5kA
товар відсутній
| IRF7748L1TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 60V
Drain current: 28A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 60V
Drain current: 28A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
товар відсутній