Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139418) > Сторінка 1213 з 2324
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IAUC120N04S6L012ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC120N04S6N009ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5000 шт |
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| IAUC120N06S5L032ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 364A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC120N06S5N017ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 757A Power dissipation: 167W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 95.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC24N10S5L300ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Pulsed drain current: 96A Power dissipation: 38W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC26N10S5L245ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 7A Pulsed drain current: 104A Power dissipation: 40W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 37.8mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC28N08S5L230ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 112A Drain-source voltage: 80V Drain current: 20A On-state resistance: 23mΩ кількість в упаковці: 5000 шт |
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| IAUC40N08S5L140ATMA1 | INFINEON TECHNOLOGIES |
IAUC40N08S5L140 SMD N channel transistors |
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| IAUC41N06S5L100ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 115A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 13.9mΩ Mounting: SMD Gate charge: 16.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC41N06S5N102ATMA1 | INFINEON TECHNOLOGIES |
IAUC41N06S5N102 SMD N channel transistors |
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| IAUC45N04S6L063HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 15A Pulsed drain current: 134A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC45N04S6N070HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 14A Pulsed drain current: 119A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC50N08S5L096ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 13.9mΩ Drain current: 16A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W кількість в упаковці: 5000 шт |
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| IAUC50N08S5N102ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 15.8mΩ Drain current: 12A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 21nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W кількість в упаковці: 5000 шт |
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| IAUC60N04S6L030HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC60N04S6L039ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Pulsed drain current: 240A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC60N04S6L045HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Pulsed drain current: 193A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 6mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC60N04S6N031HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC60N04S6N044ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 240A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC60N04S6N050HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 171A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC60N06S5L073ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 168A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC60N06S5N074ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 168A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC60N10S5L110ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 240A Power dissipation: 88W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC64N08S5L075ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 256A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC70N08S5N074ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 47A Pulsed drain current: 280A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC80N04S6L032ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 66A Pulsed drain current: 320A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUC90N10S5N062ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 66A Pulsed drain current: 360A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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IAUS165N08S5N029ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W Case: PG-HSOG-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 660A Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| IAUS200N08S5N023ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 148A Pulsed drain current: 800A Power dissipation: 200W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт |
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| IAUS240N08S5N019ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 173A Pulsed drain current: 960A Power dissipation: 230W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт |
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| IAUS260N10S5N019TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 91A Pulsed drain current: 995A Power dissipation: 300W Case: PG-HDSOP-16 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 166nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт |
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| IAUS300N08S5N011ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт |
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| IAUS300N08S5N011TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 1450A Power dissipation: 375W Case: PG-HDSOP-16 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт |
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| IAUS300N08S5N012ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт |
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| IAUS300N08S5N014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOG-8 On-state resistance: 1.4mΩ Pulsed drain current: 1.2kA Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 230A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET кількість в упаковці: 1800 шт |
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| IAUS300N08S5N014TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HDSOP-16 On-state resistance: 2.1mΩ Pulsed drain current: 1186A Power dissipation: 300W Gate charge: 187nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 108A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET кількість в упаковці: 1800 шт |
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| IAUS300N10S5N014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 1315A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 216nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1800 шт |
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IAUT150N10S5N035ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 166W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
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IAUT165N08S5N029ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2000 шт |
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IAUT200N08S5N023ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8 Kind of package: reel; tape Polarisation: unipolar Power dissipation: 200W Gate charge: 36nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Drain current: 200A Drain-source voltage: 80V Case: PG-HSOF-8 Mounting: SMD кількість в упаковці: 2000 шт |
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IAUT240N08S5N019ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD On-state resistance: 1.9mΩ Drain current: 240A Gate charge: 42nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 230W Polarisation: unipolar Kind of package: reel; tape Type of transistor: N-MOSFET кількість в упаковці: 2000 шт |
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IAUT260N10S5N019ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 260A Power dissipation: 300W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
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| IAUT300N08S5N011ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
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IAUT300N08S5N012ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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IAUT300N08S5N014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8 Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOF-8 On-state resistance: 1.4mΩ Power dissipation: 300W Gate charge: 60nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 300A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET кількість в упаковці: 2000 шт |
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| IAUT300N10S5N014ATMA1 | INFINEON TECHNOLOGIES |
IAUT300N10S5N014 SMD N channel transistors |
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IAUT300N10S5N015ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 300A кількість в упаковці: 2000 шт |
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| IAUZ18N10S5L420ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5000 шт |
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| IAUZ20N08S5L300ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Features of semiconductor devices: logic level Kind of package: reel; tape Technology: OptiMOS™ 5 On-state resistance: 30mΩ Pulsed drain current: 80A Power dissipation: 30W Polarisation: unipolar Drain current: 14A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V кількість в упаковці: 5000 шт |
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| IAUZ30N08S5N186ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7A Pulsed drain current: 120A Power dissipation: 41W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 22.7mΩ Mounting: SMD Gate charge: 12.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUZ30N10S5L240ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 120A Power dissipation: 45.5W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5000 шт |
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| IAUZ40N06S5L050ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 252A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 36.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUZ40N06S5N050ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 241A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 30.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUZ40N06S5N105ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 120A Power dissipation: 42W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUZ40N08S5N100ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 68W Gate charge: 24.2nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Case: PG-TSDSON-8 кількість в упаковці: 5000 шт |
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| IAUZ40N10S5L120ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 160A Power dissipation: 62W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IAUZ40N10S5N130ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 160A Power dissipation: 68W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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ICE1HS01G1XUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8; 10.2÷18V Frequency: 50...609kHz Operating temperature: -25...125°C Topology: push-pull Kind of integrated circuit: resonant mode controller Mounting: SMD Case: PG-DSO-8 Operating voltage: 10.2...18V Type of integrated circuit: PMIC Application: for LCD displays; SMPS кількість в упаковці: 2500 шт |
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ICE2A180ZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 4.1A Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 800V Duty cycle factor: 0...77% Power: 29/17W Application: SMPS Operating voltage: 8.5...21V кількість в упаковці: 2000 шт |
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ICE2HS01GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; 11÷18V Type of integrated circuit: PMIC Kind of integrated circuit: resonant mode controller Frequency: 0.03...1MHz Case: PG-DSO-20 Mounting: SMD Operating temperature: -25...125°C Topology: push-pull Application: SMPS Operating voltage: 11...18V кількість в упаковці: 1 шт |
товар відсутній |
| IAUC120N04S6L012ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC120N04S6N009ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
товар відсутній
| IAUC120N06S5L032ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC120N06S5N017ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC24N10S5L300ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC26N10S5L245ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 104A
Power dissipation: 40W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 37.8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 104A
Power dissipation: 40W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 37.8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC28N08S5L230ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 23mΩ
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 23mΩ
кількість в упаковці: 5000 шт
товар відсутній
| IAUC40N08S5L140ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
IAUC40N08S5L140 SMD N channel transistors
IAUC40N08S5L140 SMD N channel transistors
товар відсутній
| IAUC41N06S5L100ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 115A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 115A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 115A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC41N06S5N102ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUC41N06S5N102 SMD N channel transistors
IAUC41N06S5N102 SMD N channel transistors
товар відсутній
| IAUC45N04S6L063HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Pulsed drain current: 134A
Power dissipation: 41W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Pulsed drain current: 134A
Power dissipation: 41W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC45N04S6N070HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Pulsed drain current: 119A
Power dissipation: 41W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Pulsed drain current: 119A
Power dissipation: 41W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC50N08S5L096ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 13.9mΩ
Drain current: 16A
Drain-source voltage: 80V
Case: PG-TDSON-8
Gate charge: 29nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 200A
Power dissipation: 60W
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 13.9mΩ
Drain current: 16A
Drain-source voltage: 80V
Case: PG-TDSON-8
Gate charge: 29nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 200A
Power dissipation: 60W
кількість в упаковці: 5000 шт
товар відсутній
| IAUC50N08S5N102ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 15.8mΩ
Drain current: 12A
Drain-source voltage: 80V
Case: PG-TDSON-8
Gate charge: 21nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 200A
Power dissipation: 60W
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 15.8mΩ
Drain current: 12A
Drain-source voltage: 80V
Case: PG-TDSON-8
Gate charge: 21nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 200A
Power dissipation: 60W
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N04S6L030HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N04S6L039ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N04S6L045HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N04S6N031HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N04S6N044ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N04S6N050HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N06S5L073ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N06S5N074ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC60N10S5L110ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC64N08S5L075ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC70N08S5N074ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC80N04S6L032ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUC90N10S5N062ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUS165N08S5N029ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 660A
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 660A
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| IAUS200N08S5N023ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 148A
Pulsed drain current: 800A
Power dissipation: 200W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 148A
Pulsed drain current: 800A
Power dissipation: 200W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
товар відсутній
| IAUS240N08S5N019ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
товар відсутній
| IAUS260N10S5N019TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
товар відсутній
| IAUS300N08S5N011ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
товар відсутній
| IAUS300N08S5N011TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 1450A
Power dissipation: 375W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 1450A
Power dissipation: 375W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
товар відсутній
| IAUS300N08S5N012ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
товар відсутній
| IAUS300N08S5N014ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOG-8
On-state resistance: 1.4mΩ
Pulsed drain current: 1.2kA
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 230A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOG-8
On-state resistance: 1.4mΩ
Pulsed drain current: 1.2kA
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 230A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
кількість в упаковці: 1800 шт
товар відсутній
| IAUS300N08S5N014TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HDSOP-16
On-state resistance: 2.1mΩ
Pulsed drain current: 1186A
Power dissipation: 300W
Gate charge: 187nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 108A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HDSOP-16
On-state resistance: 2.1mΩ
Pulsed drain current: 1186A
Power dissipation: 300W
Gate charge: 187nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 108A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
кількість в упаковці: 1800 шт
товар відсутній
| IAUS300N10S5N014ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1800 шт
товар відсутній
| IAUT150N10S5N035ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
| IAUT165N08S5N029ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2000 шт
товар відсутній
| IAUT200N08S5N023ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 200W
Gate charge: 36nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Drain current: 200A
Drain-source voltage: 80V
Case: PG-HSOF-8
Mounting: SMD
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 200W
Gate charge: 36nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Drain current: 200A
Drain-source voltage: 80V
Case: PG-HSOF-8
Mounting: SMD
кількість в упаковці: 2000 шт
товар відсутній
| IAUT240N08S5N019ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.9mΩ
Drain current: 240A
Gate charge: 42nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 230W
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.9mΩ
Drain current: 240A
Gate charge: 42nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 230W
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
| IAUT260N10S5N019ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
| IAUT300N08S5N011ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
| IAUT300N08S5N012ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IAUT300N08S5N014ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 300A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 300A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
кількість в упаковці: 2000 шт
товар відсутній
| IAUT300N10S5N014ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
IAUT300N10S5N014 SMD N channel transistors
IAUT300N10S5N014 SMD N channel transistors
товар відсутній
| IAUT300N10S5N015ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
кількість в упаковці: 2000 шт
товар відсутній
| IAUZ18N10S5L420ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 72A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 72A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ20N08S5L300ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Features of semiconductor devices: logic level
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 30mΩ
Pulsed drain current: 80A
Power dissipation: 30W
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Features of semiconductor devices: logic level
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 30mΩ
Pulsed drain current: 80A
Power dissipation: 30W
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ30N08S5N186ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ30N10S5L240ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ40N06S5L050ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 252A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 252A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ40N06S5N050ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 241A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 241A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ40N06S5N105ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 120A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 120A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ40N08S5N100ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Gate charge: 24.2nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: PG-TSDSON-8
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Gate charge: 24.2nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: PG-TSDSON-8
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ40N10S5L120ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IAUZ40N10S5N130ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| ICE1HS01G1XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8; 10.2÷18V
Frequency: 50...609kHz
Operating temperature: -25...125°C
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 10.2...18V
Type of integrated circuit: PMIC
Application: for LCD displays; SMPS
кількість в упаковці: 2500 шт
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8; 10.2÷18V
Frequency: 50...609kHz
Operating temperature: -25...125°C
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 10.2...18V
Type of integrated circuit: PMIC
Application: for LCD displays; SMPS
кількість в упаковці: 2500 шт
товар відсутній
| ICE2A180ZXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 4.1A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Power: 29/17W
Application: SMPS
Operating voltage: 8.5...21V
кількість в упаковці: 2000 шт
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 4.1A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Power: 29/17W
Application: SMPS
Operating voltage: 8.5...21V
кількість в упаковці: 2000 шт
товар відсутній
| ICE2HS01GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; 11÷18V
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; 11÷18V
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V
кількість в упаковці: 1 шт
товар відсутній