Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139419) > Сторінка 1220 з 2324
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IM69D120V01XTSA1 | INFINEON TECHNOLOGIES |
 Category: RTV - audio integrated circuitsDescription: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC Interface: PDM Supply voltage: 1.62...3.6V DC Case: LLGA-5-1 Kind of integrated circuit: digital microphone Mounting: SMD Type of integrated circuit: driver/sensor Integrated circuit features: MEMS кількість в упаковці: 1 шт |
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IM69D130V01XTSA1 | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC Type of integrated circuit: driver/sensor Kind of integrated circuit: digital microphone Interface: PDM Integrated circuit features: MEMS Mounting: SMD Supply voltage: 1.62...3.6V DC Case: LLGA-5-1 кількість в упаковці: 1000 шт |
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| IM818MCCXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV Mounting: THT Case: DIP36 Kind of package: tube Output current: 5A Type of integrated circuit: driver Technology: ClPOS™ Maxi; TRENCHSTOP™ Kind of integrated circuit: 3-phase motor controller; IPM Topology: IGBT three-phase bridge; thermistor Voltage class: 1.2kV кількість в упаковці: 1 шт |
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IM818SCCXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV Mounting: THT Case: DIP36 Kind of package: tube Output current: 5A Type of integrated circuit: driver Technology: ClPOS™ Maxi; TRENCHSTOP™ Kind of integrated circuit: 3-phase motor controller; IPM Topology: IGBT three-phase bridge; thermistor Voltage class: 1.2kV кількість в упаковці: 1 шт |
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| IMC301AF064XUMA1 | INFINEON TECHNOLOGIES |
IMC301AF064XUMA1 Motor and PWM drivers |
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| IMC302AF064XUMA1 | INFINEON TECHNOLOGIES |
IMC302AF064XUMA1 Motor and PWM drivers |
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| IMW120R014M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W Mounting: THT Drain-source voltage: 1.2kV Drain current: 89.3A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 267.9A Case: TO247 кількість в упаковці: 1 шт |
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| IMW120R020M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W Mounting: THT Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 188W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 213A Case: TO247 кількість в упаковці: 1 шт |
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| IMW120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 57mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 150A Case: TO247 кількість в упаковці: 1 шт |
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IMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 36A On-state resistance: 59mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -10...20V Pulsed drain current: 130A Case: TO247 кількість в упаковці: 1 шт |
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| IMW120R060M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W; TO247 Mounting: THT Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 113mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 76A Case: TO247 кількість в упаковці: 1 шт |
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IMW120R090M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247 Mounting: THT Drain-source voltage: 1.2kV Drain current: 18A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 58W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 50A Case: TO247 кількість в упаковці: 1 шт |
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IMW120R140M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247 Mounting: THT Drain-source voltage: 1.2kV Drain current: 13A On-state resistance: 265mΩ Type of transistor: N-MOSFET Power dissipation: 47W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 32A Case: TO247 кількість в упаковці: 1 шт |
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IMW120R220M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W Mounting: THT Drain-source voltage: 1.2kV Drain current: 9.5A On-state resistance: 416mΩ Type of transistor: N-MOSFET Power dissipation: 37.5W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 21A Case: TO247 кількість в упаковці: 1 шт |
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| IMW120R350M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W Mounting: THT Drain-source voltage: 1.2kV Drain current: 4.7A On-state resistance: 662mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 13A Case: TO247 кількість в упаковці: 1 шт |
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| IMW65R027M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 185A Power dissipation: 189W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 35mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IMW65R048M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 100A Power dissipation: 125W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 63mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IMW65R072M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247 Power dissipation: 96W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 94mΩ Drain current: 18A Drain-source voltage: 650V Kind of package: tube Case: TO247 Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -5...23V Pulsed drain current: 69A Mounting: THT кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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| IMW65R107M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247 Case: TO247 Mounting: THT Kind of package: tube Power dissipation: 75W Polarisation: unipolar Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -5...23V Pulsed drain current: 48A Drain-source voltage: 650V Drain current: 13A On-state resistance: 139mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IMZ120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 57mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 150A кількість в упаковці: 1 шт |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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| IMZ120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 36A On-state resistance: 59mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -10...20V Pulsed drain current: 130A Case: TO247-4 кількість в упаковці: 30 шт |
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| IMZ120R060M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W Mounting: THT Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 113mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 76A Case: TO247-4 кількість в упаковці: 1 шт |
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| IMZ120R090M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W Mounting: THT Drain-source voltage: 1.2kV Drain current: 18A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 58W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 50A Case: TO247-4 кількість в упаковці: 1 шт |
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| IMZ120R140M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W Mounting: THT Drain-source voltage: 1.2kV Drain current: 13A On-state resistance: 265mΩ Type of transistor: N-MOSFET Power dissipation: 47W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 32A Case: TO247-4 кількість в упаковці: 1 шт |
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| IMZ120R220M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W Mounting: THT Drain-source voltage: 1.2kV Drain current: 9.5A On-state resistance: 416mΩ Type of transistor: N-MOSFET Power dissipation: 37.5W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 21A Case: TO247-4 кількість в упаковці: 1 шт |
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| IMZ120R350M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W Mounting: THT Drain-source voltage: 1.2kV Drain current: 4.7A On-state resistance: 662mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 13A Case: TO247-4 кількість в упаковці: 1 шт |
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| IMZA120R020M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W Mounting: THT Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 188W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 213A Case: TO247-4 кількість в упаковці: 1 шт |
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| IMZA65R027M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W Mounting: THT Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Pulsed drain current: 184A Gate-source voltage: -5...23V Case: TO247-4 Drain-source voltage: 650V Drain current: 41A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 189W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
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| IMZA65R048M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W Mounting: THT Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Pulsed drain current: 100A Gate-source voltage: -5...23V Case: TO247-4 Drain-source voltage: 650V Drain current: 24A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
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| IMZA65R072M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W Power dissipation: 96W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 94mΩ Drain current: 18A Drain-source voltage: 650V Kind of package: tube Features of semiconductor devices: Kelvin terminal Case: TO247-4 Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -5...23V Pulsed drain current: 69A Mounting: THT кількість в упаковці: 1 шт |
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| IMZA65R107M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W Case: TO247-4 Mounting: THT Kind of package: tube Power dissipation: 75W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -5...23V Pulsed drain current: 48A Drain-source voltage: 650V Drain current: 13A On-state resistance: 139mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IPA028N04NM3SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP Mounting: THT Drain current: 63A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 356A Case: TO220FP Drain-source voltage: 40V кількість в упаковці: 1 шт |
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IPA028N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP Mounting: THT Drain current: 62A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: tube Gate charge: 155nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220FP Drain-source voltage: 80V кількість в упаковці: 1 шт |
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IPA029N06NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP Mounting: THT Drain current: 62A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 348A Case: TO220FP Drain-source voltage: 60V кількість в упаковці: 1 шт |
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IPA029N06NXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP Mounting: THT Drain current: 84A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220FP Drain-source voltage: 60V кількість в упаковці: 1 шт |
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IPA030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Power dissipation: 41W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 79A On-state resistance: 3mΩ кількість в упаковці: 1 шт |
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IPA032N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Power dissipation: 41W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 84A On-state resistance: 3.2mΩ кількість в упаковці: 1 шт |
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IPA037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Power dissipation: 41W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 75A On-state resistance: 3.7mΩ кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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IPA040N06NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 51A Pulsed drain current: 288A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPA040N06NXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 69A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPA040N08NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 300A; 39W; TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 80V Type of transistor: N-MOSFET Case: TO220FP On-state resistance: 4mΩ Gate-source voltage: ±20V Pulsed drain current: 300A Power dissipation: 39W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 53A Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 220 шт: термін постачання 14-21 дні (днів) |
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IPA041N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 35W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPA045N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 64A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPA050N10NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 264A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| IPA052N08NM5SXKSA1 | INFINEON TECHNOLOGIES |
IPA052N08NM5SXKSA1 THT N channel transistors |
товар відсутній |
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IPA057N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 92 шт: термін постачання 14-21 дні (днів) |
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| IPA057N08N3GXKSA1 | INFINEON TECHNOLOGIES |
IPA057N08N3GXKSA1 THT N channel transistors |
товар відсутній |
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IPA060N06NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Pulsed drain current: 224A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 498 шт: термін постачання 14-21 дні (днів) |
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IPA060N06NXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPA075N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 48 шт: термін постачання 14-21 дні (днів) |
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IPA083N10N5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 34 шт: термін постачання 14-21 дні (днів) |
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IPA083N10NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 200A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 479 шт: термін постачання 14-21 дні (днів) |
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IPA086N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 37.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 79 шт: термін постачання 14-21 дні (днів) |
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IPA093N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 43A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPA105N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 37A Power dissipation: 40.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 156 шт: термін постачання 14-21 дні (днів) |
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IPA126N10NM3SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 156A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 156A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPA320N20NM3SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 104A Drain-source voltage: 200V Drain current: 19A кількість в упаковці: 1 шт |
товар відсутній |
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IPA50R140CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPA50R190CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP Mounting: THT Case: TO220FP Drain-source voltage: 500V Drain current: 18.5A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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IPA50R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP Mounting: THT Case: TO220FP Drain-source voltage: 500V Drain current: 17A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
| IM69D120V01XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
кількість в упаковці: 1 шт
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
кількість в упаковці: 1 шт
товар відсутній
| IM69D130V01XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Type of integrated circuit: driver/sensor
Kind of integrated circuit: digital microphone
Interface: PDM
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
кількість в упаковці: 1000 шт
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Type of integrated circuit: driver/sensor
Kind of integrated circuit: digital microphone
Interface: PDM
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
кількість в упаковці: 1000 шт
товар відсутній
| IM818MCCXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV
Mounting: THT
Case: DIP36
Kind of package: tube
Output current: 5A
Type of integrated circuit: driver
Technology: ClPOS™ Maxi; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 1.2kV
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV
Mounting: THT
Case: DIP36
Kind of package: tube
Output current: 5A
Type of integrated circuit: driver
Technology: ClPOS™ Maxi; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| IM818SCCXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV
Mounting: THT
Case: DIP36
Kind of package: tube
Output current: 5A
Type of integrated circuit: driver
Technology: ClPOS™ Maxi; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 1.2kV
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV
Mounting: THT
Case: DIP36
Kind of package: tube
Output current: 5A
Type of integrated circuit: driver
Technology: ClPOS™ Maxi; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| IMC301AF064XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
IMC301AF064XUMA1 Motor and PWM drivers
IMC301AF064XUMA1 Motor and PWM drivers
товар відсутній
| IMC302AF064XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
IMC302AF064XUMA1 Motor and PWM drivers
IMC302AF064XUMA1 Motor and PWM drivers
товар відсутній
| IMW120R014M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 89.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 267.9A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 89.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 267.9A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW120R020M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 213A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 213A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW120R030M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 150A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 150A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW120R045M1XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW120R060M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 113mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 76A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 113mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 76A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW120R090M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW120R140M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW120R220M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 9.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Power dissipation: 37.5W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 21A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 9.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Power dissipation: 37.5W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 21A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW120R350M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| IMW65R027M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IMW65R048M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IMW65R072M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Power dissipation: 96W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 94mΩ
Drain current: 18A
Drain-source voltage: 650V
Kind of package: tube
Case: TO247
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 69A
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Power dissipation: 96W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 94mΩ
Drain current: 18A
Drain-source voltage: 650V
Kind of package: tube
Case: TO247
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 69A
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1388.59 грн |
| 2+ | 925.35 грн |
| 4+ | 842.52 грн |
| IMW65R107M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 75W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 139mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 75W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 139mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IMZ120R030M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 150A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 150A
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2297.86 грн |
| 2+ | 2095.34 грн |
| IMZ120R045M1XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247-4
кількість в упаковці: 30 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247-4
кількість в упаковці: 30 шт
товар відсутній
| IMZ120R060M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 113mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 76A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 113mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 76A
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
| IMZ120R090M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
| IMZ120R140M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
| IMZ120R220M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 9.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Power dissipation: 37.5W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 21A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9.5A; Idm: 21A; 37.5W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 9.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Power dissipation: 37.5W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 21A
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
| IMZ120R350M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
| IMZA120R020M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 213A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 213A
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
| IMZA65R027M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Pulsed drain current: 184A
Gate-source voltage: -5...23V
Case: TO247-4
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Pulsed drain current: 184A
Gate-source voltage: -5...23V
Case: TO247-4
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| IMZA65R048M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Pulsed drain current: 100A
Gate-source voltage: -5...23V
Case: TO247-4
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Pulsed drain current: 100A
Gate-source voltage: -5...23V
Case: TO247-4
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| IMZA65R072M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W
Power dissipation: 96W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 94mΩ
Drain current: 18A
Drain-source voltage: 650V
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 69A
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W
Power dissipation: 96W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 94mΩ
Drain current: 18A
Drain-source voltage: 650V
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 69A
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| IMZA65R107M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 75W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 139mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 75W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...23V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 139mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IPA028N04NM3SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 356A
Case: TO220FP
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 356A
Case: TO220FP
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
| IPA028N08N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Mounting: THT
Drain current: 62A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: tube
Gate charge: 155nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 80V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Mounting: THT
Drain current: 62A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: tube
Gate charge: 155nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 80V
кількість в упаковці: 1 шт
товар відсутній
| IPA029N06NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Mounting: THT
Drain current: 62A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 348A
Case: TO220FP
Drain-source voltage: 60V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Mounting: THT
Drain current: 62A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 348A
Case: TO220FP
Drain-source voltage: 60V
кількість в упаковці: 1 шт
товар відсутній
| IPA029N06NXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Mounting: THT
Drain current: 84A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 60V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Mounting: THT
Drain current: 84A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 60V
кількість в упаковці: 1 шт
товар відсутній
| IPA030N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 79A
On-state resistance: 3mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 79A
On-state resistance: 3mΩ
кількість в упаковці: 1 шт
товар відсутній
| IPA032N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 3.2mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 3.2mΩ
кількість в упаковці: 1 шт
товар відсутній
| IPA037N08N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 75A
On-state resistance: 3.7mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 75A
On-state resistance: 3.7mΩ
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 296.31 грн |
| 3+ | 247.44 грн |
| 7+ | 168.14 грн |
| 18+ | 159.15 грн |
| IPA040N06NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Pulsed drain current: 288A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Pulsed drain current: 288A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA040N06NXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA040N08NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 300A; 39W; TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Case: TO220FP
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 300A
Power dissipation: 39W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 53A
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 300A; 39W; TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Case: TO220FP
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 300A
Power dissipation: 39W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 53A
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 220 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.6 грн |
| 3+ | 169.01 грн |
| 9+ | 118.69 грн |
| 24+ | 112.4 грн |
| IPA041N04NGXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA045N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA050N10NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA052N08NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
IPA052N08NM5SXKSA1 THT N channel transistors
IPA052N08NM5SXKSA1 THT N channel transistors
товар відсутній
| IPA057N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 92 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.48 грн |
| 10+ | 151.27 грн |
| 12+ | 92.61 грн |
| 32+ | 87.22 грн |
| IPA057N08N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
IPA057N08N3GXKSA1 THT N channel transistors
IPA057N08N3GXKSA1 THT N channel transistors
товар відсутній
| IPA060N06NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 498 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.05 грн |
| 10+ | 94.41 грн |
| 13+ | 81.82 грн |
| 36+ | 77.33 грн |
| IPA060N06NXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA075N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 558.73 грн |
| 3+ | 465.01 грн |
| 4+ | 329.1 грн |
| 9+ | 310.21 грн |
| IPA083N10N5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.92 грн |
| 9+ | 133.53 грн |
| 23+ | 121.39 грн |
| 100+ | 119.59 грн |
| 250+ | 116.89 грн |
| IPA083N10NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 479 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 145.25 грн |
| 3+ | 126.06 грн |
| 10+ | 107 грн |
| 11+ | 95.31 грн |
| 31+ | 89.92 грн |
| IPA086N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 79 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 95.24 грн |
| 10+ | 80.92 грн |
| 15+ | 70.14 грн |
| 41+ | 66.54 грн |
| 250+ | 64.74 грн |
| IPA093N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA105N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 37A
Power dissipation: 40.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 37A
Power dissipation: 40.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 156 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 503.53 грн |
| 3+ | 418.32 грн |
| 4+ | 307.52 грн |
| 10+ | 290.43 грн |
| 100+ | 280.54 грн |
| IPA126N10NM3SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 156A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 156A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 156A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 156A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA320N20NM3SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 104A
Drain-source voltage: 200V
Drain current: 19A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 104A
Drain-source voltage: 200V
Drain current: 19A
кількість в упаковці: 1 шт
товар відсутній
| IPA50R140CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPA50R190CEXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| IPA50R199CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній