IPP65R150CFDXKSA1 Infineon Technologies
на замовлення 500 шт:
термін постачання 386-395 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 435.8 грн |
| 10+ | 386.3 грн |
| 100+ | 272.49 грн |
| 250+ | 262.04 грн |
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Технічний опис IPP65R150CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V, Power Dissipation (Max): 195.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V.
Інші пропозиції IPP65R150CFDXKSA1
| Фото | Назва | Виробник | Інформація |
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IPP65R150CFDXKSA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-220 Tube |
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IPP65R150CFDXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.4A Power dissipation: 195.3W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPP65R150CFDXKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 22.4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V |
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IPP65R150CFDXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.4A Power dissipation: 195.3W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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