Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137816) > Сторінка 1218 з 2297
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IPD65R950CFDBTMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Power dissipation: 36.7W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IPD70N10S312ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A Technology: OptiMOS® -T Mounting: SMD Case: PG-TO252-3-11 Power dissipation: 125W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 280A Drain-source voltage: 100V Drain current: 48A On-state resistance: 11.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 2500 шт |
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| IPD70N10S3L12ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 280A Power dissipation: 125W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD70R1K4CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.4A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 10.5nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD70R1K4P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.5A Power dissipation: 22.7W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD70R2K0CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 7.8nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD70R360P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2004 шт: термін постачання 14-21 дні (днів) |
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IPD70R600P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 5A Power dissipation: 43.1W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD70R900P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.5A Power dissipation: 30.5W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD78CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 31W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IPD80P03P4L07ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -65A Pulsed drain current: -320A Power dissipation: 88W Case: PG-TO252-3-11 Gate-source voltage: -5...16V On-state resistance: 6.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD80R1K0CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD80R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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IPD80R1K4CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.3A Power dissipation: 63W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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IPD80R280P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.6A Power dissipation: 101W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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IPD80R2K0P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 24W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 1632 шт: термін постачання 14-21 дні (днів) |
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IPD80R2K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Power dissipation: 22W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 7.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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IPD80R360P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 30nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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IPD80R3K3P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 18W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Gate charge: 6nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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IPD80R450P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.1A Power dissipation: 73W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
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IPD80R4K5P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 13W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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IPD80R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
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IPD80R900P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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IPD90N03S4L02ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD90N04S304ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W Polarisation: unipolar Power dissipation: 136W Type of transistor: N-MOSFET On-state resistance: 3.6mΩ Drain current: 90A Gate charge: 60nC Drain-source voltage: 40V Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD кількість в упаковці: 2500 шт |
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IPD90N04S404ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A Polarisation: unipolar Kind of package: reel Power dissipation: 71W Type of transistor: N-MOSFET On-state resistance: 4.1mΩ Drain current: 81A Gate charge: 20nC Drain-source voltage: 40V Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3-313 Pulsed drain current: 360A Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 2433 шт: термін постачання 14-21 дні (днів) |
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IPD90N04S405ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A Mounting: SMD Case: PG-TO252-3-313 Kind of package: reel Power dissipation: 65W Gate charge: 18nC Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 344A Drain-source voltage: 40V Drain current: 61A On-state resistance: 5.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
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| IPD90N06S407ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Pulsed drain current: 360A Power dissipation: 79W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| IPD90P03P4L04ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W Case: PG-TO252-3-11 Drain-source voltage: -30V Drain current: -90A On-state resistance: 4.1mΩ Type of transistor: P-MOSFET Power dissipation: 137W Polarisation: unipolar Technology: OptiMOS® -P2 Kind of channel: enhanced Gate-source voltage: -5...16V Pulsed drain current: -360A Mounting: SMD кількість в упаковці: 2500 шт |
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IPD90R1K2C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.2A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD90R1K2C3BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.2A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD95R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK Polarisation: unipolar Kind of package: reel Power dissipation: 52W Type of transistor: N-MOSFET On-state resistance: 1.2Ω Drain current: 3.7A Features of semiconductor devices: ESD protected gate Gate charge: 15nC Drain-source voltage: 950V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD кількість в упаковці: 1 шт |
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IPD95R2K0P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK Polarisation: unipolar Kind of package: reel Power dissipation: 37W Type of transistor: N-MOSFET On-state resistance: 2Ω Drain current: 2.4A Features of semiconductor devices: ESD protected gate Gate charge: 10nC Drain-source voltage: 950V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD кількість в упаковці: 1 шт |
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IPD95R450P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK Mounting: SMD Drain-source voltage: 950V Drain current: 8.6A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: ESD protected gate Gate charge: 35nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK кількість в упаковці: 1 шт |
на замовлення 1891 шт: термін постачання 14-21 дні (днів) |
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IPD95R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK Mounting: SMD Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 73W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: DPAK Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| IPDD60R050G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A Mounting: SMD Case: PG-HDSOP-10-1 Kind of package: reel; tape Gate charge: 68nC Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 135A Drain-source voltage: 600V Drain current: 47A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar кількість в упаковці: 1 шт |
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| IPDD60R080G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 174W Type of transistor: N-MOSFET On-state resistance: 80mΩ Drain current: 29A Gate charge: 42nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 83A Mounting: SMD кількість в упаковці: 1 шт |
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| IPDD60R102G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 139W Type of transistor: N-MOSFET On-state resistance: 0.102Ω Drain current: 23A Gate charge: 34nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 66A Mounting: SMD кількість в упаковці: 1 шт |
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IPDD60R125G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A Type of transistor: N-MOSFET Technology: CoolMOS™ G7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 54A Power dissipation: 120W Case: PG-HDSOP-10-1 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 48 шт: термін постачання 14-21 дні (днів) |
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| IPDD60R150G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 95W Type of transistor: N-MOSFET On-state resistance: 0.15Ω Drain current: 16A Gate charge: 23nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 45A Mounting: SMD кількість в упаковці: 1 шт |
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| IPDD60R190G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PG-HDSOP-10-1 Gate charge: 18nC Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A Drain-source voltage: 600V Drain current: 13A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 76W кількість в упаковці: 1 шт |
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IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Case: PG-TDSON-8 Mounting: SMD Technology: OptiMOS™ T2 Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 20A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 65W Polarisation: unipolar кількість в упаковці: 1 шт |
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IPG20N04S409ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W Type of transistor: N-MOSFET x2 Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 54W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 21.7nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| IPG20N04S4L11ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Pulsed drain current: 80A Power dissipation: 41W Case: PG-TDSON-8-4 Gate-source voltage: ±16V On-state resistance: 11.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| IPG20N10S4L35ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 80A Power dissipation: 43W Case: PG-TDSON-8-4 Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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IPI020N06NAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPI024N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 250W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPI029N06NAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPI030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPI032N06N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPI040N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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IPI041N12N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 120A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPI045N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPI075N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPI076N12N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 100A Power dissipation: 168W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 50 шт |
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IPI086N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 125W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPI111N15N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPI120N04S402AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 158W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 103nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| IPI147N12N3GAKSA1 | INFINEON TECHNOLOGIES |
IPI147N12N3GAKSA1 THT N channel transistors |
товар відсутній |
| IPD65R950CFDBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Power dissipation: 36.7W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Power dissipation: 36.7W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD70N10S312ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Technology: OptiMOS® -T
Mounting: SMD
Case: PG-TO252-3-11
Power dissipation: 125W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 280A
Drain-source voltage: 100V
Drain current: 48A
On-state resistance: 11.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Technology: OptiMOS® -T
Mounting: SMD
Case: PG-TO252-3-11
Power dissipation: 125W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 280A
Drain-source voltage: 100V
Drain current: 48A
On-state resistance: 11.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 2500 шт
товар відсутній
| IPD70N10S3L12ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| IPD70R1K4CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD70R1K4P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD70R2K0CEAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD70R360P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2004 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 56.38 грн |
| 25+ | 47.62 грн |
| 26+ | 41.12 грн |
| 70+ | 38.92 грн |
| IPD70R600P7SAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| IPD70R900P7SAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD78CN10NGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD80P03P4L07ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -65A
Pulsed drain current: -320A
Power dissipation: 88W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -65A
Pulsed drain current: -320A
Power dissipation: 88W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| IPD80R1K0CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| IPD80R1K2P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| IPD80R1K4CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD80R1K4P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| IPD80R280P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| IPD80R2K0P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 1632 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.26 грн |
| 5+ | 57.11 грн |
| 25+ | 42.26 грн |
| 67+ | 39.98 грн |
| IPD80R2K4P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| IPD80R360P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| IPD80R3K3P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| IPD80R450P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
| IPD80R4K5P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 13W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 13W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| IPD80R750P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
| IPD80R900P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| IPD90N03S4L02ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| IPD90N04S304ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 3.6mΩ
Drain current: 90A
Gate charge: 60nC
Drain-source voltage: 40V
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 3.6mΩ
Drain current: 90A
Gate charge: 60nC
Drain-source voltage: 40V
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
| IPD90N04S404ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Polarisation: unipolar
Kind of package: reel
Power dissipation: 71W
Type of transistor: N-MOSFET
On-state resistance: 4.1mΩ
Drain current: 81A
Gate charge: 20nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3-313
Pulsed drain current: 360A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Polarisation: unipolar
Kind of package: reel
Power dissipation: 71W
Type of transistor: N-MOSFET
On-state resistance: 4.1mΩ
Drain current: 81A
Gate charge: 20nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3-313
Pulsed drain current: 360A
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 2433 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 101.24 грн |
| 5+ | 88.5 грн |
| 16+ | 65.01 грн |
| 43+ | 61.5 грн |
| IPD90N04S405ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Mounting: SMD
Case: PG-TO252-3-313
Kind of package: reel
Power dissipation: 65W
Gate charge: 18nC
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 344A
Drain-source voltage: 40V
Drain current: 61A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Mounting: SMD
Case: PG-TO252-3-313
Kind of package: reel
Power dissipation: 65W
Gate charge: 18nC
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 344A
Drain-source voltage: 40V
Drain current: 61A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| IPD90N06S407ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| IPD90P03P4L04ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W
Case: PG-TO252-3-11
Drain-source voltage: -30V
Drain current: -90A
On-state resistance: 4.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 137W
Polarisation: unipolar
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -360A
Mounting: SMD
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W
Case: PG-TO252-3-11
Drain-source voltage: -30V
Drain current: -90A
On-state resistance: 4.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 137W
Polarisation: unipolar
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -360A
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
| IPD90R1K2C3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD90R1K2C3BTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.2A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.2A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPD95R1K2P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 52W
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Drain current: 3.7A
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 52W
Type of transistor: N-MOSFET
On-state resistance: 1.2Ω
Drain current: 3.7A
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| IPD95R2K0P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 37W
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Drain current: 2.4A
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 37W
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Drain current: 2.4A
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| IPD95R450P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
кількість в упаковці: 1 шт
на замовлення 1891 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.83 грн |
| 5+ | 184.3 грн |
| 8+ | 132.66 грн |
| 22+ | 124.76 грн |
| IPD95R750P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: DPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: DPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| IPDD60R050G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Mounting: SMD
Case: PG-HDSOP-10-1
Kind of package: reel; tape
Gate charge: 68nC
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 135A
Drain-source voltage: 600V
Drain current: 47A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Mounting: SMD
Case: PG-HDSOP-10-1
Kind of package: reel; tape
Gate charge: 68nC
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 135A
Drain-source voltage: 600V
Drain current: 47A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| IPDD60R080G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 174W
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Drain current: 29A
Gate charge: 42nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 83A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 174W
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Drain current: 29A
Gate charge: 42nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 83A
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| IPDD60R102G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 139W
Type of transistor: N-MOSFET
On-state resistance: 0.102Ω
Drain current: 23A
Gate charge: 34nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 66A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 139W
Type of transistor: N-MOSFET
On-state resistance: 0.102Ω
Drain current: 23A
Gate charge: 34nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 66A
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| IPDD60R125G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 54A
Power dissipation: 120W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 54A
Power dissipation: 120W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 386.98 грн |
| 5+ | 263.67 грн |
| 12+ | 239.85 грн |
| IPDD60R150G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 95W
Type of transistor: N-MOSFET
On-state resistance: 0.15Ω
Drain current: 16A
Gate charge: 23nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 45A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 95W
Type of transistor: N-MOSFET
On-state resistance: 0.15Ω
Drain current: 16A
Gate charge: 23nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 45A
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| IPDD60R190G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PG-HDSOP-10-1
Gate charge: 18nC
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 76W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PG-HDSOP-10-1
Gate charge: 18nC
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 76W
кількість в упаковці: 1 шт
товар відсутній
| IPG20N04S408ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ T2
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 65W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ T2
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 65W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| IPG20N04S409ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPG20N04S4L11ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 41W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 41W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IPG20N10S4L35ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| IPI020N06NAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI024N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI029N06NAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI030N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI032N06N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI040N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 97.45 грн |
| 4+ | 83.02 грн |
| 10+ | 71.16 грн |
| 16+ | 66.77 грн |
| 43+ | 63.26 грн |
| 250+ | 60.62 грн |
| IPI041N12N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI045N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI075N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI076N12N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Power dissipation: 168W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 50 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Power dissipation: 168W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 50 шт
товар відсутній
| IPI086N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI111N15N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI120N04S402AKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IPI147N12N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
IPI147N12N3GAKSA1 THT N channel transistors
IPI147N12N3GAKSA1 THT N channel transistors
товар відсутній