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IPL60R199CPAUMA1 INFINEON TECHNOLOGIES IPL60R199CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801284dca135b29ba IPL60R199CPAUMA1 SMD N channel transistors
товар відсутній
IPL60R1K5C6SATMA1 INFINEON TECHNOLOGIES DS_IPL60R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d637950016b IPL60R1K5C6SATMA1 SMD N channel transistors
товар відсутній
IPL60R210P6AUMA1 IPL60R210P6AUMA1 INFINEON TECHNOLOGIES IPL60R210P6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL60R285P7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R285P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed0cea5b3c IPL60R285P7 SMD N channel transistors
товар відсутній
IPL60R299CPAUMA1 INFINEON TECHNOLOGIES IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4 IPL60R299CPAUMA1 SMD N channel transistors
товар відсутній
IPL60R2K1C6SATMA1 INFINEON TECHNOLOGIES DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b IPL60R2K1C6SATMA1 SMD N channel transistors
товар відсутній
IPL60R365P7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0 IPL60R365P7 SMD N channel transistors
товар відсутній
IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES IPL60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL60R650P6SATMA1 INFINEON TECHNOLOGIES IPL60R650P6S-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R070C7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R070C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f091901e6b3d IPL65R070C7AUMA1 SMD N channel transistors
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R130C7AUMA1 IPL65R130C7AUMA1 INFINEON TECHNOLOGIES IPL65R130C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 102W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IPL65R165CFDAUMA1 IPL65R165CFDAUMA1 INFINEON TECHNOLOGIES IPL65R165CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IPL65R190E6AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R190E6-DS-v02_00-en.pdf?fileId=db3a304344d727a80144df7870ce0c0c IPL65R190E6AUMA1 SMD N channel transistors
товар відсутній
IPL65R195C7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R195C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f07420a26b18 IPL65R195C7AUMA1 SMD N channel transistors
товар відсутній
IPL65R1K5C6SATMA1 INFINEON TECHNOLOGIES DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a IPL65R1K5C6SATMA1 SMD N channel transistors
на замовлення 6 шт:
термін постачання 14-21 дні (днів)
3+138.64 грн
15+ 73.18 грн
39+ 68.78 грн
Мінімальне замовлення: 3
IPL65R210CFDAUMA1 IPL65R210CFDAUMA1 INFINEON TECHNOLOGIES IPL65R210CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.6A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R230C7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R230C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e798fa6d80332 IPL65R230C7AUMA1 SMD N channel transistors
товар відсутній
IPL65R310E6AUMA1 IPL65R310E6AUMA1 INFINEON TECHNOLOGIES IPL65R310E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 104W; PG-VSON-4
Drain-source voltage: 650V
Drain current: 13.1A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Case: PG-VSON-4
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPL65R340CFDAUMA1 IPL65R340CFDAUMA1 INFINEON TECHNOLOGIES IPL65R340CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4
Mounting: SMD
Drain current: 10.9A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-VSON-4
On-state resistance: 0.34Ω
Power dissipation: 104.2W
Polarisation: unipolar
Technology: CoolMOS™
кількість в упаковці: 1 шт
товар відсутній
IPL65R420E6AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R420E-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b19d39c60132 IPL65R420E6AUMA1 SMD N channel transistors
товар відсутній
IPL65R460CFDAUMA1 IPL65R460CFDAUMA1 INFINEON TECHNOLOGIES IPL65R460CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R660E6AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R660E6-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b1d4c6280166 IPL65R660E6AUMA1 SMD N channel transistors
товар відсутній
IPN50R2K0CEATMA1 IPN50R2K0CEATMA1 INFINEON TECHNOLOGIES IPN50R2K0CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPN50R800CEATMA1 IPN50R800CEATMA1 INFINEON TECHNOLOGIES IPN50R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2906 шт:
термін постачання 14-21 дні (днів)
5+60.77 грн
6+ 46.88 грн
25+ 40.74 грн
26+ 39.33 грн
72+ 37.21 грн
500+ 35.71 грн
Мінімальне замовлення: 5
IPN50R950CEATMA1 IPN50R950CEATMA1 INFINEON TECHNOLOGIES IPN50R950CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.2A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2950 шт:
термін постачання 14-21 дні (днів)
9+32.29 грн
25+ 27.93 грн
50+ 20.63 грн
136+ 19.49 грн
3000+ 18.78 грн
Мінімальне замовлення: 9
IPN60R1K5CEATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IPN60R2K1CEATMA1 IPN60R2K1CEATMA1 INFINEON TECHNOLOGIES IPN60R2K1CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPN60R360P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
IPN60R3K4CEATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.6A; Idm: 3.9A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.6A
Pulsed drain current: 3.9A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IPN60R600P7SATMA1 IPN60R600P7SATMA1 INFINEON TECHNOLOGIES IPN60R600P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN70R1K0CEATMA1 IPN70R1K0CEATMA1 INFINEON TECHNOLOGIES IPN70R1K0CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Technology: CoolMOS™ CE
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 4.7A
On-state resistance: 1Ω
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
кількість в упаковці: 1 шт
товар відсутній
IPN70R1K5CEATMA1 IPN70R1K5CEATMA1 INFINEON TECHNOLOGIES IPN70R1K5CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPN70R360P7SATMA1 IPN70R360P7SATMA1 INFINEON TECHNOLOGIES IPN70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES IPN70R900P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPN80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223
Kind of package: reel
Drain-source voltage: 800V
Drain current: 3.1A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 6.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 11nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
кількість в упаковці: 1 шт
товар відсутній
IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 INFINEON TECHNOLOGIES IPN80R1K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223
Kind of package: reel
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
кількість в упаковці: 1 шт
товар відсутній
IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 INFINEON TECHNOLOGIES IPN80R2K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 6.3W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 INFINEON TECHNOLOGIES IPN80R3K3P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 6.1W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN80R4K5P7ATMA1 IPN80R4K5P7ATMA1 INFINEON TECHNOLOGIES IPN80R4K5P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 6W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2279 шт:
термін постачання 14-21 дні (днів)
3+115.85 грн
6+ 51.09 грн
20+ 44 грн
29+ 36.01 грн
78+ 34.04 грн
Мінімальне замовлення: 3
IPN80R600P7ATMA1 IPN80R600P7ATMA1 INFINEON TECHNOLOGIES IPN80R600P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 7.4W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN80R750P7ATMA1 IPN80R750P7ATMA1 INFINEON TECHNOLOGIES IPN80R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223
Mounting: SMD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 17nC
Technology: CoolMOS™ P7
Case: PG-SOT223
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES IPN80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 INFINEON TECHNOLOGIES IPN95R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN95R2K0P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPN95R2K0P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643719f9a8500c IPN95R2K0P7 SMD N channel transistors
товар відсутній
IPN95R3K7P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPN95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b2dacda55d7 IPN95R3K7P7 SMD N channel transistors
товар відсутній
IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)
1+337.1 грн
5+ 249.06 грн
12+ 226.61 грн
500+ 218.67 грн
IPP019N08NF2SAKMA1 INFINEON TECHNOLOGIES IPP019N08NF2S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 147A
Pulsed drain current: 764A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 124nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP020N06NAKSA1 IPP020N06NAKSA1 INFINEON TECHNOLOGIES IPP020N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES IPP020N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
1+647.6 грн
3+ 432.19 грн
7+ 393.26 грн
250+ 387.08 грн
IPP023N04NGXKSA1 IPP023N04NGXKSA1 INFINEON TECHNOLOGIES IPP023N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP023N08N5AKSA1 IPP023N08N5AKSA1 INFINEON TECHNOLOGIES IPP023N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP023N10N5AKSA1 IPP023N10N5AKSA1 INFINEON TECHNOLOGIES IPP023N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP023NE7N3GXKSA1 IPP023NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP023NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 50 шт
товар відсутній
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES IPP024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 42 шт:
термін постачання 14-21 дні (днів)
1+447.25 грн
3+ 370.84 грн
5+ 251.3 грн
12+ 238.07 грн
250+ 231.9 грн
IPP027N08N5AKSA1 IPP027N08N5AKSA1 INFINEON TECHNOLOGIES IPP027N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP029N06NAKSA1 IPP029N06NAKSA1 INFINEON TECHNOLOGIES IPP029N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)
1+411.16 грн
3+ 356.19 грн
4+ 331.53 грн
9+ 313.02 грн
50+ 300.67 грн
IPP030N10N5AKSA1 IPP030N10N5AKSA1 INFINEON TECHNOLOGIES IPP030N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP032N06N3GXKSA1 IPP032N06N3GXKSA1 INFINEON TECHNOLOGIES IPP032N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 14-21 дні (днів)
2+164.27 грн
10+ 130.94 грн
12+ 92.95 грн
31+ 87.88 грн
1000+ 86.41 грн
Мінімальне замовлення: 2
IPL60R199CPAUMA1 IPL60R199CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801284dca135b29ba
Виробник: INFINEON TECHNOLOGIES
IPL60R199CPAUMA1 SMD N channel transistors
товар відсутній
IPL60R1K5C6SATMA1 DS_IPL60R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d637950016b
Виробник: INFINEON TECHNOLOGIES
IPL60R1K5C6SATMA1 SMD N channel transistors
товар відсутній
IPL60R210P6AUMA1 IPL60R210P6-DTE.pdf
IPL60R210P6AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL60R285P7AUMA1 Infineon-IPL60R285P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed0cea5b3c
Виробник: INFINEON TECHNOLOGIES
IPL60R285P7 SMD N channel transistors
товар відсутній
IPL60R299CPAUMA1 IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4
Виробник: INFINEON TECHNOLOGIES
IPL60R299CPAUMA1 SMD N channel transistors
товар відсутній
IPL60R2K1C6SATMA1 DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b
Виробник: INFINEON TECHNOLOGIES
IPL60R2K1C6SATMA1 SMD N channel transistors
товар відсутній
IPL60R365P7AUMA1 Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0
Виробник: INFINEON TECHNOLOGIES
IPL60R365P7 SMD N channel transistors
товар відсутній
IPL60R385CPAUMA1 IPL60R385CP-DTE.pdf
IPL60R385CPAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL60R650P6SATMA1 IPL60R650P6S-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R070C7AUMA1 Infineon-IPL65R070C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f091901e6b3d
Виробник: INFINEON TECHNOLOGIES
IPL65R070C7AUMA1 SMD N channel transistors
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
IPL65R099C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R130C7AUMA1 IPL65R130C7-DTE.pdf
IPL65R130C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 102W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IPL65R165CFDAUMA1 IPL65R165CFD-DTE.pdf
IPL65R165CFDAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IPL65R190E6AUMA1 Infineon-IPL65R190E6-DS-v02_00-en.pdf?fileId=db3a304344d727a80144df7870ce0c0c
Виробник: INFINEON TECHNOLOGIES
IPL65R190E6AUMA1 SMD N channel transistors
товар відсутній
IPL65R195C7AUMA1 Infineon-IPL65R195C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f07420a26b18
Виробник: INFINEON TECHNOLOGIES
IPL65R195C7AUMA1 SMD N channel transistors
товар відсутній
IPL65R1K5C6SATMA1 DS_IPL65R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d1bcc8e011a
Виробник: INFINEON TECHNOLOGIES
IPL65R1K5C6SATMA1 SMD N channel transistors
на замовлення 6 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+138.64 грн
15+ 73.18 грн
39+ 68.78 грн
Мінімальне замовлення: 3
IPL65R210CFDAUMA1 IPL65R210CFD-DTE.pdf
IPL65R210CFDAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.6A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R230C7AUMA1 Infineon-IPL65R230C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e798fa6d80332
Виробник: INFINEON TECHNOLOGIES
IPL65R230C7AUMA1 SMD N channel transistors
товар відсутній
IPL65R310E6AUMA1 IPL65R310E6-DTE.pdf
IPL65R310E6AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 104W; PG-VSON-4
Drain-source voltage: 650V
Drain current: 13.1A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Case: PG-VSON-4
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPL65R340CFDAUMA1 IPL65R340CFD-DTE.pdf
IPL65R340CFDAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4
Mounting: SMD
Drain current: 10.9A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-VSON-4
On-state resistance: 0.34Ω
Power dissipation: 104.2W
Polarisation: unipolar
Technology: CoolMOS™
кількість в упаковці: 1 шт
товар відсутній
IPL65R420E6AUMA1 Infineon-IPL65R420E-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b19d39c60132
Виробник: INFINEON TECHNOLOGIES
IPL65R420E6AUMA1 SMD N channel transistors
товар відсутній
IPL65R460CFDAUMA1 IPL65R460CFD-DTE.pdf
IPL65R460CFDAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R660E6AUMA1 Infineon-IPL65R660E6-DS-v02_01-en.pdf?fileId=db3a304344ae06150144b1d4c6280166
Виробник: INFINEON TECHNOLOGIES
IPL65R660E6AUMA1 SMD N channel transistors
товар відсутній
IPN50R2K0CEATMA1 IPN50R2K0CE.pdf
IPN50R2K0CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPN50R800CEATMA1 IPN50R800CE.pdf
IPN50R800CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2906 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
5+60.77 грн
6+ 46.88 грн
25+ 40.74 грн
26+ 39.33 грн
72+ 37.21 грн
500+ 35.71 грн
Мінімальне замовлення: 5
IPN50R950CEATMA1 IPN50R950CE.pdf
IPN50R950CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.2A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2950 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
9+32.29 грн
25+ 27.93 грн
50+ 20.63 грн
136+ 19.49 грн
3000+ 18.78 грн
Мінімальне замовлення: 9
IPN60R1K5CEATMA1 Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IPN60R2K1CEATMA1 IPN60R2K1CE.pdf
IPN60R2K1CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
IPN60R3K4CEATMA1 Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.6A; Idm: 3.9A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.6A
Pulsed drain current: 3.9A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
IPN60R600P7SATMA1 IPN60R600P7S.pdf
IPN60R600P7SATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN70R1K0CEATMA1 IPN70R1K0CE.pdf
IPN70R1K0CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Technology: CoolMOS™ CE
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 4.7A
On-state resistance: 1Ω
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
кількість в упаковці: 1 шт
товар відсутній
IPN70R1K5CEATMA1 IPN70R1K5CE.pdf
IPN70R1K5CEATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPN70R360P7SATMA1 IPN70R360P7S.pdf
IPN70R360P7SATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
IPN70R900P7SATMA1 IPN70R900P7S.pdf
IPN70R900P7SATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
IPN80R1K2P7ATMA1 IPN80R1K2P7.pdf
IPN80R1K2P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223
Kind of package: reel
Drain-source voltage: 800V
Drain current: 3.1A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 6.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 11nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
кількість в упаковці: 1 шт
товар відсутній
IPN80R1K4P7ATMA1 IPN80R1K4P7.pdf
IPN80R1K4P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223
Kind of package: reel
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
кількість в упаковці: 1 шт
товар відсутній
IPN80R2K4P7ATMA1 IPN80R2K4P7.pdf
IPN80R2K4P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 6.3W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN80R3K3P7ATMA1 IPN80R3K3P7.pdf
IPN80R3K3P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 6.1W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN80R4K5P7ATMA1 IPN80R4K5P7.pdf
IPN80R4K5P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 6W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2279 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+115.85 грн
6+ 51.09 грн
20+ 44 грн
29+ 36.01 грн
78+ 34.04 грн
Мінімальне замовлення: 3
IPN80R600P7ATMA1 IPN80R600P7.pdf
IPN80R600P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 7.4W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN80R750P7ATMA1 IPN80R750P7.pdf
IPN80R750P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223
Mounting: SMD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 17nC
Technology: CoolMOS™ P7
Case: PG-SOT223
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPN80R900P7ATMA1 IPN80R900P7.pdf
IPN80R900P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN95R1K2P7ATMA1 IPN95R1K2P7.pdf
IPN95R1K2P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPN95R2K0P7ATMA1 Infineon-IPN95R2K0P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643719f9a8500c
Виробник: INFINEON TECHNOLOGIES
IPN95R2K0P7 SMD N channel transistors
товар відсутній
IPN95R3K7P7ATMA1 Infineon-IPN95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b2dacda55d7
Виробник: INFINEON TECHNOLOGIES
IPN95R3K7P7 SMD N channel transistors
товар відсутній
IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
IPP015N04NGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+337.1 грн
5+ 249.06 грн
12+ 226.61 грн
500+ 218.67 грн
IPP019N08NF2SAKMA1 IPP019N08NF2S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 147A
Pulsed drain current: 764A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 124nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP020N06NAKSA1 IPP020N06NAKSA1-DTE.pdf
IPP020N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP020N08N5AKSA1 IPP020N08N5-DTE.pdf
IPP020N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+647.6 грн
3+ 432.19 грн
7+ 393.26 грн
250+ 387.08 грн
IPP023N04NGXKSA1 IPP023N04NG-DTE.pdf
IPP023N04NGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP023N08N5AKSA1 IPP023N08N5-DTE.pdf
IPP023N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP023N10N5AKSA1 IPP023N10N5-DTE.pdf
IPP023N10N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP023NE7N3GXKSA1 IPP023NE7N3G-DTE.pdf
IPP023NE7N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 50 шт
товар відсутній
IPP024N06N3GXKSA1 IPP024N06N3G-DTE.pdf
IPP024N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 42 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+447.25 грн
3+ 370.84 грн
5+ 251.3 грн
12+ 238.07 грн
250+ 231.9 грн
IPP027N08N5AKSA1 IPP027N08N5-DTE.pdf
IPP027N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP029N06NAKSA1 IPP029N06NAKSA1-DTE.pdf
IPP029N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
IPP030N10N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+411.16 грн
3+ 356.19 грн
4+ 331.53 грн
9+ 313.02 грн
50+ 300.67 грн
IPP030N10N5AKSA1 IPP030N10N5-DTE.pdf
IPP030N10N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP032N06N3GXKSA1 IPP032N06N3G-DTE.pdf
IPP032N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+164.27 грн
10+ 130.94 грн
12+ 92.95 грн
31+ 87.88 грн
1000+ 86.41 грн
Мінімальне замовлення: 2
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