IPP80N06S2H5AKSA2 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 176+ | 120.21 грн |
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Технічний опис IPP80N06S2H5AKSA2 Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 230µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V.
Інші пропозиції IPP80N06S2H5AKSA2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IPP80N06S2H5AKSA2 | Виробник : Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IPP80N06S2H5AKSA2 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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IPP80N06S2H5AKSA2 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Gate charge: 116nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPP80N06S2H5AKSA2 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
товар відсутній |
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IPP80N06S2H5AKSA2 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Gate charge: 116nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |