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IPP60R950C6XKSA1 Infineon Technologies

Name: IPP60R950C6XKSA1
Brand: Infineon Technologies
SKU: 11526586-3
Price: 31.32 UAH
Availability: InStock

IPP60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd012297f4f9f644cb

Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V

на замовлення 74450 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
666+	31.32 грн

Мінімальне замовлення: 666

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Технічний опис IPP60R950C6XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 4.4A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V.

Інші пропозиції IPP60R950C6XKSA1

Назва	Виробник	Інформація	Доступність
IPP60R950C6XKSA1	Виробник : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 37W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 500 шт	товар відсутній
IPP60R950C6XKSA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 600V 4.4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V	товар відсутній
IPP60R950C6XKSA1	Виробник : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 37W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhanced	товар відсутній