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IPZ40N04S5L-2R8 IPZ40N04S5L-2R8 INFINEON TECHNOLOGIES IPZ40N04S5L-2R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
IPZ40N04S5L-4R8 IPZ40N04S5L-4R8 INFINEON TECHNOLOGIES IPZ40N04S5L-4R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
IPZ40N04S5L-7R4 IPZ40N04S5L-7R4 INFINEON TECHNOLOGIES IPZ40N04S5L-7R4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 34W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 10.7mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
IPZ60R017C7XKSA1 IPZ60R017C7XKSA1 INFINEON TECHNOLOGIES IPZ60R017C7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES IPZ60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO247-4
Drain-source voltage: 600V
Drain current: 50A
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
1+1211.65 грн
3+ 1105.19 грн
10+ 1055.44 грн
30+ 1022.82 грн
IPZ65R019C7XKSA1 INFINEON TECHNOLOGIES IPZ65R019C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 75A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZ65R045C7XKSA1 INFINEON TECHNOLOGIES IPZ65R045C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 46A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZ65R065C7XKSA1 INFINEON TECHNOLOGIES IPZ65R065C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 171W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZ65R095C7XKSA1 INFINEON TECHNOLOGIES IPZ65R095C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R024P7XKSA1 INFINEON TECHNOLOGIES IPZA60R024P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 164nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 386A
Drain-source voltage: 650V
Drain current: 63A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 291W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R037P7XKSA1 IPZA60R037P7XKSA1 INFINEON TECHNOLOGIES IPZA60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 121nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 255W
Polarisation: unipolar
кількість в упаковці: 240 шт
товар відсутній
IPZA60R045P7XKSA1 INFINEON TECHNOLOGIES IPZA60R045P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 206A
Power dissipation: 201W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 INFINEON TECHNOLOGIES IPZA60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
IPZA60R080P7XKSA1 IPZA60R080P7XKSA1 INFINEON TECHNOLOGIES IPZA60R080P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 129W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R099P7XKSA1 IPZA60R099P7XKSA1 INFINEON TECHNOLOGIES IPZA60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 45nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Power dissipation: 117W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R120P7XKSA1 IPZA60R120P7XKSA1 INFINEON TECHNOLOGIES IPZA60R120P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 36nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 INFINEON TECHNOLOGIES IPZA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 25nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 72W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IR1161LTRPBF IR1161LTRPBF INFINEON TECHNOLOGIES IR1161LTRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
кількість в упаковці: 3000 шт
товар відсутній
IR11672ASTRPBF INFINEON TECHNOLOGIES ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
кількість в упаковці: 1 шт
товар відсутній
IR11688STRPBF IR11688STRPBF INFINEON TECHNOLOGIES IR11688STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
кількість в упаковці: 2500 шт
товар відсутній
IR1169STRPBF IR1169STRPBF INFINEON TECHNOLOGIES IR1169STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
кількість в упаковці: 2500 шт
товар відсутній
IR2010PBF IR2010PBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
1+585.88 грн
3+ 393.73 грн
8+ 358.87 грн
25+ 357.99 грн
IR2010SPBF IR2010SPBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
кількість в упаковці: 1980 шт
товар відсутній
IR2010STRPBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
кількість в упаковці: 1 шт
товар відсутній
IR2011PBF IR2011PBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
кількість в упаковці: 1 шт
товар відсутній
IR2011SPBF IR2011SPBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
кількість в упаковці: 1 шт
на замовлення 85 шт:
термін постачання 14-21 дні (днів)
1+296.26 грн
5+ 257.3 грн
6+ 189.57 грн
15+ 179.87 грн
95+ 171.94 грн
IR2085STRPBF IR2085STRPBF INFINEON TECHNOLOGIES Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Operating temperature: -40...125°C
Power: 1W
Supply voltage: 10...15V DC
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
товар відсутній
IR2101PBF IR2101PBF INFINEON TECHNOLOGIES ir2101.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
1+307.66 грн
8+ 147.42 грн
21+ 134.02 грн
IR2101SPBF IR2101SPBF INFINEON TECHNOLOGIES IR2101SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 546 шт:
термін постачання 14-21 дні (днів)
3+135.79 грн
5+ 119.03 грн
13+ 83.77 грн
35+ 79.36 грн
Мінімальне замовлення: 3
IR2101STRPBF IR2101STRPBF INFINEON TECHNOLOGIES IR2101SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 3238 шт:
термін постачання 14-21 дні (днів)
3+128.19 грн
16+ 70.51 грн
42+ 64.37 грн
1000+ 61.72 грн
Мінімальне замовлення: 3
IR2102SPBF IR2102SPBF INFINEON TECHNOLOGIES ir2101_2102.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
товар відсутній
IR2102STRPBF IR2102STRPBF INFINEON TECHNOLOGIES IRSDS17613-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 1978 шт:
термін постачання 14-21 дні (днів)
3+118.7 грн
5+ 103.47 грн
13+ 84.65 грн
34+ 79.36 грн
500+ 77.59 грн
Мінімальне замовлення: 3
IR2103STRPBF IR2103STRPBF INFINEON TECHNOLOGIES ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 291 шт:
термін постачання 14-21 дні (днів)
3+120.59 грн
5+ 104.38 грн
12+ 86.41 грн
33+ 82 грн
100+ 81.12 грн
500+ 78.47 грн
Мінімальне замовлення: 3
IR2104PBF IR2104PBF INFINEON TECHNOLOGIES IR2104PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 97 шт:
термін постачання 14-21 дні (днів)
2+226.95 грн
3+ 197.78 грн
8+ 145.49 грн
20+ 137.55 грн
Мінімальне замовлення: 2
IR2104SPBF IR2104SPBF INFINEON TECHNOLOGIES ir2104.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 166 шт:
термін постачання 14-21 дні (днів)
2+206.06 грн
10+ 155.66 грн
11+ 98.75 грн
29+ 93.46 грн
3800+ 90.82 грн
Мінімальне замовлення: 2
IR2104STRPBF IR2104STRPBF INFINEON TECHNOLOGIES IR2104PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 2349 шт:
термін постачання 14-21 дні (днів)
3+103.5 грн
20+ 55.76 грн
54+ 50.79 грн
2500+ 49.2 грн
Мінімальне замовлення: 3
IR21064PBF IR21064PBF INFINEON TECHNOLOGIES ir2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -350...200mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IR2106SPBF IR2106SPBF INFINEON TECHNOLOGIES ir2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 55 шт:
термін постачання 14-21 дні (днів)
2+237.39 грн
5+ 205.11 грн
7+ 151.39 грн
19+ 143.13 грн
Мінімальне замовлення: 2
IR2106STRPBF IR2106STRPBF INFINEON TECHNOLOGIES ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 1371 шт:
термін постачання 14-21 дні (днів)
3+118.7 грн
5+ 103.47 грн
13+ 84.65 грн
34+ 80.24 грн
100+ 79.36 грн
500+ 77.59 грн
Мінімальне замовлення: 3
IR21094SPBF IR21094SPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)
2+161.43 грн
3+ 136.43 грн
10+ 103.16 грн
28+ 97.87 грн
Мінімальне замовлення: 2
IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 2499 шт:
термін постачання 14-21 дні (днів)
2+151.93 грн
10+ 122.7 грн
13+ 81.12 грн
35+ 76.71 грн
2500+ 74.07 грн
Мінімальне замовлення: 2
IR2109PBF IR2109PBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)
2+227.9 грн
3+ 197.78 грн
8+ 146.37 грн
20+ 138.43 грн
Мінімальне замовлення: 2
IR2109STRPBF IR2109STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 1800 шт:
термін постачання 14-21 дні (днів)
3+113 грн
5+ 98.89 грн
12+ 90.82 грн
25+ 88.17 грн
31+ 86.41 грн
100+ 82.88 грн
Мінімальне замовлення: 3
IR2110PBF IR2110PBF INFINEON TECHNOLOGIES ir2110_2113.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP14
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.6W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
товар відсутній
IR2110SPBF IR2110SPBF INFINEON TECHNOLOGIES ir2110_2113.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 315 шт:
термін постачання 14-21 дні (днів)
2+199.41 грн
8+ 134.6 грн
22+ 122.56 грн
Мінімальне замовлення: 2
IR2110STRPBF IR2110STRPBF INFINEON TECHNOLOGIES IR2110STRPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 257 шт:
термін постачання 14-21 дні (днів)
2+215.55 грн
9+ 126.36 грн
24+ 114.63 грн
1000+ 110.22 грн
Мінімальне замовлення: 2
IR2111PBF IR2111PBF INFINEON TECHNOLOGIES ir2111.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)
2+207.95 грн
3+ 180.38 грн
8+ 134.91 грн
22+ 127.85 грн
50+ 126.97 грн
Мінімальне замовлення: 2
IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES IR2111SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)
2+201.31 грн
5+ 173.97 грн
8+ 129.62 грн
22+ 122.56 грн
95+ 119.92 грн
Мінімальне замовлення: 2
IR2112PBF IR2112PBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: tube
Turn-off time: 145ns
Turn-on time: 205ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP14
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 1.6W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)
2+257.33 грн
3+ 218.84 грн
6+ 183.4 грн
16+ 173.7 грн
Мінімальне замовлення: 2
IR2112SPBF IR2112SPBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: tube
Turn-off time: 145ns
Turn-on time: 205ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 1.25W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)
1+295.31 грн
3+ 255.47 грн
6+ 182.52 грн
16+ 172.82 грн
IR2112STRPBF IR2112STRPBF INFINEON TECHNOLOGIES IR2112STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: reel; tape
Turn-off time: 145ns
Turn-on time: 205ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 1.25W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
на замовлення 1123 шт:
термін постачання 14-21 дні (днів)
2+190.86 грн
5+ 163.9 грн
8+ 137.55 грн
21+ 129.62 грн
Мінімальне замовлення: 2
IR2113PBF IR2113PBF INFINEON TECHNOLOGIES ir2110_2113.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 82 шт:
термін постачання 14-21 дні (днів)
2+279.17 грн
7+ 158.41 грн
19+ 144.61 грн
1500+ 142.84 грн
Мінімальне замовлення: 2
IR2113SPBF IR2113SPBF INFINEON TECHNOLOGIES IR2113SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 125 шт:
термін постачання 14-21 дні (днів)
1+317.15 грн
3+ 274.7 грн
6+ 202.8 грн
15+ 191.34 грн
IR2113STRPBF IR2113STRPBF INFINEON TECHNOLOGIES IR2113STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 1256 шт:
термін постачання 14-21 дні (днів)
2+197.51 грн
10+ 117.2 грн
26+ 106.69 грн
2000+ 102.28 грн
Мінімальне замовлення: 2
IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES IR2114SSPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Turn-off time: 440ns
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)
1+820.42 грн
2+ 606.16 грн
3+ 582.83 грн
5+ 551.09 грн
IR2117PBF IR2117PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 338 шт:
термін постачання 14-21 дні (днів)
2+279.17 грн
8+ 152 грн
20+ 138.43 грн
1000+ 133.14 грн
Мінімальне замовлення: 2
IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 177 шт:
термін постачання 14-21 дні (днів)
3+132.94 грн
5+ 114.46 грн
13+ 85.53 грн
34+ 81.12 грн
Мінімальне замовлення: 3
IR2118PBF IR2118PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 125ns
Supply voltage: 10...20V DC
Number of channels: 1
Case: DIP8
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Power: 1W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
товар відсутній
IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 125ns
Supply voltage: 10...20V DC
Number of channels: 1
Case: SO8
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Power: 625mW
Type of integrated circuit: driver
кількість в упаковці: 1 шт
товар відсутній
IR2121PBF IR2121PBF INFINEON TECHNOLOGIES ir2121.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Mounting: THT
Operating temperature: -40...125°C
Case: DIP8
Kind of package: tube
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 5V
Power: 1W
Supply voltage: 12...18V DC
Turn-on time: 150ns
Turn-off time: 105ns
Output current: -2...1A
кількість в упаковці: 1 шт
на замовлення 178 шт:
термін постачання 14-21 дні (днів)
2+272.53 грн
3+ 236.24 грн
6+ 176.35 грн
17+ 166.65 грн
50+ 162.24 грн
Мінімальне замовлення: 2
IPZ40N04S5L-2R8 IPZ40N04S5L-2R8.pdf
IPZ40N04S5L-2R8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
IPZ40N04S5L-4R8 IPZ40N04S5L-4R8.pdf
IPZ40N04S5L-4R8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
IPZ40N04S5L-7R4 IPZ40N04S5L-7R4.pdf
IPZ40N04S5L-7R4
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 34W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 10.7mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
IPZ60R017C7XKSA1 IPZ60R017C7.pdf
IPZ60R017C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZ60R040C7XKSA1 IPZ60R040C7-DTE.pdf
IPZ60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO247-4
Drain-source voltage: 600V
Drain current: 50A
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1211.65 грн
3+ 1105.19 грн
10+ 1055.44 грн
30+ 1022.82 грн
IPZ65R019C7XKSA1 IPZ65R019C7-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 75A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZ65R045C7XKSA1 IPZ65R045C7-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 46A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZ65R065C7XKSA1 IPZ65R065C7-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 171W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZ65R095C7XKSA1 IPZ65R095C7-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R024P7XKSA1 IPZA60R024P7.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 164nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 386A
Drain-source voltage: 650V
Drain current: 63A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 291W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R037P7XKSA1 IPZA60R037P7.pdf
IPZA60R037P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 121nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 255W
Polarisation: unipolar
кількість в упаковці: 240 шт
товар відсутній
IPZA60R045P7XKSA1 IPZA60R045P7.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 206A
Power dissipation: 201W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
IPZA60R060P7XKSA1 IPZA60R060P7.pdf
IPZA60R060P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
IPZA60R080P7XKSA1 IPZA60R080P7.pdf
IPZA60R080P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 129W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R099P7XKSA1 IPZA60R099P7.pdf
IPZA60R099P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 45nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Power dissipation: 117W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R120P7XKSA1 IPZA60R120P7.pdf
IPZA60R120P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 36nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPZA60R180P7XKSA1 IPZA60R180P7.pdf
IPZA60R180P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 25nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 72W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IR1161LTRPBF IR1161LTRPBF.pdf
IR1161LTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Case: SOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
кількість в упаковці: 3000 шт
товар відсутній
IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
кількість в упаковці: 1 шт
товар відсутній
IR11688STRPBF IR11688STRPBF.pdf
IR11688STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
кількість в упаковці: 2500 шт
товар відсутній
IR1169STRPBF IR1169STRPBF.pdf
IR1169STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
кількість в упаковці: 2500 шт
товар відсутній
IR2010PBF IR2010SPBF.pdf
IR2010PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+585.88 грн
3+ 393.73 грн
8+ 358.87 грн
25+ 357.99 грн
IR2010SPBF IR2010SPBF.pdf
IR2010SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
кількість в упаковці: 1980 шт
товар відсутній
IR2010STRPBF IR2010SPBF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
кількість в упаковці: 1 шт
товар відсутній
IR2011PBF description IR2011SPBF.pdf
IR2011PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
кількість в упаковці: 1 шт
товар відсутній
IR2011SPBF description IR2011SPBF.pdf
IR2011SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
кількість в упаковці: 1 шт
на замовлення 85 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+296.26 грн
5+ 257.3 грн
6+ 189.57 грн
15+ 179.87 грн
95+ 171.94 грн
IR2085STRPBF Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828
IR2085STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Operating temperature: -40...125°C
Power: 1W
Supply voltage: 10...15V DC
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
товар відсутній
IR2101PBF description ir2101.pdf
IR2101PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+307.66 грн
8+ 147.42 грн
21+ 134.02 грн
IR2101SPBF description IR2101SPBF.pdf
IR2101SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 546 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+135.79 грн
5+ 119.03 грн
13+ 83.77 грн
35+ 79.36 грн
Мінімальне замовлення: 3
IR2101STRPBF description IR2101SPBF.pdf
IR2101STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 3238 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+128.19 грн
16+ 70.51 грн
42+ 64.37 грн
1000+ 61.72 грн
Мінімальне замовлення: 3
IR2102SPBF description ir2101_2102.pdf
IR2102SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
товар відсутній
IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 1978 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+118.7 грн
5+ 103.47 грн
13+ 84.65 грн
34+ 79.36 грн
500+ 77.59 грн
Мінімальне замовлення: 3
IR2103STRPBF description ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 291 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+120.59 грн
5+ 104.38 грн
12+ 86.41 грн
33+ 82 грн
100+ 81.12 грн
500+ 78.47 грн
Мінімальне замовлення: 3
IR2104PBF description IR2104PBF.pdf
IR2104PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 97 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+226.95 грн
3+ 197.78 грн
8+ 145.49 грн
20+ 137.55 грн
Мінімальне замовлення: 2
IR2104SPBF description ir2104.pdf
IR2104SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 166 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+206.06 грн
10+ 155.66 грн
11+ 98.75 грн
29+ 93.46 грн
3800+ 90.82 грн
Мінімальне замовлення: 2
IR2104STRPBF description IR2104PBF.pdf
IR2104STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
кількість в упаковці: 1 шт
на замовлення 2349 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+103.5 грн
20+ 55.76 грн
54+ 50.79 грн
2500+ 49.2 грн
Мінімальне замовлення: 3
IR21064PBF ir2106.pdf
IR21064PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -350...200mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IR2106SPBF ir2106.pdf
IR2106SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 55 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+237.39 грн
5+ 205.11 грн
7+ 151.39 грн
19+ 143.13 грн
Мінімальне замовлення: 2
IR2106STRPBF description ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 1371 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+118.7 грн
5+ 103.47 грн
13+ 84.65 грн
34+ 80.24 грн
100+ 79.36 грн
500+ 77.59 грн
Мінімальне замовлення: 3
IR21094SPBF IR21094SPBF.pdf
IR21094SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+161.43 грн
3+ 136.43 грн
10+ 103.16 грн
28+ 97.87 грн
Мінімальне замовлення: 2
IR21094STRPBF IR21094SPBF.pdf
IR21094STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 2499 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+151.93 грн
10+ 122.7 грн
13+ 81.12 грн
35+ 76.71 грн
2500+ 74.07 грн
Мінімальне замовлення: 2
IR2109PBF IR21094SPBF.pdf
IR2109PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+227.9 грн
3+ 197.78 грн
8+ 146.37 грн
20+ 138.43 грн
Мінімальне замовлення: 2
IR2109STRPBF IR21094SPBF.pdf
IR2109STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 1800 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+113 грн
5+ 98.89 грн
12+ 90.82 грн
25+ 88.17 грн
31+ 86.41 грн
100+ 82.88 грн
Мінімальне замовлення: 3
IR2110PBF ir2110_2113.pdf
IR2110PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP14
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.6W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
товар відсутній
IR2110SPBF description ir2110_2113.pdf
IR2110SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 315 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+199.41 грн
8+ 134.6 грн
22+ 122.56 грн
Мінімальне замовлення: 2
IR2110STRPBF description IR2110STRPBF.pdf
IR2110STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 257 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+215.55 грн
9+ 126.36 грн
24+ 114.63 грн
1000+ 110.22 грн
Мінімальне замовлення: 2
IR2111PBF description ir2111.pdf
IR2111PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+207.95 грн
3+ 180.38 грн
8+ 134.91 грн
22+ 127.85 грн
50+ 126.97 грн
Мінімальне замовлення: 2
IR2111SPBF description IR2111SPBF.pdf
IR2111SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+201.31 грн
5+ 173.97 грн
8+ 129.62 грн
22+ 122.56 грн
95+ 119.92 грн
Мінімальне замовлення: 2
IR2112PBF description ir2112.pdf
IR2112PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: tube
Turn-off time: 145ns
Turn-on time: 205ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP14
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 1.6W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+257.33 грн
3+ 218.84 грн
6+ 183.4 грн
16+ 173.7 грн
Мінімальне замовлення: 2
IR2112SPBF description ir2112.pdf
IR2112SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: tube
Turn-off time: 145ns
Turn-on time: 205ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 1.25W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+295.31 грн
3+ 255.47 грн
6+ 182.52 грн
16+ 172.82 грн
IR2112STRPBF IR2112STRPBF.pdf
IR2112STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: reel; tape
Turn-off time: 145ns
Turn-on time: 205ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 1.25W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
на замовлення 1123 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+190.86 грн
5+ 163.9 грн
8+ 137.55 грн
21+ 129.62 грн
Мінімальне замовлення: 2
IR2113PBF description ir2110_2113.pdf
IR2113PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 82 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+279.17 грн
7+ 158.41 грн
19+ 144.61 грн
1500+ 142.84 грн
Мінімальне замовлення: 2
IR2113SPBF description IR2113SPBF.pdf
IR2113SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 125 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+317.15 грн
3+ 274.7 грн
6+ 202.8 грн
15+ 191.34 грн
IR2113STRPBF IR2113STRPBF.pdf
IR2113STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
кількість в упаковці: 1 шт
на замовлення 1256 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+197.51 грн
10+ 117.2 грн
26+ 106.69 грн
2000+ 102.28 грн
Мінімальне замовлення: 2
IR2114SSPBF IR2114SSPBF.pdf
IR2114SSPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Turn-off time: 440ns
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+820.42 грн
2+ 606.16 грн
3+ 582.83 грн
5+ 551.09 грн
IR2117PBF ir2117.pdf
IR2117PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 338 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+279.17 грн
8+ 152 грн
20+ 138.43 грн
1000+ 133.14 грн
Мінімальне замовлення: 2
IR2117SPBF description ir2117.pdf
IR2117SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 177 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+132.94 грн
5+ 114.46 грн
13+ 85.53 грн
34+ 81.12 грн
Мінімальне замовлення: 3
IR2118PBF ir2117.pdf
IR2118PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 125ns
Supply voltage: 10...20V DC
Number of channels: 1
Case: DIP8
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Power: 1W
Type of integrated circuit: driver
кількість в упаковці: 1 шт
товар відсутній
IR2118SPBF description ir2117.pdf
IR2118SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 125ns
Supply voltage: 10...20V DC
Number of channels: 1
Case: SO8
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Power: 625mW
Type of integrated circuit: driver
кількість в упаковці: 1 шт
товар відсутній
IR2121PBF ir2121.pdf
IR2121PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Mounting: THT
Operating temperature: -40...125°C
Case: DIP8
Kind of package: tube
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 5V
Power: 1W
Supply voltage: 12...18V DC
Turn-on time: 150ns
Turn-off time: 105ns
Output current: -2...1A
кількість в упаковці: 1 шт
на замовлення 178 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+272.53 грн
3+ 236.24 грн
6+ 176.35 грн
17+ 166.65 грн
50+ 162.24 грн
Мінімальне замовлення: 2
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