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IPU95R1K2P7AKMA1 IPU95R1K2P7AKMA1 INFINEON TECHNOLOGIES IPU95R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPU95R2K0P7AKMA1 IPU95R2K0P7AKMA1 INFINEON TECHNOLOGIES IPU95R2K0P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Mounting: THT
Power dissipation: 37W
Technology: CoolMOS™ P7
Features of semiconductor devices: ESD protected gate
Kind of package: tube
Gate charge: 10nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 950V
On-state resistance: 2Ω
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 1271 шт:
термін постачання 14-21 дні (днів)
5+64.57 грн
6+ 45.78 грн
24+ 41.44 грн
25+ 40.56 грн
66+ 38.8 грн
Мінімальне замовлення: 5
IPU95R3K7P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPU95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c3bd81e57e6 IPU95R3K7P7 THT N channel transistors
товар відсутній
IPU95R450P7AKMA1 IPU95R450P7AKMA1 INFINEON TECHNOLOGIES IPU95R450P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
кількість в упаковці: 1 шт
товар відсутній
IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES IPU95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: IPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPW50R280CEFKSA1 IPW50R280CEFKSA1 INFINEON TECHNOLOGIES IPW50R280CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 92W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES IPW60R031CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
1+1154.67 грн
2+ 981.58 грн
3+ 893.2 грн
30+ 857.05 грн
IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES IPW60R037CSFDXKSA1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES IPW60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
1+1172.71 грн
2+ 862.54 грн
4+ 785.63 грн
10+ 784.75 грн
IPW60R040C7XKSA1 IPW60R040C7XKSA1 INFINEON TECHNOLOGIES IPW60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 50A
кількість в упаковці: 1 шт
товар відсутній
IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES IPW60R041C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
1+1255.33 грн
3+ 1144.57 грн
IPW60R041P6FKSA1 IPW60R041P6FKSA1 INFINEON TECHNOLOGIES IPW60R041P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R045CPFKSA1 IPW60R045CPFKSA1 INFINEON TECHNOLOGIES IPW60R045CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES IPW60R070C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES IPW60R070CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES IPW60R070P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES IPW60R075CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R080P7 IPW60R080P7 INFINEON TECHNOLOGIES IPW60R080P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES IPW60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES IPW60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES IPW60R099CP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
1+1091.05 грн
2+ 729.77 грн
5+ 663.95 грн
IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES IPW60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+436.8 грн
4+ 343.37 грн
9+ 313.02 грн
25+ 311.25 грн
30+ 299.79 грн
IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES IPW60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES IPW60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES IPW60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R160C6FKSA1 IPW60R160C6FKSA1 INFINEON TECHNOLOGIES IPW60R160C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R160P6FKSA1 IPW60R160P6FKSA1 INFINEON TECHNOLOGIES IPW60R160P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R165CPFKSA1 IPW60R165CPFKSA1 INFINEON TECHNOLOGIES IPW60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R170CFD7 IPW60R170CFD7 INFINEON TECHNOLOGIES IPW60R170CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R180C7XKSA1 IPW60R180C7XKSA1 INFINEON TECHNOLOGIES IPW60R180C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R180P7XKSA1 IPW60R180P7XKSA1 INFINEON TECHNOLOGIES IPW60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPW60R190C6FKSA1 IPW60R190C6FKSA1 INFINEON TECHNOLOGIES IPW60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 61 шт:
термін постачання 14-21 дні (днів)
1+387.42 грн
3+ 329.63 грн
4+ 275.98 грн
11+ 260.99 грн
IPW60R190E6FKSA1 IPW60R190E6FKSA1 INFINEON TECHNOLOGIES IPW60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES IPW60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R199CPFKSA1 IPW60R199CPFKSA1 INFINEON TECHNOLOGIES IPW60R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R280C6FKSA1 IPW60R280C6FKSA1 INFINEON TECHNOLOGIES IPW60R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R280E6FKSA1 IPW60R280E6FKSA1 INFINEON TECHNOLOGIES IPW60R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R280P6FKSA1 IPW60R280P6FKSA1 INFINEON TECHNOLOGIES IPW60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 60 шт
товар відсутній
IPW60R299CPFKSA1 IPW60R299CPFKSA1 INFINEON TECHNOLOGIES IPW60R299CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R330P6FKSA1 IPW60R330P6FKSA1 INFINEON TECHNOLOGIES IPW60R330P6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R019C7FKSA1 IPW65R019C7FKSA1 INFINEON TECHNOLOGIES IPW65R019C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 446W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R037C6FKSA1 IPW65R037C6FKSA1 INFINEON TECHNOLOGIES IPW65R037C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 83.2A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R041CFDFKSA1 IPW65R041CFDFKSA1 INFINEON TECHNOLOGIES IPW65R041CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R045C7FKSA1 IPW65R045C7FKSA1 INFINEON TECHNOLOGIES IPW65R045C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R065C7XKSA1 IPW65R065C7XKSA1 INFINEON TECHNOLOGIES IPW65R065C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R070C6FKSA1 IPW65R070C6FKSA1 INFINEON TECHNOLOGIES IPW65R070C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R080CFDA IPW65R080CFDA INFINEON TECHNOLOGIES IPW65R080CFDA.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R080CFDFKSA1 IPW65R080CFDFKSA1 INFINEON TECHNOLOGIES IPW65R080CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R125C7XKSA1 IPW65R125C7XKSA1 INFINEON TECHNOLOGIES IPW65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R190CFDFKSA1 IPW65R190CFDFKSA1 INFINEON TECHNOLOGIES IPW65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R280C6FKSA1 IPW65R280C6FKSA1 INFINEON TECHNOLOGIES IPW65R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R310CFDFKSA1 IPW65R310CFDFKSA1 INFINEON TECHNOLOGIES IPW65R310CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES IPW65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)
2+238.34 грн
3+ 206.02 грн
6+ 191.34 грн
10+ 185.17 грн
15+ 181.64 грн
30+ 174.58 грн
Мінімальне замовлення: 2
IPW65R660CFDFKSA1 IPW65R660CFDFKSA1 INFINEON TECHNOLOGIES IPW65R660CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 62.5W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW80R280P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e96482cb07dc IPW80R280P7 THT N channel transistors
на замовлення 112 шт:
термін постачання 14-21 дні (днів)
1+422.56 грн
4+ 257.47 грн
11+ 242.48 грн
IPW80R360P7XKSA1 IPW80R360P7XKSA1 INFINEON TECHNOLOGIES IPW80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPW90R800C3FKSA1 IPW90R800C3FKSA1 INFINEON TECHNOLOGIES IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPZ40N04S53R1ATMA1 IPZ40N04S53R1ATMA1 INFINEON TECHNOLOGIES IPZ40N04S53R1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
IPZ40N04S5-5R4 IPZ40N04S5-5R4 INFINEON TECHNOLOGIES IPZ40N04S5-5R4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
IPZ40N04S5-8R4 IPZ40N04S5-8R4 INFINEON TECHNOLOGIES IPZ40N04S5-8R4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 34W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
IPU95R1K2P7AKMA1 IPU95R1K2P7.pdf
IPU95R1K2P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPU95R2K0P7AKMA1 IPU95R2K0P7.pdf
IPU95R2K0P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Mounting: THT
Power dissipation: 37W
Technology: CoolMOS™ P7
Features of semiconductor devices: ESD protected gate
Kind of package: tube
Gate charge: 10nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 950V
On-state resistance: 2Ω
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 1271 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
5+64.57 грн
6+ 45.78 грн
24+ 41.44 грн
25+ 40.56 грн
66+ 38.8 грн
Мінімальне замовлення: 5
IPU95R3K7P7AKMA1 Infineon-IPU95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c3bd81e57e6
Виробник: INFINEON TECHNOLOGIES
IPU95R3K7P7 THT N channel transistors
товар відсутній
IPU95R450P7AKMA1 IPU95R450P7.pdf
IPU95R450P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
кількість в упаковці: 1 шт
товар відсутній
IPU95R750P7AKMA1 IPU95R750P7.pdf
IPU95R750P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: IPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPW50R280CEFKSA1 IPW50R280CE-DTE.pdf
IPW50R280CEFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 92W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R031CFD7 IPW60R031CFD7.pdf
IPW60R031CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1154.67 грн
2+ 981.58 грн
3+ 893.2 грн
30+ 857.05 грн
IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R037P7XKSA1 IPW60R037P7.pdf
IPW60R037P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1172.71 грн
2+ 862.54 грн
4+ 785.63 грн
10+ 784.75 грн
IPW60R040C7XKSA1 IPW60R040C7-DTE.pdf
IPW60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 50A
кількість в упаковці: 1 шт
товар відсутній
IPW60R041C6FKSA1 IPW60R041C6-DTE.pdf
IPW60R041C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1255.33 грн
3+ 1144.57 грн
IPW60R041P6FKSA1 IPW60R041P6-DTE.pdf
IPW60R041P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R045CPFKSA1 IPW60R045CP-DTE.pdf
IPW60R045CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R070C6FKSA1 IPW60R070C6-DTE.pdf
IPW60R070C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R070CFD7 IPW60R070CFD7.pdf
IPW60R070CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R070P6XKSA1 IPW60R070P6-DTE.pdf
IPW60R070P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R075CPFKSA1 IPW60R075CP-DTE.pdf
IPW60R075CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R080P7 IPW60R080P7.pdf
IPW60R080P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPW60R099C6FKSA1 IPW60R099C6-DTE.pdf
IPW60R099C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R099C7XKSA1 IPW60R099C7-DTE.pdf
IPW60R099C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R099CPFKSA1 IPW60R099CP.pdf
IPW60R099CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1091.05 грн
2+ 729.77 грн
5+ 663.95 грн
IPW60R099P6XKSA1 IPW60R099P6-DTE.pdf
IPW60R099P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+436.8 грн
4+ 343.37 грн
9+ 313.02 грн
25+ 311.25 грн
30+ 299.79 грн
IPW60R125C6FKSA1 IPW60R125C6-DTE.pdf
IPW60R125C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R125CPFKSA1 IPW60R125CP-DTE.pdf
IPW60R125CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R125P6XKSA1 IPW60R125P6-DTE.pdf
IPW60R125P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R160C6FKSA1 IPW60R160C6-DTE.pdf
IPW60R160C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R160P6FKSA1 IPW60R160P6-DTE.pdf
IPW60R160P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R165CPFKSA1 IPW60R165CP-DTE.pdf
IPW60R165CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R170CFD7 IPW60R170CFD7.pdf
IPW60R170CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R180C7XKSA1 IPW60R180C7-DTE.pdf
IPW60R180C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R180P7XKSA1 IPW60R180P7.pdf
IPW60R180P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPW60R190C6FKSA1 IPW60R190C6-DTE.pdf
IPW60R190C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 61 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+387.42 грн
3+ 329.63 грн
4+ 275.98 грн
11+ 260.99 грн
IPW60R190E6FKSA1 IPW60R190E6-DTE.pdf
IPW60R190E6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R190P6FKSA1 IPW60R190P6-DTE.pdf
IPW60R190P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R199CPFKSA1 IPW60R199CP-DTE.pdf
IPW60R199CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R280C6FKSA1 IPW60R280C6-DTE.pdf
IPW60R280C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R280E6FKSA1 IPW60R280E6-DTE.pdf
IPW60R280E6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R280P6FKSA1 IPW60R280P6-DTE.pdf
IPW60R280P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 60 шт
товар відсутній
IPW60R299CPFKSA1 IPW60R299CP-DTE.pdf
IPW60R299CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW60R330P6FKSA1 IPW60R330P6.pdf
IPW60R330P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R019C7FKSA1 IPW65R019C7-DTE.pdf
IPW65R019C7FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 446W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R037C6FKSA1 IPW65R037C6-DTE.pdf
IPW65R037C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 83.2A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R041CFDFKSA1 IPW65R041CFD-DTE.pdf
IPW65R041CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R045C7FKSA1 IPW65R045C7-DTE.pdf
IPW65R045C7FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R065C7XKSA1 IPW65R065C7-DTE.pdf
IPW65R065C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R070C6FKSA1 IPW65R070C6-DTE.pdf
IPW65R070C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R080CFDA IPW65R080CFDA.pdf
IPW65R080CFDA
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R080CFDFKSA1 IPW65R080CFD-DTE.pdf
IPW65R080CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R125C7XKSA1 IPW65R125C7-DTE.pdf
IPW65R125C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R190CFDFKSA1 IPW65R190CFD-DTE.pdf
IPW65R190CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R280C6FKSA1 IPW65R280C6-DTE.pdf
IPW65R280C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R310CFDFKSA1 IPW65R310CFD-DTE.pdf
IPW65R310CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R420CFDFKSA1 IPW65R420CFD-DTE.pdf
IPW65R420CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+238.34 грн
3+ 206.02 грн
6+ 191.34 грн
10+ 185.17 грн
15+ 181.64 грн
30+ 174.58 грн
Мінімальне замовлення: 2
IPW65R660CFDFKSA1 IPW65R660CFD-DTE.pdf
IPW65R660CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 62.5W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW80R280P7XKSA1 Infineon-IPW80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e96482cb07dc
Виробник: INFINEON TECHNOLOGIES
IPW80R280P7 THT N channel transistors
на замовлення 112 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+422.56 грн
4+ 257.47 грн
11+ 242.48 грн
IPW80R360P7XKSA1 IPW80R360P7.pdf
IPW80R360P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
IPW90R800C3FKSA1 IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095
IPW90R800C3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPZ40N04S53R1ATMA1 IPZ40N04S53R1.pdf
IPZ40N04S53R1ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
IPZ40N04S5-5R4 IPZ40N04S5-5R4.pdf
IPZ40N04S5-5R4
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
IPZ40N04S5-8R4 IPZ40N04S5-8R4.pdf
IPZ40N04S5-8R4
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 34W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5000 шт
товар відсутній
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