Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136409) > Сторінка 2266 з 2274
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BTS724G | INFINEON TECHNOLOGIES |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3.3...7.3A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: SO20 On-state resistance: 22.5mΩ Supply voltage: 5.5...40V DC Technology: Classic PROFET |
на замовлення 535 шт: термін постачання 21-30 дні (днів) |
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IRLMS1902TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLMS1503TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLMS6702TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; 1.7W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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BTS3125EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.25Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
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| IPZA60R045P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 206A Power dissipation: 201W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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1EDC60H12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Supply voltage: 3.1...17V; 13...35V Mounting: SMD Case: PG-DSO-8 Integrated circuit features: galvanically isolated Kind of package: reel; tape Number of channels: 1 Output current: -6...6A Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 600/650/1200V |
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IRFSL4010PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262 Mounting: THT Kind of package: tube Technology: HEXFET® Kind of channel: enhanced Case: TO262 Drain-source voltage: 100V Drain current: 180A Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar |
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IRGSL4062DPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 48A; 250W; TO262 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 250W Case: TO262 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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AUIRGSL4062D1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262 Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 39A Power dissipation: 123W Case: TO262 Gate-emitter voltage: ±20V Pulsed collector current: 72A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 35ns Turn-off time: 176ns |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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SPD04P10PLGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3 Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO252-3 Drain-source voltage: -100V Drain current: -4.2A On-state resistance: 0.85Ω Type of transistor: P-MOSFET Power dissipation: 38W Polarisation: unipolar |
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BSC010N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: PG-TDSON-8 FL On-state resistance: 1mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced |
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IRS2104SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 185ns |
на замовлення 162 шт: термін постачання 21-30 дні (днів) |
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| STT2200N18P55XPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.8kV Load current: 2.18kA Case: BG-PS55-1 Max. forward voltage: 1.38V Max. forward impulse current: 17.5kA Gate current: 200mA Electrical mounting: screw Mechanical mounting: screw |
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DD171N12K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 171A; BG-PB34-1; screw Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 171A Type of module: diode Semiconductor structure: double series Case: BG-PB34-1 Max. forward impulse current: 6.6kA Max. forward voltage: 1.26V |
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IGB01N120H2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK; single transistor Mounting: SMD Gate charge: 8.6nC Pulsed collector current: 3.5A Type of transistor: IGBT Turn-on time: 20.9ns Kind of package: reel; tape Semiconductor structure: single transistor Case: D2PAK Turn-off time: 493ns Gate-emitter voltage: ±20V Collector current: 1.3A Collector-emitter voltage: 1.2kV Power dissipation: 28W |
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TT251N12KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 251A Case: BG-PB50-1 Max. forward voltage: 1.4V Max. forward impulse current: 9.1kA Gate current: 300mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IPI041N12N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 120A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: THT Kind of channel: enhanced |
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IPD80R360P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 30nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SGB02N120 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 2.8A Power dissipation: 62W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 9.6A Mounting: SMD Kind of package: reel Turn-on time: 40ns Turn-off time: 375ns |
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TD330N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V Max. off-state voltage: 1.6kV Max. load current: 330A Max. forward voltage: 1.28V Load current: 330A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 12.5kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50AT-1 |
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| TLD22522EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-TSDSO-14; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-side; LED controller Technology: Litix™ Case: PG-TSDSO-14 Output current: 60...120mA Number of channels: 2 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V Protection: overheating OTP |
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| IAUZ20N08S5L300ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Features of semiconductor devices: logic level Kind of package: reel; tape Technology: OptiMOS™ 5 On-state resistance: 30mΩ Pulsed drain current: 80A Power dissipation: 30W Polarisation: unipolar Drain current: 14A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
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TT570N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 570A Case: BG-PB60AT-1 Max. forward voltage: 1.27V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IRF7726TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.79W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BSC036NE7NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 156W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 75V Drain current: 100A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET |
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BCR583E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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BSC0902NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 91A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced |
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BSC0909NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 34V Drain current: 44A Power dissipation: 27W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 1189 шт: термін постачання 21-30 дні (днів) |
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BSC097N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 46A Power dissipation: 36W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Kind of channel: enhanced |
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BSC007N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 138W Case: PG-TDSON-8 FL On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced |
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| BSC009NE2LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhanced |
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BSC014N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced |
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BSC016N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced |
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BSC016N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced |
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BSC017N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced |
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XC8221FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH Type of integrated circuit: microcontroller 8051 Interface: DALI; I2C; SPI; UART Case: PG-TSSOP-16 Memory: 4kB FLASH Supply voltage: 2.5...5.5V DC Integrated circuit features: RTC; watchdog Mounting: SMD Operating temperature: -40...85°C Clock frequency: 24MHz Number of 16bit timers: 3 Number of 10bit A/D converters: 4 Number of PWM channels: 1 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC822T0FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 2kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 2kB FLASH Operating temperature: -40...85°C Integrated circuit features: RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC822T1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
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| SPD03N50C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 9.6A Power dissipation: 38W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced |
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BSB056N10NN3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Power dissipation: 78W Case: CanPAK™ MN; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Kind of channel: enhanced |
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IRF7821TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.6A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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XC8662FRIBEFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 26.67MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-TSSOP-38 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 4 Memory: 750B SRAM; 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC8662FRIBEKXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 26.67MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-TSSOP-38 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 4 Memory: 750B SRAM; 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC8664FRIBEFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 26.67MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-TSSOP-38 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 4 Memory: 750B SRAM; 16kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC8664FRIBEKXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 26.67MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-TSSOP-38 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 4 Memory: 750B SRAM; 16kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC836M1FRIABFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-28 Mounting: SMD Number of 16bit timers: 2 Number of PWM channels: 4 Memory: 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC836M2FRIABFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-28 Mounting: SMD Number of 16bit timers: 2 Number of PWM channels: 4 Memory: 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC836T2FRIABFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-28 Mounting: SMD Number of 16bit timers: 2 Number of PWM channels: 4 Memory: 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC866L4FRIBEKXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 26.67MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-TSSOP-38 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 4 Memory: 750B SRAM; 16kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC836MT2FRIABFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-28 Mounting: SMD Number of 16bit timers: 2 Number of PWM channels: 4 Memory: 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
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BSS806NEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.5W On-state resistance: 82mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 2.3A |
на замовлення 2830 шт: термін постачання 21-30 дні (днів) |
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IRFH8330TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; 3.3W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 17A Power dissipation: 3.3W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPB90R340C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Kind of channel: enhanced |
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IPP90R340C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRFSL7434PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 226A; 294W; TO262 Power dissipation: 294W Case: TO262 Mounting: THT Kind of package: tube Technology: HEXFET® Gate charge: 216nC Polarisation: unipolar Drain current: 226A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 1.6mΩ |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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BTS282ZE3180AATMA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO263-7-1 On-state resistance: 6.5mΩ Kind of package: reel; tape Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 49V Power dissipation: 300W Integrated circuit features: internal temperature sensor |
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| BTS282ZE3230AKSA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 6.5mΩ Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 49V Power dissipation: 300W Integrated circuit features: internal temperature sensor |
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BTS3050EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.1Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
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BTS3050TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.1Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
товар відсутній |
| BTS724G |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
на замовлення 535 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.62 грн |
| 4+ | 257.71 грн |
| 10+ | 243.19 грн |
| IRLMS1902TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLMS1503TRPBF | |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLMS6702TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| BTS3125EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товар відсутній
| IPZA60R045P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 206A
Power dissipation: 201W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 206A
Power dissipation: 201W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| 1EDC60H12AHXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -6...6A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -6...6A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
товар відсутній
| IRFSL4010PBF | |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Mounting: THT
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhanced
Case: TO262
Drain-source voltage: 100V
Drain current: 180A
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Mounting: THT
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhanced
Case: TO262
Drain-source voltage: 100V
Drain current: 180A
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
товар відсутній
| IRGSL4062DPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| AUIRGSL4062D1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 123W
Case: TO262
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 176ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 123W
Case: TO262
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 176ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 322.1 грн |
| 3+ | 279.49 грн |
| 4+ | 264.25 грн |
| 9+ | 249.73 грн |
| SPD04P10PLGBTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: -100V
Drain current: -4.2A
On-state resistance: 0.85Ω
Type of transistor: P-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: -100V
Drain current: -4.2A
On-state resistance: 0.85Ω
Type of transistor: P-MOSFET
Power dissipation: 38W
Polarisation: unipolar
товар відсутній
| BSC010N04LS6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRS2104SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
на замовлення 162 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.29 грн |
| 5+ | 87.84 грн |
| 13+ | 69.69 грн |
| 34+ | 66.06 грн |
| STT2200N18P55XPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DD171N12K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 171A; BG-PB34-1; screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 171A
Type of module: diode
Semiconductor structure: double series
Case: BG-PB34-1
Max. forward impulse current: 6.6kA
Max. forward voltage: 1.26V
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 171A; BG-PB34-1; screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 171A
Type of module: diode
Semiconductor structure: double series
Case: BG-PB34-1
Max. forward impulse current: 6.6kA
Max. forward voltage: 1.26V
товар відсутній
| IGB01N120H2ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK; single transistor
Mounting: SMD
Gate charge: 8.6nC
Pulsed collector current: 3.5A
Type of transistor: IGBT
Turn-on time: 20.9ns
Kind of package: reel; tape
Semiconductor structure: single transistor
Case: D2PAK
Turn-off time: 493ns
Gate-emitter voltage: ±20V
Collector current: 1.3A
Collector-emitter voltage: 1.2kV
Power dissipation: 28W
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK; single transistor
Mounting: SMD
Gate charge: 8.6nC
Pulsed collector current: 3.5A
Type of transistor: IGBT
Turn-on time: 20.9ns
Kind of package: reel; tape
Semiconductor structure: single transistor
Case: D2PAK
Turn-off time: 493ns
Gate-emitter voltage: ±20V
Collector current: 1.3A
Collector-emitter voltage: 1.2kV
Power dissipation: 28W
товар відсутній
| TT251N12KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 251A
Case: BG-PB50-1
Max. forward voltage: 1.4V
Max. forward impulse current: 9.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 251A
Case: BG-PB50-1
Max. forward voltage: 1.4V
Max. forward impulse current: 9.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IPI041N12N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPD80R360P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SGB02N120 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
товар відсутній
| TD330N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Max. off-state voltage: 1.6kV
Max. load current: 330A
Max. forward voltage: 1.28V
Load current: 330A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 12.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50AT-1
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Max. off-state voltage: 1.6kV
Max. load current: 330A
Max. forward voltage: 1.28V
Load current: 330A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 12.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50AT-1
товар відсутній
| TLD22522EPXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-TSDSO-14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-TSDSO-14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
товар відсутній
| IAUZ20N08S5L300ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Features of semiconductor devices: logic level
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 30mΩ
Pulsed drain current: 80A
Power dissipation: 30W
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Features of semiconductor devices: logic level
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 30mΩ
Pulsed drain current: 80A
Power dissipation: 30W
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товар відсутній
| TT570N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IRF7726TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BSC036NE7NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 156W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 156W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
товар відсутній
| BCR583E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| BSC0902NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC0909NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 1189 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.34 грн |
| 25+ | 17.5 грн |
| 54+ | 15.97 грн |
| 100+ | 15.75 грн |
| 147+ | 15.1 грн |
| 250+ | 14.66 грн |
| 1000+ | 14.52 грн |
| BSC097N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC007N04LS6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 138W
Case: PG-TDSON-8 FL
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 138W
Case: PG-TDSON-8 FL
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BSC009NE2LS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC014N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC016N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC016N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC017N04NSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| XC8221FRIAAFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Interface: DALI; I2C; SPI; UART
Case: PG-TSSOP-16
Memory: 4kB FLASH
Supply voltage: 2.5...5.5V DC
Integrated circuit features: RTC; watchdog
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 24MHz
Number of 16bit timers: 3
Number of 10bit A/D converters: 4
Number of PWM channels: 1
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Interface: DALI; I2C; SPI; UART
Case: PG-TSSOP-16
Memory: 4kB FLASH
Supply voltage: 2.5...5.5V DC
Integrated circuit features: RTC; watchdog
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 24MHz
Number of 16bit timers: 3
Number of 10bit A/D converters: 4
Number of PWM channels: 1
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC822T0FRIAAFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 2kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 2kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 2kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 2kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC822T1FRIAAFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| SPD03N50C3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSB056N10NN3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 78W
Case: CanPAK™ MN; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 78W
Case: CanPAK™ MN; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF7821TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| XC8662FRIBEFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC8662FRIBEKXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC8664FRIBEFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 16kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 16kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC8664FRIBEKXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 16kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 16kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC836M1FRIABFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC836M2FRIABFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC836T2FRIABFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC866L4FRIBEKXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 16kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.67MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-TSSOP-38
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 4
Memory: 750B SRAM; 16kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC836MT2FRIABFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| BSS806NEH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.3A
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 7.11 грн |
| 100+ | 5.74 грн |
| 211+ | 4.07 грн |
| 578+ | 3.77 грн |
| IRFH8330TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; 3.3W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Power dissipation: 3.3W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; 3.3W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Power dissipation: 3.3W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB90R340C3ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPP90R340C3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFSL7434PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 226A; 294W; TO262
Power dissipation: 294W
Case: TO262
Mounting: THT
Kind of package: tube
Technology: HEXFET®
Gate charge: 216nC
Polarisation: unipolar
Drain current: 226A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 226A; 294W; TO262
Power dissipation: 294W
Case: TO262
Mounting: THT
Kind of package: tube
Technology: HEXFET®
Gate charge: 216nC
Polarisation: unipolar
Drain current: 226A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.92 грн |
| 3+ | 164.79 грн |
| 6+ | 148.82 грн |
| 10+ | 148.09 грн |
| BTS282ZE3180AATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
товар відсутній
| BTS282ZE3230AKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
товар відсутній
| BTS3050EJ |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товар відсутній
| BTS3050TF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товар відсутній