Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136410) > Сторінка 2267 з 2274
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BTS3050TF | INFINEON TECHNOLOGIES |
 Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.1Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
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BTS3060TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 135mΩ Technology: HITFET® Operating temperature: -40...150°C Output voltage: 42V Turn-on time: 76µs Turn-off time: 130µs |
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BTS3080TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.16Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
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| BTS3104SDRATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; DPAK; reel Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK On-state resistance: 323mΩ Kind of package: reel Technology: HITFET® Operating temperature: -40...150°C Output voltage: 60V |
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BTS3160D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-5-13 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-5-13 On-state resistance: 35mΩ Technology: HITFET® Output voltage: 42V |
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BSR315PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.49A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhanced |
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TLD1314ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3 Type of integrated circuit: driver Kind of integrated circuit: high-side; LED controller Technology: Litix™ Case: PG-SSOP-14-EP Output current: 0.12A Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V Protection: overheating OTP |
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IRF7855TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6726MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6785MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 57W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6795MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 160A Power dissipation: 75W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6797MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 210A; 89W; DirectFET Kind of package: reel Drain-source voltage: 25V Drain current: 210A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET |
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IRF6811STRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 74A Power dissipation: 32W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6894MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET Kind of package: reel Power dissipation: 54W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET Drain-source voltage: 25V Drain current: 170A Type of transistor: N-MOSFET |
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IRF6898MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 213A Power dissipation: 78W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7739L2TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7759L2TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 26A Power dissipation: 125W Case: DirectFET Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 200nC Kind of channel: enhanced |
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IRF7769L2TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 124A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7779L2TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 67A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| IM818MCCXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Maxi; TRENCHSTOP™ Case: DIP36 Output current: 5A Mounting: THT Kind of package: tube Voltage class: 1.2kV |
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BCR523E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Type of transistor: NPN Mounting: SMD Case: SOT23 Power dissipation: 0.33W Frequency: 100MHz Polarisation: bipolar Base-emitter resistor: 10kΩ Collector-emitter voltage: 50V Collector current: 0.5A Kind of transistor: BRT Base resistor: 1kΩ |
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| BCR35PNH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT363 Polarisation: bipolar Collector current: 0.1A Collector-emitter voltage: 50V Frequency: 150MHz Kind of transistor: BRT; complementary pair Base resistor: 10kΩ Type of transistor: NPN / PNP Base-emitter resistor: 47kΩ Power dissipation: 0.25W |
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| BCR48PNH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA Mounting: SMD Case: SOT363 Polarisation: bipolar Collector current: 70mA Collector-emitter voltage: 50V Frequency: 100MHz Kind of transistor: BRT; complementary pair Base resistor: 47/2.2kΩ Type of transistor: NPN / PNP Base-emitter resistor: 47/47kΩ Power dissipation: 0.25W |
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| BCR523UE6433HTMA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.5A; 0.33W; SC74; R1: 1kΩ Type of transistor: NPN x2 Mounting: SMD Case: SC74 Power dissipation: 0.33W Frequency: 100MHz Polarisation: bipolar Base-emitter resistor: 10kΩ Collector-emitter voltage: 50V Collector current: 0.5A Kind of transistor: BRT Base resistor: 1kΩ |
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IPT007N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 216nC Kind of package: tape Kind of channel: enhanced |
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ITS711L1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.7A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: DSO20 Supply voltage: 5...34V DC Technology: Industrial PROFET Output voltage: 2...4V |
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BSS670S2LH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 0.54A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 7874 шт: термін постачання 21-30 дні (днів) |
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IDH10G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 165W; PG-TO220-2 Technology: CoolSiC™ 5G; SiC Power dissipation: 165W Case: PG-TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 10A Leakage current: 4µA Type of diode: Schottky rectifying Max. forward impulse current: 99A |
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IDH10G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 89W; PG-TO220-2 Technology: CoolSiC™ 5G; SiC Power dissipation: 89W Case: PG-TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Heatsink thickness: 1.17...137mm Max. forward voltage: 1.8V Load current: 10A Leakage current: 2µA Type of diode: Schottky rectifying Max. forward impulse current: 71A |
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IDH10G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 72W; PG-TO220-2 Technology: CoolSiC™ 5G; SiC Power dissipation: 72W Case: PG-TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Heatsink thickness: 1.17...1.37mm Max. forward voltage: 1.25V Load current: 10A Leakage current: 77µA Type of diode: Schottky rectifying Max. forward impulse current: 44A |
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| IDK10G120C5XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; PG-TO263-2; 165W Semiconductor structure: single diode Max. off-state voltage: 1.2kV Max. forward impulse current: 84A Case: PG-TO263-2 Mounting: SMD Power dissipation: 165W Technology: CoolSiC™ 5G; SiC Kind of package: reel; tape Load current: 10A Max. forward voltage: 2V Leakage current: 22µA Type of diode: Schottky rectifying |
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| IDK10G65C5 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 89W Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward impulse current: 71A Case: PG-TO263-2 Mounting: SMD Power dissipation: 89W Technology: CoolSiC™ 5G; SiC Kind of package: reel; tape Load current: 10A Max. forward voltage: 1.8V Leakage current: 2µA Type of diode: Schottky rectifying |
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IDM10G120C5XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; PG-TO252-2; 223W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: PG-TO252-2 Kind of package: reel; tape Leakage current: 4µA Max. forward impulse current: 84A Power dissipation: 223W |
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IDW100E60FKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-3 Kind of package: tube |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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| IDDD10G65C6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-HDSOP-10-1 Technology: CoolSiC™ 5G; SiC Power dissipation: 105W Case: PG-HDSOP-10-1 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 1.25V Load current: 10A Leakage current: 1µA Type of diode: Schottky rectifying Max. forward impulse current: 44A |
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IDWD10G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 148W; TO247-2 Power dissipation: 148W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Case: TO247-2 Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 140A |
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| AIDK10S65C5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 53W Technology: CoolSiC™ 5G; SiC Power dissipation: 53W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 2.1V Load current: 10A Leakage current: 12µA Type of diode: Schottky rectifying Max. forward impulse current: 33A |
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| AIDW10S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; TO247-3 Technology: CoolSiC™ 5G; SiC Power dissipation: 65W Case: TO247-3 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 650V Application: automotive industry Load current: 10A Type of diode: Schottky rectifying Max. forward impulse current: 58A |
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IRFIZ24NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 13A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Gate charge: 13.3nC Kind of package: tube Kind of channel: enhanced |
на замовлення 171 шт: термін постачання 21-30 дні (днів) |
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| TD140N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 140A; BG-PB34SB-1; Ufmax: 1.41V Case: BG-PB34SB-1 Max. forward impulse current: 4.7kA Gate current: 150mA Max. forward voltage: 1.41V Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 140A Max. load current: 220A Type of module: diode-thyristor Semiconductor structure: double series |
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TD140N22KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 140A; BG-PB34-1; Ufmax: 1.41V Case: BG-PB34-1 Max. forward impulse current: 4.7kA Gate current: 150mA Max. forward voltage: 1.41V Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 140A Max. load current: 250A Type of module: diode-thyristor Semiconductor structure: double series |
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BSP321PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.79A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.79A Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhanced |
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BSV236SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Power dissipation: 0.56W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 0.175Ω Mounting: SMD Kind of channel: enhanced |
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IPL60R210P6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19.2A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Kind of channel: enhanced |
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IPS70R1K4P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; IPAK SL Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.5A Power dissipation: 22.7W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 1.4Ω Mounting: THT Gate charge: 4.7nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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BCR22PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Base-emitter resistor: 22kΩ Frequency: 130MHz |
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BSO033N03MSGXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8 Mounting: SMD Drain-source voltage: 30V Polarisation: unipolar Power dissipation: 1.56W Drain current: 22A Case: PG-DSO-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 3.8mΩ |
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BSO080P03SHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -12.6A Power dissipation: 1.79W Case: PG-DSO-8 Gate-source voltage: ±25V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced |
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BSO301SPHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -12.6A Power dissipation: 1.79W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced |
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BSO303SPHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.2A Power dissipation: 1.56W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Kind of channel: enhanced |
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TT330N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw Max. off-state voltage: 1.6kV Max. forward voltage: 1.28V Load current: 330A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 10kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB50AT-1 |
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IRFH8307TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 42A Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
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| IPD80P03P4L07ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -65A Pulsed drain current: -320A Power dissipation: 88W Case: PG-TO252-3-11 Gate-source voltage: -5...16V On-state resistance: 6.8mΩ Mounting: SMD Kind of channel: enhanced |
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BSZ180P03NS3EGATMA | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 40W Technology: OptiMOS™ P3 Gate-source voltage: ±25V Kind of channel: enhanced Drain-source voltage: -30V Drain current: -39.6A On-state resistance: 18mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
товар відсутній |
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BSZ180P03NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 40W Technology: OptiMOS™ P3 Gate-source voltage: ±25V Kind of channel: enhanced Drain-source voltage: -30V Drain current: -39.6A On-state resistance: 40mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
товар відсутній |
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IDP08E65D1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 8A; tube; TO220-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220-2 Kind of package: tube |
товар відсутній |
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IDV08E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 8A; tube; TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220FP-2 Kind of package: tube |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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IDV15E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220FP-2 Kind of package: tube |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IDW15E65D2FKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-3 Kind of package: tube |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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IDW40E65D1FKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 40A; tube; TO247-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-3 Kind of package: tube |
товар відсутній |
| BTS3050TF |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товар відсутній
| BTS3060TF |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 135mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 42V
Turn-on time: 76µs
Turn-off time: 130µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 135mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 42V
Turn-on time: 76µs
Turn-off time: 130µs
товар відсутній
| BTS3080TF |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товар відсутній
| BTS3104SDRATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; DPAK; reel
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 323mΩ
Kind of package: reel
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 60V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; DPAK; reel
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 323mΩ
Kind of package: reel
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 60V
товар відсутній
| BTS3160D |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-5-13
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-13
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-5-13
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-13
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
товар відсутній
| BSR315PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TLD1314ELXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
товар відсутній
| IRF7855TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6726MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6785MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 57W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 57W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6795MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Power dissipation: 75W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Power dissipation: 75W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6797MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; 89W; DirectFET
Kind of package: reel
Drain-source voltage: 25V
Drain current: 210A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; 89W; DirectFET
Kind of package: reel
Drain-source voltage: 25V
Drain current: 210A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
товар відсутній
| IRF6811STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Power dissipation: 32W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Power dissipation: 32W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6894MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Kind of package: reel
Power dissipation: 54W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Drain-source voltage: 25V
Drain current: 170A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Kind of package: reel
Power dissipation: 54W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Drain-source voltage: 25V
Drain current: 170A
Type of transistor: N-MOSFET
товар відсутній
| IRF6898MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7739L2TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7759L2TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhanced
товар відсутній
| IRF7769L2TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7779L2TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IM818MCCXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Maxi; TRENCHSTOP™
Case: DIP36
Output current: 5A
Mounting: THT
Kind of package: tube
Voltage class: 1.2kV
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; DIP36; 5A; 1.2kV
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Maxi; TRENCHSTOP™
Case: DIP36
Output current: 5A
Mounting: THT
Kind of package: tube
Voltage class: 1.2kV
товар відсутній
| BCR523E6433HTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Mounting: SMD
Case: SOT23
Power dissipation: 0.33W
Frequency: 100MHz
Polarisation: bipolar
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.5A
Kind of transistor: BRT
Base resistor: 1kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Mounting: SMD
Case: SOT23
Power dissipation: 0.33W
Frequency: 100MHz
Polarisation: bipolar
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.5A
Kind of transistor: BRT
Base resistor: 1kΩ
товар відсутній
| BCR35PNH6433XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 150MHz
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 150MHz
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
товар відсутній
| BCR48PNH6433XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 70mA
Collector-emitter voltage: 50V
Frequency: 100MHz
Kind of transistor: BRT; complementary pair
Base resistor: 47/2.2kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47/47kΩ
Power dissipation: 0.25W
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 70mA
Collector-emitter voltage: 50V
Frequency: 100MHz
Kind of transistor: BRT; complementary pair
Base resistor: 47/2.2kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47/47kΩ
Power dissipation: 0.25W
товар відсутній
| BCR523UE6433HTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.5A; 0.33W; SC74; R1: 1kΩ
Type of transistor: NPN x2
Mounting: SMD
Case: SC74
Power dissipation: 0.33W
Frequency: 100MHz
Polarisation: bipolar
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.5A
Kind of transistor: BRT
Base resistor: 1kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.5A; 0.33W; SC74; R1: 1kΩ
Type of transistor: NPN x2
Mounting: SMD
Case: SC74
Power dissipation: 0.33W
Frequency: 100MHz
Polarisation: bipolar
Base-emitter resistor: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.5A
Kind of transistor: BRT
Base resistor: 1kΩ
товар відсутній
| IPT007N06NATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| ITS711L1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Output voltage: 2...4V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Output voltage: 2...4V
товар відсутній
| BSS670S2LH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 7874 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.02 грн |
| 18+ | 20.47 грн |
| 25+ | 14.55 грн |
| 50+ | 11.83 грн |
| 100+ | 9.5 грн |
| 245+ | 3.48 грн |
| 672+ | 3.29 грн |
| IDH10G120C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 165W; PG-TO220-2
Technology: CoolSiC™ 5G; SiC
Power dissipation: 165W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 10A
Leakage current: 4µA
Type of diode: Schottky rectifying
Max. forward impulse current: 99A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 165W; PG-TO220-2
Technology: CoolSiC™ 5G; SiC
Power dissipation: 165W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 10A
Leakage current: 4µA
Type of diode: Schottky rectifying
Max. forward impulse current: 99A
товар відсутній
| IDH10G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 89W; PG-TO220-2
Technology: CoolSiC™ 5G; SiC
Power dissipation: 89W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 89W; PG-TO220-2
Technology: CoolSiC™ 5G; SiC
Power dissipation: 89W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
товар відсутній
| IDH10G65C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 72W; PG-TO220-2
Technology: CoolSiC™ 5G; SiC
Power dissipation: 72W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Heatsink thickness: 1.17...1.37mm
Max. forward voltage: 1.25V
Load current: 10A
Leakage current: 77µA
Type of diode: Schottky rectifying
Max. forward impulse current: 44A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 72W; PG-TO220-2
Technology: CoolSiC™ 5G; SiC
Power dissipation: 72W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Heatsink thickness: 1.17...1.37mm
Max. forward voltage: 1.25V
Load current: 10A
Leakage current: 77µA
Type of diode: Schottky rectifying
Max. forward impulse current: 44A
товар відсутній
| IDK10G120C5XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; PG-TO263-2; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward impulse current: 84A
Case: PG-TO263-2
Mounting: SMD
Power dissipation: 165W
Technology: CoolSiC™ 5G; SiC
Kind of package: reel; tape
Load current: 10A
Max. forward voltage: 2V
Leakage current: 22µA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; PG-TO263-2; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward impulse current: 84A
Case: PG-TO263-2
Mounting: SMD
Power dissipation: 165W
Technology: CoolSiC™ 5G; SiC
Kind of package: reel; tape
Load current: 10A
Max. forward voltage: 2V
Leakage current: 22µA
Type of diode: Schottky rectifying
товар відсутній
| IDK10G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward impulse current: 71A
Case: PG-TO263-2
Mounting: SMD
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Kind of package: reel; tape
Load current: 10A
Max. forward voltage: 1.8V
Leakage current: 2µA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward impulse current: 71A
Case: PG-TO263-2
Mounting: SMD
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Kind of package: reel; tape
Load current: 10A
Max. forward voltage: 1.8V
Leakage current: 2µA
Type of diode: Schottky rectifying
товар відсутній
| IDM10G120C5XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; PG-TO252-2; 223W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: PG-TO252-2
Kind of package: reel; tape
Leakage current: 4µA
Max. forward impulse current: 84A
Power dissipation: 223W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; PG-TO252-2; 223W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: PG-TO252-2
Kind of package: reel; tape
Leakage current: 4µA
Max. forward impulse current: 84A
Power dissipation: 223W
товар відсутній
| IDW100E60FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-3
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-3
Kind of package: tube
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.92 грн |
| 3+ | 200.36 грн |
| 6+ | 164.79 грн |
| 14+ | 155.35 грн |
| IDDD10G65C6XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-HDSOP-10-1
Technology: CoolSiC™ 5G; SiC
Power dissipation: 105W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 10A
Leakage current: 1µA
Type of diode: Schottky rectifying
Max. forward impulse current: 44A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-HDSOP-10-1
Technology: CoolSiC™ 5G; SiC
Power dissipation: 105W
Case: PG-HDSOP-10-1
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 10A
Leakage current: 1µA
Type of diode: Schottky rectifying
Max. forward impulse current: 44A
товар відсутній
| IDWD10G120C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 148W; TO247-2
Power dissipation: 148W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 148W; TO247-2
Power dissipation: 148W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 140A
товар відсутній
| AIDK10S65C5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 53W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 53W
Case: PG-TO263-2
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.1V
Load current: 10A
Leakage current: 12µA
Type of diode: Schottky rectifying
Max. forward impulse current: 33A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 53W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 53W
Case: PG-TO263-2
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.1V
Load current: 10A
Leakage current: 12µA
Type of diode: Schottky rectifying
Max. forward impulse current: 33A
товар відсутній
| AIDW10S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: TO247-3
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 650V
Application: automotive industry
Load current: 10A
Type of diode: Schottky rectifying
Max. forward impulse current: 58A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: TO247-3
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 650V
Application: automotive industry
Load current: 10A
Type of diode: Schottky rectifying
Max. forward impulse current: 58A
товар відсутній
| IRFIZ24NPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 171 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 83.65 грн |
| 6+ | 60.98 грн |
| 10+ | 50.09 грн |
| 20+ | 44.28 грн |
| 50+ | 43.56 грн |
| 53+ | 41.38 грн |
| TD140N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; BG-PB34SB-1; Ufmax: 1.41V
Case: BG-PB34SB-1
Max. forward impulse current: 4.7kA
Gate current: 150mA
Max. forward voltage: 1.41V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 140A
Max. load current: 220A
Type of module: diode-thyristor
Semiconductor structure: double series
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; BG-PB34SB-1; Ufmax: 1.41V
Case: BG-PB34SB-1
Max. forward impulse current: 4.7kA
Gate current: 150mA
Max. forward voltage: 1.41V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 140A
Max. load current: 220A
Type of module: diode-thyristor
Semiconductor structure: double series
товар відсутній
| TD140N22KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 140A; BG-PB34-1; Ufmax: 1.41V
Case: BG-PB34-1
Max. forward impulse current: 4.7kA
Gate current: 150mA
Max. forward voltage: 1.41V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Max. load current: 250A
Type of module: diode-thyristor
Semiconductor structure: double series
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 140A; BG-PB34-1; Ufmax: 1.41V
Case: BG-PB34-1
Max. forward impulse current: 4.7kA
Gate current: 150mA
Max. forward voltage: 1.41V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Max. load current: 250A
Type of module: diode-thyristor
Semiconductor structure: double series
товар відсутній
| BSP321PH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.79A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.79A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.79A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.79A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSV236SPH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.56W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.56W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPL60R210P6AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPS70R1K4P7SAKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 4.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 4.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| BCR22PNH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Base-emitter resistor: 22kΩ
Frequency: 130MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Base-emitter resistor: 22kΩ
Frequency: 130MHz
товар відсутній
| BSO033N03MSGXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Drain-source voltage: 30V
Polarisation: unipolar
Power dissipation: 1.56W
Drain current: 22A
Case: PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Drain-source voltage: 30V
Polarisation: unipolar
Power dissipation: 1.56W
Drain current: 22A
Case: PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
товар відсутній
| BSO080P03SHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSO301SPHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSO303SPHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TT330N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.28V
Load current: 330A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 10kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50AT-1
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.28V
Load current: 330A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 10kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50AT-1
товар відсутній
| IRFH8307TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
товар відсутній
| IPD80P03P4L07ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -65A
Pulsed drain current: -320A
Power dissipation: 88W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -65A; 88W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -65A
Pulsed drain current: -320A
Power dissipation: 88W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSZ180P03NS3EGATMA |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 40W
Technology: OptiMOS™ P3
Gate-source voltage: ±25V
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 40W
Technology: OptiMOS™ P3
Gate-source voltage: ±25V
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
товар відсутній
| BSZ180P03NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 40W
Technology: OptiMOS™ P3
Gate-source voltage: ±25V
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 40W
Technology: OptiMOS™ P3
Gate-source voltage: ±25V
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
товар відсутній
| IDP08E65D1XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220-2
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220-2
Kind of package: tube
товар відсутній
| IDV08E65D2XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220FP-2
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220FP-2
Kind of package: tube
на замовлення 195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 53.36 грн |
| 20+ | 43.92 грн |
| 53+ | 41.52 грн |
| IDV15E65D2XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220FP-2
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220FP-2
Kind of package: tube
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.27 грн |
| 10+ | 48.64 грн |
| 19+ | 45.73 грн |
| IDW15E65D2FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-3
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-3
Kind of package: tube
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.6 грн |
| 12+ | 71.14 грн |
| 30+ | 64.61 грн |
| IDW40E65D1FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-3
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-3
Kind of package: tube
товар відсутній