Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136409) > Сторінка 2271 з 2274
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TD122N22KOF | INFINEON TECHNOLOGIES |
 Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V Max. off-state voltage: 2.2kV Load current: 122A Max. load current: 220A Semiconductor structure: double series Case: BG-PB34-1 Max. forward impulse current: 3.3kA Max. forward voltage: 1.95V Gate current: 200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor |
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| BCR112E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
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IRFR4104PBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 59nC Kind of channel: enhanced |
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| IPN60R3K4CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 1.6A; Idm: 3.9A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.6A Pulsed drain current: 3.9A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: SMD Kind of channel: enhanced |
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IPP60R060P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IGP40N65F5 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 74A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 |
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| IAUC24N10S5L300ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Pulsed drain current: 96A Power dissipation: 38W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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IDW24G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12Ax2; 152W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A x2 Power dissipation: 152W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 56A Max. forward voltage: 1.8V Leakage current: 2.4µA |
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IDW32G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16Ax2; 188W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A x2 Power dissipation: 188W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 74A Max. forward voltage: 1.8V Leakage current: 3.2µA |
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IDW40G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 112W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Power dissipation: 112W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 87A Max. forward voltage: 1.8V Leakage current: 4.1µA |
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1EDI05I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1 Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -0.5...0.5A Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
на замовлення 2164 шт: термін постачання 21-30 дні (днів) |
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1EDI10I12MFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Output current: -1...1A Type of integrated circuit: driver Number of channels: 1 |
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1EDI40I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -4...4A Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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1EDI60I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -6...6A Number of channels: 1 Supply voltage: 3.1...17V; 13...35V Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 1.2kV |
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| IAUA250N04S6N005AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA250N04S6N006AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 57A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 169nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA250N04S6N007AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1350A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA250N04S6N007EAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1.3kA Power dissipation: 192W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.83Ω Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUA250N04S6N008AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 51A Pulsed drain current: 1100A Power dissipation: 172W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 960µΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhanced |
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IPW80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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BSF035NE2LQXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W Technology: OptiMOS™ Case: CanPAK™ SQ; MG-WDSON-2 Mounting: SMD On-state resistance: 3.5mΩ Power dissipation: 28W Drain-source voltage: 25V Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Type of transistor: N-MOSFET Drain current: 69A |
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| DZ950N44K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 4.4kV; If: 950A; BG-PB70-1; Ifsm: 35kA Max. off-state voltage: 4.4kV Max. forward voltage: 0.85V Load current: 950A Semiconductor structure: single diode Max. forward impulse current: 35kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: BG-PB70-1 |
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IPL65R130C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 102W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhanced |
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BTS3142DATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 On-state resistance: 28mΩ Technology: HITFET® Output voltage: 42V Power dissipation: 59W |
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BSZ040N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 3654 шт: термін постачання 21-30 дні (днів) |
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| BCR112 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
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BAS7004WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW Mounting: SMD Case: SOT323 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Max. forward impulse current: 0.1A Power dissipation: 0.25W Type of diode: Schottky switching |
на замовлення 3025 шт: термін постачання 21-30 дні (днів) |
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TLS115B0LDXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Input voltage: 4...45V |
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TLS115D0LDXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Input voltage: 4...45V |
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BCR430U | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: PG-SOT23-6 Output current: 20...100mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 6...42V |
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| IPL60R650P6SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Power dissipation: 56.8W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Kind of channel: enhanced |
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IRFR4620PBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 144W Case: DPAK Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced |
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| IPDD60R190G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 76W Type of transistor: N-MOSFET On-state resistance: 0.19Ω Drain current: 13A Gate charge: 18nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 36A Mounting: SMD |
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TT430N22KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 430A; BG-PB60AT-1; screw Mechanical mounting: screw Load current: 430A Max. forward voltage: 1.78V Max. off-state voltage: 2.2kV Electrical mounting: FASTON connectors; screw Case: BG-PB60AT-1 Type of module: thyristor Max. forward impulse current: 14kA Gate current: 250mA Semiconductor structure: double series |
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| IDK08G120C5XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; PG-TO263-2; 126W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 2.25V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 14µA Max. forward impulse current: 60A Power dissipation: 126W |
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IPI65R420CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3 Technology: CoolMOS™ Case: PG-TO262-3 Mounting: THT On-state resistance: 0.42Ω Power dissipation: 83.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 8.7A Type of transistor: N-MOSFET |
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IPP65R420CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.7A Power dissipation: 83.3W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| AIDW12S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3 Case: TO247-3 Mounting: THT Power dissipation: 76W Application: automotive industry Type of diode: Schottky rectifying Max. forward impulse current: 71A Semiconductor structure: single diode Load current: 12A Max. off-state voltage: 650V Technology: CoolSiC™ 5G; SiC |
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| T720N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA Case: BG-T7526K-1 Mounting: Press-Pack Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 1.65kA Load current: 720A Gate current: 250mA Max. forward impulse current: 12.5kA |
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BFP520H6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 2.5V Collector current: 40mA Power dissipation: 0.1W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 45GHz |
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IRFS7734TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 290W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel Kind of channel: enhanced |
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IPB037N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced |
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BF2040E6814HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT Drain-source voltage: 8V Drain current: 40mA Type of transistor: N-MOSFET Open-loop gain: 23dB Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: dual gate Kind of transistor: RF Kind of channel: depleted Gate-source voltage: ±10V Case: SOT143 Frequency: 800MHz |
на замовлення 9980 шт: термін постачання 21-30 дні (днів) |
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1EDC05I12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1 Type of integrated circuit: driver Supply voltage: 3.1...17V; 13...35V Mounting: SMD Case: PG-DSO-8 Integrated circuit features: galvanically isolated Kind of package: reel; tape Number of channels: 1 Output current: -0.5...0.5A Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 600/650/1200V |
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| KIT_XC2365A_SK | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: automotive; XC2000 Associated circuits: XC2000 Type of development kit: automotive |
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IPL60R105P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 137W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 45nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| IDK20G120C5XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; PG-TO263-2; 330W Technology: CoolSiC™ 5G; SiC Power dissipation: 330W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward impulse current: 168A Load current: 20A Max. forward voltage: 2V Leakage current: 44µA |
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| 2EDL23I06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-14 Output current: -2.5...1.8A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V |
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IPP12CN10LGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 69A Power dissipation: 125W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRFSL3207ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA028N04NM3SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP Mounting: THT Drain-source voltage: 40V Drain current: 63A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 356A Case: TO220FP |
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IPA028N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 80V Drain current: 62A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 155nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
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1EDC10I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -1...1A Number of channels: 1 Supply voltage: 3.1...17V; 13...18V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 600/650/1200V |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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1EDC30I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -3...3A Topology: single transistor Voltage class: 600/650/1200V Supply voltage: 3.1...17V; 13...18V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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1EDC60I12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -6...6A Number of channels: 1 Supply voltage: 3.1...17V; 13...35V Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 600/650/1200V |
на замовлення 714 шт: термін постачання 21-30 дні (днів) |
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| IAUC70N08S5N074ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 47A Pulsed drain current: 280A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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IRLHS6376TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Power dissipation: 1.5W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 3900 шт: термін постачання 21-30 дні (днів) |
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| IKW25N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 38ns Turn-off time: 490ns Features of semiconductor devices: integrated anti-parallel diode |
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IKW08T120FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 8A Power dissipation: 70W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 63ns Turn-off time: 520ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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IRFP4368PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 350A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhanced |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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| TD122N22KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Max. off-state voltage: 2.2kV
Load current: 122A
Max. load current: 220A
Semiconductor structure: double series
Case: BG-PB34-1
Max. forward impulse current: 3.3kA
Max. forward voltage: 1.95V
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Max. off-state voltage: 2.2kV
Load current: 122A
Max. load current: 220A
Semiconductor structure: double series
Case: BG-PB34-1
Max. forward impulse current: 3.3kA
Max. forward voltage: 1.95V
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
товар відсутній
| BCR112E6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
товар відсутній
| IRFR4104PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhanced
товар відсутній
| IPN60R3K4CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.6A; Idm: 3.9A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.6A
Pulsed drain current: 3.9A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.6A; Idm: 3.9A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.6A
Pulsed drain current: 3.9A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPP60R060P7 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IGP40N65F5 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
товар відсутній
| IAUC24N10S5L300ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IDW24G65C5BXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12Ax2; 152W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A x2
Power dissipation: 152W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 56A
Max. forward voltage: 1.8V
Leakage current: 2.4µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12Ax2; 152W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A x2
Power dissipation: 152W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 56A
Max. forward voltage: 1.8V
Leakage current: 2.4µA
товар відсутній
| IDW32G65C5BXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16Ax2; 188W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A x2
Power dissipation: 188W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 74A
Max. forward voltage: 1.8V
Leakage current: 3.2µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16Ax2; 188W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A x2
Power dissipation: 188W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 74A
Max. forward voltage: 1.8V
Leakage current: 3.2µA
товар відсутній
| IDW40G65C5BXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 112W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 87A
Max. forward voltage: 1.8V
Leakage current: 4.1µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 112W; PG-TO247-3
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Kind of package: tube
Max. forward impulse current: 87A
Max. forward voltage: 1.8V
Leakage current: 4.1µA
товар відсутній
| 1EDI05I12AFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -0.5...0.5A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -0.5...0.5A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.85 грн |
| 13+ | 69.69 грн |
| 34+ | 66.06 грн |
| 1EDI10I12MFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 1
товар відсутній
| 1EDI40I12AFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -4...4A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
товар відсутній
| 1EDI60I12AFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
товар відсутній
| IAUA250N04S6N005AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUA250N04S6N006AUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUA250N04S6N007AUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUA250N04S6N007EAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1.3kA
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1.3kA
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUA250N04S6N008AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 1100A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 1100A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IPW80R360P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| BSF035NE2LQXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W
Technology: OptiMOS™
Case: CanPAK™ SQ; MG-WDSON-2
Mounting: SMD
On-state resistance: 3.5mΩ
Power dissipation: 28W
Drain-source voltage: 25V
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET
Drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W
Technology: OptiMOS™
Case: CanPAK™ SQ; MG-WDSON-2
Mounting: SMD
On-state resistance: 3.5mΩ
Power dissipation: 28W
Drain-source voltage: 25V
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET
Drain current: 69A
товар відсутній
| DZ950N44K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 4.4kV; If: 950A; BG-PB70-1; Ifsm: 35kA
Max. off-state voltage: 4.4kV
Max. forward voltage: 0.85V
Load current: 950A
Semiconductor structure: single diode
Max. forward impulse current: 35kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB70-1
Category: Diode modules
Description: Module: diode; single diode; 4.4kV; If: 950A; BG-PB70-1; Ifsm: 35kA
Max. off-state voltage: 4.4kV
Max. forward voltage: 0.85V
Load current: 950A
Semiconductor structure: single diode
Max. forward impulse current: 35kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB70-1
товар відсутній
| IPL65R130C7AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 102W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 102W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BTS3142DATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 28mΩ
Technology: HITFET®
Output voltage: 42V
Power dissipation: 59W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 28mΩ
Technology: HITFET®
Output voltage: 42V
Power dissipation: 59W
товар відсутній
| BSZ040N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 3654 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.89 грн |
| 8+ | 51.83 грн |
| 22+ | 39.56 грн |
| 25+ | 39.49 грн |
| 60+ | 37.39 грн |
| 100+ | 36.15 грн |
| 1000+ | 35.93 грн |
| BCR112 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
товар відсутній
| BAS7004WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
на замовлення 3025 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.85 грн |
| 70+ | 5.26 грн |
| 100+ | 4.73 грн |
| 230+ | 3.71 грн |
| 625+ | 3.51 грн |
| TLS115B0LDXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
товар відсутній
| TLS115D0LDXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
товар відсутній
| BCR430U |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V
товар відсутній
| IPL60R650P6SATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFR4620PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
товар відсутній
| IPDD60R190G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 76W
Type of transistor: N-MOSFET
On-state resistance: 0.19Ω
Drain current: 13A
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 36A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 76W
Type of transistor: N-MOSFET
On-state resistance: 0.19Ω
Drain current: 13A
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 36A
Mounting: SMD
товар відсутній
| TT430N22KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 430A; BG-PB60AT-1; screw
Mechanical mounting: screw
Load current: 430A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Case: BG-PB60AT-1
Type of module: thyristor
Max. forward impulse current: 14kA
Gate current: 250mA
Semiconductor structure: double series
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 430A; BG-PB60AT-1; screw
Mechanical mounting: screw
Load current: 430A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Case: BG-PB60AT-1
Type of module: thyristor
Max. forward impulse current: 14kA
Gate current: 250mA
Semiconductor structure: double series
товар відсутній
| IDK08G120C5XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; PG-TO263-2; 126W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 60A
Power dissipation: 126W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; PG-TO263-2; 126W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 60A
Power dissipation: 126W
товар відсутній
| IPI65R420CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
Technology: CoolMOS™
Case: PG-TO262-3
Mounting: THT
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
Technology: CoolMOS™
Case: PG-TO262-3
Mounting: THT
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
товар відсутній
| IPP65R420CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| AIDW12S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 76W
Application: automotive industry
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
Semiconductor structure: single diode
Load current: 12A
Max. off-state voltage: 650V
Technology: CoolSiC™ 5G; SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 76W
Application: automotive industry
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
Semiconductor structure: single diode
Load current: 12A
Max. off-state voltage: 650V
Technology: CoolSiC™ 5G; SiC
товар відсутній
| T720N16TOFXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 1.65kA
Load current: 720A
Gate current: 250mA
Max. forward impulse current: 12.5kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 1.65kA
Load current: 720A
Gate current: 250mA
Max. forward impulse current: 12.5kA
товар відсутній
| BFP520H6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
товар відсутній
| IRFS7734TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB037N06N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BF2040E6814HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Drain-source voltage: 8V
Drain current: 40mA
Type of transistor: N-MOSFET
Open-loop gain: 23dB
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: dual gate
Kind of transistor: RF
Kind of channel: depleted
Gate-source voltage: ±10V
Case: SOT143
Frequency: 800MHz
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Drain-source voltage: 8V
Drain current: 40mA
Type of transistor: N-MOSFET
Open-loop gain: 23dB
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: dual gate
Kind of transistor: RF
Kind of channel: depleted
Gate-source voltage: ±10V
Case: SOT143
Frequency: 800MHz
на замовлення 9980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.45 грн |
| 35+ | 11.76 грн |
| 100+ | 8.71 грн |
| 270+ | 8.2 грн |
| 3000+ | 7.91 грн |
| 1EDC05I12AHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -0.5...0.5A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -0.5...0.5A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
товар відсутній
| KIT_XC2365A_SK |
|
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: automotive; XC2000
Associated circuits: XC2000
Type of development kit: automotive
Category: Development kits - others
Description: Dev.kit: automotive; XC2000
Associated circuits: XC2000
Type of development kit: automotive
товар відсутній
| IPL60R105P7AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 137W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 137W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IDK20G120C5XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; PG-TO263-2; 330W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 330W
Case: PG-TO263-2
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward impulse current: 168A
Load current: 20A
Max. forward voltage: 2V
Leakage current: 44µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; PG-TO263-2; 330W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 330W
Case: PG-TO263-2
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. forward impulse current: 168A
Load current: 20A
Max. forward voltage: 2V
Leakage current: 44µA
товар відсутній
| 2EDL23I06PJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
товар відсутній
| IPP12CN10LGXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFSL3207ZPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPA028N04NM3SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 356A
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 356A
Case: TO220FP
товар відсутній
| IPA028N08N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 80V
Drain current: 62A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 155nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 80V
Drain current: 62A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 155nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| 1EDC10I12MHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...18V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...18V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600/650/1200V
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.99 грн |
| 5+ | 179.31 грн |
| 13+ | 169.15 грн |
| 1EDC30I12MHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -3...3A
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -3...3A
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
товар відсутній
| 1EDC60I12AHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600/650/1200V
на замовлення 714 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 192.32 грн |
| 5+ | 158.26 грн |
| 15+ | 149.55 грн |
| 20+ | 144.46 грн |
| IAUC70N08S5N074ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRLHS6376TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1.5W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1.5W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.89 грн |
| 25+ | 18.29 грн |
| 61+ | 13.94 грн |
| 167+ | 13.21 грн |
| IKW25N120CS7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Turn-off time: 490ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Turn-off time: 490ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKW08T120FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 520ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 520ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.78 грн |
| 3+ | 177.13 грн |
| 6+ | 153.9 грн |
| 16+ | 145.19 грн |
| IRFP4368PBFXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 530.84 грн |
| 3+ | 286.02 грн |
| 9+ | 270.05 грн |