Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136409) > Сторінка 2269 з 2274
| Фото | Назва | Виробник | Інформація |
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1EDC20I12MHXUMA1 | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Voltage class: 600/650/1200V Supply voltage: 3.1...17V; 13...18V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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ISP452 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3 Technology: Industrial PROFET Case: SOT223-3 On-state resistance: 0.16Ω Mounting: SMD Output current: 0.7A Kind of integrated circuit: high-side Number of channels: 1 Supply voltage: 5...34V DC Type of integrated circuit: power switch Kind of output: N-Channel |
на замовлення 1124 шт: термін постачання 21-30 дні (днів) |
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IPA90R800C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPI90R800C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhanced |
на замовлення 404 шт: термін постачання 21-30 дні (днів) |
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IPW90R800C3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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AUIR3242SXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Output current: 0.2A Number of channels: 1 Supply voltage: 3...36V DC Mounting: SMD Voltage class: 40V |
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TLD11141EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-TSDSO-14; 360mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED controller Technology: Litix™ Case: PG-TSDSO-14 Output current: 0.36A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V Protection: overheating OTP |
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TLD1313ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3 Type of integrated circuit: driver Kind of integrated circuit: high-side; LED controller Technology: Litix™ Case: PG-SSOP-14-EP Output current: 0.12A Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V Protection: overheating OTP |
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TLD21421EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: high-side; LED controller Technology: Litix™ Case: PG-SSOP-14-EP Output current: 240mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V Protection: overheating OTP |
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TLD2314ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3 Type of integrated circuit: driver Kind of integrated circuit: high-side; LED controller Technology: Litix™ Case: PG-SSOP-14-EP Output current: 0.12A Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V Protection: overheating OTP |
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BSP50H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Frequency: 200MHz |
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BFQ19SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 0.12A Power dissipation: 1W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 5.5GHz |
на замовлення 441 шт: термін постачання 21-30 дні (днів) |
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BFS483H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 65mA Power dissipation: 0.45W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
на замовлення 2755 шт: термін постачання 21-30 дні (днів) |
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IRFB61N15DPBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 60A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced |
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IRL3713PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 200A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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| FZ400R17KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES Type of module: IGBT Semiconductor structure: single transistor Case: AG-62MMES Electrical mounting: screw Power dissipation: 2.5kW Technology: TRENCHSTOP™ Mechanical mounting: screw Collector current: 400A Gate-emitter voltage: ±20V Pulsed collector current: 800A Max. off-state voltage: 1.7kV |
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| IMW65R027M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 185A Power dissipation: 189W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 35mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| IMZA65R027M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W Mounting: THT Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Pulsed drain current: 184A Gate-source voltage: -5...23V Case: TO247-4 Drain-source voltage: 650V Drain current: 41A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 189W Polarisation: unipolar Kind of package: tube |
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BTS133 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; HITFET® Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Technology: HITFET® |
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| TLT807B0EPVXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷20V; 70mA; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 1.2...20V Output current: 70mA Case: PG-TSDSO-14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 4.7...42V |
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IRFH4251DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 31W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Trade name: FastIRFET |
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BSP171PL6327 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.7A Power dissipation: 1.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhanced |
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TT180N12KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 180A; BG-PB34-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 180A Case: BG-PB34-1 Max. forward voltage: 1.41V Max. forward impulse current: 4.8kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IRFH3702TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 2.8W; PQFN3X3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Power dissipation: 2.8W Case: PQFN3X3 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH4210DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 255A Power dissipation: 3.5W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Trade name: FastIRFET |
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IRFH4234TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET Case: PQFN5X6 Mounting: SMD Kind of package: reel Technology: HEXFET® Power dissipation: 3.5W Polarisation: unipolar Drain current: 22A Drain-source voltage: 25V Kind of channel: enhanced Type of transistor: N-MOSFET Trade name: FastIRFET |
на замовлення 1724 шт: термін постачання 21-30 дні (днів) |
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IRFH5020TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.1A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5025TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 3.8A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5053TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.3A Power dissipation: 3.1W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5210TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5215TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 5A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| IRFH7545TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 54A Pulsed drain current: 340A Power dissipation: 83W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Kind of channel: enhanced |
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IRFH7921TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 3.1W Case: PQFN8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH8316TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IRFH8321TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 3.4W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| FF900R12IE4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Mechanical mounting: screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Power dissipation: 5.1kW Electrical mounting: screw Type of module: IGBT Case: AG-PRIME2-1 Technology: PrimePACK™ 2 Topology: IGBT half-bridge; NTC thermistor |
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BSZ42DN25NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 250V Drain current: 5A On-state resistance: 0.425Ω Type of transistor: N-MOSFET Power dissipation: 33.8W Polarisation: unipolar |
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BTS118D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 On-state resistance: 0.1Ω Technology: HITFET® Output voltage: 42V Power dissipation: 21W |
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IRFU2405PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: IPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 70nC Kind of channel: enhanced |
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IRFU3910PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: THT Gate charge: 29.3nC Kind of channel: enhanced |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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FS50R12KE3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: AG-ECONO2-6 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 270W Technology: EconoPACK™ 2 Mechanical mounting: screw |
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| TZ530N36KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 3.6kV; 530A; BG-PB70-1; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 3.6kV Load current: 530A Case: BG-PB70-1 Max. forward voltage: 2.65V Max. forward impulse current: 22kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IHW30N160R2 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.6kV; 30A; 312W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.6kV Collector current: 30A Power dissipation: 312W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 94nC Kind of package: tube Turn-off time: 675ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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BSC031N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 139W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET |
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BFR380FH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 80mA Power dissipation: 0.38W Case: TSFP-3 Mounting: SMD Kind of package: reel; tape Frequency: 14GHz |
на замовлення 5635 шт: термін постачання 21-30 дні (днів) |
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TD425N18KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 425A; BG-PB60AT-1; Ufmax: 1.5V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 425A Case: BG-PB60AT-1 Max. forward voltage: 1.5V Max. forward impulse current: 14.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Max. load current: 800A Mechanical mounting: screw |
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TD500N16KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 500A Max. load current: 900A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TD570N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 600A; BG-PB60AT-1; Ufmax: 1.27V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 600A Case: BG-PB60AT-1 Max. forward voltage: 1.27V Max. forward impulse current: 14kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Max. load current: 900A Mechanical mounting: screw |
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| TD600N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 600A; BG-PB60AT-1; Ufmax: 1.27V Max. off-state voltage: 1.6kV Max. forward voltage: 1.27V Load current: 600A Max. load current: 600A Semiconductor structure: double series Case: BG-PB60AT-1 Max. forward impulse current: 21kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Gate current: 250mA |
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TD190N16SOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 190A; BG-PB34SB-1; Ufmax: 1.52V Max. forward impulse current: 5.2kA Case: BG-PB34SB-1 Max. off-state voltage: 1.6kV Max. load current: 190A Max. forward voltage: 1.52V Load current: 190A Semiconductor structure: double series Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor |
товар відсутній |
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| TD190N18SOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 190A; BG-PB34SB-1; Ufmax: 1.52V Max. forward impulse current: 5.2kA Case: BG-PB34SB-1 Max. off-state voltage: 1.8kV Max. load current: 190A Max. forward voltage: 1.52V Load current: 190A Semiconductor structure: double series Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor |
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TT250N14KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 250A; BG-PB50-1; Ifsm: 7kA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 250A Case: BG-PB50-1 Max. forward voltage: 1.5V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TT250N16KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 250A; BG-PB50-1; Ifsm: 7kA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 250A Case: BG-PB50-1 Max. forward voltage: 1.5V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
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TT250N18KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 250A Case: BG-PB50-1 Max. forward voltage: 1.5V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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TT251N16KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 251A Case: BG-PB50-1 Max. forward voltage: 1.4V Max. forward impulse current: 9.1kA Gate current: 300mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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TT251N18KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 251A; BG-PB50-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 251A Case: BG-PB50-1 Max. forward voltage: 1.4V Max. forward impulse current: 9.1kA Gate current: 300mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
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| TT320N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 320A; BG-PB50SB-1; screw Case: BG-PB50SB-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.6kV Max. forward voltage: 1.47V Load current: 320A Semiconductor structure: double series Gate current: 150mA Max. forward impulse current: 9.5kA |
товар відсутній |
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TT320N18SOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw Case: BG-PB50SB-1 Semiconductor structure: double series Max. off-state voltage: 1.8kV Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. forward voltage: 1.47V Load current: 320A Max. forward impulse current: 9.5kA Type of module: thyristor |
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TT425N12KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 471A; BG-PB60AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 471A Case: BG-PB60AT-1 Max. forward voltage: 1.5V Max. forward impulse current: 14.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IPD60R170CFD7 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 76W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.325Ω Mounting: SMD Gate charge: 28nC Kind of channel: enhanced |
товар відсутній |
| 1EDC20I12MHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
товар відсутній
| ISP452 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Technology: Industrial PROFET
Case: SOT223-3
On-state resistance: 0.16Ω
Mounting: SMD
Output current: 0.7A
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 5...34V DC
Type of integrated circuit: power switch
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Technology: Industrial PROFET
Case: SOT223-3
On-state resistance: 0.16Ω
Mounting: SMD
Output current: 0.7A
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 5...34V DC
Type of integrated circuit: power switch
Kind of output: N-Channel
на замовлення 1124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.92 грн |
| 5+ | 131.4 грн |
| 7+ | 119.78 грн |
| 20+ | 113.25 грн |
| IPA90R800C3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPI90R800C3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 404 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.61 грн |
| IPW90R800C3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| AUIR3242SXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.2A
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Voltage class: 40V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.2A
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Voltage class: 40V
товар відсутній
| TLD11141EPXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-TSDSO-14; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: 0.36A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-TSDSO-14; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: 0.36A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
товар відсутній
| TLD1313ELXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
товар відсутній
| TLD21421EPXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 240mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 240mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
товар відсутній
| TLD2314ELXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 3
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
товар відсутній
| BSP50H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
товар відсутній
| BFQ19SH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
на замовлення 441 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 31.27 грн |
| 25+ | 26.06 грн |
| 40+ | 21.12 грн |
| 110+ | 19.96 грн |
| BFS483H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 2755 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.63 грн |
| 11+ | 34.12 грн |
| 25+ | 29.76 грн |
| 32+ | 26.86 грн |
| 87+ | 24.68 грн |
| IRFB61N15DPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRL3713PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| FZ400R17KE4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Case: AG-62MMES
Electrical mounting: screw
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Collector current: 400A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 1.7kV
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Case: AG-62MMES
Electrical mounting: screw
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Collector current: 400A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 1.7kV
товар відсутній
| IMW65R027M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IMZA65R027M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Pulsed drain current: 184A
Gate-source voltage: -5...23V
Case: TO247-4
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Pulsed drain current: 184A
Gate-source voltage: -5...23V
Case: TO247-4
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| BTS133 | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Technology: HITFET®
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Technology: HITFET®
товар відсутній
| TLT807B0EPVXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷20V; 70mA; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.2...20V
Output current: 70mA
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.7...42V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷20V; 70mA; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.2...20V
Output current: 70mA
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.7...42V
товар відсутній
| IRFH4251DTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
товар відсутній
| BSP171PL6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TT180N12KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 180A; BG-PB34-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 180A
Case: BG-PB34-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 180A; BG-PB34-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 180A
Case: BG-PB34-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IRFH3702TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 2.8W; PQFN3X3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 2.8W
Case: PQFN3X3
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 2.8W; PQFN3X3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 2.8W
Case: PQFN3X3
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH4210DTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Trade name: FastIRFET
товар відсутній
| IRFH4234TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Power dissipation: 3.5W
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 25V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Trade name: FastIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Power dissipation: 3.5W
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 25V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Trade name: FastIRFET
на замовлення 1724 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.42 грн |
| IRFH5020TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5025TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5053TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5210TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5215TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH7545TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Pulsed drain current: 340A
Power dissipation: 83W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Pulsed drain current: 340A
Power dissipation: 83W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFH7921TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH8316TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.45 грн |
| IRFH8321TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| FF900R12IE4 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 5.1kW
Electrical mounting: screw
Type of module: IGBT
Case: AG-PRIME2-1
Technology: PrimePACK™ 2
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 5.1kW
Electrical mounting: screw
Type of module: IGBT
Case: AG-PRIME2-1
Technology: PrimePACK™ 2
Topology: IGBT half-bridge; NTC thermistor
товар відсутній
| BSZ42DN25NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 250V
Drain current: 5A
On-state resistance: 0.425Ω
Type of transistor: N-MOSFET
Power dissipation: 33.8W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 250V
Drain current: 5A
On-state resistance: 0.425Ω
Type of transistor: N-MOSFET
Power dissipation: 33.8W
Polarisation: unipolar
товар відсутній
| BTS118D |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
товар відсутній
| IRFU2405PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 70nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 70nC
Kind of channel: enhanced
товар відсутній
| IRFU3910PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: THT
Gate charge: 29.3nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: THT
Gate charge: 29.3nC
Kind of channel: enhanced
на замовлення 193 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.74 грн |
| 9+ | 44.07 грн |
| 11+ | 35.14 грн |
| 27+ | 31.51 грн |
| 74+ | 29.84 грн |
| FS50R12KE3 | |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO2-6
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Technology: EconoPACK™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO2-6
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Technology: EconoPACK™ 2
Mechanical mounting: screw
товар відсутній
| TZ530N36KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 530A; BG-PB70-1; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 530A
Case: BG-PB70-1
Max. forward voltage: 2.65V
Max. forward impulse current: 22kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 530A; BG-PB70-1; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 530A
Case: BG-PB70-1
Max. forward voltage: 2.65V
Max. forward impulse current: 22kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IHW30N160R2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 30A; 312W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 30A
Power dissipation: 312W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Turn-off time: 675ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 30A; 312W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 30A
Power dissipation: 312W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Turn-off time: 675ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| BSC031N06NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 139W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 139W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| BFR380FH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
на замовлення 5635 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 18.92 грн |
| 34+ | 10.74 грн |
| 100+ | 9.44 грн |
| 103+ | 8.2 грн |
| 283+ | 7.77 грн |
| TD425N18KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 425A; BG-PB60AT-1; Ufmax: 1.5V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 425A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Max. load current: 800A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 425A; BG-PB60AT-1; Ufmax: 1.5V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 425A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Max. load current: 800A
Mechanical mounting: screw
товар відсутній
| TD500N16KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Max. load current: 900A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Max. load current: 900A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TD570N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 600A; BG-PB60AT-1; Ufmax: 1.27V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 14kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Max. load current: 900A
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 600A; BG-PB60AT-1; Ufmax: 1.27V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 14kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Max. load current: 900A
Mechanical mounting: screw
товар відсутній
| TD600N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 600A; BG-PB60AT-1; Ufmax: 1.27V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 600A
Max. load current: 600A
Semiconductor structure: double series
Case: BG-PB60AT-1
Max. forward impulse current: 21kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Gate current: 250mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 600A; BG-PB60AT-1; Ufmax: 1.27V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 600A
Max. load current: 600A
Semiconductor structure: double series
Case: BG-PB60AT-1
Max. forward impulse current: 21kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Gate current: 250mA
товар відсутній
| TD190N16SOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
товар відсутній
| TD190N18SOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.8kV
Max. load current: 190A
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.8kV
Max. load current: 190A
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
товар відсутній
| TT250N14KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TT250N16KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TT250N18KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14177.83 грн |
| TT251N16KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 251A
Case: BG-PB50-1
Max. forward voltage: 1.4V
Max. forward impulse current: 9.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 251A
Case: BG-PB50-1
Max. forward voltage: 1.4V
Max. forward impulse current: 9.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14247.41 грн |
| TT251N18KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 251A; BG-PB50-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 251A
Case: BG-PB50-1
Max. forward voltage: 1.4V
Max. forward impulse current: 9.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 251A; BG-PB50-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 251A
Case: BG-PB50-1
Max. forward voltage: 1.4V
Max. forward impulse current: 9.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TT320N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
товар відсутній
| TT320N18SOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. forward voltage: 1.47V
Load current: 320A
Max. forward impulse current: 9.5kA
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Case: BG-PB50SB-1
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. forward voltage: 1.47V
Load current: 320A
Max. forward impulse current: 9.5kA
Type of module: thyristor
товар відсутній
| TT425N12KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 471A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 471A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 471A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 471A
Case: BG-PB60AT-1
Max. forward voltage: 1.5V
Max. forward impulse current: 14.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IPD60R170CFD7 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
товар відсутній