Інші пропозиції IPB90R340C3ATMA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IPB90R340C3ATMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 900V 15A 3-Pin(2+Tab) D2PAK T/R |
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IPB90R340C3ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB90R340C3ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 900V 15A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
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IPB90R340C3ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 900V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
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IPB90R340C3ATMA1 | Виробник : Infineon Technologies |
MOSFETs N-Ch 900V 15A D2PAK-2 |
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IPB90R340C3ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Kind of channel: enhanced |
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