Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136409) > Сторінка 2268 з 2274
| Фото | Назва | Виробник | Інформація |
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IDP18E120XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 18A; tube; TO220-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 18A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220-2 Kind of package: tube |
на замовлення 765 шт: термін постачання 21-30 дні (днів) |
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IDP30E120XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Case: TO220-2 |
на замовлення 129 шт: термін постачання 21-30 дні (днів) |
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IDP30E60XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; TO220-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220-2 Kind of package: tube |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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IDW75E60FKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 75A; tube; TO247-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 75A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-3 Kind of package: tube |
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TLS202B1MBV50HTSA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD Type of integrated circuit: voltage regulator Input voltage: 2.7...18V Output voltage: 5V Output current: 0.15A Case: PG-SCT595 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Tolerance: ±3% Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V |
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IPI029N06NAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: THT Kind of channel: enhanced |
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IPI076N12N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 100A Power dissipation: 168W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Kind of channel: enhanced |
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BSZ130N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Power dissipation: 25W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of channel: enhanced |
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IRF7862TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IAUT300N08S5N014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8 Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOF-8 On-state resistance: 1.4mΩ Power dissipation: 300W Gate charge: 60nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 300A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET |
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FP15R12W1T4_B3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A Case: AG-EASY1B-1 Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Pulsed collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 130W |
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IRFU5505PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: IPAK Mounting: THT Kind of channel: enhanced |
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IRFU7440PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 140W Case: IPAK Mounting: THT Kind of channel: enhanced |
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IPB50R250CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 114W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced |
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IPB50R299CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 104W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of channel: enhanced |
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IPB65R125C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 101W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced |
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IPB65R225C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.225Ω Power dissipation: 63W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 11A |
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IPI50R140CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 192W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of channel: enhanced |
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IPI50R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Power dissipation: 139W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of channel: enhanced |
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IPP60R125C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R125CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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IPP60R125P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB407N30NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO263-3 Mounting: SMD Drain-source voltage: 300V Drain current: 44A On-state resistance: 40.7mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 |
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BSS84PH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.14A Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 0.37nC Kind of package: reel Kind of channel: enhanced |
на замовлення 2298 шт: термін постачання 21-30 дні (днів) |
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TLD23313EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; 60mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED controller Technology: Litix™ Case: PG-SSOP-14-EP Output current: 60mA Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V Protection: overheating OTP |
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IPA95R1K2P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPP60R1K4C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.2A; 28.4W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.2A Power dissipation: 28.4W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IAUT300N08S5N012ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: reel; tape Kind of channel: enhanced |
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IPB65R099C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhanced |
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IPI65R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhanced |
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IPL65R099C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Power dissipation: 128W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhanced |
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IPP65R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPS65R400CEAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.5A Power dissipation: 118W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 39nC Kind of channel: enhanced |
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IPD80R280P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.6A Power dissipation: 101W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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BTF50060-1TEA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 16.5A; Ch: 1; P-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 16.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TO252-5 On-state resistance: 6.8mΩ Supply voltage: 6...19V DC Technology: HITFET® |
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AUIRGPS4070D0 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 160A; 375W; SUPER247 Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 160A Power dissipation: 375W Case: SUPER247 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 165ns Turn-off time: 260ns |
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PVI5033RS-TPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 2.5ms Turn-off time: 0.5ms Manufacturer series: PVI5033RPbF |
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XMC4104F64K64ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 64kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...125°C Number of inputs/outputs: 35 Family: XMC4100 Number of A/D channels: 9 Kind of architecture: Cortex M4 |
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XMC4104F64K128ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 128kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...125°C Number of inputs/outputs: 35 Family: XMC4100 Number of A/D channels: 9 Kind of architecture: Cortex M4 |
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XMC4104Q48F64ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 64kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-VQFN-48 Operating temperature: -40...85°C Number of inputs/outputs: 21 Family: XMC4100 Number of A/D channels: 8 Kind of architecture: Cortex M4 |
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XMC4104Q48K64ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART Memory: 20kB SRAM; 64kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-VQFN-48 Operating temperature: -40...125°C Number of inputs/outputs: 21 Family: XMC4100 Number of A/D channels: 8 Kind of architecture: Cortex M4 |
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XMC4400F64F256ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...85°C Number of inputs/outputs: 31 Family: XMC4400 Number of A/D channels: 9 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4400F64F512ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 512kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...85°C Number of inputs/outputs: 31 Family: XMC4400 Number of A/D channels: 9 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4400F64K256ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...125°C Number of inputs/outputs: 31 Family: XMC4400 Number of A/D channels: 9 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4400F64K512ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 512kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...125°C Number of inputs/outputs: 31 Family: XMC4400 Number of A/D channels: 9 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4402F64F256ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...85°C Number of inputs/outputs: 31 Family: XMC4400 Number of A/D channels: 9 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4402F64K256ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...125°C Number of inputs/outputs: 31 Family: XMC4400 Number of A/D channels: 9 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4200Q48F256ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 40kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-VQFN-48 Operating temperature: -40...85°C Number of inputs/outputs: 21 Family: XMC4200 Number of A/D channels: 8 Kind of architecture: Cortex M4 |
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XMC4200Q48K256ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 40kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-VQFN-48 Operating temperature: -40...125°C Number of inputs/outputs: 21 Family: XMC4200 Number of A/D channels: 8 Kind of architecture: Cortex M4 |
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XMC4400F100F256ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-100 Operating temperature: -40...85°C Number of inputs/outputs: 55 Family: XMC4400 Number of A/D channels: 18 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4400F100F512ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 512kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-100 Operating temperature: -40...85°C Number of inputs/outputs: 55 Family: XMC4400 Number of A/D channels: 18 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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XMC4402F100F256ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 80kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-100 Operating temperature: -40...85°C Number of inputs/outputs: 55 Family: XMC4400 Number of A/D channels: 18 Number of 16bit timers: 26 Kind of architecture: Cortex M4 |
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DD104N12KHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 104A; BG-PB20-1; screw Case: BG-PB20-1 Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 104A Semiconductor structure: double series Max. forward impulse current: 2.5kA |
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XMC1302T038X0200ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,200kBFLASH Case: PG-TSSOP-38 Operating temperature: -40...105°C Interface: GPIO; USIC x2 Number of inputs/outputs: 34 Number of 16bit timers: 8 Integrated circuit features: ACMP x3; BCCU; CCU8; DSP; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 Memory: 16kB SRAM; 200kB FLASH Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller |
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IPB65R380C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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BAT6404WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: double series Case: SOT323 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
на замовлення 1195 шт: термін постачання 21-30 дні (днів) |
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BAT6406WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: common anode; double Case: SOT323 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
на замовлення 10239 шт: термін постачання 21-30 дні (днів) |
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BSZ028N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8 Mounting: SMD Polarisation: unipolar Power dissipation: 50W Type of transistor: N-MOSFET On-state resistance: 2.8mΩ Drain current: 20A Technology: OptiMOS™ 3 Kind of channel: enhanced Drain-source voltage: 40V Gate-source voltage: ±20V Case: PG-TSDSON-8 |
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1EDC20H12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Supply voltage: 3.1...17V; 13...35V Mounting: SMD Case: PG-DSO-8 Integrated circuit features: galvanically isolated Kind of package: reel; tape Number of channels: 1 Output current: -2...2A Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 600/650/1200V |
товар відсутній |
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1EDC20I12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Supply voltage: 3.1...17V; 13...35V Mounting: SMD Case: PG-DSO-8 Integrated circuit features: galvanically isolated Kind of package: reel; tape Number of channels: 1 Output current: -2...2A Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 600/650/1200V |
товар відсутній |
| IDP18E120XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220-2
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220-2
Kind of package: tube
на замовлення 765 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.23 грн |
| 9+ | 99.46 грн |
| 24+ | 94.37 грн |
| IDP30E120XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
на замовлення 129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.08 грн |
| 7+ | 128.49 грн |
| 18+ | 121.96 грн |
| IDP30E60XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220-2
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220-2
Kind of package: tube
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.16 грн |
| 5+ | 111.8 грн |
| 12+ | 74.05 грн |
| 32+ | 69.69 грн |
| IDW75E60FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-3
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 75A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-3
Kind of package: tube
товар відсутній
| TLS202B1MBV50HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Input voltage: 2.7...18V
Output voltage: 5V
Output current: 0.15A
Case: PG-SCT595
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Tolerance: ±3%
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Input voltage: 2.7...18V
Output voltage: 5V
Output current: 0.15A
Case: PG-SCT595
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Tolerance: ±3%
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
товар відсутній
| IPI029N06NAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPI076N12N3GAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Power dissipation: 168W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Power dissipation: 168W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| BSZ130N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF7862TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IAUT300N08S5N014ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 300A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 300A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
товар відсутній
| FP15R12W1T4_B3 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 130W
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 130W
товар відсутній
| IRFU5505PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IRFU7440PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPB50R250CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB50R299CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB65R125C7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB65R225C7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.225Ω
Power dissipation: 63W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 11A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.225Ω
Power dissipation: 63W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 11A
товар відсутній
| IPI50R140CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPI50R199CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 139W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 139W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP60R125C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R125CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 612.93 грн |
| 3+ | 394.92 грн |
| 6+ | 373.14 грн |
| IPP60R125P6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPB407N30NATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO263-3
Mounting: SMD
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 40.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO263-3
Mounting: SMD
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 40.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
товар відсутній
| BSS84PH6327XTSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 2298 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 23.45 грн |
| 24+ | 15.54 грн |
| 50+ | 8.73 грн |
| 100+ | 7.38 грн |
| 250+ | 5.96 грн |
| 350+ | 2.44 грн |
| 961+ | 2.31 грн |
| TLD23313EPXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; 60mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 60mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; 60mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED controller
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 60mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V
Protection: overheating OTP
товар відсутній
| IPA95R1K2P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPP60R1K4C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.2A; 28.4W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.2A
Power dissipation: 28.4W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.2A; 28.4W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.2A
Power dissipation: 28.4W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IAUT300N08S5N012ATMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IPB65R099C6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPI65R099C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPL65R099C7AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPP65R099C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPS65R400CEAKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
товар відсутній
| IPD80R280P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| BTF50060-1TEA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 16.5A; Ch: 1; P-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 16.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 6.8mΩ
Supply voltage: 6...19V DC
Technology: HITFET®
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 16.5A; Ch: 1; P-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 16.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 6.8mΩ
Supply voltage: 6...19V DC
Technology: HITFET®
товар відсутній
| AUIRGPS4070D0 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 160A; 375W; SUPER247
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 160A
Power dissipation: 375W
Case: SUPER247
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 165ns
Turn-off time: 260ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 160A; 375W; SUPER247
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 160A
Power dissipation: 375W
Case: SUPER247
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 165ns
Turn-off time: 260ns
товар відсутній
| PVI5033RS-TPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
товар відсутній
| XMC4104F64K64ABXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
товар відсутній
| XMC4104F64K128ABXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 128kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 128kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
товар відсутній
| XMC4104Q48F64ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...85°C
Number of inputs/outputs: 21
Family: XMC4100
Number of A/D channels: 8
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...85°C
Number of inputs/outputs: 21
Family: XMC4100
Number of A/D channels: 8
Kind of architecture: Cortex M4
товар відсутній
| XMC4104Q48K64ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Family: XMC4100
Number of A/D channels: 8
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Family: XMC4100
Number of A/D channels: 8
Kind of architecture: Cortex M4
товар відсутній
| XMC4400F64F256ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4400F64F512ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 512kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 512kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4400F64K256ABXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4400F64K512ABXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 512kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 512kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4402F64F256ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4402F64K256ABXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 31
Family: XMC4400
Number of A/D channels: 9
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4200Q48F256ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 40kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...85°C
Number of inputs/outputs: 21
Family: XMC4200
Number of A/D channels: 8
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 40kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...85°C
Number of inputs/outputs: 21
Family: XMC4200
Number of A/D channels: 8
Kind of architecture: Cortex M4
товар відсутній
| XMC4200Q48K256ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 40kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Family: XMC4200
Number of A/D channels: 8
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 40kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Family: XMC4200
Number of A/D channels: 8
Kind of architecture: Cortex M4
товар відсутній
| XMC4400F100F256ABXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4400
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4400
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4400F100F512ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 512kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4400
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 512kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4400
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| XMC4402F100F256ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4400
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 80kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 80kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4400
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
| DD104N12KHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 104A; BG-PB20-1; screw
Case: BG-PB20-1
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 104A
Semiconductor structure: double series
Max. forward impulse current: 2.5kA
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 104A; BG-PB20-1; screw
Case: BG-PB20-1
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 104A
Semiconductor structure: double series
Max. forward impulse current: 2.5kA
товар відсутній
| XMC1302T038X0200ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,200kBFLASH
Case: PG-TSSOP-38
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; CCU8; DSP; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 200kB FLASH
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,200kBFLASH
Case: PG-TSSOP-38
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; CCU8; DSP; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 200kB FLASH
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
товар відсутній
| IPB65R380C6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BAT6404WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Case: SOT323
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Case: SOT323
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 1195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.71 грн |
| 20+ | 18.95 грн |
| 25+ | 14.74 грн |
| 100+ | 10.09 грн |
| 151+ | 5.66 грн |
| 415+ | 5.35 грн |
| BAT6406WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Case: SOT323
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Case: SOT323
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 10239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.89 грн |
| 28+ | 13.36 грн |
| 50+ | 8.78 грн |
| 100+ | 7.4 грн |
| 176+ | 4.86 грн |
| 484+ | 4.59 грн |
| 3000+ | 4.43 грн |
| BSZ028N04LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 50W
Type of transistor: N-MOSFET
On-state resistance: 2.8mΩ
Drain current: 20A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Drain-source voltage: 40V
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 50W
Type of transistor: N-MOSFET
On-state resistance: 2.8mΩ
Drain current: 20A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Drain-source voltage: 40V
Gate-source voltage: ±20V
Case: PG-TSDSON-8
товар відсутній
| 1EDC20H12AHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -2...2A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -2...2A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
товар відсутній
| 1EDC20I12AHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -2...2A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -2...2A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
товар відсутній