IAUZ20N08S5L300ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 25.54 грн |
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Технічний опис IAUZ20N08S5L300ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 20A 8TSDSON-32, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 8µA, Supplier Device Package: PG-TSDSON-8-32, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції IAUZ20N08S5L300ATMA1 за ціною від 23.28 грн до 69.6 грн
| Фото | Назва | Виробник | Інформація |
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IAUZ20N08S5L300ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 20A 8TSDSON-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 8µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 5081 шт: термін постачання 21-31 дні (днів) |
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IAUZ20N08S5L300ATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
на замовлення 4975 шт: термін постачання 183-192 дні (днів) |
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IAUZ20N08S5L300ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 80V 20A Automotive 8-Pin TSDSON EP T/R |
товар відсутній |
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| IAUZ20N08S5L300ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Features of semiconductor devices: logic level Kind of package: reel; tape Technology: OptiMOS™ 5 On-state resistance: 30mΩ Pulsed drain current: 80A Power dissipation: 30W Polarisation: unipolar Drain current: 14A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V кількість в упаковці: 5000 шт |
товар відсутній |
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| IAUZ20N08S5L300ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Features of semiconductor devices: logic level Kind of package: reel; tape Technology: OptiMOS™ 5 On-state resistance: 30mΩ Pulsed drain current: 80A Power dissipation: 30W Polarisation: unipolar Drain current: 14A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товар відсутній |